公开(公告)号：US08587025B1

公开(公告)日：2013-11-19

申请号：US13540693

申请日：2012-07-03

申请人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Yvonne Gawlina

发明人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Yvonne Gawlina

IPC分类号： H01L29/66

CPC分类号： H01L29/7393 ,  H01L21/263 ,  H01L21/26506 ,  H01L29/0834 ,  H01L29/36 ,  H01L29/66 ,  H01L29/66333 ,  H01L29/66363 ,  H01L29/74 ,  H01L29/7432 ,  H01L29/78 ,  H01L29/861

摘要： A method for forming a laterally varying n-type doping concentration is provided. The method includes providing a semiconductor wafer with a first surface, a second surface arranged opposite to the first surface and a first n-type semiconductor layer having a first maximum doping concentration, implanting protons of a first maximum energy into the first n-type semiconductor layer, and locally treating the second surface with a masked hydrogen plasma. Further, a semiconductor device is provided.

摘要翻译： 提供了形成横向变化的n型掺杂浓度的方法。 该方法包括提供具有第一表面，与第一表面相对布置的第二表面的半导体晶片和具有第一最大掺杂浓度的第一n型半导体层，将第一最大能量的质子注入第一n型半导体 并用掩蔽的氢等离子体局部处理第二表面。 此外，提供了一种半导体器件。

公开(公告)号：US10566462B2

公开(公告)日：2020-02-18

申请号：US12512285

申请日：2009-07-30

申请人： Hans-Joachim Schulze ,  Frank Pfirsch ,  Franz-Josef Niedernostheide

发明人： Hans-Joachim Schulze ,  Frank Pfirsch ,  Franz-Josef Niedernostheide

IPC分类号： H01L29/861

摘要： A bipolar semiconductor device and method are provided. One embodiment provides a bipolar semiconductor device including a first semiconductor region of a first conductivity type having a first doping concentration, a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region, and a plurality of third semiconductor regions of the first conductivity type at least partially arranged in the first semiconductor region and having a doping concentration which is higher than the first doping concentration. Each of the third semiconductor regions is provided with at least one respective junction termination structure.

公开(公告)号：US09269769B2

公开(公告)日：2016-02-23

申请号：US12324309

申请日：2008-11-26

申请人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Uwe Kellner-Werdehausen ,  Reiner Barthelmess

发明人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Uwe Kellner-Werdehausen ,  Reiner Barthelmess

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/165 ,  H01L29/66 ,  H01L29/739 ,  H01L29/74

CPC分类号： H01L27/0255 ,  H01L21/324 ,  H01L27/1027 ,  H01L29/0692 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/0839 ,  H01L29/1012 ,  H01L29/1016 ,  H01L29/165 ,  H01L29/167 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66363 ,  H01L29/7395 ,  H01L29/7428 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component including a short-circuit structure. One embodiment provides a semiconductor component having a semiconductor body composed of doped semiconductor material. The semiconductor body includes a first zone of a first conduction type and a second zone of a second conduction type, complementary to the first conduction type, the second zone adjoining the first zone. The first zone and the second zone are coupled to an electrically highly conductive layer. A connection zone of the second conduction type is arranged between the second zone and the electrically highly conductive layer.

摘要翻译： 包括短路结构的半导体部件。 一个实施例提供了具有由掺杂半导体材料构成的半导体本体的半导体部件。 半导体本体包括与第一导电类型互补的第一导电类型的第一区和第二导电类型的第二区，与第一区相邻的第二区。 第一区域和第二区域耦合到高度导电的层。 第二导电类型的连接区域布置在第二区域和导电层之间。

公开(公告)号：US08829562B2

公开(公告)日：2014-09-09

申请号：US13556335

申请日：2012-07-24

申请人： Hans-Joachim Schulze ,  Franz Hirler ,  Hans-Peter Felsl ,  Franz-Josef Niedernostheide

发明人： Hans-Joachim Schulze ,  Franz Hirler ,  Hans-Peter Felsl ,  Franz-Josef Niedernostheide

