公开(公告)号：US06235643B1

公开(公告)日：2001-05-22

申请号：US09371966

申请日：1999-08-10

Applicant: David Mui ,  Dragan Podlesnik ,  Wei Liu ,  Gene Lee ,  Nam-Hun Kim ,  Jeff Chinn

Inventor： David Mui ,  Dragan Podlesnik ,  Wei Liu ,  Gene Lee ,  Nam-Hun Kim ,  Jeff Chinn

IPC: H01L2100

CPC classification number: H01L21/76232 ,  H01L21/3065 ,  H01L21/3081

Abstract: The present invention provides straight forward methods for plasma etching a trench having rounded top corners, or rounded bottom corners, or both in a silicon substrate. A first method for creating a rounded top corner on the etched silicon trench comprises etching both an overlying silicon oxide layer and an upper portion of the silicon substrate during a “break-through” step which immediately precedes the step in which the silicon trench is etched. The plasma feed gas for the break-through step comprises carbon and fluorine. In this method, the photoresist layer used to pattern the etch stack is preferably not removed prior to the break-through etching step. Subsequent to the break-through step, a trench is etched to a desired depth in the silicon substrate using a different plasma feed gas composition. A second method for creating a rounded top corner on the etched silicon trench comprises formation of a built-up extension on the sidewall of an overlying patterned silicon nitride hard mask during etch (break-through) of a silicon oxide adhesion layer which lies between the hard mask and a silicone substrate. The built-up extension upon the silicon nitride sidewall acts as a sacrificial masking material during etch of the silicon trench, delaying etching of the silicon at the outer edges of the top of the trench. This permits completion of trench etching with delayed etching of the top corner of the trench and provides a more gentle rounding (increased radius) at the top corners of the trench. During the etching of the silicon trench to its final dimensions, it is desirable to round the bottom corners of the finished silicon trench. We have discovered that a more rounded bottom trench corner is obtained using a two-step silicon etch process where the second step of the process is carried out at a higher process chamber pressure than the first step.

Abstract translation: 本发明提供了用于在硅衬底中等离子体蚀刻具有圆形顶角或圆形底角或两者的沟槽的直接方法。 用于在蚀刻的硅沟槽上形成圆角顶角的第一种方法包括：在“穿透”步骤​​期间蚀刻覆盖硅氧化物层和硅衬底的上部两者之间，其中硅裂纹之前的步骤 。 用于穿透步骤的等离子体进料气体包括碳和氟。 在该方法中，用于图案化蚀刻叠层的光致抗蚀剂层优选在穿透蚀刻步骤之前不被去除。 在突破步骤之后，使用不同的等离子体进料气体组合物将沟槽蚀刻到硅衬底中的所需深度。 用于在蚀刻的硅沟槽上产生圆角顶角的第二种方法包括在位于第二层之间的氧化硅粘合层的蚀刻（穿透）期间在覆盖的图案化氮化硅硬掩模的侧壁上形成积层延伸。 硬面罩和硅胶基材。 在硅氮化物侧壁上的累积延伸在硅沟槽的蚀刻期间用作牺牲掩模材料，延迟在沟槽顶部的外边缘处的硅的蚀刻。 这允许通过延迟蚀刻沟槽的顶角完成沟槽蚀刻，并且在沟槽的顶角提供更温和的圆化（增加的半径）。 在将硅沟槽蚀刻到其最终尺寸期间，期望圆形完成的硅沟槽的底角。 我们已经发现，使用两步硅蚀刻工艺获得更圆的底部沟槽角，其中该工艺的第二步骤在比第一步高的处理室压力下进行。

公开(公告)号：US6134684A

公开(公告)日：2000-10-17

申请号：US30972

申请日：1998-02-25

Applicant: Jason Raymond Baumgartner ,  Kenneth Douglas Klapproth ,  David Mui

Inventor： Jason Raymond Baumgartner ,  Kenneth Douglas Klapproth ,  David Mui

IPC: G06F11/267 ,  G01R31/28

CPC classification number: G06F11/2215 ,  G01R31/318385 ,  G06F11/221

Abstract: A method and system in an integrated circuit for the detection of defects within integrated circuits and planars are disclosed. Initially, pseudo-random data is generated. Thereafter, the pseudo-random data is transferred to a bus interface unit that determines, based upon the pseudo-random data, a particular transaction that may be injected upon a test unit by the bus interface unit. Expected results of all types of transactions that may be injected upon the test unit are predetermined. The particular transaction is then injected upon the test unit. Such transactions can include transactions such as a bus store or bus load. The results of the particular transaction upon the test unit are then compared with the expected results, wherein a mismatch between the expected results and the results of the particular transaction upon the test unit exposes an error within the test unit, such that a variety of test units may be portably tested for errors without the need for preconfiguring the test units for testing.

