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公开(公告)号：US07838969B2
公开(公告)日：2010-11-23
申请号：US11969017
申请日：2008-01-03
IPC分类号： H01L29/861 , H01L29/06
CPC分类号： H01L29/861 , H01L21/263 , H01L21/3242 , H01L29/0661 , H01L29/36
摘要： A diode is disclosed. One embodiment provides a semiconductor body having a front and a back, opposite the front in a vertical direction of the semiconductor body. The semiconductor body contains, successively in the vertical direction from the back to the front, a heavily n-doped zone, a weakly n-doped zone, a weakly p-doped zone and a heavily p-doped zone. In the vertical direction, the weakly p-doped zone has a thickness of at least 25% and at most 50% of the thickness of the semiconductor body.
摘要翻译： 公开了二极管。 一个实施例提供一种半导体本体，该半导体本体具有与半导体本体的垂直方向相反的前部和后部。 半导体本体从背面到前面的垂直方向依次包含高n掺杂区，弱n掺杂区，弱p掺杂区和高p掺杂区。 在垂直方向上，弱p掺杂区的厚度为半导体本体厚度的至少25％且至多50％。
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公开(公告)号：US20100136774A1
公开(公告)日：2010-06-03
申请号：US12648749
申请日：2009-12-29
IPC分类号： H01L21/22
CPC分类号： H01L29/861 , H01L21/263 , H01L21/3242 , H01L29/0661 , H01L29/36
摘要： A method of fabricating a diode is disclosed. One embodiment provides a semiconductor body having a front and a back, opposite the front in a vertical direction of the semiconductor body. The semiconductor body contains, successively in the vertical direction from the back to the front, a heavily n-doped zone, a weakly n-doped zone, a weakly p-doped zone and a heavily p-doped zone. In the vertical direction, the weakly p-doped zone has a thickness of at least 25% and at most 50% of the thickness of the semiconductor body.
摘要翻译： 公开了制造二极管的方法。 一个实施例提供一种半导体本体，该半导体本体具有与半导体本体的垂直方向相反的前部和后部。 半导体本体从背面到前面的垂直方向依次包含高n掺杂区，弱n掺杂区，弱p掺杂区和高p掺杂区。 在垂直方向上，弱p掺杂区的厚度为半导体本体厚度的至少25％且至多50％。
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公开(公告)号：US07521730B1
公开(公告)日：2009-04-21
申请号：US10089303
申请日：2000-09-29
IPC分类号： H01L29/74
CPC分类号： H01L27/0817 , H01L29/7428 , H03K17/08144 , H03K17/79
摘要： A thyristor arrangement includes a main thyristor, at least one auxiliary thyristor, a resistance device which electrically connects the auxiliary thyristor and the main thyristor to one another, and an optical triggering device for breakover triggering of the main thyristor via the auxiliary thyristor and the resistance device. The resistance device defines a time-dependent ohmic resistance in such a way that the value thereof is relatively large during a switch-on phase of the main thyristor and relatively small during a current-carrying phase of the main thyristor.
摘要翻译： 晶闸管装置包括主晶闸管，至少一个辅助晶闸管，将辅助晶闸管和主晶闸管彼此电连接的电阻装置，以及用于通过辅助晶闸管和电阻断开触发主晶闸管的光触发装置 设备。 电阻器件以这样的方式定义时间依赖欧姆电阻，使得其在主晶闸管的接通阶段期间的值相对较大，并且在主晶闸管的电流承载阶段期间相对较小。
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14.发明申请公开(公告)号：US20090057714A1
公开(公告)日：2009-03-05
申请号：US12200331
申请日：2008-08-28
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L21/332 , H01L29/76
CPC分类号： H01L29/7428 , H01L24/72 , H01L29/0692 , H01L29/1608 , H01L29/66363 , H01L2224/48491
摘要： A thyristor having a semiconductor body in which a p-doped emitter, an n-doped base, a p-doped base and an n-doped main emitter are arranged successively in a vertical direction starting from a rear face toward a front face. For buffering of the transient heating, a metallization is applied to the front face and/or to the rear face and includes at least one first section which has an area-specific heat capacity of more than 50 J·K−1·m−2 at each point.
