公开(公告)号：US06333598B1

公开(公告)日：2001-12-25

申请号：US09478899

申请日：2000-01-07

Applicant: David S. Y. Hsu ,  Henry F. Gray

Inventor： David S. Y. Hsu ,  Henry F. Gray

IPC: H01J162

CPC classification number: B82Y10/00 ,  B82Y30/00 ,  H01J1/3046 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2201/319

Abstract: A field emitter cell includes a thin-film-edge emitter normal to the gate layer. The field emitter cell may include a conductive substrate layer, an insulator layer having a perforation, a gate layer having a perforation, an emitter layer, and other optional layers. The perforation in the gate layer is larger and concentrically offset with respect to the perforation in the insulating layer and may be of a tapered construction. Alternatively, the perforation in the gate layer may be coincident with, or larger or smaller than, the perforation in the insulating layer, provided that the gate layer is shielded from the emitter from a direct line-of-sight by a nonconducting standoff layer. Optionally, the thin-film-edge emitter may include incorporated nanofilaments. The field emitter cell has low gate current, making it useful for various applications such as field emitter displays, high voltage power switching, microwave, RF amplification and other applications that require high emission currents.

Abstract translation: 场发射极单元包括垂直于栅极层的薄膜边缘发射极。 场致发射单元可以包括导电基底层，具有穿孔的绝缘体层，具有穿孔的栅极层，发射极层和其它可选层。 栅极层中的穿孔相对于绝缘层中的穿孔更大并且同心地偏移，并且可以是锥形结构。 或者，栅极层中的穿孔可以与绝缘层中的穿孔重合或更大或更小，只要栅极层通过非导电间隔层从发射器与直接视线屏蔽。 任选地，薄膜边缘发射器可以包括并入的纳米丝。 场致发射单元具有低栅极电流，使其适用于需要高发射电流的场发射显示器，高压功率开关，微波，RF放大等应用。

公开(公告)号：US6087193A

公开(公告)日：2000-07-11

申请号：US241976

申请日：1994-05-12

Applicant: Henry F. Gray

Inventor： Henry F. Gray

IPC: H01J3/02 ,  H01J7/44 ,  H01J9/02 ,  H01J21/10 ,  H01L21/00

CPC classification number: H01J3/022 ,  H01J21/105 ,  H01J7/44 ,  H01J9/025 ,  H01J2201/319

Abstract: A non-power generating current limiting device such as a field effect transistor is provided to output a regulated current in dependence upon a control voltage. An electron field emitter is connected to a drain or output of the non-power generating current limiting device to receive the regulated current. A tip of the electron field emitter emits electrons towards a collector anode. An extractor gate can be provided between the electron field emitter and the collector anode to control the rate of electron emission from the electron field emitter. Because the non-power generating current limiting device regulates the current to the electron field emitter, a maximum current output of the electron field emitter is limited to the regulated current from the voltage controlled current source. The electron field emitter is thus protected from destruction due to excess current. The non-power generating current limiting device can also be used to modulate electron emission from the field emitter.

Abstract translation: 提供诸如场效应晶体管的非发电电流限制装置以根据控制电压输出调节电流。 电子场发射器连接到非发电限流装置的漏极或输出端，以接收调节电流。 电子场发射器的尖端向集电极发射电子。 可以在电子场发射器和集电极之间提供提取器栅极，以控制来自电子场发射体的电子发射速率。 由于非发电电流限制装置调节到电场发射极的电流，所以电子发射极的最大电流输出被限制为来自压控电流源的调节电流。 因此，电子场发射体由于过电流而被保护免受破坏。 非发电电流限制装置也可用于调制来自场致发射体的电子发射。

公开(公告)号：US6074887A

公开(公告)日：2000-06-13

申请号：US937527

申请日：1997-09-27

Applicant: Jong Duk Lee ,  Donghwan Kim

Inventor： Jong Duk Lee ,  Donghwan Kim

IPC: H01J1/30 ,  H01J9/02 ,  H01L27/06 ,  H01L21/00

CPC classification number: H01J9/025 ,  H01L27/0617 ,  H01J2201/319

Abstract: The present invention is directed to fabricating a MOSFET-controlled FEA, in which the emitter array and the cathode electrode are separated and connected to each other by a MOSFET, the cathode electrode and the n-well beneath the emitter array thereby being used as a source and a drain of the MOSFET.

