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公开(公告)号：US20190120887A1
公开(公告)日：2019-04-25
申请号：US16092540
申请日：2017-02-27
Inventor： Kazuya KIKUNAGA
Abstract: With prior art static electricity distribution measuring devices, there has been the problem that it has not been possible to measure the amount of electrostatic charge over a wide range at high spatial resolution and quickly.In the present invention, there are provided: a detection unit 20 in which a plurality of sensors, provided upon a surface, move relatively along the surface of an electrostatically charged subject 100 to be measured, and detect potential changes generated by the distance to the surface of the measurement subject being changed; a reference distance measuring unit that measures the distance between the surface of the measurement subject and the surface of the detection unit; a distance adjustment unit that adjusts that distance so that it becomes a reference distance that is determined in advance; and a vibrating unit that causes the distance between the surface of the measurement subject and the surface of the detection unit to change upon a predetermined cycle.
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182.发明授权公开(公告)号：US10253253B2
公开(公告)日：2019-04-09
申请号：US15221805
申请日：2016-07-28
Inventor： Norio Murase , Ping Yang , Masanori Ando
Abstract: An object of the present invention is to prepare a fine particle with high durability and high brightness, in which semiconductor nanoparticles are assembled. The present invention provides fluorescent fine particles comprising Cd- and Se-containing semiconductor nanoparticles dispersed in silicon-containing fine particles, wherein the average particle size of the silicon-containing fine particles is 20 to 100 nm, and the number of semiconductor nanoparticles dispersed in the silicon-containing fine particles is 10 or more.
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183.发明授权公开(公告)号：US10240350B2
公开(公告)日：2019-03-26
申请号：US15101603
申请日：2014-12-02
Inventor： Tadanari Anpo , Shiro Hara
IPC: E04F15/024 , H01L21/677 , B62B3/06
Abstract: A free access floor structure to install a manufacturing apparatus such as a semiconductor manufacturing apparatus, in a short time, and a manufacturing apparatus and a carrier apparatus adapted for the floor structure. An embodiment of the manufacturing apparatus includes an apparatus-side connector which is provided, facing downward, to a bottom plate of a manufacturing apparatus. A floor structure of an embodiment includes a floor plate to be worked into a floor surface. The floor structure includes a floor-side connector which is provided, facing upward, to the floor plate so as to be connected with the apparatus-side connector according to a lowering operation of the manufacturing apparatus. An installation step (mounting step, piping/wiring step) of the manufacturing apparatus may thereby be performed in one step. As a result, the labor and the time required to install the manufacturing apparatus may be saved.
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184.发明申请公开(公告)号：US20190086346A1
公开(公告)日：2019-03-21
申请号：US16086691
申请日：2017-02-28
Inventor： Yasutaka AMAGAI , Takeshi SHIMAZAKI , Hiroyuki FUJIKI
Abstract: Thermophysical property measurement method and apparatus are provided that make it possible to simply and conveniently obtain a highly precise absolute thermoelectric power and thermal conductivity.Embodiments of the present invention provides a thermophysical property measurement method, including a first step of applying a DC voltage or a DC current at both ends of a metal to which a temperature gradient is applied to measure a first temperature at a center of the metal; a second step of applying DC voltages or DC currents of different polarities at both ends of the metal to measure a second temperature at the center of the metal; a third step of calculating a Thomson coefficient of the metal using the first and second temperatures measured in the first and second steps; and a fourth step of calculating at least one of absolute thermoelectric power and thermal conductivity of the metal using the Thomson coefficient calculated in the third step, the third step including: calculating an average value of a difference between the first temperature and the second temperature; calculating an average value of a sum of the first temperature and the second temperature; and dividing a product of a magnitude of a current that flows through the metal, electrical resistance of the metal, and the average value of the difference by the average value of the sum and the difference between the first temperature and the second temperature.
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公开(公告)号：US10234370B2
公开(公告)日：2019-03-19
申请号：US15561269
申请日：2016-03-30
Inventor： Haruhisa Kato , Naoko Oouchi , Ayako Nakamura
Abstract: To provide a particle size measuring device that enables simple in-line measurement of the particle size even in a case of nano-sized particles during dispersion. Provided is a particle size measuring device which measures the particle size of particles that perform Brownian motion in a dispersion medium. The particle size measuring device includes a transparent column which accommodates a dispersion medium therein; a laser light irradiating unit which irradiates the dispersion medium in the column with laser light; an imaging unit which includes a camera that images the dispersion medium in the column; an image analyzing unit which acquires a displacement of corresponding particles from at least a plurality of images captured at a predetermined time interval Δt; and a calculating unit which calculates the particle size based on the fact that a root mean square value of the displacement is proportional to kBT/3πηd where kB represents a Boltzmann constant, T represents an absolute temperature, η represents a viscosity coefficient of the dispersion medium, and d represents the particle size.
