公开(公告)号：US5661601A

公开(公告)日：1997-08-26

申请号：US466180

申请日：1995-06-06

Applicant: Ho-young Kang ,  Cheol-hong Kim ,  Seong-oon Choi ,  Woo-sung Han ,  Chang-jin Sohn

Inventor： Ho-young Kang ,  Cheol-hong Kim ,  Seong-oon Choi ,  Woo-sung Han ,  Chang-jin Sohn

IPC: G03F1/00 ,  G03F1/70 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  G02B5/18 ,  G03B27/54

CPC classification number: G03F7/70125 ,  G03F1/50 ,  G03F1/60 ,  G03F7/2002 ,  G03F7/70241 ,  G03F7/70283 ,  G03F1/26

Abstract: A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of .-+. first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.

Abstract translation: 投影方法使用用于半导体器件的光刻工艺的改进的照明方法，并且投影系统和掩模使用投影方法。 通过去除通过聚光透镜的光的垂直入射分量来曝光物体。 零级衍射光破坏性地影响，并且 - / +一级衍射光的倾斜分量建设性地干扰。 斜入射分量光照射其上形成有图案的掩模。 光的垂直入射分量由于光栅掩模或形成在常规掩模背面上的光栅图案的相位差而被去除。 由于增加的对比度，光刻工艺的分辨率得到改善，并且焦点的深度也增加。 因此，可以使用常规投影曝光系统形成用于64Mb DRAM的图案。

公开(公告)号：US5427649A

公开(公告)日：1995-06-27

申请号：US153928

申请日：1993-11-18

Applicant: Cheol-hong Kim ,  Woo-sung Sung

Inventor： Cheol-hong Kim ,  Woo-sung Sung

IPC: G03F7/26 ,  G03F7/075 ,  G03F7/09 ,  G03F7/095 ,  H01L21/30 ,  H01L21/00

CPC classification number: G03F7/0755 ,  G03F7/094 ,  G03F7/095

Abstract: A method for forming a mask pattern using a multi-layer photoresist film process is disclosed. The processing is simplified from known processes by using a silylated photoresist film. A first photoresist layer is formed on substrate and part of the surface of the photoresist layer is silylated to thereby form a silylation layer. Then, a second photoresist layer is formed on the silylation layer, which is then exposed through the photo mask having a predetermined pattern. A second photoresist pattern is then formed after development. Then, a silylation layer pattern is formed by etching-back the silylation layer using the second photoresist pattern as an etching mask. The silylation pattern is then oxidized, and the first photoresist layer is etched using the oxidized silylation pattern, thereby forming a first photoresist pattern. A resolution increasing effect can be maintained using the two layer photoresist film structure without the need for an intermediate oxide film. Thus, the process is simplified and less undesired polymers are generated.

Abstract translation: 公开了一种使用多层光致抗蚀剂膜工艺形成掩模图案的方法。 通过使用甲硅烷基化的光致抗蚀剂膜，从已知方法简化了处理。 在基板上形成第一光致抗蚀剂层，将光致抗蚀剂层的表面的一部分甲硅烷基化从而形成甲硅烷基层。 然后，在甲硅烷基层上形成第二光致抗蚀剂层，然后通过具有预定图案的光掩模曝光。 然后在显影后形成第二光致抗蚀剂图案。 然后，通过使用第二光致抗蚀剂图案作为蚀刻掩模蚀刻甲硅烷基层来形成甲硅烷基层图案。 然后将甲硅烷基化图案氧化，并且使用氧化的甲硅烷基化图案蚀刻第一光致抗蚀剂层，由此形成第一光致抗蚀剂图案。 可以使用双层光致抗蚀剂膜结构保持分辨率增加效果，而不需要中间氧化膜。 因此，该方法被简化并且产生较少不期望的聚合物。

公开(公告)号：US09230866B2

公开(公告)日：2016-01-05

申请号：US14140775

申请日：2013-12-26

Applicant: Jae-Han Lee ,  Hoo-Sung Cho ,  Cheol-Hong Kim ,  Seung-Hak Park

Inventor： Jae-Han Lee ,  Hoo-Sung Cho ,  Cheol-Hong Kim ,  Seung-Hak Park

IPC: H01L21/027 ,  H01L21/66 ,  H01L21/311 ,  G03F1/70 ,  H01L27/115 ,  G03F1/84

CPC classification number: H01L22/12 ,  G03F1/70 ,  G03F1/84 ,  H01L21/31144 ,  H01L27/11556 ,  H01L27/11582

Abstract: A fabricating method of a customized mask includes forming first patterns in a mold structure, forming second patterns in the mold structure using initial masks, the mold structure having the first patterns formed therein, measuring overlap failure between the first patterns and the second patterns, and fabricating customized masks by compensating for pattern positions of the initial masks based on the measuring results, wherein compensating for the pattern positions of the initial masks includes shifting positions of at least some patterns of the initial masks according to shift directions and sizes of at least some of the first patterns.