Abstract translation: 公开了一种用于检测集成电路和平面图中的缺陷的集成电路中的方法和系统。 最初，生成伪随机数据。 此后，伪随机数据被传送到总线接口单元，总线接口单元基于伪随机数据，确定由总线接口单元可以注入到测试单元上的特定事务。 可能注入到测试单元上的所有类型的交易的预期结果是预先确定的。 然后将特定事务注入到测试单元上。 这种交易可以包括诸如总线存储或总线负载的事务。 然后将测试单元上的特定交易的结果与预期结果进行比较，其中预期结果与测试单元上的特定交易的结果之间的不匹配暴露了测试单元内的错误，使得各种测试 可以对单元进行可移动测试，而不需要预先配置测试单元进行测试。

公开(公告)号：US6037265A

公开(公告)日：2000-03-14

申请号：US22772

申请日：1998-02-12

Applicant: David Mui ,  Ajay Kumar ,  Jeffrey Chinn

Inventor： David Mui ,  Ajay Kumar ,  Jeffrey Chinn

IPC: C09K13/00 ,  H01L21/3065

CPC classification number: C09K13/00 ,  H01L21/32137 ,  H01L21/28123 ,  H01L21/823437

Abstract: A method for producing a semiconductor device from a silicon substrate supporting a patterned hardmask layer, a tungsten silicide layer, a polysilicon layer, and a gate oxide layer. The method comprises etching the tungsten silicide layer and the polysilicon layer with an etchant gas comprising carbon monoxide (CO) and chlorine (Cl.sub.2). The etchant gas may also include hydrogen bromide (HBr) or a nitrogen-containing gas (e.g., N.sub.2).

Abstract translation: 一种用于从支撑图案化硬掩模层，硅化钨层，多晶硅层和栅极氧化物层的硅衬底制造半导体器件的方法。 该方法包括用包含一氧化碳（CO）和氯（Cl2）的蚀刻剂气体蚀刻硅化钨层和多晶硅层。 蚀刻剂气体还可以包括溴化氢（HBr）或含氮气体（例如N 2）。

公开(公告)号：US08611368B2

公开(公告)日：2013-12-17

申请号：US13162917

申请日：2011-06-17

Applicant: Shigehiro Asano ,  Charles Ray Johns ,  Matthew Edward King ,  Peichun Peter Liu ,  David Mui ,  Jieming Qi

Inventor： Shigehiro Asano ,  Charles Ray Johns ,  Matthew Edward King ,  Peichun Peter Liu ,  David Mui ,  Jieming Qi

IPC: H04L12/43 ,  H04L12/28

CPC classification number: H04L41/0896

Abstract: Disclosed is an apparatus which operates to substantially evenly distribute commands and/or data packets issued from a managed program or other entity over a given time period. The even distribution of these commands or data packets minimizes congestion in critical resources such as memory, I/O devices and/or the bus for transferring the data between source and destination. Any unmanaged commands or data packets are treated as in conventional technology.

公开(公告)号：US08601639B2

公开(公告)日：2013-12-10

申请号：US13351114

申请日：2012-01-16

Applicant: Ji Zhu ,  Arjun Mendiratta ,  David Mui

Inventor： Ji Zhu ,  Arjun Mendiratta ,  David Mui

IPC: B08B3/02

CPC classification number: B08B3/02 ,  C11D3/2079 ,  C11D3/222 ,  C11D3/37 ,  C11D3/3707 ,  C11D3/3723 ,  C11D3/3753 ,  C11D3/3765 ,  C11D3/3773 ,  C11D3/378 ,  C11D3/43 ,  C11D7/265 ,  C11D7/268 ,  C11D7/5004 ,  C11D11/0047 ,  C11D17/0013 ,  C11D17/003 ,  Y10S134/902

Abstract: An apparatus is provided that includes a substrate support assembly for holding the semiconductor substrate and a dispense head for applying a cleaning material to clean the contaminants from the substrate surface. The dispense head extends across a length of the semiconductor substrate and is positioned proximate to the substrate surface at a distance of between about 0.1 mm and about 4.5 mm. The proximate position enables application of a force to the cleaning material as it is applied to the substrate surface as a film, and the cleaning material provided through the dispense head contains a cleaning liquid, a plurality of solid components, and polymers of a polymeric compound, each of the plurality of solid components and polymers being greater than zero and less than 3% of the cleaning material, the plurality of solid components and the polymers are dispersed for application through the dispense head.

