中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

475 records (took 0.045 seconds)

    High power thin disk lasers
    151.
    发明申请
    High power thin disk lasers 审中-公开
    大功率薄盘激光器

    公开(公告)号：US20060209918A1

    公开(公告)日：2006-09-21

    申请号：US11376792

    申请日：2006-03-15

    Applicant: Zhijiang Wang ,  Ying Wang

    Inventor： Zhijiang Wang ,  Ying Wang

    IPC: H01S3/091 ,  H01S3/04 ,  H01S3/07 ,  H01S3/08

    CPC classification number: H01S3/0604 ,  H01S3/0405 ,  H01S3/042 ,  H01S3/08059 ,  H01S3/094084 ,  H01S3/09415 ,  H01S3/2325

    Abstract: A device including an active mirror made of thin disk active medium having a pump surface and a mirror surface, means for cooling that contacts with the mirror surface of the active medium dissipating heat from said laser medium, pump beam illuminating the pump surface of said active mirror and a multi-reflection optical system wherein the pump beam is imaged numerous times with the beam structure substantially unchanged during imaging leading to sufficient absorption of the pump beam by said thin disk active medium.

    Abstract translation: 一种包括由具有泵表面和反射镜表面的薄盘活性介质制成的主动反射镜的装置，用于与激活介质散热的活动介质的镜面接触的冷却装置，照射所述激活介质的泵表面的泵浦光束 镜子和多反射光学系统，其中泵浦光束成像多次，在成像期间梁结构基本上不变，导致泵浦光束被所述薄盘活动介质的足够吸收。

    Electronic devices having a charge transport layer that has defined triplet energy level
    156.
    发明申请
    Electronic devices having a charge transport layer that has defined triplet energy level 审中-公开
    具有电荷传输层的电子器件具有确定的三线态能级

    公开(公告)号：US20060042685A1

    公开(公告)日：2006-03-02

    申请号：US10925764

    申请日：2004-08-25

    Applicant: Ying Wang

    Inventor： Ying Wang

    IPC: H01L31/00

    CPC classification number: H01L51/5036 ,  H01L51/005 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/0071 ,  H01L51/0085 ,  H01L51/5048 ,  H01L2251/552

    Abstract: Electronic devices including a layer that contains a photoactive material, wherein an excited state of the photoactive material has an excitation energy Eex and wherein the photoactive material is either: (1) not a guest in a composition including a host, or (2) is a guest in a composition including a guest and a host, with the proviso that an electronic transport material is not included in the composition having the the guest and the host; and a charge transport layer located between the electrode and the photoactive layer, wherein the charge transport material has a triplet energy level that is higher than Eex. Alternatively, the layer includes a composition having the photoactive material as a guest, a host, and an electron charge transport material, and the device has two charge transport layers wherein both charge transport layers include a material having a triplet energy level that is higher than Eex.

    Abstract translation: 包括含有光活性材料的层的电子器件，其中所述光活性材料的激发态具有激发能E ex，并且其中所述光活性材料是：（1）不是包含 主持人或（2）是包括客人和主持人的作品的客人，条件是电子运输材料不包括在具有客人和主人的组合物中; 以及位于电极和光活性层之间的电荷传输层，其中电荷传输材料具有高于E 3的三重态能级。 或者，该层包括具有作为客体的光活性材料，主体和电子电荷传输材料的组合物，并且该装置具有两个电荷传输层，其中两个电荷传输层包括具有高于 例如。

    Void characterization in metal interconnect structures using X-ray emission analyses
    159.
    发明授权
    Void characterization in metal interconnect structures using X-ray emission analyses 有权
    使用X射线发射分析的金属互连结构中的空隙表征

    公开(公告)号：US06924484B1

    公开(公告)日：2005-08-02

    申请号：US10691940

    申请日：2003-10-22

    Applicant: Ying Wang ,  Anne Testoni

    Inventor： Ying Wang ,  Anne Testoni

    IPC: G01N23/225 ,  G01Q30/02 ,  H01J37/256 ,  G01N23/223 ,  H01J37/153

    CPC classification number: H01J37/256 ,  G01N23/225 ,  H01J2237/2445 ,  H01J2237/2561 ,  H01J2237/2807

    Abstract: Disclosed are methods and apparatus for characterizing a potential void or voids by analyzing the X-ray count of one or more emitted X-ray species as emitted from an interconnect structure under test in response to a impinging beam, such as an electron beam, directed towards the sample surface. For example, this analysis may be used to determine whether the structure (e.g., a contact, line or via) has one or more void(s). It may also he used to help determine where the void(s) are with respect to the interconnect structure. It may also be used to help determine other characteristics of the void(s) with respect to the interconnect structure such as the shape(s) and size(s) of the void(s). The analysis may also be used to help initially determine whether the structure under test is so out of specification that it cannot then be determined whether the structure has a defect of a particular type. This analysis can be used to evaluate the process variation of wafers.

    Abstract translation: 公开了通过分析从被测互连结构发射的一个或多个发射的X射线物质的X射线计数来响应于诸如电子束的入射光束来指示潜在空隙或空隙的方法和装置，例如电子束 朝向样品表面。 例如，该分析可用于确定结构（例如，接触，线或通孔）是否具有一个或多个空隙。 他也可以帮助确定空隙相对于互连结构的位置。 它还可以用于帮助确定相对于互连结构的空隙的其它特征，例如空隙的形状和尺寸。 该分析还可以用于帮助最初确定被测结构是否超出规范，以致不能确定该结构是否具有特定类型的缺陷。 该分析可用于评估晶圆的工艺变化。

Patent Agency Ranking