Abstract translation: 定制掩模的制造方法包括在模具结构中形成第一图案，使用初始掩模在模具结构中形成第二图案，其中形成有第一图案的模具结构，测量第一图案与第二图案之间的重叠故障，以及 通过基于测量结果补偿初始掩模的图案位置来制造定制掩模，其中补偿初始掩模的图案位置包括根据至少一些的移动方向和尺寸的初始掩模的至少某些图案的移位位置 的第一种模式。

公开(公告)号：US09007567B2

公开(公告)日：2015-04-14

申请号：US13221360

申请日：2011-08-30

Applicant: Tae-Jin Park ,  Cheol-Hong Kim

Inventor： Tae-Jin Park ,  Cheol-Hong Kim

IPC: G03B27/32 ,  G03B27/58 ,  G03B27/53 ,  G03F7/20 ,  G03F9/00

CPC classification number: G03B27/58 ,  G03B27/53 ,  G03F7/70775 ,  G03F9/7088

Abstract: In a method of aligning a wafer stage, the wafer stage may be moved in an X-axis direction. A first coordinate of the wafer stage may be measured from a first measurement position inclined to the X-axis. The wafer stage may be moved in a Y-axis direction. A second coordinate of the wafer stage may be measured from a second measurement position inclined to the Y-axis. Thus, a movement distance of the wafer stage may be increased, so that the interferometers may accurately measure the position of the wafer stage.

Abstract translation: 在对准晶片台的方法中，晶片台可以在X轴方向上移动。 可以从倾斜于X轴的第一测量位置测量晶片台的第一坐标。 晶片载物台可沿Y轴方向移动。 可以从与Y轴倾斜的第二测量位置测量晶片台的第二坐标。 因此，可以增加晶片台的移动距离，使得干涉仪可以精确地测量晶片台的位置。

公开(公告)号：US20050083264A1

公开(公告)日：2005-04-21

申请号：US10942782

申请日：2004-09-17

Applicant: Cheol-Hong Kim

Inventor： Cheol-Hong Kim

IPC: G09F9/313 ,  G09G3/20 ,  G09G3/28 ,  G09G3/288 ,  H01J17/49

CPC classification number: G09G3/2948 ,  G09G3/2018 ,  G09G3/2022 ,  G09G3/2037 ,  G09G3/2062 ,  G09G2320/0238

Abstract: A method of driving a flat-panel display, to which k bits of gray-scale data consisting of first through j-th bits, each having a low weighted value, and (j+1)-th through k-th bits, each having a high weighted value, are input during each frame. The method includes time-dividing a unit frame into a plurality of sub-fields, displaying the first through j-th bits (j is an integer greater than 2) of the gray-scale data by a plurality of frames and displaying the (j+1)-th through k-th bits (k is an integer greater than 4) of the gray scale data by the plurality of sub-fields.

Abstract translation: 一种驱动平板显示器的方法，每个具有低加权值的第一至第j位的第k位灰度数据和第（j + 1）至第k位， 在每个帧期间输入具有高加权值。 该方法包括将单位帧时分为多个子场，通过多个帧显示灰度数据的第一至第j位（j大于2的整数），并显示（j +1个第k个比特（k是大于4的整数）的多个子场的灰度数据。

公开(公告)号：US5726741A

公开(公告)日：1998-03-10

申请号：US668904

申请日：1996-06-24

Applicant: Jong-wook Kye ,  Cheol-hong Kim ,  Tae-gyun Kim

Inventor： Jong-wook Kye ,  Cheol-hong Kim ,  Tae-gyun Kim

IPC: G02B27/44 ,  G03F1/00 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027 ,  G03B27/42

CPC classification number: G03F7/701 ,  G03F7/70108 ,  G03F7/70158

Abstract: A photolithographic projection system for transferring a predetermined pattern from a photomask to a wafer includes a radiation source and a grating mask. The radiation source projects radiation along a path through the photomask toward the wafer. The grating mask is positioned along the radiation path and is separate from the photomask. In a method for transferring a predetermined pattern from a photomask to a wafer, radiation is projected along a path through a grating mask and a photomask toward the wafer, and the grating mask is separate from the photomask.

Abstract translation: 用于将预定图案从光掩模转印到晶片的光刻投影系统包括辐射源和光栅掩模。 辐射源沿着通过光掩模的路径向晶片投射辐射。 光栅掩模沿辐射路径定位并与光掩模分开。 在将预定图案从光掩模转印到晶片的方法中，沿着通过光栅掩模和光掩模的路径朝向晶片投射辐射，并且光栅掩模与光掩模分离。