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Patent Agency Ranking
公开(公告)号：US20190074360A1
公开(公告)日：2019-03-07
申请号：US16092494
申请日：2017-03-22
Applicant: Sumitomo Electric Industries, Ltd. , NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
Inventor： Toru Hiyoshi , Takeyoshi Masuda , Ryouji Kosugi
IPC: H01L29/16 , H01L29/78 , H01L29/423 , H01L29/417 , H01L21/02 , H01L29/51 , H01L21/04 , H01L29/66
Abstract: A silicon carbide semiconductor device includes a silicon carbide substrate and a gate insulating film. The silicon carbide substrate includes a first impurity region, a second impurity region, a third impurity region, a fourth impurity region, a fifth impurity region, and a sixth impurity region. A first main surface of the silicon carbide substrate is provided with a trench defined by a side surface and a bottom portion. The sixth impurity region includes a first region which faces the bottom portion and a second region which faces a second main surface of the silicon carbide substrate. The first region is higher in impurity concentration than the second region. In a direction perpendicular to the second main surface, a fifth main surface of the fourth impurity region is located between a sixth main surface of the second impurity region and the second main surface.
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公开(公告)号：US20190033203A1
公开(公告)日：2019-01-31
申请号：US16147526
申请日：2018-09-28
Inventor： Yuzuru IKEHARA , Josaku SAKAKIMA
IPC: G01N21/21 , G01N21/3577
CPC classification number: G01N21/21 , A61B5/0075 , A61B5/14558 , A61B5/4283 , G01N21/3577 , G01N2021/945 , G01N2201/0683
Abstract: Provided is an observation apparatus that observes tissues of an organism. The observation apparatus includes a generator that generates first data obtained by irradiating the tissues with a first infrared light with a first wavelength and second data obtained by irradiating the tissues with a second infrared light with a second wavelength being different from the first infrared light in an optical property value with respect to a water, and a comparison calculator that compares the first data with the second data to generate bodily fluid data that indicates a presence of a bodily fluid on a surface of the tissues.
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188.发明申请公开(公告)号：US20190029953A1
公开(公告)日：2019-01-31
申请号：US15562870
申请日：2016-01-12
Inventor： Akira Ito , Takeshi Matsumura , Toru Gotanda , Noriko Tabayashi , Noriko Itchoda , Takashi Aoki , Uiko Kagaya
CPC classification number: A61K9/0053 , A23L33/00 , A61K9/0056 , A61K9/0058 , A61K9/20 , A61K38/212 , A61P27/16
Abstract: The object of the present invention is to provide a therapeutic agent illustrating an immediate and sustained effect on chronic intractable external otitis. The present invention provide a composition, pharmaceutical composition, food and feed for preventing and/or treating chronic intractable external otitis, each comprising interferon-α (IFNα) as an active ingredient. Orally administering the composition of the present invention can provide inhibition, alleviation, treatment and prevention for chronic intractable external otitis. According to the present invention, IFNα can give a sufficient effect even when administered in a very small amount.
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公开(公告)号：US20190019766A1
公开(公告)日：2019-01-17
申请号：US15750614
申请日：2016-08-03
Inventor： Yohei Hori , Yongxun Liu , Shinichi Ouchi , Tetsuji Yasuda , Meishoku Masahara , Toshifumi Irisawa , Kazuhiko Endo , Hiroyuki Ota , Tatsuro Maeda , Hanpei Koike , Yasuhiro Ogasahara , Toshihiro Katashita , Koichi Fukuda
IPC: H01L23/00 , H01L25/065 , H01L23/522
Abstract: A semiconductor device 100 of the present invention includes a front end and back ends A and B, each including a plurality of layers. Further, in the plurality of layers of the back end B, (i) circuits 22, 23, and 24 having a security function are provided in at least one layer having a wiring pitch of 100 nm or more, (ii) a circuit having a security function is provided in at least one wiring layer in M5 or higher level (M5, M6, M7, . . . ), (iii) a circuit having a security function is provided in at least one layer, for which immersion ArF exposure does not need to be used, or (iv) a circuit having a security function is provided in at least one layer that is exposed by using an exposure wavelength of 200 nm or more.
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公开(公告)号：US10180382B2
公开(公告)日：2019-01-15
申请号：US14374783
申请日：2013-01-25
Inventor： Masaharu Kuroda , Yasuyuki Yamamoto , Hiroshi Yabuno
Abstract: A linear elastic modulus measurement method and a linear elastic modulus measurement device can reduce external disturbances such as oscillation and electrical noise, and accurately and stably measure the linear elastic modulus of a linear elastic body even in the case where damping due to viscous stress is large. The measurement device computes the oscillation velocity (dx/dt) of an oscillator from the displacement of the oscillator brought into contact with the linear elastic body, and multiplies dx/dt by a linear velocity feedback gain to generate a feedback control signal. The measurement device applies, to the oscillator, a force proportional to the oscillation velocity of the oscillator by the feedback control signal, to cause the oscillator to self-oscillate. The measurement device computes the linear elastic modulus of the linear elastic body from the frequency when the self-oscillation of the oscillator is detected and the mass of the oscillator.
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