IPC分类号： H01L29/66 ,  H01L21/336

CPC分类号： H01L29/66 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/408 ,  H01L29/42368 ,  H01L29/512 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7397 ,  H01L29/7813

摘要： A semiconductor device includes a trench extending into a drift zone of a semiconductor body from a first surface. The semiconductor device further includes a gate electrode in the trench and a body region adjoining a sidewall of the trench. The semiconductor device further includes a dielectric structure in the trench. The dielectric structure includes a high-k dielectric in a lower part of the trench. The high-k dielectric includes a dielectric constant higher than that of SiO2. An extension of the high-k dielectric in a vertical direction perpendicular to the first surface is limited between a bottom side of the trench and a level where a bottom side of the body region adjoins the sidewall of the trench.

摘要翻译： 半导体器件包括从第一表面延伸到半导体本体的漂移区的沟槽。 半导体器件还包括在沟槽中的栅极电极和与沟槽的侧壁相邻的主体区域。 半导体器件还包括沟槽中的电介质结构。 电介质结构包括沟槽下部的高k电介质。 高k电介质包括比SiO2更高的介电常数。 在垂直于第一表面的垂直方向上的高k电介质的延伸在沟槽的底侧和体区的底侧与沟槽的侧壁相邻的水平之间被限制。

公开(公告)号：US08482062B2

公开(公告)日：2013-07-09

申请号：US13610240

申请日：2012-09-11

申请人： Frank Pfirsch ,  Maria Cotorogea ,  Franz Hirler ,  Franz-Josef Niedernostheide ,  Thomas Raker ,  Hans-Joachim Schulze ,  Hans Peter Felsl

发明人： Frank Pfirsch ,  Maria Cotorogea ,  Franz Hirler ,  Franz-Josef Niedernostheide ,  Thomas Raker ,  Hans-Joachim Schulze ,  Hans Peter Felsl

IPC分类号： H01L29/66

CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/7397

摘要： A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.

摘要翻译： 半导体器件包括从表面延伸到半导体本体中的第一沟槽和第二沟槽。 第一导电类型的主体区域邻接第一沟槽的第一侧壁和第二沟槽的第一侧壁，主体区域包括邻近源极结构的沟道部分，并且被配置为通过栅极结构来控制其导电性 。 通道部分形成在第二沟槽的第一侧壁处，并且不形成在第一沟槽的第一侧壁处。 第一导电类型的电浮动半导体区域邻接第一沟槽，并且具有位于半导体本体内比底体区域的底侧更深的底侧。

公开(公告)号：US08101506B2

公开(公告)日：2012-01-24

申请号：US12719487

申请日：2010-03-08

申请人： Hans-Joachim Schulze ,  Josef Lutz ,  Franz-Josef Niedernostheide ,  Ralf Siemieniec

发明人： Hans-Joachim Schulze ,  Josef Lutz ,  Franz-Josef Niedernostheide ,  Ralf Siemieniec

IPC分类号： H01L21/322

CPC分类号： H01L21/266 ,  H01L21/263 ,  H01L21/26506 ,  H01L29/0878 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/7395

摘要： A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.

摘要翻译： 一种用于在半导体本体中制造掩埋的n掺杂半导体区的方法。 在一个实施例中，该方法包括至少在要在半导体本体中掺杂的区域中产生氧浓度。 半导体体经由一侧用非掺杂粒子照射，以在要掺杂的区域中产生缺陷。 进行热处理。 本发明还涉及具有场停止区域的半导体部件。

公开(公告)号：US07884389B2

公开(公告)日：2011-02-08

申请号：US11651937

申请日：2007-01-10

申请人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Uwe Kellner-Werdehausen ,  Reiner Barthelmess

发明人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Uwe Kellner-Werdehausen ,  Reiner Barthelmess

IPC分类号： H01L29/74

CPC分类号： H01L29/7397 ,  H01L29/0696 ,  H01L29/66363 ,  H01L29/7428

摘要： Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method. The invention relates to a bipolar power semiconductor component comprising a semiconductor body (1), in which a p-doped emitter (8), an n-doped base (7), a p-doped base (6) and an n-doped main emitter (5) are arranged successively in a vertical direction (v). The p-doped emitter (8) has a number of heavily p-doped zones (82) having a locally increased p-type doping.

