公开(公告)号：US06818530B2

公开(公告)日：2004-11-16

申请号：US10420840

申请日：2003-04-23

Applicant: Tatsuya Shimoda ,  Satoshi Inoue ,  Wakao Miyazawa

Inventor： Tatsuya Shimoda ,  Satoshi Inoue ,  Wakao Miyazawa

IPC: H01L2146

CPC classification number: H01L27/1266 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2001/13613 ,  H01L21/6835 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/76259 ,  H01L27/1214 ,  H01L29/78603 ,  H01L2221/68359 ,  H01L2221/68363

Abstract: A transferring method including providing a substrate, forming a transferred layer over the substrate, joining a transfer member to the transferred layer, and removing the transferred layer from the substrate. The transferring method further includes transferring the transferred layer to the transfer member and reusing the substrate for another transfer. The transferring method may also include providing a substrate, forming a separation layer over the substrate, forming a transferred layer over the separation layer, and partly cleaving the separation layer such that a part of the transferred layer is transferred to a transfer member in a given pattern. The transferring method may also include joining a transfer member to the transferred layer, removing the transferred layer from the substrate and transferring the transferred layer to the transfer member, these of which constitute a transfer process, the transfer process being repeatedly performed.

公开(公告)号：US06770936B2

公开(公告)日：2004-08-03

申请号：US09077207

申请日：1998-05-26

Applicant: Satoshi Inoue ,  Ichio Yudasaka

Inventor： Satoshi Inoue ,  Ichio Yudasaka

IPC: H01L2701

CPC classification number: H01L27/124 ,  G02F1/13454 ,  H01L23/3672 ,  H01L29/41725 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a TFT including on the surface side of a substrate a channel region opposed to a gate electrode, with a gate insulating film provided therebetween, and a source-drain region connected to the channel region, and a TFT including a source-drain wiring layer electrically connected to the source-drain region, and a gate wiring layer electrically connected to the gate electrode, at least one component part composed of a conductive film or a semiconductor film, among the component parts of each TFT, is provided with a heat-radiating extension extended from the component part itself for enhancing the heat-radiating efficiency from the component part.

Abstract translation: 在包括在基板的表面侧的TFT中，与栅电极相对的沟道区域，其间设置有栅极绝缘膜的TFT以及与沟道区域连接的源极 - 漏极区域，以及包括源极 - 漏极布线层 电连接到源极 - 漏极区域，以及栅极布线层，电连接到栅极电极，至少一个由导电膜或半导体膜构成的部件，在每个TFT的部件中设置有热 - 从部件本身延伸的辐射延伸部，用于增强部件的散热效率。

公开(公告)号：US06746810B2

公开(公告)日：2004-06-08

申请号：US10105255

申请日：2002-03-26

Applicant: Chiaki Suzuki ,  Masahiro Takagi ,  Atsuhiko Eguchi ,  Satoshi Inoue ,  Sakon Takahashi ,  Masahiro Uchida ,  Rieko Kataoka ,  Hiroyuki Fukuda ,  Fusako Kiyono ,  Eiji Iwasaki

Inventor： Chiaki Suzuki ,  Masahiro Takagi ,  Atsuhiko Eguchi ,  Satoshi Inoue ,  Sakon Takahashi ,  Masahiro Uchida ,  Rieko Kataoka ,  Hiroyuki Fukuda ,  Fusako Kiyono ,  Eiji Iwasaki

IPC: G03G2110

CPC classification number: G03G9/10 ,  G03G9/0827 ,  G03G9/09725 ,  G03G9/1075 ,  G03G9/1132 ,  G03G9/1133 ,  G03G9/1134 ,  G03G9/1135

Abstract: An image formation method which remarkably extends developer life while providing size reduction and high speed coloring. Also, a replenishing toner and a method of producing the same, and a toner cartridge. In the image formation method, conducting image formation by an image formation apparatus having a plurality of xerography units, the developer apparatus of at least one xerography unit has a developer recovering mechanism appropriately replenishing a replenishing toner composed of a toner and a carrier into the developer apparatus and recovering an excess portion of a developer from the equipment. The above-mentioned replenishing toner has a carrier content in the range of 5 to 40% by weight, the above-mentioned carrier is a carrier coated with a resin having a specific composition, and/or the above-mentioned toner is in a specific shape. The replenishing toner may be produced using the above-mentioned recovered developer.

