公开(公告)号：US20210335724A1

公开(公告)日：2021-10-28

申请号：US17369654

申请日：2021-07-07

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh Kim ,  KyoungHee Park ,  KyoWang Koo ,  SungWon Cho

IPC: H01L23/552 ,  H01L23/31 ,  H01L23/04 ,  H01L25/065 ,  H01L21/78 ,  H01L25/00 ,  H01L21/56

Abstract: A semiconductor device has a substrate. A lid is disposed over the substrate. An encapsulant is deposited over the substrate. A film mask is disposed over the encapsulant with the lid exposed from the film mask and encapsulant. A conductive layer is formed over the film mask, encapsulant, and lid. The film mask is removed after forming the conductive layer.

公开(公告)号：US20210305168A1

公开(公告)日：2021-09-30

申请号：US17032576

申请日：2020-09-25

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： WoonJae Beak ,  MinSu Kim ,  HeeSoo Lee

IPC: H01L23/532 ,  H01L23/31 ,  H01L21/768

Abstract: A semiconductor device has a substrate and a first conductive layer formed over the substrate. A second conductive layer is formed over the first conductive layer. The first conductive layer can be copper, and the second conductive layer can be nickel. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. A flux material is deposited over the second conductive layer by a printing process. An electrical component is disposed over the flux material, and the flux material is reflowed to make electrical connection between the electrical component and second conductive layer. The flux material substantially vaporizes during the reflow to reduce the occurrence of short circuits. The electrical components can be placed over the substrate with narrow spacing and higher density given the use of the flux material to make electrical connection. An encapsulant is deposited over the electrical component.

公开(公告)号：US20210296268A1

公开(公告)日：2021-09-23

申请号：US17068233

申请日：2020-10-12

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Wagno Alves Braganca, JR. ,  KyungOe Kim ,  TaeKeun Lee

IPC: H01L23/00 ,  H05K3/34 ,  B23K1/005

Abstract: A method of making a semiconductor device involves the steps of disposing a first semiconductor die over a substrate and disposing a beam homogenizer over the first semiconductor die. A beam from the beam homogenizer impacts the first semiconductor die. The method further includes the steps of determining a positional offset of the beam relative to the first semiconductor die in a number of pixels, using a first calibration equation to convert the number of pixels into a distance in millimeters, and moving the beam homogenizer the distance in millimeters to align the beam and first semiconductor die.

公开(公告)号：US10937741B2

公开(公告)日：2021-03-02

申请号：US16193691

申请日：2018-11-16

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  HunTeak Lee ,  HeeSoo Lee ,  Wanil Lee ,  SangDuk Lee

IPC: H01L23/552 ,  H01L23/31 ,  H01L21/56 ,  H01L23/66

Abstract: A semiconductor device has a substrate comprising a carrier and an interposer disposed on the carrier. An electrical component is disposed over a first surface of the interposer. An interconnect structure is disposed over the first surface of the interposer. An encapsulant is deposited over the electrical component, interconnect structure, and substrate. A trench is formed through the encapsulant and interposer into the carrier. A shielding layer is formed over the encapsulant and into the trench. The carrier is removed after forming the shielding layer.

公开(公告)号：US10910322B2

公开(公告)日：2021-02-02

申请号：US16220934

申请日：2018-12-14

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh Kim ,  KyoWang Koo ,  SungWon Cho ,  BongWoo Choi ,  JiWon Lee

IPC: H01L21/00 ,  H01L23/552 ,  H01L21/311 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00 ,  H01L23/66

Abstract: A semiconductor device has a substrate. An electrical component is disposed over a surface of the substrate. An encapsulant is deposited over the electrical component and substrate. A portion of the surface of the substrate remains exposed from the encapsulant. A shielding layer is formed over the encapsulant. A portion of the shielding layer is removed to expose the portion of the surface of the substrate.

