公开(公告)号：US06580633B2

公开(公告)日：2003-06-17

申请号：US09965686

申请日：2001-09-27

申请人： Satoshi Inoue ,  Ichio Yudasaka ,  Piero Migliorato

发明人： Satoshi Inoue ,  Ichio Yudasaka ,  Piero Migliorato

IPC分类号： G11C1122

CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L27/11585 ,  H01L27/1159 ,  H01L27/12 ,  H01L29/78391 ,  H01L29/78645 ,  H01L29/78648

摘要： A semiconductor memory device comprising: an active layer in which are formed a transistor source, channel and drain; a gate for the transistor; a layer of ferroelectric material; and an electrode for applying a voltage to the ferroelectric material; the electrode being spaced apart from the gate, the layer of ferroelectric material having two stable states of internal polarization, and the arrangement being such that the two states of polarization have a detectable difference in effect upon the transfer characteristic of the transistor. The arrangement enables cross-talk between memory cells upon write to be avoided and can mitigate physical interface problems between the ferroelectric material and the active layer.

摘要翻译： 一种半导体存储器件，包括：有源层，其中形成晶体管源极，沟道和漏极; 晶体管的栅极; 一层铁电材料; 和用于向铁电体材料施加电压的电极; 所述电极与所述栅极间隔开，所述铁电材料层具有两个稳定的内部极化状态，并且所述布置使得所述两种极化状态对于所述晶体管的转移特性具有可检测的差异。 该布置能够避免写入时存储单元之间的串扰，并且可以减轻铁电材料和有源层之间的物理接口问题。

公开(公告)号：US06933571B2

公开(公告)日：2005-08-23

申请号：US10757452

申请日：2004-01-15

申请人： Satoshi Inoue ,  Ichio Yudasaka

发明人： Satoshi Inoue ,  Ichio Yudasaka

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/77 ,  H01L21/84 ,  H01L23/367 ,  H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L27/01

CPC分类号： H01L27/124 ,  G02F1/13454 ,  H01L23/3672 ,  H01L29/41725 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a TFT including on the surface side of a substrate a channel region opposed to a gate electrode, with a gate insulating film provided therebetween, and a source-drain region connected to the channel region, and a TFT including a source-drain wiring layer electrically connected to the source-drain region, and a gate wiring layer electrically connected to the gate electrode, at least one component part composed of a conductive film or a semiconductor film, among the component parts of each TFT, is provided with a heat-radiating extension extended from the component part itself for enhancing the heat-radiating efficiency from the component part.

摘要翻译： 在包括在基板的表面侧的TFT中，与栅电极相对的沟道区域，其间设置有栅极绝缘膜的TFT以及与沟道区域连接的源极 - 漏极区域，以及包括源极 - 漏极布线层 电连接到源极 - 漏极区域，以及栅极布线层，电连接到栅极电极，至少一个由导电膜或半导体膜构成的部件，在每个TFT的部件中设置有热 - 从部件本身延伸的辐射延伸部，用于增强部件的散热效率。

公开(公告)号：US06770936B2

公开(公告)日：2004-08-03

申请号：US09077207

申请日：1998-05-26

申请人： Satoshi Inoue ,  Ichio Yudasaka

发明人： Satoshi Inoue ,  Ichio Yudasaka

IPC分类号： H01L2701

CPC分类号： H01L27/124 ,  G02F1/13454 ,  H01L23/3672 ,  H01L29/41725 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a TFT including on the surface side of a substrate a channel region opposed to a gate electrode, with a gate insulating film provided therebetween, and a source-drain region connected to the channel region, and a TFT including a source-drain wiring layer electrically connected to the source-drain region, and a gate wiring layer electrically connected to the gate electrode, at least one component part composed of a conductive film or a semiconductor film, among the component parts of each TFT, is provided with a heat-radiating extension extended from the component part itself for enhancing the heat-radiating efficiency from the component part.

摘要翻译： 在包括在基板的表面侧的TFT中，与栅电极相对的沟道区域，其间设置有栅极绝缘膜的TFT以及与沟道区域连接的源极 - 漏极区域，以及包括源极 - 漏极布线层 电连接到源极 - 漏极区域，以及栅极布线层，电连接到栅极电极，至少一个由导电膜或半导体膜构成的部件，在每个TFT的部件中设置有热 - 从部件本身延伸的辐射延伸部，用于增强部件的散热效率。

公开(公告)号：US09580791B2

公开(公告)日：2017-02-28

申请号：US13697164

申请日：2011-04-26

申请人： Satoshi Inoue ,  Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda

发明人： Satoshi Inoue ,  Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda

IPC分类号： C23C16/04 ,  H05B33/10 ,  C23C14/04 ,  B05C21/00 ,  H01L51/00 ,  H01L51/50

CPC分类号： C23C14/042 ,  B05C21/005 ,  H01L51/0011 ,  H01L51/50

摘要： A vapor deposition mask (70) includes a first layer (71), a second layer (72) and a third layer (73) in this order. A plurality of first openings (71h), a plurality of second openings (72h) and a plurality of third openings (73h) are formed respectively in the first layer, the second layer and the third layer. The first openings, the second openings and the third openings communicate with each other, thereby constituting mask openings (75). The opening dimension of the second openings is larger than the opening dimension of the first openings and is larger than the opening dimension of the third openings. With this configuration, it is possible to prevent reduction of the opening dimension of the mask openings or clogging of the mask openings due to the vapor deposition particles adhering to the mask openings.

