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    Twin waveguide based design for photonic integrated circuits
    161.
    发明授权
    Twin waveguide based design for photonic integrated circuits 有权
    基于双波导的光子集成电路设计

    公开(公告)号：US07302124B2

    公开(公告)日：2007-11-27

    申请号：US09982001

    申请日：2001-10-18

    Applicant: Stephen R. Forrest ,  Milind Gokhale ,  Pavel Studenkov

    Inventor： Stephen R. Forrest ,  Milind Gokhale ,  Pavel Studenkov

    IPC: G02B6/36 ,  G02B6/12 ,  H01S5/00

    CPC classification number: G02B6/12004 ,  B82Y20/00 ,  G02B6/12021 ,  G02B6/2813 ,  G02B2006/12121 ,  G02B2006/12178 ,  G02B2006/12195 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1064 ,  H01S5/3403 ,  H01S5/34306 ,  H01S5/50

    Abstract: An asymmetric twin waveguide (ATG) structure is disclosed that significantly reduces the negative effects of inter-modal interference in symmetric twin-waveguide structures and which can be effectively used to implement a variety of optical devices. The ATG structure of the invention can be monolithically fabricated on a single epitaxial structure without the necessity of epitaxial re-growth. To achieve the ATG structure of the invention, the effective index of the passive waveguide in the ATG is varied from that of a symmetric twin waveguide such that one mode of the even and odd modes of propagation is primarily confined to the passive waveguide and the other to the active waveguide. The different effective indices of the two coupled waveguides result in the even and odd modes becoming highly asymmetric. As a result, the mode with the larger confinement factor in the active waveguide experiences higher gain and becomes dominant. In a further embodiment, the active waveguide is tapered to reduce coupling losses of the optical energy between the passive waveguide and the active waveguide. In a further embodiment, a grating region is incorporated atop the passive waveguide to select certain frequencies for transmission of light through the passive waveguide.

    Abstract translation: 公开了一种非对称双波导（ATG）结构，显着降低了对称双波导结构中模态间干扰的负面影响，可有效地用于实现各种光学器件。 本发明的ATG结构可以在单个外延结构上单片地制造，而不需要外延再生长。 为了实现本发明的ATG结构，ATG中的无源波导的有效指数与对称双波导的有效指数不同，使得偶数和奇数传播模式的一个模式主要限于无源波导和另一个 到有源波导。 两个耦合波导的不同有效指数导致均匀和奇数模式变得高度不对称。 结果，在有源波导中具有较大约束因子的模式经历较高的增益并成为主导的。 在另一个实施例中，有源波导是锥形的，以减少无源波导和有源波导之间的光能的耦合损耗。 在另一个实施例中，将光栅区域并入无源波导顶部，以选择某些频率以透射通过无源波导的光。

    Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier
    165.
    发明申请
    Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier 有权
    带有量子点的中频光敏器件嵌入能量栅栏屏障

    公开(公告)号：US20070151592A1

    公开(公告)日：2007-07-05

    申请号：US11598006

    申请日：2006-11-13

    Applicant: Stephen R. Forrest ,  Guodan Wei

    Inventor： Stephen R. Forrest ,  Guodan Wei

    IPC: H02N6/00

    CPC classification number: H01L31/035236 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  H01L31/09 ,  H01L31/18

    Abstract: A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

    Abstract translation: 多层第一半导体材料和多个点阵栅栏栅栏布置在第一电极和第二电极之间的堆叠中。 每个栅栏围栏屏障基本上由第二半导体材料的多个量子点组成，该第二半导体材料嵌入在与第三半导体材料的两层直接接触之间。 量子点的波函数作为至少一个中间带重叠。 第三半导体材料的层被布置为隧道势垒，以在第一材料的层中需要第一电子和/或第一孔，以进行量子力学隧道以在相应量子点内到达第二材料，并且要​​求 在第一半导体材料的层中的第二电子和/或第二孔，以进行量子力学隧道以到达第一半导体材料的另一层。

    Grey scale bistable display
    166.
    发明授权
    Grey scale bistable display 有权
    灰度双稳态显示

    公开(公告)号：US07053412B2

    公开(公告)日：2006-05-30

    申请号：US10607138

    申请日：2003-06-27

    Applicant: Michael Hack ,  Stephen R. Forrest ,  Jiangeng Xue

    Inventor： Michael Hack ,  Stephen R. Forrest ,  Jiangeng Xue

    IPC: H01L21/00

    CPC classification number: H01L27/3269 ,  G09G3/2014 ,  G09G3/2074 ,  G09G3/3258 ,  G09G3/3291 ,  G09G2300/0857 ,  G09G2320/0285 ,  G09G2320/043 ,  G09G2330/026 ,  G09G2360/148 ,  H01L27/3281

    Abstract: A light emitting device capable of displaying grey scale is provided. The device has a pixel having a plurality of bistable subpixels. Each subpixel has an ON state and an OFF state. A different power line is coupled to each bistable subpixel. Circuitry that can individually modulate the pulse width of a power signal transmitted through each power line is connected to the power lines. Each subpixel includes a first light emitting device the emits light when the subpixel is in the ON state. Each subpixel has substantially the same size and emits substantially the same spectrum of light in the ON state.

