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    Transistor device having asymmetric embedded strain elements and related manufacturing method
    182.
    发明授权
    Transistor device having asymmetric embedded strain elements and related manufacturing method 有权
    具有不对称嵌入式应变元件的晶体管器件及相关制造方法

    公开(公告)号：US08148750B2

    公开(公告)日：2012-04-03

    申请号：US13052969

    申请日：2011-03-21

    Applicant: Rohit Pal ,  Frank Bin Yang ,  Michael J. Hargrove

    Inventor： Rohit Pal ,  Frank Bin Yang ,  Michael J. Hargrove

    IPC: H01L21/02

    CPC classification number: H01L29/66636 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/3065 ,  H01L29/165 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7848

    Abstract: Semiconductor transistor devices and related fabrication methods are provided. An exemplary transistor device includes a layer of semiconductor material having a channel region defined therein and a gate structure overlying the channel region. Recesses are formed in the layer of semiconductor material adjacent to the channel region, such that the recesses extend asymmetrically toward the channel region. The transistor device also includes stress-inducing semiconductor material formed in the recesses. The asymmetric profile of the stress-inducing semiconductor material enhances carrier mobility in a manner that does not exacerbate the short channel effect.

    Abstract translation: 提供半导体晶体管器件及相关制造方法。 示例性晶体管器件包括其中限定有沟道区的半导体材料层和覆盖沟道区的栅极结构。 凹槽在与沟道区相邻的半导体材料层中形成，使得凹槽朝向沟道区不对称地延伸。 晶体管器件还包括形成在凹槽中的应力诱导半导体材料。 应力诱导半导体材料的不对称轮廓以不会加剧短通道效应的方式提高载流子迁移率。

    Method of document protection
    185.
    发明授权
    Method of document protection 有权
    文件保护方法

    公开(公告)号：US08120795B2

    公开(公告)日：2012-02-21

    申请号：US11991394

    申请日：2006-04-29

    Applicant: Wenfa Qi ,  Jiquan Xie ,  Bin Yang ,  Xiaohong Ding ,  Jiang Deng

    Inventor： Wenfa Qi ,  Jiquan Xie ,  Bin Yang ,  Xiaohong Ding ,  Jiang Deng

    IPC: G06F15/00 ,  G06K9/00

    CPC classification number: H04N1/00846 ,  G03G21/046 ,  G03G2215/00932 ,  H04N1/00875 ,  H04N1/00883

    Abstract: This invention relates to a method for preventing a copy of document, belonging to a technical field of entire copy protection of document. In the prior art, for some important documents, specially the secret ones, the reproduction of this kind of document is usually prohibited by its owner because of the security. But the technique in the prior art can not solve the problem of preventing unauthorized reproduction. The method of the present invention is intended to embed a shading pattern under the original image of anti-copy document by an application program installed in the copy device, and decide whether the document can be copied legally or not. By the method of present invention, it is possible to detect the watermark information of the anti-copy document accurately and quickly, and prevent the reproduction of the anti-copy document thoroughly. Moreover, an additional memory space is no need.

    Abstract translation: 本发明涉及一种防止文件副本的方法，属于整个文件复制保护的技术领域。 在现有技术中，对于一些重要的文件，特别是秘密的文件，这种文件的复制通常由于所有者的安全而被禁止。 但是现有技术中的技术不能解决防止未授权再现的问题。 本发明的方法是通过安装在复印装置中的应用程序将遮蔽图案嵌入到防拷贝文件的原始图像之下，并且决定是否可以合法复制文档。 通过本发明的方法，可以准确而快速地检测防拷贝文件的水印信息，并且防止反复制文件的再现彻底。 此外，不需要额外的内存空间。

    ACCELEROMETER
    188.
    发明申请
    ACCELEROMETER 有权
    加速度计

    公开(公告)号：US20110296916A1

    公开(公告)日：2011-12-08

    申请号：US13015987

    申请日：2011-01-28

    Applicant: Zhou Ge ,  Bin Yang ,  Zheng-Kui Meng ,  Yi-Lin Yan ,  Rui Zhang

    Inventor： Zhou Ge ,  Bin Yang ,  Zheng-Kui Meng ,  Yi-Lin Yan ,  Rui Zhang

    IPC: G01P15/125

    CPC classification number: G01P15/125 ,  G01P15/18 ,  G01P2015/082 ,  G01P2015/0848 ,  G01P2015/0854

    Abstract: A accelerometer includes a substrate define a stationary electrode thereon, a first moveable mass defining a conductive-layer thereon facing the stationary electrode, a plurality of first elastic elements coupled with a peripheral side of the first moveable mass, a first fixed element surrounding the first moveable mass and fixedly attached to the substrate, a plurality of first fixed electrodes extending outwardly from the first fixed element, a second moveable mass surrounding the first fixed electrodes, a plurality of first moveable electrodes extending inwardly from the second moveable mass toward the first fixed to element and parallel to the first fixed electrodes, respectively, a plurality of second elastic elements coupled with a peripheral side of the second moveable mass, and a second fixed element surrounding the second moveable mass and fixedly attached to the substrate.

