公开(公告)号：US20030122466A1

公开(公告)日：2003-07-03

申请号：US10160413

申请日：2002-05-30

Inventor： Seong Deok Ahn ,  Jin Ho Lee ,  Kyoung Ik Cho

IPC: H01J001/02

CPC classification number: H01J9/025 ,  H01J2201/30403

Abstract: The present invention relates to a field emission device and a method of fabricating the same. The method includes forming a hole having a nanometer size using silicon semiconductor process and then forming an emitter within the hole to form a field emission device. Therefore, the present invention can reduce the driving voltage and thus lower the power consumption.

Abstract translation: 场致发射器件及其制造方法技术领域本发明涉及场致发射器件及其制造方法。 该方法包括使用硅半导体工艺形成具有纳米尺寸的孔，然后在孔内形成发射体以形成场致发射器件。 因此，本发明可以降低驱动电压，从而降低功耗。

公开(公告)号：US06537122B1

公开(公告)日：2003-03-25

申请号：US09555846

申请日：2000-06-05

Applicant: Daniel Irwin Amey, Jr. ,  Robert Joseph Bouchard ,  Syed Ismat Ullah Shah

Inventor： Daniel Irwin Amey, Jr. ,  Robert Joseph Bouchard ,  Syed Ismat Ullah Shah

IPC: H01J904

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J2201/30403

Abstract: Patterned graphite electron emitters are disclosed. These field emitters find particular usefulness in field emitter cathodes and display panels. These graphite field emitters can be formed by screen printing a paste comprised of graphite and electrically insulating material (glass frit) in the desired patterned paste and bombarding the fire product with an ion beam.

Abstract translation: 公开了图案化石墨电子发射体。 这些场发射器在场发射极阴极和显示面板中特别有用。 这些石墨场发射体可以通过丝网印刷由石墨和电绝缘材料（玻璃料）组成的糊料形成在所需的图案糊料中并用离子束轰击消防产品。

公开(公告)号：US20020175608A1

公开(公告)日：2002-11-28

申请号：US10193016

申请日：2002-07-09

Applicant: Micron Technology, Inc.

Inventor： Terry L. Gilton ,  Paul A. Morgan

IPC: H01J001/02

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2329/00

Abstract: Improved methods and structures are provided for an array of vertical geometries which may be used as emitter tips, as a self aligned gate structure surrounding field emitter tips, or as part of a flat panel display. The present invention offers controlled size in emitter tip formation under a more streamlined process. The present invention further provides a more efficient method to control the gate to emitter tip proximity in field emission devices. The novel method of the present invention includes implanting a dopant in a patterned manner into the silicon substrate and anodizing the silicon substrate in a controlled manner causing a more heavily doped region in the silicon substrate to form a porous silicon region.

Abstract translation: 提供了用于垂直几何阵列的改进的方法和结构，其可以用作发射器尖端，作为围绕场发射器尖端的自对准栅极结构，或者作为平板显示器的一部分。 本发明在更简化的过程中提供了在发射极尖端形成中的受控尺寸。 本发明还提供了一种更有效的方法来控制场致发射器件中的栅极与发射极尖端的接近。 本发明的新颖方法包括以图案化的方式将掺杂剂注入到硅衬底中并以受控的方式对硅衬底进行阳极氧化，从而在硅衬底中形成更重掺杂的区域以形成多孔硅区域。

公开(公告)号：US06448708B1

公开(公告)日：2002-09-10

申请号：US09588118

申请日：2000-05-31

Applicant: Kishore K. Chakravorty ,  Swayambu Ramani ,  Stephanie J. Oberg ,  Johan Knall ,  Duane A. Haven ,  Ronald S. Besser ,  Paul J. Louris ,  Arthur J. Learn ,  Christopher J. Spindt ,  Roger W. Barton

Inventor： Kishore K. Chakravorty ,  Swayambu Ramani ,  Stephanie J. Oberg ,  Johan Knall ,  Duane A. Haven ,  Ronald S. Besser ,  Paul J. Louris ,  Arthur J. Learn ,  Christopher J. Spindt ,  Roger W. Barton