Abstract translation: 一种图像形成方法，其显着延长显影剂寿命，同时提供尺寸减小和高速着色。 此外，补充调色剂及其制造方法以及调色剂盒。 在图像形成方法中，通过具有多个静电复印单元的图像形成装置进行图像形成，至少一个静电复印单元的显影装置具有显影剂回收机构，适当地将由调色剂和载体构成的补充调色剂补充到显影剂中 从设备中回收多余的显影剂。 上述补充调色剂的载体含量在5-40重量％的范围内，上述载体是涂覆有具有特定组成的树脂的载体，和/或上述调色剂是特定的 形状。 可以使用上述回收的显影剂来制造补充调色剂。

公开(公告)号：US06723576B2

公开(公告)日：2004-04-20

申请号：US09896818

申请日：2001-06-29

Applicant: Ryoichi Nozawa ,  Mutsumi Kimura ,  Satoshi Inoue

Inventor： Ryoichi Nozawa ,  Mutsumi Kimura ,  Satoshi Inoue

IPC: H01L2100

CPC classification number: H01L27/3255 ,  H01L24/95 ,  H01L27/3276 ,  H01L51/0004 ,  H01L51/56 ,  H01L2224/95092 ,  H01L2224/95136 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/15155 ,  H01L2924/15165 ,  H01L2924/15153 ,  H01L2924/00

Abstract: An active-matrix type organic EL display which uses transistors with less variation of characteristics (transistors in which active layer is a single crystal semiconductor) is made on a large area of a transparent base board at low cost. Plural unit of fine construction are formed on a silicon wafer in rows. This unit includes a driving element (switching transistor 34, driving transistor 37, capacity 36) of organic EL element (pixel) 35. Unit block 39 is produced by dividing this silicon wafer. This unit block 39 is disposed at a predetermined position of glass base board 52 (display base board). The driving element of each pixel 35 is connected by signal line 31, power supply line 32, scanning line 33, and capacity line 38.

Abstract translation: 在透明基板的大面积上以低成本制造使用特性差的晶体管（有源层为单晶半导体的晶体管）的有源矩阵型有机EL显示器。 在硅晶片上形成多个精细结构的单元。 该单元包括有机EL元件（像素）35的驱动元件（开关晶体管34，驱动晶体管37，电容36）。单元块39通过分割该硅晶片而制造。 该单元块39设置在玻璃基板52（显示基板）的预定位置。 每个像素35的驱动元件通过信号线31，电源线32，扫描线33和电容线38连接。

公开(公告)号：US06700631B1

公开(公告)日：2004-03-02

申请号：US09403319

申请日：1999-10-22

Applicant: Satoshi Inoue ,  Tatsuya Shimoda

Inventor： Satoshi Inoue ,  Tatsuya Shimoda

IPC: G02F1136

CPC classification number: H01L27/1266 ,  G02F2001/13613 ,  H01L21/6835 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66757 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2924/3025 ,  H01L2924/3511

Abstract: A separation layer (120) is provided on a substrate (100), and a thin film device (140) such as TFT is formed thereon. Separation accelerating ions such as hydrogen ions are implanted into the separation layer (120) in the course of the process for forming the thin film device (140). After the formation of the thin film device (140), the thin film device (140) is preferably joined to a transfer material (180) through an adhesive layer (160), and irradiated with laser light from the substrate side. This causes separation in the separation layer (120) by using also the action of the separation accelerating ions. The thin film device (140) is separated from the substrate (100). This permits transfer of a desired thin film device to any substrate.

Abstract translation: 在衬底（100）上设置分离层（120），并且在其上形成诸如TFT的薄膜器件（140）。 在形成薄膜器件（140）的过程中，将分离加速离子（例如氢离子）注入到分离层（120）中。 在形成薄膜器件（140）之后，优选薄膜器件（140）通过粘合剂层（160）与转印材料（180）接合，并从衬底侧照射激光。 这也引起分离层（120）中分离加速离子的作用。 薄膜器件（140）与衬底（100）分离。 这允许将期望的薄膜器件转移到任何衬底。

公开(公告)号：US06696785B2

公开(公告)日：2004-02-24

申请号：US09900520

申请日：2001-07-06

Applicant: Tatsuya Shimoda ,  Satoru Miyashita ,  Satoshi Inoue

Inventor： Tatsuya Shimoda ,  Satoru Miyashita ,  Satoshi Inoue

IPC: H01J162

CPC classification number: H05B33/10 ,  H01L27/3255 ,  H01L51/56 ,  H01L2224/95136 ,  H01L2224/95146 ,  H01L2227/323 ,  H01L2924/15153 ,  H01L2924/15155 ,  H01L2924/15165 ,  H05B33/12

Abstract: An object is to efficiently manufacture an organic EL display which uses microstructures. Microstructures are inlaid in a plurality of concavities in the surface of a nonconductive multi-holed substrate. On the multi-holed substrate, besides the concavities there is formed a plurality of through holes. The surface of the multi-holed substrate is covered with a nonconductive protective film. A transparent substrate on the surface of which is formed beforehand a transparent electrode layer is prepared, and the transparent substrate is attached to the rear face side of the multi-holed substrate. Contact holes are formed after which a luminous layer is formed inside the through holes by an ink jet method. The surface of the multi-holed substrate including the inside of the contact holes is covered with a metallic layer such as aluminum, and the metallic layer is then patterned, and negative electrodes and wiring are formed.