    Abstract translation: 加速度计包括在其上限定固定电极的基板，限定其面向固定电极的导电层的第一可移动质量块，与第一可移动质量块的周边连接的多个第一弹性元件，围绕第一 可移动的质量并且固定地附接到基板，从第一固定元件向外延伸的多个第一固定电极，围绕第一固定电极的第二可移动质量;从第二可移动质量向内朝向第一固定 分别连接到第一固定电极的元件并且与第二可移动质量体的周边连接的多个第二弹性元件和围绕第二可移动块并固定地附接到基板的第二固定元件。

    Reishi F3 sub fraction polysaccharides and methods of using same
    189.
    发明授权
    Reishi F3 sub fraction polysaccharides and methods of using same 有权
    Reishi F3分级多糖及其使用方法

    公开(公告)号：US08071105B2

    公开(公告)日：2011-12-06

    申请号：US12244709

    申请日：2008-10-02

    Applicant: Shu-Mei Liang ,  Yen-Po Chen ,  Wen-Bin Yang ,  Chi-Huey Wong

    Inventor： Shu-Mei Liang ,  Yen-Po Chen ,  Wen-Bin Yang ,  Chi-Huey Wong

    IPC: A61K36/06

    CPC classification number: A61K39/0002 ,  A61K2039/55588

    Abstract: The present disclosure relates to the discovery of methods of isolating subfractions of an F3 Reishi extract, and of administration of these novel isolates to eukaryotic cells in order to induce certain immumodulatory, hematopoeitic and tumor-inhibiting phenotypic changes in those eukaryotic cells, mediated through particular toll-like receptor (TLR) and other transmembrane receptors. F3 subfractions F301 and F331 have demonstrated that F331 is capable of activating at least TLR-2 while F301 is capable of activating at least TLR-2, TLR-4, and TLR-5.

    Abstract translation: 本公开涉及发现分离F3赖氏提取物的亚组分的方法，以及将这些新型分离物施用于真核细胞，以便诱导那些通过特异性介导的那些真核细胞中的某些免疫调节，造血细胞和肿瘤抑制表型变化 toll样受体（TLR）和其他跨膜受体。 F3亚分数F301和F331已经证明F331能够至少激活至少TLR-2，而F301能够至少激活TLR-2，TLR-4和TLR-5。

    SHALLOW TRENCH ISOLATION EXTENSION
    190.
    发明申请
    SHALLOW TRENCH ISOLATION EXTENSION 有权
    浅层分离分离扩展

    公开(公告)号：US20110284985A1

    公开(公告)日：2011-11-24

    申请号：US12783914

    申请日：2010-05-20

    Applicant: Yanxiang Liu ,  Bin Yang

    Inventor： Yanxiang Liu ,  Bin Yang

    IPC: H01L29/06 ,  H01L21/762

    CPC classification number: H01L21/76229 ,  H01L21/76237

    Abstract: A semiconductor device is formed with extended STI regions. Embodiments include implanting oxygen under STI trenches prior to filling the trenches with oxide and subsequently annealing. An embodiment includes forming a recess in a silicon substrate, implanting oxygen into the silicon substrate below the recess, filling the recess with an oxide, and annealing the oxygen implanted silicon. The annealed oxygen implanted silicon extends the STI region, thereby reducing leakage current between N+ diffusions and N-well and between P+ diffusions and P-well, without causing STI fill holes and other defects.

    Abstract translation: 半导体器件形成有延伸的STI区域。 实施例包括在用氧化物填充沟槽并随后退火之前在STI沟槽下注入氧气。 一个实施例包括在硅衬底中形成凹槽，将氧注入到凹陷下方的硅衬底中，用氧化物填充凹槽，并对氧注入的硅进行退火。 退火的氧注入硅延伸STI区域，从而减少N +扩散与N阱之间以及P +扩散与P阱之间的漏电流，而不会引起STI填充孔和其他缺陷。

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