IPC: H01J102

CPC classification number: H01J9/025 ,  H01J1/30 ,  H01J9/148 ,  H01J2201/30403 ,  H01J2329/00

Abstract: A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate. The cathodic structure includes a emitter electrode metal composed of strips of aluminum overlain by a layer of cladding material. The use of aluminum and cladding material to form emitter electrode metal gives emitter electrode metal segments which are highly conductive due to the high conductivity of aluminum. By using a suitable cladding material and processing steps, a bond between the aluminum and the cladding material is formed which has good electrical conductivity. In one embodiment, tantalum is used as a cladding material. Tantalum forms a bond with the overlying resistive layer which has good electrical conductivity. Thus, the resulting structure has very high electrical conductivity through the aluminum layer and high conductivity into the resistive layer. Electrode structures that use resistor material, chromium-containing material, nickel and vanadium alloy, and gold are also disclosed.

Abstract translation: 平板显示器和平板显示器的形成方法。 在一个实施例中，平板显示器包括形成在背板上的有效区域内的阴极结构。 阴极结构包括由覆盖材料层覆盖的铝条构成的发射极电极金属。 使用铝和包层材料形成发射极电极金属，由于铝的高导电性而导致高导电性的发射极电极金属片段。 通过使用合适的覆层材料和加工步骤，形成铝和包层材料之间的结合，其具有良好的导电性。 在一个实施例中，钽用作包层材料。 钽与具有良好导电性的上覆电阻层形成键。 因此，所得结构通过铝层具有非常高的导电性，并且在电阻层中具有高导电性。 还公开了使用电阻材料，含铬材料，镍和钒合金以及金的电极结构。

公开(公告)号：US06425791B1

公开(公告)日：2002-07-30

申请号：US09652746

申请日：2000-08-31

Applicant: Kanwal K. Raina ,  James J. Alwan

Inventor： Kanwal K. Raina ,  James J. Alwan

IPC: H01J902

CPC classification number: H01J1/3044 ,  H01J31/127 ,  H01J2201/30403

Abstract: A field emission device is disclosed having a buffer layer positioned between an underlying cathode conductive layer and an overlying resistor layer. The buffer layer consists of substantially undoped amorphous silicon. Any pinhole defects or discontinuities that extend through the resistor layer terminate at the buffer layer, thereby preventing the problems otherwise caused by pinhole defects. In particular, the buffer layer prevents breakdown of the resistor layer, thereby reducing the possibility of short circuiting. The buffer layer further reduces the risk of delamination of various layers or other irregularities arising from subsequent processing steps. Also disclosed are methods of making and using the field emission device having the buffer layer.

Abstract translation: 公开了一种场致发射器件，其具有位于下面的阴极导电层和上覆电阻层之间的缓冲层。 缓冲层由基本上未掺杂的非晶硅组成。 延伸通过电阻层的任何针孔缺陷或不连续性终止于缓冲层，从而防止由针孔缺陷引起的问题。 特别地，缓冲层防止了电阻层的破坏，从而降低了短路的可能性。 缓冲层进一步降低了由后续处理步骤引起的各种层的分层或其它不规则的风险。 还公开了制造和使用具有缓冲层的场致发射器件的方法。

公开(公告)号：US06417606B1

公开(公告)日：2002-07-09

申请号：US09414840

申请日：1999-10-08

Applicant: Masayuki Nakamoto ,  Katsuyoshi Fukuda

Inventor： Masayuki Nakamoto ,  Katsuyoshi Fukuda

IPC: H01J130

CPC classification number: H01J1/304 ,  H01J2201/30403 ,  H01J2201/30426 ,  Y10S977/939

Abstract: In a field emission cold-cathode device, a cathode line or electrode is arranged on a glass substrate. An emitter is arranged on the cathode electrode and is formed of a conductive layer, a low-work-function material layer, and a tip layer stacked one on top of the other in this order. The emitter has a pyramid shape in which the tip layer has a sharp tip. The low-work-function material layer is made of a material having a work function of 4.0 eV or less. The tip layer is made of a material having a negative electron affinity and formed of granular bodies or linear bodies each having a diameter of 100 nm or less.