摘要翻译： 蒸镀掩模（70）依次包括第一层（71），第二层（72）和第三层（73）。 多个第一开口（71h），多个第二开口（72h）和多个第三开口（73h）分别形成在第一层，第二层和第三层中。 第一开口，第二开口和第三开口彼此连通，从而构成掩模开口（75）。 第二开口的开口尺寸大于第一开口的开口尺寸，并且大于第三开口的开口尺寸。 利用这种构造，可以防止由于气相沉积颗粒粘附到掩模开口而导致的掩模开口的开口尺寸的减小或掩模开口的堵塞。

公开(公告)号：US09391275B2

公开(公告)日：2016-07-12

申请号：US13703873

申请日：2011-08-17

申请人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

发明人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

IPC分类号： C23C16/00 ,  H01L51/00 ,  C23C14/04 ,  H01L27/32 ,  H01L51/56

CPC分类号： H01L51/0008 ,  C23C14/042 ,  H01L27/3211 ,  H01L27/3244 ,  H01L51/0011 ,  H01L51/56

摘要： A vapor deposition source (60), a plurality of control plates (80) and a vapor deposition mask (70) are disposed in this order. A substrate (10) is moved relative to the vapor deposition mask in a state in which the substrate and the vapor deposition mask are spaced apart at a fixed interval. Vapor deposition particles (91) discharged from a vapor deposition source opening (61) of the vapor deposition source pass through neighboring inter-control plate spaces (81) and mask openings (71) formed in the vapor deposition mask, and then adhere to the substrate to form a coating film (90). At least a part of the coating film is formed by the vapor deposition particles that have passed through two or more different inter-control plate spaces. It is thereby possible to form a coating film in which edge blur and variations in the thickness are suppressed.

摘要翻译： 蒸镀源（60），多个控制板（80）和蒸镀掩模（70）依次配置。 在基板和气相沉积掩模以固定间隔间隔开的状态下，基板（10）相对于气相沉积掩模移动。 从气相沉积源的气相沉积源开口（61）排出的气相沉积颗粒（91）通过相邻的控制板间隙（81）和形成在气相沉积掩模中的掩模开口（71），然后粘附到 基板以形成涂膜（90）。 涂膜的至少一部分由已经通过两个或更多个不同的控制间隙的气相沉积颗粒形成。 由此，可以形成抑制边缘模糊和厚度变化的涂膜。

公开(公告)号：US08845808B2

公开(公告)日：2014-09-30

申请号：US13997173

申请日：2011-12-19

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC分类号： C23C14/26 ,  C23C16/448 ,  H05B33/10 ,  C23C14/24 ,  H01L21/02 ,  H01L51/00 ,  H01L51/56

CPC分类号： C23C16/45578 ,  C23C14/24 ,  C23C14/243 ,  H01L21/02263 ,  H01L51/001 ,  H01L51/56 ,  H05B33/10

摘要： A vapor deposition device (50) in accordance with the present invention is a vapor deposition device for forming a film on a film formation substrate (60), the vapor deposition device including a vapor deposition source (80) that has an injection hole (81) from which vapor deposition particles are injected, a vapor deposition particle crucible (82) for supplying the vapor deposition particles to the vapor deposition source (80), and a rotation motor (86) for changing a distribution of the injection amount of the vapor deposition particles by rotating the vapor deposition source (80).

摘要翻译： 根据本发明的蒸镀装置（50）是在成膜基板（60）上形成膜的蒸镀装置，其特征在于，所述蒸镀装置具有：蒸镀源（80），具有喷射孔 ），用于将气相沉积粒子供给到气相沉积源（80）的气相沉积粒子坩埚（82）和用于改变蒸汽喷射量分布的旋转马达（86） 通过旋转气相沉积源（80）来沉积颗粒。

公开(公告)号：US08673082B2

公开(公告)日：2014-03-18

申请号：US13980875

申请日：2012-01-13

申请人： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

发明人： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

IPC分类号： C23C16/00

CPC分类号： C23C16/448 ,  C23C14/243 ,  C23C16/042 ,  G03B37/06 ,  H01L51/0008

摘要： A crucible (50) of the present invention includes: an opening (55a) from which vapor deposition particles are injected toward a film formation substrate on which a film is to be formed; a focal point member (54a), provided so as to face the opening (55a), which reflects vapor deposition particles injected from the opening (55a); and a revolution paraboloid (55b) which reflects, toward the film formation substrate, vapor deposition particles which have been reflected by the focal point member (54a).