Abstract translation: 目的是有效地制造使用微结构的有机EL显示器。 微结构镶嵌在非导电多孔基板的表面中的多个凹部中。 在多孔基板上，除了凹部之外，还形成有多个通孔。 多孔基板的表面被非导电保护膜覆盖。 准备表面上由透明电极层形成的透明基板，将透明基板安装在多孔基板的背面侧。 形成接触孔，之后通过喷墨法在通孔内部形成发光层。 包括接触孔内部的多孔基板的表面被诸如铝的金属层覆盖，然后对金属层进行图案化，形成负电极和布线。

公开(公告)号：US06600009B2

公开(公告)日：2003-07-29

申请号：US08957414

申请日：1997-10-24

Applicant: Satoshi Inoue ,  Osamu Komiyama

Inventor： Satoshi Inoue ,  Osamu Komiyama

IPC: C08G6502

CPC classification number: C08G75/0254

Abstract: In the preparation of polyarylene sulfide (PAS) by reacting an alkali metal sulfide with a dihaloaromatic compound in an organic amide solvent to obtain a polyarylene sulfide slurry and subjecting the slurry to acid treatment, an acid or hydrogen salt is added to the slurry in such an amount that a pH of the slurry is more than 7.0 and at most 11.0 to carry out the acid treatment. Alternatively, a zinc compound in an amount of 0.1 to 1.5 mole % per mole of the alkali metal sulfide supplied is added to the polyarylene sulfide slurry to treat the slurry, and, then, an acid or hydrogen salt in an amount of at least 0.2 mole % per mole of the alkali metal sulfide supplied is added. The PAS thus obtained has high crystallization speed, high whiteness, high mechanical strength and high melt viscosity, V6.

Abstract translation: 在通过碱金属硫化物与二卤代芳族化合物在有机酰胺溶剂中反应制备聚芳硫醚（PAS）以获得聚芳硫醚浆料并对浆料进行酸处理时，将酸或氢盐加入到浆料中 为了进行酸处理，浆料的pH为7.0以上且11.0以下的量。 或者，将供给的碱金属硫化物的摩尔数为0.1〜1.5摩尔％的锌化合物加入到聚芳硫醚浆料中以处理浆料，然后加入至少0.2重量的酸或氢盐 加入每摩尔供应的碱金属硫化物的摩尔％。由此获得的PAS具有高结晶速度，高白度，高机械强度和高熔体粘度V6。

公开(公告)号：US06521511B1

公开(公告)日：2003-02-18

申请号：US09242923

申请日：1999-02-26

Applicant: Satoshi Inoue ,  Tatsuya Shimoda ,  Wakao Miyazawa

Inventor： Satoshi Inoue ,  Tatsuya Shimoda ,  Wakao Miyazawa

IPC: H01L2130

CPC classification number: H01L27/1266 ,  B23K26/40 ,  B23K26/57 ,  B23K2103/172 ,  G02F1/13454 ,  G02F1/1362 ,  H01L21/2007 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/76283 ,  H01L21/76289 ,  H01L27/1214 ,  H01L29/78603 ,  H01L2221/68359 ,  H01L2221/68368

Abstract: A thin film device fabrication method in which a thin film device formed on a substrate are transferred to a primary destination-of-transfer part and then the thin film device is transferred to a secondary destination-of-transfer part. A first separation layer (120) made of such a material as amorphous silicon is provided on a substrate (100) which allows passage of laser. A thin film device (140) such as TFTs are formed on the substrate (100). Further, a second separation layer (160) such as a hot-melt adhesive layer is formed on the thin film devices (140), and a primary destination-of-transfer part (180) is mounted thereon. The bonding strength of the first separation layer is weakened by irradiation with light, and the substrate (100) is removed. Thus, the thin film device (140) is transferred to the primary destination-of-transfer part. Then, a secondary destination-of-transfer part (200) is attached onto the bottom of an exposed part of the thin film device (140) via an adhesive layer (190). Thereafter, the bonding strength of the second separation layer is weakened by such means as thermal fusion, and the primary destination-of-transfer part is removed. In this manner, the thin film device (140) can be transferred to the secondary destination-of-transfer part (200) while maintaining layering relationship with respect to the substrate (100).