Abstract translation: 在场发射冷阴极器件中，阴极线或电极布置在玻璃衬底上。 发射极配置在阴极上，由依次层叠的导电层，低功函数材料层和顶层构成。 发射器具有金字塔形状，其中尖端层具有尖锐的尖端。 低功函数材料层由功函数为4.0eV以下的材料构成。 尖端层由具有负电子亲和性的材料制成，并且由直径为100nm以下的粒状体或线状体构成。

公开(公告)号：US06204596B1

公开(公告)日：2001-03-20

申请号：US09107392

申请日：1998-06-30

Applicant: John M. Macaulay ,  Peter C. Searson ,  Robert M. Duboc, Jr. ,  Christopher J. Spindt

Inventor： John M. Macaulay ,  Peter C. Searson ,  Robert M. Duboc, Jr. ,  Christopher J. Spindt

IPC: H01J102

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319 ,  Y10T428/2973 ,  Y10T428/298

Abstract: An electron-emitting device contains a lower conductive region (22), a porous insulating layer (24A, 24B, 24D, 24E, or 24F) overlying the lower conductive region, and a multiplicity of electron-emissive elements (30, 30A, or 30B) situated in pores (281) extending through the porous layer. The pores are situated at locations substantially random relative to one another. The lower conductive region typically contains a highly conductive portion (22A) and an overlying highly resistive portion (22B). Alternatively or additionally, a patterned gate layer (34B, 40B, or 46B) overlies the porous layer. Openings (36, 42, or 541) corresponding to the filaments extend through the gate layer at locations generally centered on the filaments such that the filaments are separated from the gate layer.

Abstract translation: 电子发射器件包含覆盖在下导电区域上的下导电区域（22），多孔绝缘层（24A，24B，24D，24E或24F）和多个电子发射元件（30,30A或 30B）位于延伸穿过多孔层的孔（281）中。 孔位于相对于彼此基本上随机的位置。 下导电区域通常包含高导电部分（22A）和覆盖的高电阻部分（22B）。 或者或另外，图案化的栅极层（34B，40B或46B）覆盖在多孔层上。 对应于长丝的开口（36,42或541）在通常以灯丝为中心的位置处延伸穿过栅极层，使得灯丝与栅极层分离。

公开(公告)号：US6091188A

公开(公告)日：2000-07-18

申请号：US50636

申请日：1998-03-27

Applicant: Yoshinori Tomihari ,  Fumihiko Matsuno

Inventor： Yoshinori Tomihari ,  Fumihiko Matsuno

IPC: H01J1/304 ,  H01J3/02 ,  H01J1/30

CPC classification number: H01J3/022 ,  H01J2201/30403

Abstract: There is provided a field emission cold cathode including a semiconductor substrate, an insulating layer formed on the semiconductor substrate, an electrically conductive gate electrode layer formed on the insulating layer, a plurality of cavities being formed throughout both the insulating layer and the gate electrode layer, a conical emitter formed on the semiconductor substrate in each one of the cavities, and an insulating wall formed at least in the semiconductor substrate so that the insulating wall surrounds each one of the cavities. The insulating wall partitions the semiconductor substrate into a first group of blocks located at a marginal end of the semiconductor substrate and a second group of blocks located within the first group of blocks. Each one of the first group of blocks is designed to have a greater area than an area of each one of the second group of blocks. The field emission cold cathode makes it possible to uniformize an emission current in all of the blocks to thereby provide uniform brightness to images in a display area.

