公开(公告)号：US20190355778A1

公开(公告)日：2019-11-21

申请号：US15984136

申请日：2018-05-18

Applicant: OmniVision Technologies, Inc.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson Tai ,  Lindsay Grant

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/359

Abstract: An image sensor pixel includes a photodiode disposed in a semiconductor material to generate image charge in response to light incident on a backside of the semiconductor material, and a pinning layer disposed in the semiconducting material and coupled to the photodiode. The pixel also includes a vertical overflow drain disposed in the semiconductor material and coupled to the pinning layer such that the pinning layer is disposed between the vertical overflow drain and the photodiode. A floating diffusion disposed in the semiconductor material proximate to the photodiode, and a vertical transfer transistor is disposed in part in the semiconductor material and coupled to the photodiode to transfer the image charge from the photodiode to the floating diffusion in response to a transfer signal applied to the gate terminal of the vertical transfer transistor.

公开(公告)号：US20190181173A1

公开(公告)日：2019-06-13

申请号：US16276561

申请日：2019-02-14

Applicant: OmniVision Technologies, Inc.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Lequn Liu

IPC: H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14685

Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.

公开(公告)号：US10312391B2

公开(公告)日：2019-06-04

申请号：US15285201

申请日：2016-10-04

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Duli Mao ,  Vincent Venezia ,  Dyson H. Tai ,  Bowei Zhang

IPC: H01L31/0352 ,  H01L31/02 ,  H01L31/107 ,  H01L31/0224 ,  H01L27/144

Abstract: An avalanche photodiode has a first diffused region of a first diffusion type overlying at least in part a second diffused region of a second diffusion type; and a first minority carrier sink region disposed within the first diffused region, the first minority carrier sink region of the second diffusion type and electrically connected to the first diffused region. In particular embodiments, the first diffusion type is N-type and the second diffusion type is P-type, and the device is biased so that a depletion zone having avalanche multiplication exists between the first and second diffused regions.

公开(公告)号：US10269850B2

公开(公告)日：2019-04-23

申请号：US15717047

申请日：2017-09-27

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Yi Ma

IPC: H01L27/146

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material, and a through-semiconductor-via coupled to a negative voltage source. Deep trench isolation structures are disposed between individual photodiodes in the plurality of photodiodes to electrically and optically isolate the individual photodiodes. The deep trench isolation structures include a conductive material coupled to the through-semiconductor-via, and a dielectric material disposed on sidewalls of the deep trench isolation structures between the semiconductor material and the conductive material.

公开(公告)号：US10116889B2

公开(公告)日：2018-10-30

申请号：US15443783

申请日：2017-02-27

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Qin Wang ,  Duli Mao ,  Dyson H. Tai ,  Lindsay Alexander Grant

IPC: H04N5/335 ,  H04N5/369 ,  H04N5/378 ,  H04N9/04 ,  H04N5/374 ,  H04N5/232

Abstract: An image sensor includes an array of split dual photodiode (DPD) pairs. First groupings of the array of split DPD pairs consist entirely of either first-dimension split DPD pairs or entirely of second-dimension split DPD pairs. Each first grouping of the array of split DPD pairs consisting of the first-dimension split DPD pairs is adjacent to an other first grouping of the array of split DPD pairs consisting of the second-dimension split DPD pairs. The first-dimension is orthogonal to the second-dimension. A plurality of floating diffusion (FD) regions is arranged in each first grouping of the split DPD pairs. Each one of a plurality of transfer transistors is coupled to a respective photodiode of a respective split DPD pair, and is coupled between the respective photodiode and a respective one of the plurality of FD regions.

公开(公告)号：US10079261B1

公开(公告)日：2018-09-18

申请号：US15680005

申请日：2017-08-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qin Wang ,  Bill Phan ,  Sing-Chung Hu ,  Gang Chen

IPC: H01L27/146 ,  H01L29/417 ,  H01L21/3215 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311

CPC classification number: H01L27/14643 ,  H01L21/02532 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/3215 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14689 ,  H01L29/41783

Abstract: An image sensor includes a plurality of photodiodes and a floating diffusion disposed in a semiconductor material. The image sensor also includes a plurality of transfer gates coupled between the plurality of photodiodes and the floating diffusion to transfer the image charge generated in the plurality of photodiodes into the floating diffusion. Peripheral circuitry is disposed proximate to the plurality of photodiodes and coupled to receive the image charge from the plurality of photodiodes. A shallow trench isolation structure is laterally disposed, at least in part, between the plurality of photodiodes and the peripheral circuitry to prevent electrical crosstalk between the plurality of photodiodes and the peripheral circuitry. The peripheral circuitry includes one or more transistors including a source electrode and a drain electrode that are raised above a surface of the semiconductor material.