Abstract translation: 本发明涉及制造MOSFET控制的FEA，其中发射极阵列和阴极电极通过MOSFET分离并彼此连接，阴极电极和发射极阵列下方的n阱被用作 MOSFET的源极和漏极。

公开(公告)号：US6031322A

公开(公告)日：2000-02-29

申请号：US878766

申请日：1997-06-19

Applicant: Hisashi Takemura ,  Masayuki Yoshiki

Inventor： Hisashi Takemura ,  Masayuki Yoshiki

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/30

CPC classification number: H01J9/025 ,  H01J2201/319

Abstract: A field emission cold cathode has a plurality of emitters in a group for each gate electrode and a serial resistance layer divided into a plurality resistance layer sections each corresponding to one of the emitters. The resistance layer is divided by a deep trench filled with an insulator layer or conductive layer forming a P-N junction between the same and the resistance layer section. A linear voltage-current characteristic is obtained by a stable resistance of the resistance layer section to prevent a short-circuit failure between the emitter and the gate electrode.

Abstract translation: 场致发射冷阴极具有用于每个栅电极的组中的多个发射体和被分成多个电阻层部分的串联电阻层，每个电阻层部分对应于一个发射极。 电阻层被填充有绝缘体层的深沟槽或在其之间形成P-N结的导电层和电阻层部分分开。 通过电阻层部分的稳定电阻来获得线性电压 - 电流特性，以防止发射极和栅电极之间的短路故障。

公开(公告)号：US6013986A

公开(公告)日：2000-01-11

申请号：US884702

申请日：1997-06-30

Applicant: N. Johan Knall ,  Duane A. Haven ,  Swayambu Ramani

Inventor： N. Johan Knall ,  Duane A. Haven ,  Swayambu Ramani

IPC: H01J9/02 ,  H01J1/304 ,  H01J3/02 ,  H01J29/04 ,  H01J31/12 ,  H01J63/04

CPC classification number: H01J3/022 ,  H01J2201/319 ,  H01J2329/00

Abstract: An electron-emitting device employs a multi-layer resistor (46). A lower layer (48) of the resistor overlies an emitter electrode (42). A set of electron-emissive elements (54) overlie an upper layer (50) of the resistor. Each resistive layer extends continuously from a location below each electron-emissive element to a location below each other electron-emissive element. The two resistive layers are of different chemical composition. The upper resistive layer is typically formed with cermet. The lower resistive layer is typically formed with a silicon-carbon compound.

Abstract translation: 电子发射器件采用多层电阻（46）。 电阻器的下层（48）覆盖发射电极（42）。 一组电子发射元件（54）覆盖电阻器的上层（50）。 每个电阻层从每个电子发射元件下方的位置连续延伸到彼此电子发射元件下方的位置。 两个电阻层的化学成分不同。 上电阻层通常由金属陶瓷形成。 下电阻层通常由硅 - 碳化合物形成。

公开(公告)号：US6011356A

公开(公告)日：2000-01-04

申请号：US70398

申请日：1998-04-30

Applicant: John L. Janning ,  Robert L. Clark

Inventor： John L. Janning ,  Robert L. Clark

IPC: H01J1/308 ,  H01J1/30

CPC classification number: H01J1/308 ,  H01J2201/319 ,  H01J2329/00

Abstract: For use in cathodoluminescent field emission display devices, a cathode emitter can comprise an inverted field effect transistor having a diamond film or other low effective work function material deposited onto the channel layer of the transistor, such that the diamond film provides a source of primary electron emissions. A variable voltage source is applied to the gate of the transistor creating an electric field that controls the conductivity of the channel layer, thereby activating or deactivating electron emissions from this cathode emitter structure. In addition, electron blocking junctions can be incorporated into the emitter structure to inhibit current flow through the device during a deactivated state. In a variation, the transistor of the cathode emitter has the diamond film being deposited onto an electrically conductive pad that is electrically connected to, and extending outwardly from, the transistor. Alternatively, a sideways laterally gated transistor structure can be used with the emitter surface being applied to the transistor's drain. A near mono-molecular oxide film of high secondary electron emission material can also be included on the emitter surface for enhanced electron emissions.

Abstract translation: 为了用于阴极发光场发射显示装置，阴极发射器可以包括具有沉积在晶体管的沟道层上的金刚石膜或其它低有效功函数材料的反向场效应晶体管，使得金刚石膜提供初级电子源 排放。 可变电压源被施加到晶体管的栅极，产生控制沟道层的导电性的电场，从而激活或去激活来自该阴极发射极结构的电子发射。 此外，电子阻挡接头可以结合到发射极结构中，以在去激活状态期间阻止电流流过器件。 在一个变型中，阴极发射器的晶体管具有金刚石膜，该金刚石膜被沉积到与晶体管电连接并从晶体管向外延伸的导电焊盘上。 或者，可以使用侧向横向门控晶体管结构，其中发射极表面被施加到晶体管的漏极。 高二次电子发射材料的近单分子氧化膜也可以包括在发射体表面上以增强电子发射。

公开(公告)号：US6011291A

公开(公告)日：2000-01-04

申请号：US803933

申请日：1997-02-21

Applicant: Stephen D. Russell ,  Randy L. Shimabukuro

Inventor： Stephen D. Russell ,  Randy L. Shimabukuro

IPC: H01J9/02 ,  H01J31/12 ,  H01L27/01 ,  H01J1/02 ,  H01J9/00 ,  H01J23/16

CPC classification number: H01J9/025 ,  H01J31/127 ,  H01J2201/319

Abstract: A video display with integrated control circuitry formed on a single dielectric substrate, includes a dielectric substrate; emitter cathodes formed on the dielectric substrate for emitting electrons; a window plate mounted a fixed distance from the substrate to define a vacuum chamber therebetween; phosphors mounted to the window plate which generate light when irradiated with the electrons; and field effect transistors mounted to the substrate which are electrically interconnected to the emitter cathodes for selectively controlling light emissions from the phosphors.