Abstract translation: 提供一种场致发射冷阴极，包括半导体衬底，形成在半导体衬底上的绝缘层，形成在绝缘层上的导电栅电极层，在绝缘层和栅电极层两端形成的多个空腔 ，形成在每个空腔中的半导体衬底上的锥形发射体，以及至少在半导体衬底中形成的绝缘壁，使得绝缘壁围绕每个空腔。 绝缘壁将半导体衬底分隔成位于半导体衬底的边缘端的第一组块和位于第一组块内的第二组块。 第一组块中的每一个被设计成具有比第二组块中的每个块的区域更大的面积。 场致发射冷阴极使得可以使所有块中的发射电流均匀化，从而为显示区域中的图像提供均匀的亮度。

公开(公告)号：US6057637A

公开(公告)日：2000-05-02

申请号：US884450

申请日：1997-06-27

Applicant: Alexander Karlwalter Zettl ,  Marvin Lou Cohen

Inventor： Alexander Karlwalter Zettl ,  Marvin Lou Cohen

IPC: H01J1/304 ,  H01J1/30

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J2201/30403 ,  H01J2201/30469 ,  Y10S977/939 ,  Y10T428/2916 ,  Y10T428/2918 ,  Y10T428/2975

Abstract: A novel field emitter material, field emission electron source, and commercially feasible fabrication method is described. The inventive field emission electron source produces reliable electron currents of up to 400 mA/cm.sup.2 at 200 volts. The emitter is robust and the current it produces is not sensitive to variability of vacuum or the distance between the emitter tip and the cathode. The novel emitter has a sharp turn-on near 100 volts.

Abstract translation: 描述了一种新颖的场致发射体材料，场发射电子源和商业上可行的制造方法。 本发明的场致发射电子源在200伏特下产生高达400mA / cm 2的可靠的电子电流。 发射极是稳健的，其产生的电流对真空的可变性或发射极尖端和阴极之间的距离不敏感。 新型发射器具有近100伏特的尖锐导通。

公开(公告)号：US6040613A

公开(公告)日：2000-03-21

申请号：US588738

申请日：1996-01-19

Applicant: Everett A. McTeer ,  Russell C. Zahorik ,  Scott G. Meikle

Inventor： Everett A. McTeer ,  Russell C. Zahorik ,  Scott G. Meikle

IPC: H01J9/02 ,  G09F9/30 ,  H01J1/52 ,  H01J29/04 ,  H01J29/89 ,  H01J29/96 ,  H01J31/12 ,  H01L21/027 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532 ,  H01L31/0216 ,  H01L31/0232

CPC classification number: H01L21/76849 ,  H01J1/52 ,  H01J29/896 ,  H01J31/127 ,  H01L21/0276 ,  H01L21/32139 ,  H01L21/7685 ,  H01L21/76858 ,  H01L21/76885 ,  H01L23/53223 ,  H01L31/02161 ,  H01J2201/30403 ,  H01J2201/319 ,  H01L2221/1078 ,  H01L2924/0002

Abstract: Titanium aluminum nitrogen ("Ti--Al--N") is deposited onto a semiconductor substrate area to serve as an antireflective coating. For wiring line fabrication processes, the Ti--Al--N layer serves as a cap layer which prevents unwanted reflection of photolithography light (i.e., photons) during fabrication. For field emission display devices (FEDs), the Ti--Al--N layer prevents light originating at the display screen anode from penetrating transistor junctions that would hinder device operation. For the wiring line embodiment an aluminum conductive layer and a titanium-aluminum underlayer are formed beneath the antireflective cap layer. The Ti--Al underlayer reduces the shrinkage which occurs in the aluminum conductive layer during heat treatment.

Abstract translation: 将钛铝氮（“Ti-Al-N”）沉积到半导体衬底区域上以用作抗反射涂层。 对于布线生产工艺，Ti-Al-N层用作遮盖层，防止在制造过程中光刻光（即光子）的不期望的反射。 对于场致发射显示装置（FED），Ti-Al-N层防止在显示屏阳极处产生的光穿透将阻碍器件工作的晶体管结。 对于布线实施例，在抗反射盖层下方形成铝导电层和钛 - 铝底层。 Ti-Al底层减少了在热处理期间在铝导电层中发生的收缩。