公开(公告)号：US20100102412A1

公开(公告)日：2010-04-29

申请号：US12404275

申请日：2009-03-13

Applicant: Dongwoo SUH ,  Sam Hoon KIM ,  Gyungock KIM ,  JiHo JOO

Inventor： Dongwoo SUH ,  Sam Hoon KIM ,  Gyungock KIM ,  JiHo JOO

IPC: H01L33/00 ,  H01L21/20

CPC classification number: H01L31/028 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02667 ,  H01L31/103 ,  H01L31/1808 ,  H01L31/1872 ,  Y02E10/50 ,  Y02P70/521

Abstract: Provided is a germanium photodetector having a germanium epitaxial layer formed without using a buffer layer and a method of fabricating the same. In the method, an amorphous germanium layer is formed on a substrate. The amorphous germanium layer is heated up to a high temperature to form a crystallized germanium layer. A germanium epitaxial layer is formed on the crystallized germanium layer.

Abstract translation: 提供了具有不使用缓冲层形成的锗外延层的锗光电检测器及其制造方法。 在该方法中，在基板上形成无定形锗层。 将非晶锗层加热至高温以形成结晶的锗层。 在结晶的锗层上形成锗外延层。

公开(公告)号：US07646942B2

公开(公告)日：2010-01-12

申请号：US11833004

申请日：2007-08-02

Applicant: Jeong Woo Park ,  Gyungock Kim ,  Hyun Soo Kim ,  Bongki Mheen

Inventor： Jeong Woo Park ,  Gyungock Kim ,  Hyun Soo Kim ,  Bongki Mheen

IPC: G02F1/035 ,  G02B6/26

CPC classification number: G02F1/025 ,  G02F1/3133 ,  G02F2001/0152 ,  G02F2203/15

Abstract: Provided is a high-speed ring optical modulator based on a silicon semiconductor, having increased optical modulation speed. The high-speed ring optical modulator includes a ring optical waveguide including a portion in which the refractive index varies, that is, a refractive index variation portion, and an optical waveguide having a constant refractive index. The refractive index variation portion comprises a bipolar transistor. Thus carriers can be supplied to and discharged from the refractive index variation portion, through which light is transmitted, at high speed, and thus the optical modulation speed can be increased.

Abstract translation: 提供了一种基于硅半导体的高速环形光调制器，其具有增加的光调制速度。 高速环形光调制器包括环形光波导，其包括折射率变化的部分，即折射率变化部分和具有恒定折射率的光波导。 折射率变化部分包括双极晶体管。 因此，可以高速地将载流子提供给发射光的折射率变化部分放出，从而可以提高光调制速度。

公开(公告)号：US20090237770A1

公开(公告)日：2009-09-24

申请号：US12375343

申请日：2007-04-24

Applicant: Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Gyungock Kim

Inventor： Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Gyungock Kim

IPC: G02F1/015 ,  H01L29/78 ,  H01L33/00

CPC classification number: G02F1/025 ,  G02F1/225 ,  G02F1/3132 ,  H01L31/105

Abstract: Provided is an optical device with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities and has a uniform thickness; a gate insulating layer which has a ? shape and is formed on a portion of the first semiconductor layer and has a thin center portion; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive type impurities.

Abstract translation: 提供了一种具有改善的相移和光传播损耗的光学器件，而不会降低光学器件的动态特性。 光学器件包括掺杂有第一类导电杂质并具有均匀厚度的第一半导体层; 栅绝缘层， 形成在第一半导体层的一部分上，并且具有薄的中心部分; 以及第二半导体层，其覆盖所述栅极绝缘层的上表面并且掺杂有与所述第一类型的导电类型杂质相反的第二类型的导电杂质。

公开(公告)号：US20050098836A1

公开(公告)日：2005-05-12

申请号：US10866274

申请日：2004-06-10

Applicant: Hyun Kim ,  Doo Youn ,  Kwang Kang ,  Byung Chae ,  Yong Lim ,  Seong Kim ,  Sungyul Maeng ,  Gyungock Kim

Inventor： Hyun Kim ,  Doo Youn ,  Kwang Kang ,  Byung Chae ,  Yong Lim ,  Seong Kim ,  Sungyul Maeng ,  Gyungock Kim

IPC: H01L21/822 ,  H01L27/04 ,  H01L29/78 ,  H01L45/00 ,  H01L49/00 ,  H02H9/02 ,  H01L29/94

CPC classification number: H01L45/00

Abstract: A current-jump-control circuit including an abrupt metal-insulator phase transition device is proposed, and includes a source, the abrupt metal-insulator phase transition device and a resistive element. The abrupt metal-insulator phase transition device includes first and second electrodes connected to the source, and shows an abrupt metal-insulator phase transition characteristic of a current jump when an electric field is applied between the first electrode and the second electrode. The resistive element is connected between the source and the abrupt metal-insulator phase transition device to control a jump current flowing through the abrupt metal-insulator phase transition device. According to the above current control circuit, the abrupt metal-insulator phase transition device can be prevented from being failed due to a large amount of current and thus the current-jump-control circuit can be applied in various application fields.