Abstract translation: 提供了一种装置，其包括用于保持半导体基板的基板支撑组件和用于施加清洁材料以从基板表面清洁污染物的分配头。 分配头延伸穿过半导体衬底的长度，并且以约0.1mm至约4.5mm的距离定位在衬底表面附近。 靠近的位置使得当作为薄膜施加到基材表面时能够对清洁材料施加力，并且通过分配头提供的清洁材料含有清洁液体，多种固体组分和聚合物的聚合物 多个固体组分和聚合物中的每一个都大于零且小于清洁材料的3％，多个固体组分和聚合物通过分散头分散以供施用。

公开(公告)号：US20130081655A1

公开(公告)日：2013-04-04

申请号：US13251064

申请日：2011-09-30

Applicant: Arjun Mendiratta ,  Cheng-Yu Lin ,  David Mui

Inventor： Arjun Mendiratta ,  Cheng-Yu Lin ,  David Mui

IPC: B08B3/04 ,  B08B1/02

CPC classification number: B08B1/02 ,  B08B3/04 ,  H01L21/02065 ,  H01L21/02074 ,  H01L21/6704 ,  H01L21/67051

Abstract: Apparatus and methods for processing a substrate are described. The methods include generating a fluid meniscus between upper and lower proximity heads. Each of the upper and lower proximity heads has a length that extends up to at least a diameter of the substrate. The method further includes dispensing a pre-wetting fluid towards an edge region of the substrate to form a pre-wet fluid meniscus on the edge region. The method also includes progressively moving the substrate along a path that is defined between the upper and lower proximity heads to progressively establish contact between the pre-wet fluid meniscus and the fluid meniscus.

Abstract translation: 描述了用于处理衬底的装置和方法。 所述方法包括在上和下邻近头之间产生流体弯液面。 上部和下部接近头部中的每一个具有至少延伸到基底的直径的长度。 该方法还包括向衬底的边缘区域分配预润湿流体，以在边缘区域上形成预湿液体弯液面。 该方法还包括沿着限定在上部和下部邻近头部之间的路径逐渐移动衬底，以逐渐建立预湿液体弯月面和流体弯液面之间的接触。

公开(公告)号：US08227394B2

公开(公告)日：2012-07-24

申请号：US12267345

申请日：2008-11-07

Applicant: Ji Zhu ,  Arjun Mendiratta ,  David Mui

Inventor： Ji Zhu ,  Arjun Mendiratta ,  David Mui

IPC: C11D3/26 ,  C11D3/37 ,  C11D3/43

CPC classification number: C11D7/5004 ,  C11D3/222 ,  C11D3/3765 ,  C11D3/3773 ,  C11D3/3776

Abstract: The embodiments of the present invention provide improved materials for cleaning patterned substrates with fine features. The cleaning materials have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. To assist removing of particles from the wafer (or substrate) surfaces, the polymeric compound of the polymers can contain a polar functional group, which can establish polar-polar molecular interaction and hydrogen bonds with hydrolyzed particles on the wafer surface. The polymers of a polymeric compound(s) with a large molecular weight form long polymer chains and network. The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials. The polymeric compound(s) of the polymers may also include a functional group that carries charge in the cleaning solution. The charge of the functional group of the polymers improves the particle removal efficiency.

Abstract translation: 本发明的实施例提供用于清洁具有精细特征的图案化衬底的改进材料。 清洁材料在清洁具有精细特征的图案化基材上具有优点，而基本上不损坏特征。 清洁材料是流体，液相或液相/气相，并围绕装置特征变形; 因此，清洁材料基本上不会损坏设备特征或将损坏降低在一起。 为了帮助从晶片（或衬底）表面去除颗粒，聚合物的聚合物可以含有极性官能团，其可以与晶片表面上的水解颗粒建立极性极性的分子相互作用和氢键。 具有大分子量的高分子化合物的聚合物形成长的聚合物链和网络。 与传统清洁材料相比，长的聚合物链和/或聚合物网络显示出捕获和捕获污染物的优异性能。 聚合物的聚合物还可以包括在清洁溶液中携带电荷的官能团。 聚合物官能团的电荷提高了颗粒去除效率。

公开(公告)号：US20110314259A1

公开(公告)日：2011-12-22

申请号：US12817609

申请日：2010-06-17

Applicant: Kattamuri Ekanadham ,  Brian R. Konigsburg ,  David S. Levitan ,  Jose E. Moreira ,  David Mui ,  IL Park

