MIXED-SCALE ELECTRONIC INTERFACES
    163.
    发明申请
    MIXED-SCALE ELECTRONIC INTERFACES 有权
    混合尺寸电子接口

    公开(公告)号:US20100197117A1

    公开(公告)日:2010-08-05

    申请号:US12761300

    申请日:2010-04-15

    Abstract: Certain embodiments of the present invention are directed to a method of programming nanowire-to-conductive element electrical connections. The method comprises: providing a substrate including a number of conductive elements overlaid with a first layer of nanowires, at least some of the conductive elements electrically coupled to more than one of the nanowires through individual switching junctions, each of the switching junctions configured in either a low-conductance state or a high-conductance state; and switching a portion of the switching junctions from the low-conductance state to the high-conductance state or the high-conductance state to the low-conductance state so that individual nanowires of the first layer of nanowires are electrically coupled to different conductive elements of the number of conductive elements using a different one of the switching junctions configured in the high-conductance state. Other embodiments of the present invention are directed to a nanowire structure including a mixed-scale interface.

    Abstract translation: 本发明的某些实施例涉及一种编程纳米线至导电元件电连接的方法。 该方法包括:提供包括多个覆盖有第一纳米线层的导电元件的衬底,至少一些导电元件通过单独的开关结与多于一个的纳米线电耦合,每个开关结配置在 低电导状态或高电导状态; 以及将所述开关结的一部分从所述低电导状态切换到所述高电导状态或所述高电导状态至所述低电导状态,使得所述第一纳米线层的单个纳米线电耦合到不同的导电元件 使用在高电导状态下配置的不同的一个开关结的导电元件的数量。 本发明的其它实施方案涉及包括混合规模界面的纳米线结构。

    Selectively altering a predetermined portion or an external member in contact with the predetermined portion
    164.
    发明授权
    Selectively altering a predetermined portion or an external member in contact with the predetermined portion 失效
    选择性地改变与预定部分接触的预定部分或外部构件

    公开(公告)号:US07709298B2

    公开(公告)日:2010-05-04

    申请号:US11779423

    申请日:2007-07-18

    Applicant: Zhiyong Li

    Inventor: Zhiyong Li

    CPC classification number: H01L29/125 B82Y10/00

    Abstract: A method for selectively altering a predetermined portion of an object or an external member in contact with the predetermined portion of the object is disclosed. The method includes selectively electrically addressing the predetermined portion, thereby locally resistive heating the predetermined portion, and exposing the object, including the predetermined portion, to the external member.

    Abstract translation: 公开了一种用于选择性地改变与物体的预定部分接触的物体或外部构件的预定部分的方法。 该方法包括选择性地电寻址预定部分,由此局部地阻止加热预定部分,并将包括预定部分的物体暴露于外部构件。

    Mixed-scale electronic interfaces
    169.
    发明申请
    Mixed-scale electronic interfaces 失效
    混合电子接口

    公开(公告)号:US20080099929A1

    公开(公告)日:2008-05-01

    申请号:US11590492

    申请日:2006-10-30

    Abstract: Certain embodiments of the present invention are directed to a method of fabricating a mixed-scale electronic interface. A substrate is provided with a first set of conductive elements. A first layer of nanowires may be formed over the first set of conductive elements. A number of channels may be formed, with each of the channels extending diagonally through a number of the nanowires of the first layer. A number of pads may be formed, each of which is electrically interconnected with an underlying conductive element of the first set of conductive elements and one or more adjacent nanowires of the first layer of nanowires. The pads and corresponding electrically interconnected nanowires define a number of pad-interconnected-nanowire-units. Additional embodiments are directed to a method of forming a nanoimprinting mold and a method of selectively programming nanowire-to-conductive element electrical connections.

    Abstract translation: 本发明的某些实施例涉及一种制造混合比例电子接口的方法。 衬底设置有第一组导电元件。 可以在第一组导电元件上形成第一层纳米线。 可以形成多个通道,其中每个通道对角地延伸穿过第一层的多个纳米线。 可以形成多个焊盘,每个焊盘与第一组导电元件的下面的导电元件和第一纳米线层的一个或多个相邻的纳米线电互连。 焊盘和相应的电互连纳米线限定了多个衬垫互连的纳米线单元。 另外的实施例涉及形成纳米压印模具的方法和选择性地编程纳米线至导电元件电连接的方法。

    Semiconductor substrate cleaning apparatus
    170.
    发明申请
    Semiconductor substrate cleaning apparatus 审中-公开
    半导体基板清洗装置

    公开(公告)号:US20080053486A1

    公开(公告)日:2008-03-06

    申请号:US11891339

    申请日:2007-08-09

    CPC classification number: B08B3/04 B08B3/02 H01L21/67028

    Abstract: A semiconductor substrate processing apparatus and a method for processing semiconductor substrates are provided. The semiconductor substrate processing apparatus may include a liquid container where a semiconductor substrate may be immersed in a semiconductor processing liquid. The semiconductor substrate may then be removed from the semiconductor processing liquid while vapor is directed at a surface of the semiconductor substrate where the semiconductor substrate contacts a surface of the processing liquid.

    Abstract translation: 提供半导体衬底处理设备和半导体衬底的处理方法。 半导体基板处理装置可以包括其中半导体基板可以浸入半导体处理液体中的液体容器。 然后可以从半导体处理液体中去除半导体衬底,同时蒸汽指向半导体衬底的半导体衬底接触处理液表面的表面。

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