    Abstract translation: 提供能够显示灰度级的发光装置。 该装置具有具有多个双稳态子像素的像素。 每个子像素具有ON状态和OFF状态。 不同的电源线耦合到每个双稳态子像素。 可以单独调制通过每条电力线传输的电力信号的脉冲宽度的电路连接到电力线。 每个子像素包括当子像素处于ON状态时发光的第一发光器件。 每个子像素具有基本上相同的尺寸并且在ON状态下发射基本上相同的光谱。

    Twin waveguide based design for photonic integrated circuits
    168.
    发明授权
    Twin waveguide based design for photonic integrated circuits 失效

    公开(公告)号：US06819814B2

    公开(公告)日：2004-11-16

    申请号：US10642316

    申请日：2003-08-15

    Applicant: Stephen R. Forrest ,  Milind Gokhale ,  Pavel Studenkov

    Inventor： Stephen R. Forrest ,  Milind Gokhale ,  Pavel Studenkov

    IPC: G02B612

    CPC classification number: G02B6/12004 ,  B82Y20/00 ,  G02B6/12021 ,  G02B6/2813 ,  G02B2006/12121 ,  G02B2006/12178 ,  G02B2006/12195 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1064 ,  H01S5/3403 ,  H01S5/34306 ,  H01S5/50

    Abstract: An asymmetric twin waveguide (ATG) structure is disclosed that significantly reduces the negative effects of inter-modal interference in symmetric twin-waveguide structures and which can be effectively used to implement a variety of optical devices. The ATG structure of the invention can be monolithically fabricated on a single epitaxial structure without the necessity of epitaxial re-growth. To achieve the ATG structure of the invention, the effective index of the passive waveguide in the ATG is varied from that of a symmetric twin waveguide such that one mode of the even and odd modes of propagation is primarily confined to the passive waveguide and the other to the active waveguide. The different effective indices of the two coupled waveguides result in the even and odd modes becoming highly asymmetric. As a result, the mode with the larger confinement factor in the active waveguide experiences higher gain and becomes dominant. In a further embodiment, the active waveguide is tapered to reduce coupling losses of the optical energy between the passive waveguide and the active waveguide. In a further embodiment, a grating region is incorporated atop the passive waveguide to select certain frequencies for transmission of light through the passive waveguide.

    Self-aligned hybrid deposition
    169.
    发明授权
    Self-aligned hybrid deposition 有权
    自对准杂交沉积

    公开(公告)号：US06716656B2

    公开(公告)日：2004-04-06

    申请号：US10233482

    申请日：2002-09-04

    Applicant: Max Shtein ,  Stephen R. Forrest

    Inventor： Max Shtein ,  Stephen R. Forrest

    IPC: H01L2100

    CPC classification number: H01L51/001 ,  C23C14/042 ,  C23C14/12 ,  H01L51/0008 ,  H01L51/0013 ,  H01L51/0021 ,  H01L51/56 ,  Y02E10/549

    Abstract: A method of fabricating an organic device is provided. A first layer is deposited over a substrate through a mask by a first process that results in the first layer having a first area of coverage. A second layer is then deposited over the substrate through the mask by a second process that results in the second layer having a second area of coverage that is different from the first area of coverage.

    Abstract translation: 提供一种制造有机器件的方法。 第一层通过第一工艺通过掩模沉积在衬底上，该第一工艺导致第一层具有第一覆盖区域。 然后通过第二过程通过掩模将第二层沉积在衬底上，第二过程导致第二层具有与第一覆盖区域不同的第二覆盖区域。

    Method for patterning devices
    170.
    发明授权
    Method for patterning devices 有权
    图案形成装置的方法

    公开(公告)号：US06677174B2

    公开(公告)日：2004-01-13

    申请号：US10100866

    申请日：2002-03-19

    Applicant: Changsoon Kim ,  Paul E. Burrows ,  Stephen R. Forrest ,  Theodore Zhou

    Inventor： Changsoon Kim ,  Paul E. Burrows ,  Stephen R. Forrest ,  Theodore Zhou

    IPC: H01L2100

    CPC classification number: H01L27/3281 ,  H01L27/32 ,  H01L51/0013 ,  H01L51/0016 ,  H01L51/0017 ,  H01L51/0021 ,  H01L51/5012 ,  H01L51/5206 ,  H01L51/5231 ,  H01L51/56

    Abstract: The present invention relates to patterning methods for organic devices, and more particularly to patterning methods using a die. A first layer of organic materials is deposited over a substrate, followed by a first electrode layer. A first patterned die having a raised portion is then pressed onto the first electrode layer, such that the raised portion of the first patterned die contacts portions of the first electrode layer. The patterned die is removed, such that the portions of the first electrode layer in contact with the raised portions of the first patterned die are removed. In one embodiment of the invention, a second organic layer is then deposited over the first electrode layer, followed by a second electrode layer. A second patterned die having a raised portion is pressed onto the second electrode layer, such that the raised portion of the second patterned die contacts portions of the second electrode layer. The second patterned die is removed, such that the portions of the second electrode layer in contact with the raised portions of the second patterned die are removed. Preferably the patterned die is coated with an adhesive material such as a metal.

    Abstract translation: 本发明涉及有机器件的图案化方法，更具体地涉及使用模具的图案化方法。 第一层有机材料沉积在衬底上，随后是第一电极层。 然后将具有凸起部分的第一图案的模具压在第一电极层上，使得第一图案化裸片的凸起部分接触第一电极层的部分。 去除图案化的管芯，使得与第一图案化裸片的凸起部分接触的第一电极层的部分被去除。 在本发明的一个实施例中，然后在第一电极层上沉积第二有机层，随后沉积第二电极层。 具有凸起部分的第二图案的模具被压在第二电极层上，使得第二图案化芯片的凸起部分接触第二电极层的部分。 去除第二图案的芯片，使得与第二图案化芯片的凸起部分接触的第二电极层的部分被去除。 优选地，图案化的模具用诸如金属的粘合材料涂覆。

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