Abstract translation: 具有集成控制电路的视频显示器，其形成在单个电介质基板上，包括电介质基板; 在电介质基板上形成的用于发射电子的发射极阴极; 安装在距基板一定距离的窗板，以在其间限定真空室; 安装在窗口板上的荧光体，其在用电子照射时产生光; 以及安装到衬底的场效应晶体管，其与发射极阴极电互连，用于选择性地控制来自磷光体的光发射。

公开(公告)号：US5973444A

公开(公告)日：1999-10-26

申请号：US191269

申请日：1998-11-12

Applicant: Xueping Xu ,  Charles P. Beetz ,  George R. Brandes ,  Robert W. Boerstler ,  John W. Steinbeck

Inventor： Xueping Xu ,  Charles P. Beetz ,  George R. Brandes ,  Robert W. Boerstler ,  John W. Steinbeck

IPC: H01J1/304 ,  H01J1/30

CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J2201/30469 ,  H01J2201/319 ,  Y10S977/939

Abstract: Electron field emission devices (cold cathodes), vacuum microelectronic devices and field emission displays which incorporate cold cathodes and methods of making and using same. More specifically, cold cathode devices comprising electron emitting structures grown directly onto a substrate material. The invention also relates to patterned precursor substrates for use in fabricating field emission devices and methods of making same and also to catalytically growing other electronic structures, such as films, cones, cylinders, pyramids or the like, directly onto substrates.

公开(公告)号：US5910704A

公开(公告)日：1999-06-08

申请号：US723125

申请日：1996-09-30

Applicant: Dae-ho Choo

Inventor： Dae-ho Choo

IPC: H01J9/02 ,  H01J3/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/62 ,  H01J63/04

CPC classification number: H01J29/467 ,  H01J3/022 ,  H01J31/127 ,  H01J2201/319

Abstract: A field emission display includes a substrate with a plurality of cathode layers provided thereon. A plurality of micro tips are provided on each of the cathode layers. A plurality of gate insulating layers are also provided on the cathode layers, each of the gate insulating layers having a plurality of holes for accommodating each unit of the micro tips. A plurality of gate electrodes are provided on the gate insulating layers, each of the gate electrodes having a plurality of holes corresponding to each hole of the plurality of gate insulating layers, each of the plurality of gate insulating layers and each of the plurality of gate electrodes being alternately provided on each other.

Abstract translation: 场发射显示器包括其上设置有多个阴极层的衬底。 在每个阴极层上提供多个微尖端。 多个栅极绝缘层也设置在阴极层上，每个栅极绝缘层具有多个孔，用于容纳微单元的每个单元。 在栅极绝缘层上设置多个栅电极，每个栅电极具有与多个栅极绝缘层的每个孔对应的多个孔，多个栅绝缘层和多个栅极中的每一个 交替地设置电极。

公开(公告)号：US5851669A

公开(公告)日：1998-12-22

申请号：US446392

申请日：1995-05-22

Applicant: John M. Macaulay ,  Peter C. Searson ,  Robert M. Duboc, Jr. ,  Christopher J. Spindt

Inventor： John M. Macaulay ,  Peter C. Searson ,  Robert M. Duboc, Jr. ,  Christopher J. Spindt

IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  D02C3/00

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319 ,  Y10T428/2973 ,  Y10T428/298

Abstract: A field-emission structure suitable for large-area flat-panel televisions centers around an insulating porous layer that overlies a lower conductive region situated over insulating material of a supporting substrate. Electron-emissive filaments occupy pores extending through the porous layer. A conductive gate layer through which openings extend at locations centered on the filaments typically overlies the porous layer. Cavities are usually provided in the porous layer along its upper surface at locations likewise centered on the filaments.

Abstract translation: 适用于大面积平板电视的场致发射结构围绕位于位于支撑衬底的绝缘材料上的下导电区域的绝缘多孔层的周围。 电子发射细丝占据贯穿多孔层的孔。 导电栅极层，通过该导电栅极层在多孔层上覆盖位于中心的位置处的开口延伸。 通常在多孔层中沿其上表面设置同样以细丝为中心的位置。