Abstract:
A method of driving a heating unit for a fuel cell reformer, a reformer applied with the method for driving the heating unit, and/or a fuel cell system including the reformer. The method includes: supplying an oxidant to the heating unit and absorbing the oxidant by a fuel oxidizing catalyst of the heating unit; supplying a fuel at an excessive amount to the heating unit and absorbing the fuel by the fuel oxidizing catalyst of the heating unit; and supplying the fuel and the oxidant to the heating unit at a stoichiometric ratio of the fuel to the oxidant ranging from 1:1 to 2:1, wherein the heating unit generates heat through an oxidizing catalyst reaction between the fuel and the oxidant.
Abstract:
A fuel oxidizing catalyst, a method of preparing the same, and a reformer and a fuel cell system including the same. In one embodiment, the fuel oxidizing catalyst for a fuel cell includes CeO2, MO (wherein M is a transition metal), and CuO. In this embodiment, the fuel oxidizing catalyst has a relatively high (or excellent) catalytic activity for a fuel oxidizing catalyst reaction and performs a fuel oxidizing catalyst reaction at a relatively low temperature even though it does not include a noble metal.
Abstract:
The carbon monoxide oxidizing catalyst for a reformer of a fuel cell system according to the present invention includes an active material including Au—Ag alloy nano-particles, and a carrier supporting the active material.
Abstract:
The reformer for a fuel cell system includes a reforming reaction part that generates hydrogen gas from a fuel through a catalyst reforming reaction using heat energy, and a carbon monoxide reducing part that reduces the concentration of carbon monoxide in the hydrogen gas, through an oxidizing reaction of hydrogen gas with the oxidant. The carbon monoxide reducing part includes a first reducing part including a first carbon monoxide oxidizing catalyst and a second reducing part including a second carbon monoxide oxidizing catalyst.
Abstract:
A semiconductor device to which magnetic domain wall movement is applied is provided. The semiconductor device includes a magnetic substance film in which magnetic domain walls are moved, and the magnetic substance film has a damping constant of 0.015 to 0.1.
Abstract:
A fuel reforming apparatus including reaction substrates is provided. The reaction substrates of the present invention is made of stainless steel, nickel steel, or chromium steel. Each of the reaction substrates has a channel formed on the surface of the reaction substrate. Reactant for oxidation reaction or for fuel reforming reaction flow through the channel. A catalyst containing layer is formed on the surface of the channel by directly oxidizing the surface of the channel. Therefore, the catalyst containing layer is formed with oxidized steel. A catalyst layer is formed on the catalyst containing layer. A pair of substrates can be laminated to make one substrate a thermal source unit and another a reforming reaction unit.
Abstract:
A plate-type heat exchanger for use in a fuel cell system that has a fuel cell stack and a reformer is provided. The heat exchanger includes a substrate and a pair of cover plates. The substrate has a first face and a second face opposite to the first face. The substrate is disposed between the cover plates, and combined with the cover plates to form a first passageway and a second passageway. The first passageway is formed in the first face and circulates steam discharged from the fuel cell stack. The steam or water condensed from the steam is supplied to a water supply source. The second passageway is formed in the second face, and circulates water supplied from the water supply source. The water is supplied to the reformer after the circulation. The heat exchanger of the present invention improves performance and efficiency of a fuel cell system.
Abstract:
A new method for improving the accuracy of read-write operations in a multi-level flash memory cell is disclosed. The method reduces the read margin disturbance caused by the accumulation of holes at a tunneling oxide or tunneling oxide-silicon interface underneath a floating gate of the cell by applying a positive stress to the word line after a program-erase cycle.
Abstract:
A semiconductor device in which polysilicon is used to form source and drain regions in an initial process step so as to reduce resistance of bit lines and minimize a junction capacitance and thus improve its reliability, and a method for fabricating the same are disclosed, the semiconductor device including a semiconductor substrate, trenches formed in predetermined areas of the semiconductor substrate, an insulating layer formed in the trenches and beneath a surface of the substrate to have a recess, a polysilicon layer formed on the insulating layer in the trench, source and drain regions formed at both sides of the polysilicon layer beneath a surface of the semiconductor substrate, and gates formed over the semiconductor substrate.
Abstract:
A method for determining the presence and/or the amount of an analyte in a sample which method comprises contacting the sample containing the analyte with a peroxidatively-active material to produce a peroxide, a substance capable of producing a detectable response in the presence of the peroxide as a measure of the analyte present in the sample, and a microperoxidase catalyst.