Inventor： Kattamuri Ekanadham ,  Brian R. Konigsburg ,  David S. Levitan ,  Jose E. Moreira ,  David Mui ,  IL Park

IPC: G06F9/30

CPC classification number: G06F9/30 ,  G06F9/30134 ,  G06F9/30163 ,  G06F9/3861

Abstract: A pointer is for pointing to a next-to-read location within a stack of information. For pushing information onto the stack: a value is saved of the pointer, which points to a first location within the stack as being the next-to-read location; the pointer is updated so that it points to a second location within the stack as being the next-to-read location; and the information is written for storage at the second location. For popping the information from the stack: in response to the pointer, the information is read from the second location as the next-to-read location; and the pointer is restored to equal the saved value so that it points to the first location as being the next-to-read location.

Abstract translation: 一个指针用于指向一堆信息中的下一个读取位置。 将信息推送到堆栈中：保存指针的值，该指针指向堆栈内的第一个位置作为下一个读取位置; 指针被更新，使得它指向堆栈内的第二位置作为下一个读取位置; 并且将信息写入第二位置处的存储。 为了从堆栈弹出信息：响应于指针，从第二位置读取信息作为下一个读取位置; 并且指针被恢复为等于保存的值，使得其指向作为下一个读取位置的第一位置。

公开(公告)号：US07967019B2

公开(公告)日：2011-06-28

申请号：US12212579

申请日：2008-09-17

Applicant: Ji Zhu ,  Arjun Mendiratta ,  David Mui

Inventor： Ji Zhu ,  Arjun Mendiratta ,  David Mui

IPC: B08B3/00

CPC classification number: C11D7/5009 ,  C11D3/3723 ,  C11D3/3765 ,  C11D3/3773 ,  C11D7/261 ,  C11D7/3263 ,  C11D7/34 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/67051 ,  Y10S134/902

Abstract: A cleaning material is applied to a surface of a substrate. The cleaning material includes one or more polymeric materials for entrapping contaminants present on the surface of the substrate. A rinsing fluid is applied to the surface of the substrate at a controlled velocity to effect removal of the cleaning material and contaminants entrapped within the cleaning material from the surface of the substrate. The controlled velocity of the rinsing fluid is set to cause the cleaning material to behave in an elastic manner when impacted by the rinsing fluid, thereby improving contaminant removal from the surface of the substrate.

Abstract translation: 将清洁材料施加到基板的表面。 清洁材料包括用于捕获存在于基底表面上的污染物的一种或多种聚合物材料。 冲洗流体以受控的速度施加到基底的表面，以从衬底的表面去除被清除材料和被污染的清洁材料中的污染物。 洗涤流体的受控速度被设定为使得清洁材料在被冲洗流体冲击时以弹性方式表现，从而改善从基材表面去除污染物质。

公开(公告)号：US20090198959A1

公开(公告)日：2009-08-06

申请号：US12023913

申请日：2008-01-31

Applicant: Ronald P. Hall ,  Michael Lance Karm ,  David Mui ,  Albert James Van Norstrand, JR.

Inventor： Ronald P. Hall ,  Michael Lance Karm ,  David Mui ,  Albert James Van Norstrand, JR.

IPC: G06F9/315

CPC classification number: G06F9/30134 ,  G06F9/30054 ,  G06F9/3806 ,  G06F9/3842

Abstract: A computer implemented method, a processor chip, a computer program product, and a data processing system managing a link stack. The data processing system utilizes speculative pushes onto and pops from the link stack. The link stack comprises a set of entries, and each entry comprises a set of state bits. A speculative push of a first instruction is received onto the data stack, and the first instruction is stored into a first entry of the set of entries. A first bit is set to indicate that the first instruction is a valid instruction. A second bit is set to indicate that the first instruction has been speculatively pushed onto the link stack. The link stack pointer control is updated to indicate that the first entry is a top-of-data stack entry.

Abstract translation: 计算机实现的方法，处理器芯片，计算机程序产品和管理链路栈的数据处理系统。 数据处理系统利用推测性推送并从链路堆栈弹出。 链路栈包括一组条目，并且每个条目包括一组状态位。 第一指令的推测推送被接收到数据堆栈上，并且第一指令被存储到该组条目的第一条目中。 第一位被设置为指示第一条指令是有效指令。 第二位被设置为指示第一条指令被推测地推到链路栈上。 更新链接堆栈指针控件以指示第一个条目是顶部数据堆栈条目。