公开(公告)号：US20180249136A1

公开(公告)日：2018-08-30

申请号：US15967678

申请日：2018-05-01

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Duli Mao ,  Dyson Hsin-Chih Tai

IPC: H04N9/083 ,  H04N5/225 ,  H01L27/146 ,  H04N5/369 ,  H04N9/04

CPC classification number: H04N9/083 ,  H01L27/14605 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H04N5/2252 ,  H04N5/2253 ,  H04N5/2257 ,  H04N5/35563 ,  H04N5/3696 ,  H04N9/045

Abstract: An image sensor includes a substrate, a first set of sensor pixels formed on the substrate, and a second set of sensor pixels formed on the substrate. The sensor pixels of the first set are arranged in rows and columns and are configured to detect light within a first range of wavelengths (e.g., white light). The sensor pixels of the second set are arranged in rows and columns and are each configured to detect light within one of a set of ranges of wavelengths (e.g., red, green, and blue). Each range of wavelengths of the set of ranges of wavelengths is a subrange of said first range of wavelengths, and each pixel of the second set of pixels is smaller than each pixel of the first set of pixels.

公开(公告)号：US20180145099A1

公开(公告)日：2018-05-24

申请号：US15874648

申请日：2018-01-18

Applicant: OmniVision Technologies, Inc.

Inventor： Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai

IPC: H01L27/146 ,  H01L31/18 ,  H01L31/0392

CPC classification number: H01L27/1461 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14689 ,  H01L31/03921 ,  H01L31/1812

Abstract: A method of image sensor fabrication includes growing a semiconductor material having an illuminated surface and a non-illuminated surface, where the semiconductor material includes silicon and germanium and a germanium concentration increases in a direction of the non-illuminated surface. The method further includes forming a plurality of photodiodes, including a doped region and a heavily doped region, in the semiconductor material, where the doped region is of an opposite majority charge carrier type as the heavily doped region. A plurality of isolation regions are formed and disposed between individual photodiodes in the plurality of photodiodes, where the plurality of isolation regions surround, at least in part, the individual photodiodes and electrically isolate the individual photodiodes.

公开(公告)号：US09911780B1

公开(公告)日：2018-03-06

申请号：US15388888

申请日：2016-12-22

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qin Wang ,  Gang Chen ,  Duli Mao

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14636 ,  H01L27/14629 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H01L31/18

Abstract: An image sensor includes a semiconductor material including a plurality of photodiodes disposed in the semiconductor material. The image sensor also includes a first insulating material disposed proximate to a frontside of the semiconductor material, and an interconnect disposed in the first insulating material proximate to the frontside of the semiconductor material. A metal pad extends from a backside of the semiconductor material through the first insulating material and contacts the interconnect. A metal grid is disposed proximate to the backside of the semiconductor material, and the semiconductor material is disposed between the metal grid and the first insulating material disposed proximate to the frontside.

公开(公告)号：US09911770B2

公开(公告)日：2018-03-06

申请号：US15169477

申请日：2016-05-31

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai

IPC: H04N5/347 ,  H01L27/146 ,  H01L31/0392 ,  H01L31/18

CPC classification number: H01L27/1461 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14689 ,  H01L31/03921 ,  H01L31/1812

Abstract: An image sensor includes a semiconductor material having an illuminated surface and a non-illuminated surface. A plurality of photodiodes is disposed in the semiconductor material to receive image light through the illuminated surface. The semiconductor material includes silicon and germanium, and the germanium concentration increases in a direction of the non-illuminated surface. A plurality of isolation regions is disposed between individual photodiodes in the plurality of photodiodes. The plurality of isolation regions surround, at least in part, the individual photodiodes and electrically isolate the individual photodiodes.