Abstract:
A semiconductor memory device includes a code channel for outputting a plurality of code signals based on a code control signal inputted from an external source; a termination resistor decoder for decoding a chip selection signal, an on die termination (ODT) control signal and the plurality of code signals and outputting a plurality of selection signals based on decoded signals; and an ODT block for providing an output data pad with impedance of a termination resistor which is selected in response to the plurality of selection signals.
Abstract:
Circuit and method for recovering clock data in highly integrated semiconductor memory apparatus includes a plurality of signal receiving units configured to receive signals through a plurality of input/output pads and transfer the signals according to a receiving reference clock, the signal receiving units being divided into groups, a plurality of phase detection units configured to detect phases of signals output from the groups of the signal receiving units, a plurality of phase detection control units configured to control the phase detection units so that the phase detection units sequentially detect the phases of the signals output from each of the groups of the signal receiving units and a notification unit configured to output signals output from the phase detection units.
Abstract:
The present invention relates to a building that uses composite light-weight panels for structure and a construction method therefor, more particularly, to a building constructed without pillars using composite light weight panels for structure and a construction method therefor, wherein the building comprises: a steel floor made out of sectional steel for example; walls which are formed by joining composite light-weight panels for structure having steel structure frames installed at corners to the steel floor by welding or joining means, neighboring steel structure frames being joined together by welding or joining means to form walls; roof frames which are constituted by a steel structure and have a truss structure to be positioned on the top of the walls and joined to the wall panels by welding or joining means; wall inner/outer coverings applied to the inner/outer peripherals of the walls; and roof coverings applied to the outer peripheral face of the roof frame.
Abstract:
A display panel includes gate lines formed on a substrate, storage electrode lines formed on the substrate and being parallel to the gate lines, data lines insulated from the gate lines and crossing the gate lines, a plurality of thin film transistors (TFTs) connected with the gate lines and the data lines, and pixel electrodes having a first sub-electrode connected with a TFT and a second sub-electrode formed at a side opposite the first sub-electrode with respect to a gate line, wherein the TFT and a storage electrode line are disposed between the first and second sub-electrodes.
Abstract:
A duty correction circuit includes a duty ratio sensor for controlling a duty ratio sensing speed by a sensing speed control signal and outputting a correction signal by sensing a duty ratio of a clock, and a duty ratio corrector for controlling the duty ratio of the clock in response to the correction signal.
Abstract:
A circuit for controlling a driver of a semiconductor memory apparatus includes a driving unit having an impedance that is set according to a code value; a driving reinforcing control unit configured to output an adjustment code for a predetermined time; and a driving reinforcing unit configured to output a reinforcing code obtained by adjusting the code value using the adjustment code, wherein the reinforcing code reinforce a driving capability of the driving unit.
Abstract:
A thin film transistor substrate having a semiconductor layer including a low concentration region and a source region/drain region adjacent to the low concentration region at both sides of a channel region made of polysilicon; a gate insulating layer and a conductive layer on the substrate the conductive layer patterned to form a gate electrode.
Abstract:
A delay locked loop circuit for compensating for a phase skew of a memory device includes a first delay locking unit configured to delay an external clock of the memory device by a first amount of delay to output a first internal clock, a second locking unit configured to delay the external clock by a second amount of delay to output a second internal clock, the second amount of delay being greater than the first amount of delay, and a selecting unit configured to select one of the first internal clock and the second internal clock as an internal clock of the memory device.
Abstract:
A washing machine and a method of controlling the washing machine may be provided. The washing machine may include a drum in which laundry are provided and rotated. A laundry amount may be sensed. The drum may operate at a first speed so that a part of the laundry tumbles within the drum and another part of the laundry adheres to the drum or the drum operates at a second speed so that the laundry adheres to the drum according to the sensed laundry amount. Accordingly, at a time of a dehydration cycle, stability of the washing machine and a laundry balancing can be ensured.
Abstract:
A semiconductor memory device including a first clock transmission path configured to receive a source clock swinging at a CML level through a clock transmission line in response to an enable signal, and to convert the source clock into a clock swinging at a CMOS level. The device also includes a second clock transmission path configured to convert the source clock in a clock swinging at a CMOS level in response to the enable signal, and to output the converted clock through the clock transmission line and a data output unit configured to output data in response to output clocks of the first and second clock transmission lines.