摘要翻译： 本发明的坩埚（50）包括：朝向要在其上形成膜的成膜基板上注入蒸镀颗粒的开口（55a） 设置成面对开口（55a）的焦点部件（54a），其反射从开口（55a）喷射的气相沉积粒子; 以及向所述成膜基板反射已被所述焦点部件（54a）反射的气相沉积粒子的旋转抛物面（55b）。

公开(公告)号：US20140014036A1

公开(公告)日：2014-01-16

申请号：US14007956

申请日：2012-03-23

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC分类号： H01L21/02 ,  B65D85/00

摘要： A vapor deposition particle emitting device of the present invention includes: a nozzle section (110) having emission holes (111) from which gaseous vapor deposition particles are emitted out; a heating plate unit (100), provided in the nozzle section (110), which is made up of heating plates (101) each having a surface on which a vapor deposition material remains as a result of adherence of vapor deposition particles to the surface; and a heating device (160) for heating the vapor deposition material, which is thus remaining on the surface of each of the heating plates (101), so that a temperature of the vapor deposition material is not less than a temperature at which to become transformed into gaseous form.

摘要翻译： 本发明的气相沉积粒子发射装置包括：喷嘴部分（110），其具有从其中排出气态气相沉积颗粒的发射孔（111）; 设置在所述喷嘴部分（110）中的加热板单元（100），所述加热板单元由加热板（101）组成，所述加热板具有由于气相沉积颗粒粘附到所述表面而具有气相沉积材料的表面的表面 ; 以及用于加热蒸镀材料的加热装置（160），其被保持在每个加热板（101）的表面上，使得蒸镀材料的温度不低于成为 转化成气态。

公开(公告)号：US08628620B2

公开(公告)日：2014-01-14

申请号：US13977645

申请日：2011-12-28

申请人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

发明人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

IPC分类号： C23C16/04 ,  C23C16/00 ,  C23C14/24 ,  C23C14/22 ,  C23C14/00

CPC分类号： H01L21/02263 ,  C23C14/042 ,  C23C14/12 ,  C23C14/562 ,  H01L21/67017 ,  H01L51/0008 ,  H01L51/56

摘要： A vapor deposition device (50) includes a mask (60) having periodic patterns, and only a region of the mask (60) where a one-period pattern is formed is exposed. A length of the mask base material along a direction perpendicular to a long-side direction of the mask base material is shorter than a length of a film formation substrate (200) along a direction of scanning of the film formation substrate (200). The mask (60) is provided so that the long-side direction of the mask base material is perpendicular to the direction of scanning and that the exposed region is allowed to move in a direction perpendicular to the direction of scanning by rotation of a wind-off roll (91) and a wind-up roll (92).

摘要翻译： 气相沉积装置（50）包括具有周期性图案的掩模（60），并且仅露出形成有一个周期图案的掩模（60）的区域。 掩模基材沿着与掩模基材的长边方向垂直的方向的长度比成膜基板（200）沿着成膜基板（200）的扫描方向的长度短。 掩模（60）设置成使得掩模基材的长边方向垂直于扫描方向，并且允许暴露区域沿着与扫描方向垂直的方向移动， 卷筒（91）和卷绕辊（92）。

公开(公告)号：US20130319331A1

公开(公告)日：2013-12-05

申请号：US13985854

申请日：2012-03-08

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC分类号： H01L51/56

CPC分类号： H01L51/56 ,  C23C14/243 ,  C23C14/26 ,  C23C14/542 ,  C23C14/562 ,  H01L51/0008

摘要： A vapor deposition particle injection device (501) of the present invention includes: vapor deposition particle generating sections (110) and (120) for generating vapor deposition particles in the form of vapor by heating vapor deposition materials (114) and (124); and a nozzle section (170) which (i) is connected to the vapor deposition particle generating sections (110) and (120) and (ii) has an injection hole (171) from which the vapor deposition particles generated by the vapor deposition particle generating sections (110) and (120) are injected outward. The vapor deposition particle generating section (120) has a smaller capacity for the vapor deposition material than the vapor deposition particle generating section (110).

摘要翻译： 本发明的气相沉积粒子注入装置（501）包括：通过加热气相沉积材料（114）和（124）产生汽相形式的气相沉积颗粒的气相沉积颗粒产生部分（110）和（120） 和（i）连接到气相沉积颗粒产生部分（110）和（120）的喷嘴部分（170）和（ii）具有喷射孔（171），由气相沉积颗粒产生的气相沉积颗粒 产生部分（110）和（120）向外注入。 气相沉积粒子产生部分（120）具有比气相沉积粒子产生部分（110）更小的气相沉积材料的能力。