Hot cathode fluorescent tube illumination system
    181.
    发明授权
    Hot cathode fluorescent tube illumination system 失效
    热阴极荧光管照明系统

    公开(公告)号:US4660967A

    公开(公告)日:1987-04-28

    申请号:US592119

    申请日:1984-03-22

    CPC classification number: H01J63/02 G03B27/542

    Abstract: A slit light emitting type hot cathode fluorescent tube illumination system including at least one substrate, a plurality of strip anodes, a plurality of fluorescent substance layers each superposed on one of the anodes, and hot cathode filaments located above top surfaces of the fluorescent substance layers for emitting thermoelectrons exciting the fluorescent substance layers to emit light for illuminating an original by slit illumination. A cylindrical lens is located in a path of the light emitted by the fluorescent substance layers in such a manner that the generating line of the cylindrical lens is parallel to the length of the fluorescent substance layers. The substrate and cylindrical lens cooperate with each other to provide an illumination system in tubular form, with the aid of a side plate when necessary.

    Abstract translation: 一种狭缝发光型热阴极荧光管照明系统,包括至少一个基板,多个条状阳极,多个荧光物质层,每个阳极重叠在一个阳极上,以及位于荧光物质层顶表面上方的热阴极灯丝 用于发射激发荧光物质层的热电子以通过狭缝照明发光以照射原件。 柱面透镜位于由荧光物质层发射的光的路径中,使得柱面透镜的生成线平行于荧光物质层的长度。 基板和柱面透镜彼此协作以在必要时借助侧板提供管状形式的照明系统。

    Beam mode lamp with voltage modifying electrode
    182.
    发明授权
    Beam mode lamp with voltage modifying electrode 失效
    带电压修正电极的光束模式灯

    公开(公告)号:US4521718A

    公开(公告)日:1985-06-04

    申请号:US462736

    申请日:1983-02-01

    CPC classification number: H01J63/02

    Abstract: A beam mode lamp has two discharge electrodes which alternately function as anode and cathode. One or more modifying electrodes are located between the discharge electrodes. Each modifying electrode is kept equal to or negative with respect to the cathode, raising the operating voltage of the lamp from a normal 20 volts to line voltage.

    Abstract translation: 光束模式灯具有两个交替用作阳极和阴极的放电电极。 一个或多个修改电极位于放电电极之间。 每个修改电极相对于阴极保持等于或为负,将灯的工作电压从正常20伏提高到线电压。

    Thick-film circuit device
    183.
    发明授权
    Thick-film circuit device 失效
    厚膜电路器件

    公开(公告)号:US4215290A

    公开(公告)日:1980-07-29

    申请号:US958392

    申请日:1978-11-07

    CPC classification number: H01J63/02 H05K1/0306 H05K3/4685

    Abstract: A thick-film circuit device having a substrate of insulating material containing alkali components, a first crossover made of non-alkali type glass and formed on the substrate, wiring conductors formed on the first crossover according to a predetermined circuit pattern, and a second crossover made of glass and formed on the first crossover so that it covers the wiring conductors, the first crossover preventing entry of sodium ions into the second crossover.

    Abstract translation: 一种厚膜电路装置,具有含有碱成分的绝缘材料的基板,由非碱金属玻璃制成的第一交叉,并形成在基板上,根据规定电路图形成在第一交叉点上的布线导体和第二交叉 由玻璃制成并形成在第一个交叉点上,使其覆盖布线导体,第一个交叉防止钠离子进入第二个交叉点。

    Field electron emission film, field electron emission device, light emission device, and method for producing them
    190.
    发明授权
    Field electron emission film, field electron emission device, light emission device, and method for producing them 有权
    场电子发射膜,场电子发射装置,发光装置及其制造方法

    公开(公告)号:US09324556B2

    公开(公告)日:2016-04-26

    申请号:US14424074

    申请日:2013-08-12

    Abstract: A field electron emission film that is capable of being operated with low electric power and enhancing the uniformity in luminance within the light emission surface contains from 60 to 99.9% by mass of tin-doped indium oxide and from 0.1 to 20% by mass of carbon nanotubes. The film has a structure wherein grooves having a width in a range of from 0.1 to 50 mm are formed in a total extension of 2 mm or more per 1 mm2 on a surface of the film, and carbon nanotubes are exposed on a wall surface of the grooves. After forming an ITO film containing carbon nanotubes on a substrate, grooves are formed on a surface of the ITO film, and the end portions of the carbon nanotubes exposed to the wall surface of the grooves are designated as an emitter.

    Abstract translation: 能够以低功率运转并提高发光面内的亮度均匀性的场致电子发射膜含有锡掺杂氧化铟60〜99.9质量%,碳含量0.1〜20质量% 纳米管 该膜具有这样的结构,其中在膜的表面上形成宽度在0.1至50mm范围内的沟槽以2mm / mm 2以上的总延伸面形成,并且碳纳米管暴露在膜的表面上 凹槽。 在基板上形成含有碳纳米管的ITO膜之后,在ITO膜的表面上形成槽,将暴露于槽壁表面的碳纳米管的端部指定为发光体。

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