公开(公告)号：US10147599B2

公开(公告)日：2018-12-04

申请号：US15789370

申请日：2017-10-20

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Mark Saly ,  David Thompson ,  Mihaela Balseanu ,  Li-Qun Xia

IPC: H01L21/311 ,  H01L21/02 ,  C23C16/455 ,  C23C16/30 ,  C23C16/34 ,  C23C16/40

Abstract: Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.

公开(公告)号：US10096514B2

公开(公告)日：2018-10-09

申请号：US15658846

申请日：2017-07-25

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  David Thompson

IPC: H01L21/311 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532

Abstract: Methods for filing a feature on a substrate surface comprising depositing a conformal nitride film on the substrate surface and at least one feature on the surface, oxidizing a portion of the nitride film to form an asymmetric oxide film on top of the nitride film and etching the oxide film from the nitride film to leave a v-shaped nitride film in the at least one feature.

公开(公告)号：US20180204721A1

公开(公告)日：2018-07-19

申请号：US15919902

申请日：2018-03-13

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Ben-Li Sheu ,  David Knapp ,  David Thompson

IPC: H01L21/02 ,  C23C16/18 ,  C23C16/34

CPC classification number: H01L21/02271 ,  C23C16/18 ,  C23C16/34 ,  H01L21/02142 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76873 ,  H01L23/53238

Abstract: Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.

公开(公告)号：US09982345B2

公开(公告)日：2018-05-29

申请号：US15210352

申请日：2016-07-14

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  David Knapp ,  Jeffrey W. Anthis

IPC: C23C16/18 ,  C23C16/455 ,  C07F5/06

CPC classification number: C23C16/45536 ,  C07F5/062 ,  C23C16/18 ,  C23C16/45553

Abstract: Methods of depositing a metal-containing film by exposing a substrate surface to a first precursor and a reactant, where one or more of the first precursor and the react comprises a compound having the general formula of one or more of M(XR3)2, M(XR3)3, M(XR3)4, M(XR3)5 and M(XR3)6, where M is selected from the group consisting of Al, Ti, Ta, Zr, La, Hf, Ce, Zn, Cr, Sn, V and combinations thereof, each X is one or more of C, Si and Ge and each R is independently a methyl or ethyl group and comprises substantially no β-H.

公开(公告)号：US20180061629A1

公开(公告)日：2018-03-01

申请号：US15804503

申请日：2017-11-06

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  David Thompson ,  Lakmal C. Kalutarage

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/0228 ,  C23C16/30 ,  C23C16/45531 ,  C23C16/56 ,  H01L21/02126

Abstract: Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.

公开(公告)号：US20180040470A1

公开(公告)日：2018-02-08

申请号：US15789370

申请日：2017-10-20

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Mark Saly ,  David Thompson ,  Mihaela Balseanu ,  Li-Qun Xia

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/30 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31111

Abstract: Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.

公开(公告)号：US20180025907A1

公开(公告)日：2018-01-25

申请号：US15654185

申请日：2017-07-19

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Mark Saly ,  David Thompson ,  Abhijit Basu Mallick ,  Tejasvi Ashok ,  Pramit Manna

IPC: H01L21/02 ,  H01L21/762

CPC classification number: H01L21/02274 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/76224

Abstract: Methods for seam-less gapfill comprising forming a flowable film by exposing a substrate surface to a silicon-containing precursor and a co-reactant are described. The silicon-containing precursor has at least one akenyl or alkynyl group. The flowable film can be cured by any suitable curing process to form a seam-less gapfill.

公开(公告)号：US09812318B2

公开(公告)日：2017-11-07

申请号：US14801215

申请日：2015-07-16

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  David Thompson ,  Lakmal Kalutarage

IPC: C23C16/30 ,  H01L21/02 ,  C23C16/56 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/30 ,  C23C16/45531 ,  C23C16/56 ,  H01L21/02126

Abstract: Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.

公开(公告)号：US09799511B2

公开(公告)日：2017-10-24

申请号：US15142514

申请日：2016-04-29

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Mark Saly ,  David Thompson ,  Mihaela Balseanu ,  Li-Qun Xia

IPC: H01L21/311 ,  H01L21/02 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/30 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31111

Abstract: Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.

公开(公告)号：US09653352B2

公开(公告)日：2017-05-16

申请号：US14300773

申请日：2014-06-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Liqi Wu ,  Sang Ho Yu ,  Kazuya Daito ,  Kie Jin Park ,  Kai Wu ,  David Thompson

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/04 ,  C23C16/06 ,  C23C16/455

CPC classification number: H01L21/76877 ,  C23C16/045 ,  C23C16/06 ,  C23C16/45536 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76876

Abstract: Methods for forming metal organic tungsten for middle-of-the-line (MOL) applications are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate to a process chamber, wherein the substrate includes a feature formed in a first surface of a dielectric layer of the substrate; exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten barrier layer atop the dielectric layer and within the feature, wherein a temperature of the process chamber during formation of the tungsten barrier layer is less than about 225 degrees Celsius; and depositing a tungsten fill layer over the tungsten barrier layer to fill the feature to the first surface.