公开(公告)号：US20200373289A1

公开(公告)日：2020-11-26

申请号：US16990887

申请日：2020-08-11

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  OhHan Kim ,  HeeSoo Lee ,  HunTeak Lee ,  InSang Yoon ,  Il Kwon Shim

IPC: H01L25/00 ,  H01L23/00 ,  H01L21/56 ,  H01L23/552 ,  H01L25/065 ,  H01L25/16

Abstract: A semiconductor device has a first substrate and a second substrate. An opening is formed through the second substrate. A first semiconductor component and second semiconductor component are disposed between the first substrate and second substrate. The second substrate is electrically coupled to the first substrate through the first semiconductor component. A first terminal of the first semiconductor component is electrically coupled to the first substrate. A second terminal of the first semiconductor component is electrically coupled to the second substrate. The second semiconductor component extends into the opening. An encapsulant is deposited over the first substrate and second substrate.

公开(公告)号：US20200335358A1

公开(公告)日：2020-10-22

申请号：US16918643

申请日：2020-07-01

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Yaojian Lin ,  Xu Sheng Bao ,  Kang Chen

IPC: H01L21/48 ,  H01L23/00 ,  H01L23/498 ,  H01L23/538

Abstract: A semiconductor device has a first conductive layer and a semiconductor die disposed adjacent to the first conductive layer. An encapsulant is deposited over the first conductive layer and semiconductor die. An insulating layer is formed over the encapsulant, semiconductor die, and first conductive layer. A second conductive layer is formed over the insulating layer. A first portion of the first conductive layer is electrically connected to VSS and forms a ground plane. A second portion of the first conductive layer is electrically connected to VDD and forms a power plane. The first conductive layer, insulating layer, and second conductive layer constitute a decoupling capacitor. A microstrip line including a trace of the second conductive layer is formed over the insulating layer and first conductive layer. The first conductive layer is provided on an embedded dummy die, interconnect unit, or modular PCB unit.

公开(公告)号：US20200286835A1

公开(公告)日：2020-09-10

申请号：US16880173

申请日：2020-05-21

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  Woonjae Beak ,  YiSu Park ,  OhHan Kim ,  HunTeak Lee ,  HeeSoo Lee

IPC: H01L23/538 ,  H01L23/31 ,  H01L23/552 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L21/683

Abstract: A semiconductor device has a substrate with a first opening and second opening formed in the substrate. A first semiconductor component is disposed on the substrate. The substrate is disposed on a carrier. A second semiconductor component is disposed on the carrier in the first opening of the substrate. A third semiconductor component is disposed in the second opening. The third semiconductor component is a semiconductor package in some embodiments. A first shielding layer may be formed over the semiconductor package. An encapsulant is deposited over the substrate, first semiconductor component, and second semiconductor component. A shielding layer may be formed over the encapsulant.

公开(公告)号：US20200279827A1

公开(公告)日：2020-09-03

申请号：US16878345

申请日：2020-05-19

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Rajendra D. Pendse

IPC: H01L23/00 ,  H01L23/498 ,  H01L21/56 ,  H01L25/03 ,  H01L25/065 ,  H01L25/00 ,  H01L21/768

Abstract: A semiconductor device has a plurality of first semiconductor die with an encapsulant deposited over a first surface of the first semiconductor die and around the first semiconductor die. An insulating layer is formed over the encapsulant and over a second surface of the first semiconductor die opposite the first surface. The insulating layer includes openings over the first semiconductor die. A first conductive layer is formed over the first semiconductor die within the openings. A second conductive layer is formed over the first conductive layer to form vertical conductive vias. A second semiconductor die is disposed over the first semiconductor die and electrically connected to the first conductive layer. A bump is formed over the second conductive layer outside a footprint of the first semiconductor die. The second semiconductor die is disposed over an active surface or a back surface of the first semiconductor die.

公开(公告)号：US10700011B2

公开(公告)日：2020-06-30

申请号：US15807833

申请日：2017-11-09

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  Woonjae Beak ,  YiSu Park ,  OhHan Kim ,  HunTeak Lee ,  HeeSoo Lee

IPC: H01L23/538 ,  H01L23/31 ,  H01L23/552 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L25/16 ,  H01L23/498

Abstract: A semiconductor device has a substrate with a first opening and second opening formed in the substrate. A first semiconductor component is disposed on the substrate. The substrate is disposed on a carrier. A second semiconductor component is disposed on the carrier in the first opening of the substrate. A third semiconductor component is disposed in the second opening. The third semiconductor component is a semiconductor package in some embodiments. A first shielding layer may be formed over the semiconductor package. An encapsulant is deposited over the substrate, first semiconductor component, and second semiconductor component. A shielding layer may be formed over the encapsulant.