Abstract translation: 一种薄膜器件制造方法，其中形成在衬底上的薄膜器件被转移到第一转移部件，然后将薄膜器件转移到次级转移部件。 由诸如非晶硅的材料制成的第一分离层（120）设置在允许激光通过的基板（100）上。 在基板（100）上形成诸如TFT的薄膜器件（140）。 此外，在薄膜器件（140）上形成诸如热熔粘合剂层的第二分离层（160），并且其上安装有主要转移部件（180）。 通过照射光使第一分离层的结合强度减弱，并除去基板（100）。 因此，薄膜器件（140）被传送到主要转移部件。 然后，经由粘合剂层（190）将次要转移部件（200）附着到薄膜器件（140）的暴露部分的底部。 此后，第二分离层的结合强度通过热熔融的方式被削弱，并且去除了主要转移部分。 以这种方式，薄膜器件（140）可以在保持与衬底（100）的分层关系的同时被转移到次级转移部件（200）。

公开(公告)号：US06483546B1

公开(公告)日：2002-11-19

申请号：US09378065

申请日：1999-08-20

Applicant: Tetsujiro Kondo ,  Yasushi Tatehira ,  Nobuyuki Asakura ,  Masashi Uchida ,  Takuo Morimura ,  Kazutaka Ando ,  Hideo Nakaya ,  Tsutomu Watanabe ,  Satoshi Inoue ,  Wataru Niitsuma

Inventor： Tetsujiro Kondo ,  Yasushi Tatehira ,  Nobuyuki Asakura ,  Masashi Uchida ,  Takuo Morimura ,  Kazutaka Ando ,  Hideo Nakaya ,  Tsutomu Watanabe ,  Satoshi Inoue ,  Wataru Niitsuma

IPC: H04N701

CPC classification number: H04N7/0137 ,  H04N7/012 ,  H04N7/0125 ,  H04N7/0135

Abstract: A picture information converting apparatus for generating an output picture signal with a different scanning line structure from an input picture signal is disclosed, that comprises a first picture data selecting means for selecting adjacent pixels with a predetermined relation of positions to a plurality of considered points with a different relation of positions to scanning lines of the input picture signal, a spatial class detecting means for detecting a pattern of a level distribution from picture data selected by said first picture data selecting means and determining spacial class values that represent spatial classes of the considered points corresponding to the detected pattern, a second picture data selecting means for selecting the considered points and adjacent pixels with the predetermined relation of positions to the considered points from the input picture signal, a calculating process means for performing a calculating process for predicting and generating pixels at positions with a predetermined relation of positions to the considered points corresponding to the picture data obtained by said second picture data selecting means, a storing means for storing predetermined predictive coefficient data used in the calculating process of said calculating process means, and a class value converting means for performing a class value converting process for a first class value with a relation of positions to the considered points and the input picture signal and generating a second class value corresponding to the predictive coefficient data.

Abstract translation: 公开了一种图像信息转换装置，用于从输入图像信号产生具有不同扫描线结构的输出图像信号，该图像信息转换装置包括：第一图像数据选择装置，用于以多个考虑点的预定关系选择相邻像素， 与输入图像信号的扫描线的位置的不同关系;空间等级检测装置，用于从由所述第一图像数据选择装置选择的图像数据检测电平分布的图案，并且确定表示所考虑的空间等级的空间等级值 对应于检测到的图案的点;第二图像数据选择装置，用于从输入图像信号中选择具有与所考虑点的预定关系的考虑点和相邻像素;计算处理装置，用于执行用于预测和生成的计算处理 像素在posi 具有与所述第二图像数据选择装置获得的图像数据相对应的考虑点的预定关系的存储装置，用于存储在所述计算处理装置的计算处理中使用的预定预测系数数据的存储装置和类别值转换 用于对具有与考虑点的位置的关系和输入图像信号执行用于第一类值的类值转换处理的装置，并且生成与预测系数数据相对应的第二类别值。

公开(公告)号：US06372608B1

公开(公告)日：2002-04-16

申请号：US09051966

申请日：1998-04-24

Applicant: Tatsuya Shimoda ,  Satoshi Inoue ,  Wakao Miyazawa

Inventor： Tatsuya Shimoda ,  Satoshi Inoue ,  Wakao Miyazawa

IPC: H01L2130

CPC classification number: H01L27/1266 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2001/13613 ,  H01L21/6835 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/76259 ,  H01L27/1214 ,  H01L29/78603 ,  H01L2221/68359 ,  H01L2221/68363

Abstract: A method for transferring a thin film device on a substrate onto a transfer member, includes a step for forming a separation layer on the substrate, a step for forming a transferred layer including the thin film device on the separation layer, a step for adhering the transferred layer including the thin film device to the transfer member with an adhesive layer therebetween, a step for irradiating the separation layer with light so as to form internal and/or interfacial exfoliation of the separation layer, and a step for detaching the substrate from the separation layer.

Abstract translation: 一种将基板上的薄膜器件转印到转印部件上的方法，包括在基板上形成分离层的步骤，在分离层上形成包括薄膜器件的转印层的步骤， 将包含薄膜器件的转移层粘合到转印部件上，其间具有粘合剂层，用光照射分离层以形成分离层的内部和/或界面剥离的步骤，以及用于将基板从 分离层。