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公开(公告)号:US20180375098A1
公开(公告)日:2018-12-27
申请号:US15629893
申请日:2017-06-22
Inventor: Esin Akca , Cagla Akgun , Gokhan Demirci , Damon B. Farmer , Shu-Jen Han , Hareem T. Maune , Dahyun Oh
IPC: H01M4/583 , C07C43/11 , C08F220/06 , C07F1/02
Abstract: Batteries and methods of forming the same include a lithium anode, an electrolyte having a high solubility for lithium ions and oxygen, and a thin graphene cathode formed on a substrate. Lithium ions migrate from the lithium anode through the electrolyte to form Li2O2 at a surface of the thin graphene cathode.
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152.
公开(公告)号:US20180342689A1
公开(公告)日:2018-11-29
申请号:US15813526
申请日:2017-11-15
Applicant: International Business Machines Corporation
Inventor: Damon B. Farmer , Shu-Jen Han , Jianshi Tang , John J. Yurkas
Abstract: Embodiments of the invention are directed to methods and resulting structures for enhancing drive current and increasing device yield in n-type carbon nanotube field effect transistors (CNT FETs) with scaled contacts using a wetting layer. In some embodiments of the invention, a nanotube is formed over a surface of a substrate. An insulating layer is formed over the nanotube such that end portions of the nanotube are exposed. A low work function metal is formed over the end portions of the nanotube and a wetting layer is formed between the low work function metal and the nanotube.
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公开(公告)号:US20180276682A1
公开(公告)日:2018-09-27
申请号:US15465297
申请日:2017-03-21
Applicant: International Business Machines Corporation
Inventor: Ali Afzali-Ardakani , Shu-Jen Han
CPC classification number: G06Q30/0185
Abstract: A unique ID using optically visible carbon nanotubes with nanocrystal decoration is provided. In one aspect, a method for creating a unique ID includes: providing a substrate having an array of trenches; randomly placing carbon nanotubes throughout the array such that each trench either contains a carbon nanotube or does not, wherein the random placement of the carbon nanotubes throughout the array of trenches includes code information that forms the unique ID; and coating the carbon nanotubes with optically visible nanocrystals. A unique ID and authentication method using the unique ID are also provided.
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公开(公告)号:US10043976B2
公开(公告)日:2018-08-07
申请号:US15488746
申请日:2017-04-17
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor: Shu-Jen Han , Bharat Kumar , George S. Tulevski
IPC: H01L51/00 , C07C259/06 , C07F9/38 , H01L21/02 , C01B31/02
Abstract: Structures and methods that include selective electrostatic placement based on a dipole-to-dipole interaction of electron-rich carbon nanotubes onto an electron-deficient pre-patterned surface. The structure includes a substrate with a first surface having a first isoelectric point and at least one additional surface having a second isoelectric point. A self-assembled monolayer is selectively formed on the first surface and includes an electron deficient compound including a deprotonated pendant hydroxamic acid or a pendant phosphonic acid group or a pendant catechol group bound to the first surface. An organic solvent can be used to deposit the electron rich carbon nanotubes on the self-assembled monolayer.
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公开(公告)号:US10001516B2
公开(公告)日:2018-06-19
申请号:US15014350
申请日:2016-02-03
Applicant: International Business Machines Corporation
Inventor: Chia-Yu Chen , Shu-Jen Han
IPC: G01R27/08 , G01R27/02 , G01N27/414 , G01N27/02 , G01N33/00
CPC classification number: G01R27/02 , G01N27/02 , G01N27/4148 , G01N33/0031
Abstract: Frequency division multiplexing-based techniques for FET-based sensor arrays are provided. In one aspect, a sensor device includes: an array of FET-based sensors, wherein the sensors are grouped into multiple channels, and wherein each of the sensors includes an insulator on a substrate, a local gate embedded in the insulator, a channel material over the local embedded gate, and source and drain electrodes in contact with opposite ends of the channel material, and wherein a surface of the channel material is functionalized to react with at least one target molecule. The sensors in a given channel can be modulated (via the local gate) to enable the signal read out from the channel to be divided in the frequency domain based on the different frequencies used to modulate the sensors.