摘要翻译： 具有半导体主体的晶闸管，其中p型掺杂的发射极，n掺杂的基极，p掺杂的基极和n掺杂的主发射极在从背面向前表面的垂直方向上连续布置。 为了缓冲瞬时加热，金属化被施加到前表面和/或后表面，并且包括至少一个第一部分，每个第一部分在每个部分具有大于50JK-1.m-2的面积比热容 点。
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公开(公告)号：US20080290466A1
公开(公告)日：2008-11-27
申请号：US12126751
申请日：2008-05-23
IPC分类号： H01L29/866 , H01L21/329
CPC分类号： H01L29/1608 , H01L29/36 , H01L29/6606 , H01L29/6609 , H01L29/868
摘要： A semiconductor element includes a semiconductor layer having a first doping density, a metallization, and a contact area located between the semiconductor layer and the metallization. The contact area includes at least one first semiconductor area that has a second doping density higher than the first doping density, and at least one second semiconductor area in the semiconductor layer. The second semiconductor area is in contact with the metallization and provides lower ohmic resistance to the metallization than a direct contact between the semiconductor layer and the metallization provides or would provide.
摘要翻译： 半导体元件包括具有第一掺杂密度，金属化以及位于半导体层和金属化之间的接触区域的半导体层。 接触区域包括至少一个具有高于第一掺杂浓度的第二掺杂密度的第一半导体区域和半导体层中的至少一个第二半导体区域。 与半导体层和提供或将要提供的金属化之间的直接接触相比，第二半导体区域与金属化接触并且提供比金属化更低的欧姆电阻。
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公开(公告)号：US06963088B2
公开(公告)日：2005-11-08
申请号：US10797246
申请日：2004-03-10
IPC分类号： H01L21/822 , H01L27/04 , H01L29/74 , H01L29/8605
CPC分类号： H01L29/7408 , H01L29/8605
摘要： A semiconductor component is arranged in a semiconductor body and has at least one integrated radially symmetrical lateral resistance having a location-dependent sheet resistance, the radial dependence of which is preferably configured such that the differential resistance dR is radially constant or the power dissipated in the resistance is radially constant.
摘要翻译： 半导体部件布置在半导体本体中并且具有至少一个具有位置相关薄片电阻的集成的径向对称横向电阻，其径向相关性优选地构造成使得差动电阻dR是径向恒定的或在 电阻是径向恒定的。
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公开(公告)号：US09412854B2
公开(公告)日：2016-08-09
申请号：US12908562
申请日：2010-10-20
IPC分类号： H01L27/082 , H01L29/739 , H01L25/07
CPC分类号： H01L29/7395 , H01L25/072 , H01L2924/0002 , H01L2924/00
摘要： An IGBT module is provided. The IGBT module has at least a first individual IGBT with a first softness during switching-off the IGBT module, and at least a second individual IGBT connected in parallel to the at least one first IGBT. The at least one second individual IGBT has a second softness during switching-off the IGBT module which is different than the first softness. Further a circuit and an electronic power device having two individual IGBTs, which are connected in parallel, are provided.
