PROCESSING SYSTEM, RELATED INTEGRATED CIRCUIT, DEVICE AND METHOD

    公开(公告)号:US20230409341A1

    公开(公告)日:2023-12-21

    申请号:US18312237

    申请日:2023-05-04

    CPC classification number: G06F9/4405 G06F21/64

    Abstract: In embodiments, a reset management circuit executes reset, configuration, and software runtime phases when a processing system is switched on, where one or more microprocessors start at respective start addresses. During the configuration phase, a circuit reads a boot record from a non-volatile memory and stores it to registers. The circuit sequentially reads data records of configuration data from the non-volatile memory and generates a write request for each data record to store the data of the respective data record to a second circuit with associated address data indicated in the respective data record. The processing system processes the boot record and boot configuration data provided by the second circuits to selectively start a predetermined microprocessor at a default start address or at a start address indicated by the boot configuration data, or start one or more microprocessors at respective start addresses as indicated by the boot record.

    THREE-PHASE POWER FACTOR CONTROLLER IMPLEMENTED WITH SINGLE-PHASE POWER FACTOR CORRECTION CONTROLLER

    公开(公告)号:US20230396155A1

    公开(公告)日:2023-12-07

    申请号:US17834174

    申请日:2022-06-07

    CPC classification number: H02M1/4216 H02M1/4225 H02M1/4233 H02M1/12

    Abstract: A PFC correction circuit includes first, second, and third phase inputs coupled to three-phase power mains, with a three-phase full-wave rectifying bridge connected to an input node. First, second, and third boost inductors are respectively connected between first, second, and third phase inputs and first, second, and third taps of the three-phase full-wave rectifying bridge. A boost switch is connected between the input node and ground, and a boost diode is connected between the input node and an output node. A multiplier input driver generates a single-phase input signal as a replica of a signal at the three-phase power mains after rectification. A single-phase power factor controller generates a PWM signal from the single-phase input signal. A gate driver generates a gate drive signal from the PWM signal. The boost switch is operated by the gate drive signal.

    Elements for in-memory compute
    154.
    发明授权

    公开(公告)号:US11829730B2

    公开(公告)日:2023-11-28

    申请号:US17940654

    申请日:2022-09-08

    CPC classification number: G06F7/57 G06F3/0604 G06F3/0659 G06F3/0673 G06N3/063

    Abstract: A memory array arranged in multiple columns and rows. Computation circuits that each calculate a computation value from cell values in a corresponding column. A column multiplexer cycles through multiple data lines that each corresponds to a computation circuit. Cluster cycle management circuitry determines a number of multiplexer cycles based on a number of columns storing data of a compute cluster. A sensing circuit obtains the computation values from the computation circuits via the column multiplexer as the column multiplexer cycles through the data lines. The sensing circuit combines the obtained computation values over the determined number of multiplexer cycles. A first clock may initiate the multiplexer to cycle through its data lines for the determined number of multiplexer cycles, and a second clock may initiate each individual cycle. The multiplexer or additional circuitry may be utilized to modify the order in which data is written to the columns.

    PROCESSING SYSTEM, RELATED INTEGRATED CIRCUIT, DEVICE AND METHOD

    公开(公告)号:US20230314506A1

    公开(公告)日:2023-10-05

    申请号:US18186624

    申请日:2023-03-20

    CPC classification number: G01R31/31721 G01R31/31724 G01R31/318566

    Abstract: In an embodiment a processing system includes a reset circuit configured to receive a reset-request signal and one or more further reset-request signals, wherein the one or more further reset-request signals are provided by a processing core, one or more further circuits and/or a terminal of the processing system and to generate a combined reset-request signal by combining the reset-request signal and the one or more further reset-request signals, and a hardware test circuit including for each of the one or more further reset-request signals, a respective first combinational circuit configured to selectively assert the respective further reset-request signal, a second combinational logic circuit configured to selectively mask the combined reset-request signal, and a control circuit configured to repeat operations during a diagnostic phase.

    SRAM cell layout including arrangement of multiple active regions and multiple gate regions

    公开(公告)号:US11758707B2

    公开(公告)日:2023-09-12

    申请号:US17118372

    申请日:2020-12-10

    CPC classification number: H10B10/12 H10B10/18

    Abstract: A memory cell including a set of active regions that overlay a set of gate regions to form a pair of cross-coupled inverters. A first active region extends along a first axis. A first gate region extends transversely to the first active region and overlays the first active region to form a first transistor of the pair of cross-coupled inverters. A second gate region extends transversely to the first active region and overlays the first active region to form a second transistor of the pair of cross-coupled inverters. A second active region extends along a second axis and overlays the first gate region to form a third transistor of the pair of cross-coupled inverters. A fourth active region extending along a third axis and overlays a gate region to form a transistor of a read port.

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