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公开(公告)号:US09994968B2
公开(公告)日:2018-06-12
申请号:US14666887
申请日:2015-03-24
Applicant: International Business Machines Corporation
Inventor: Lian Guo , Shu-Jen Han , Xuesong Li
CPC classification number: C25F3/02 , B32B38/10 , B32B2037/246 , B32B2307/202 , B32B2311/02 , B32B2457/14 , C01B32/186 , C25F5/00 , C25F7/00
Abstract: An electroplating etching apparatus includes a power to output current, and a container configured to contain an electrolyte. A cathode is coupled to the container and configured to fluidly communicate with the electrolyte. An anode is electrically connected to the output, and includes a graphene layer. A metal substrate layer is formed on the graphene layer, and is etched from the graphene layer in response to the current flowing through the anode.
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157.
公开(公告)号:US09923160B2
公开(公告)日:2018-03-20
申请号:US15090762
申请日:2016-04-05
Applicant: International Business Machines Corporation
Inventor: Qing Cao , Kangguo Cheng , Shu-Jen Han , Zhengwen Li , Fei Liu
CPC classification number: H01L51/0545 , H01L27/283 , H01L51/0006 , H01L51/0017 , H01L51/0021 , H01L51/0048 , H01L51/055 , H01L51/0558 , H01L51/105
Abstract: A method of arranging at least one carbon nanotube on a semiconductor substrate includes depositing the at least one carbon nanotube on a dielectric layer of the semiconductor device. The method further includes arranging the at least one carbon nanotube on the dielectric layer in response to applying a voltage potential to an electrically conductive electrode of the semiconductor device, and applying a ground potential to an electrically conductive semiconductor layer of the semiconductor device.
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公开(公告)号:US09923086B2
公开(公告)日:2018-03-20
申请号:US15016716
申请日:2016-02-05
Applicant: International Business Machines Corporation
Inventor: Qing Cao , Shu-Jen Han
CPC classification number: H01L29/775 , H01L29/0669 , H01L29/125 , H01L51/0023 , H01L51/0048 , H01L51/0541 , H01L51/0545 , H01L51/055 , H01L51/105
Abstract: A method, and the resulting structure, of making a CMOS device from carbon nanotube substrate, where a carbide contact is formed in a source drain region. The carbide is formed prior to the gate structure by reacting a glassy carbon and a metal.
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公开(公告)号:US09881966B2
公开(公告)日:2018-01-30
申请号:US14802014
申请日:2015-07-17
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor: Qing Cao , Shu-Jen Han
IPC: H01L27/146 , H01L31/0296 , H01L31/032
CPC classification number: H01L27/14652 , H01L27/14636 , H01L27/14647 , H01L27/14696 , H01L31/0296 , H01L31/032
Abstract: A three-dimensional multispectral imaging sensor and method for forming a three-dimensional multispectral imaging sensor are provided. The three-dimensional multispectral imaging sensor includes a monolithic structure having a plurality of layers. Each of the layers is formed from light detecting materials for detecting light of respective different non-overlapping wavelengths and having respective different bandgaps.
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公开(公告)号:US20180019282A1
公开(公告)日:2018-01-18
申请号:US15210463
申请日:2016-07-14
Applicant: International Business Machines Corporation
Inventor: Damon B. Farmer , Shu-Jen Han , Jianshi Tang
Abstract: A method for manufacturing a semiconductor device includes forming a dielectric layer on a substrate, forming a first carbon nanotube (CNT) layer on the dielectric layer at a first portion of the device corresponding to a first doping type, forming a second CNT layer on the dielectric layer at a second portion of the device corresponding to a second doping type, forming a plurality of first contacts on the first CNT layer, and a plurality of second contacts on the second CNT layer, performing a thermal annealing process to create end-bonds between the plurality of the first and second contacts and the first and second CNT layers, respectively, depositing a passivation layer on the plurality of the first and second contacts, and selectively removing a portion of the passivation layer from the plurality of first contacts.
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