摘要翻译： 提供IGBT模块。 所述IGBT模块具有至少第一单独的IGBT，所述第一单独IGBT在关断所述IGBT模块期间具有第一柔性，以及至少第二独立IGBT并联连接至所述至少一个第一IGBT。 所述至少一个第二单独IGBT在关断IGBT模块期间具有与第一柔性不同的第二柔软度。 此外，提供了并联连接的具有两个单独的IGBT的电路和电子功率器件。
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18.发明授权Semiconductor device with trench structures including a recombination structure and a fill structure 有权具有包括复合结构和填充结构的沟槽结构的半导体器件公开(公告)号：US08921931B2
公开(公告)日：2014-12-30
申请号：US13487540
申请日：2012-06-04
CPC分类号： H01L29/861 , H01L21/761 , H01L21/76224 , H01L29/0619 , H01L29/0649 , H01L29/0692 , H01L29/872
摘要： A semiconductor body of a semiconductor device includes a doped layer of a first conductivity type and one or more doped zones of a second conductivity type. The one or more doped zones are formed between the doped layer and the first surface of a semiconductor body. Trench structures extend from one of the first and the second opposing surface into the semiconductor body. The trench structures are arranged between portions of the semiconductor body which are electrically connected to each other. The trench structures may be arranged for mitigating mechanical stress, locally controlling charge carrier mobility, locally controlling a charge carrier recombination rate and/or shaping buried diffusion zones.
摘要翻译： 半导体器件的半导体本体包括第一导电类型的掺杂层和第二导电类型的一个或多个掺杂区。 一个或多个掺杂区形成在半导体本体的掺杂层和第一表面之间。 沟槽结构从第一和第二相对表面之一延伸到半导体本体中。 沟槽结构布置在彼此电连接的半导体本体的部分之间。 沟槽结构可以被布置用于减轻机械应力，局部地控制电荷载流子迁移率，局部地控制电荷载流子复合速率和/或成形掩埋扩散区。
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19.发明授权Semiconductor device having two monocrystalline semiconductor regions with a different lattice constant and a strained semiconductor region between 有权具有两个具有不同晶格常数的单晶半导体区域和半导体区域之间的应变半导体区域的半导体器件公开(公告)号：US08889531B2
公开(公告)日：2014-11-18
申请号：US13237097
申请日：2011-09-20
CPC分类号： H01L29/045 , H01L21/02381 , H01L21/0243 , H01L21/0245 , H01L21/02532 , H01L21/02658 , H01L21/02667 , H01L21/3003 , H01L29/267 , H01L29/7842
摘要： A semiconductor body comprised of a semiconductor material includes a first monocrystalline region of the semiconductor material having a first lattice constant along a reference direction, a second monocrystalline region of the semiconductor material having a second lattice constant, which is different than the first, along the reference direction, and a third, strained monocrystalline region between the first region and the second region.
摘要翻译： 由半导体材料构成的半导体本体包括沿基准方向具有第一晶格常数的半导体材料的第一单晶区域，沿着沿着基准方向具有第一晶格常数的第一晶格常数不同于第一晶格常数 参考方向，以及在第一区域和第二区域之间的第三应变单晶区域。
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20.发明授权Method for forming laterally varying doping concentrations and a semiconductor device 有权用于形成横向变化的掺杂浓度的方法和半导体器件公开(公告)号：US08587025B1
公开(公告)日：2013-11-19
申请号：US13540693
申请日：2012-07-03
IPC分类号： H01L29/66
CPC分类号： H01L29/7393 , H01L21/263 , H01L21/26506 , H01L29/0834 , H01L29/36 , H01L29/66 , H01L29/66333 , H01L29/66363 , H01L29/74 , H01L29/7432 , H01L29/78 , H01L29/861
摘要： A method for forming a laterally varying n-type doping concentration is provided. The method includes providing a semiconductor wafer with a first surface, a second surface arranged opposite to the first surface and a first n-type semiconductor layer having a first maximum doping concentration, implanting protons of a first maximum energy into the first n-type semiconductor layer, and locally treating the second surface with a masked hydrogen plasma. Further, a semiconductor device is provided.
摘要翻译： 提供了形成横向变化的n型掺杂浓度的方法。 该方法包括提供具有第一表面，与第一表面相对布置的第二表面的半导体晶片和具有第一最大掺杂浓度的第一n型半导体层，将第一最大能量的质子注入第一n型半导体 并用掩蔽的氢等离子体局部处理第二表面。 此外，提供了一种半导体器件。
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