摘要翻译： 双极性功率半导体元件包括p型发射极和p型发射极中较高掺杂的区域，以及制造方法。 本发明涉及一种双极功率半导体元件，包括半导体本体（1），其中p掺杂发射极（8），n掺杂基极（7），p掺杂基极（6）和n掺杂 主发射器（5）沿垂直方向（v）连续布置。 p掺杂发射极（8）具​​有多个具有局部增加的p型掺杂的高p掺杂区（82）。

公开(公告)号：US07838969B2

公开(公告)日：2010-11-23

申请号：US11969017

申请日：2008-01-03

申请人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Reiner Barthelmess

发明人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Reiner Barthelmess

IPC分类号： H01L29/861 ,  H01L29/06

CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/3242 ,  H01L29/0661 ,  H01L29/36

摘要： A diode is disclosed. One embodiment provides a semiconductor body having a front and a back, opposite the front in a vertical direction of the semiconductor body. The semiconductor body contains, successively in the vertical direction from the back to the front, a heavily n-doped zone, a weakly n-doped zone, a weakly p-doped zone and a heavily p-doped zone. In the vertical direction, the weakly p-doped zone has a thickness of at least 25% and at most 50% of the thickness of the semiconductor body.

摘要翻译： 公开了二极管。 一个实施例提供一种半导体本体，该半导体本体具有与半导体本体的垂直方向相反的前部和后部。 半导体本体从背面到前面的垂直方向依次包含高n掺杂区，弱n掺杂区，弱p掺杂区和高p掺杂区。 在垂直方向上，弱p掺杂区的厚度为半导体本体厚度的至少25％且至多50％。

公开(公告)号：US20100136774A1

公开(公告)日：2010-06-03

申请号：US12648749

申请日：2009-12-29

申请人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Reiner Barthelmess

发明人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Reiner Barthelmess

IPC分类号： H01L21/22

CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/3242 ,  H01L29/0661 ,  H01L29/36

摘要： A method of fabricating a diode is disclosed. One embodiment provides a semiconductor body having a front and a back, opposite the front in a vertical direction of the semiconductor body. The semiconductor body contains, successively in the vertical direction from the back to the front, a heavily n-doped zone, a weakly n-doped zone, a weakly p-doped zone and a heavily p-doped zone. In the vertical direction, the weakly p-doped zone has a thickness of at least 25% and at most 50% of the thickness of the semiconductor body.

摘要翻译： 公开了制造二极管的方法。 一个实施例提供一种半导体本体，该半导体本体具有与半导体本体的垂直方向相反的前部和后部。 半导体本体从背面到前面的垂直方向依次包含高n掺杂区，弱n掺杂区，弱p掺杂区和高p掺杂区。 在垂直方向上，弱p掺杂区的厚度为半导体本体厚度的至少25％且至多50％。

公开(公告)号：US20090057714A1

公开(公告)日：2009-03-05

申请号：US12200331

申请日：2008-08-28

申请人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Uwe Kellner-Werdehausen ,  Reiner Barthelmess

发明人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Uwe Kellner-Werdehausen ,  Reiner Barthelmess

IPC分类号： H01L21/332 ,  H01L29/76

CPC分类号： H01L29/7428 ,  H01L24/72 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/66363 ,  H01L2224/48491

摘要： A thyristor having a semiconductor body in which a p-doped emitter, an n-doped base, a p-doped base and an n-doped main emitter are arranged successively in a vertical direction starting from a rear face toward a front face. For buffering of the transient heating, a metallization is applied to the front face and/or to the rear face and includes at least one first section which has an area-specific heat capacity of more than 50 J·K−1·m−2 at each point.

摘要翻译： 具有半导体主体的晶闸管，其中p型掺杂的发射极，n掺杂的基极，p掺杂的基极和n掺杂的主发射极在从背面向前表面的垂直方向上连续布置。 为了缓冲瞬时加热，金属化被施加到前表面和/或后表面，并且包括至少一个第一部分，每个第一部分在每个部分具有大于50JK-1.m-2的面积比热容 点。