Abstract translation: 提出了包括突变金属 - 绝缘体相变装置的电流跳跃控制电路，并且包括源极，突变金属 - 绝缘体相变装置和电阻元件。 突变金属 - 绝缘体相变装置包括连接到源极的第一和第二电极，并且当在第一电极和第二电极之间施加电场时，显示出电流跳跃的突变金属 - 绝缘体相变特性。 电阻元件连接在源极和突变金属 - 绝缘体相变器件之间，以控制流过突发金属 - 绝缘体相变器件的跳跃电流。 根据上述电流控制电路，能够防止突变金属 - 绝缘体相变装置由于大量的电流而发生故障，因此电流跳跃控制电路可以应用于各种应用领域。

公开(公告)号：US08859319B2

公开(公告)日：2014-10-14

申请号：US13612736

申请日：2012-09-12

Applicant: Sang Hoon Kim ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

Inventor： Sang Hoon Kim ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

IPC: H01L31/18

CPC classification number: H01L31/1804 ,  G02B6/12004 ,  G02B6/131 ,  H01L31/02327 ,  H01L31/103 ,  H01L31/1037 ,  H01L31/109 ,  Y02E10/547 ,  Y02P70/521

Abstract: Methods of forming photo detectors are provided. The method includes providing a semiconductor layer on a substrate, forming a trench in the semiconductor layer, forming a first single crystalline layer and a second single crystalline layer using a selective single crystalline growth process in the trench, and patterning the first and second single crystalline layers and the semiconductor layer to form a first single crystalline pattern, a second single crystalline pattern and an optical waveguide.

Abstract translation: 提供了形成光电检测器的方法。 该方法包括在衬底上提供半导体层，在半导体层中形成沟槽，在沟槽中使用选择性单晶生长工艺形成第一单晶层和第二单晶层，以及使第一和第二单晶 层和半导体层以形成第一单晶图案，第二单晶图案和光波导。

公开(公告)号：US08615149B2

公开(公告)日：2013-12-24

申请号：US13190403

申请日：2011-07-25

Applicant: Do Won Kim ,  Gyungock Kim ,  JunYeong Lee

Inventor： Do Won Kim ,  Gyungock Kim ,  JunYeong Lee

IPC: G02B6/00 ,  G02B6/12 ,  G02B6/36 ,  H01R43/16

CPC classification number: G02B6/4292 ,  G02B6/3644 ,  G02B6/3652 ,  G02B6/3885

Abstract: Provided are a photonics chip and an optical apparatus including the same. The chip may include a substrate, an optical waveguide, an optical coupler, and a plurality of alignment units. The optical waveguide is formed on the substrate. The optical coupler is formed at the optical waveguide. The alignment units align an optical connector which fixes at least one optical fiber coupled to the optical coupler, on the substrate.

Abstract translation: 提供了一种光子学芯片和包括其的光学装置。 芯片可以包括基板，光波导，光耦合器和多个对准单元。 光波导形成在基板上。 光耦合器形成在光波导处。 对准单元对准在衬底上固定耦合到光耦合器的至少一个光纤的光连接器。

公开(公告)号：US20130156370A1

公开(公告)日：2013-06-20

申请号：US13620560

申请日：2012-09-14

Applicant: Do Won Kim ,  Gyungock Kim

Inventor： Do Won Kim ,  Gyungock Kim

IPC: G02B6/12 ,  G02B6/26

CPC classification number: G02B6/305 ,  G02B6/1228 ,  G02B2006/12061

Abstract: Provided are optical coupling devices and silicon photonics chips having the same. the optical coupling device may include a lower layer having a first region and a second region, a first core layer disposed on the lower layer, the first core layer including first and second waveguides disposed on the first and second regions, respectively, a clad layer covering the first waveguide, and a second core layer interposed between the clad layer and the lower layer to cover the second waveguide. The second waveguide has a width decreasing with increasing distance from the first region and a vertical thickness greater than that of the first waveguide.

Abstract translation: 提供了具有其的光耦合器件和硅光子芯片。 光耦合装置可以包括具有第一区域和第二区域的下层，设置在下层上的第一芯层，第一芯层分别包括设置在第一和第二区域上的第一和第二波导，包层 覆盖第一波导，以及插入在包层和下层之间以覆盖第二波导的第二芯层。 第二波导的宽度随着距离第一区域的距离增加而减小，并且垂直厚度大于第一波导的垂直厚度。

公开(公告)号：US20120126357A1

公开(公告)日：2012-05-24

申请号：US13284818

申请日：2011-10-28

Applicant: Sang Hoon KIM ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

Inventor： Sang Hoon KIM ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

IPC: H01L31/102 ,  H01L31/18

CPC classification number: H01L31/102 ,  H01L31/18

Abstract: Provided are light detection devices and methods of manufacturing the same. The light detection device includes a first conductive pattern on a surface of a substrate, an insulating pattern on the substrate and having an opening exposing at least a portion of the first conductive pattern, a light absorbing layer filling the opening of the insulating pattern and having a top surface disposed at a level substantially higher than a top surface of the insulating pattern, a second conductive pattern on the light absorbing layer, and connecting terminals electrically connected to the first and second conductive patterns, respectively.

Abstract translation: 提供了光检测装置及其制造方法。 光检测装置包括在基板的表面上的第一导电图案，在基板上的绝缘图案，并且具有露出第一导电图案的至少一部分的开口，填充绝缘图案的开口的光吸收层，并且具有 设置在基本上高于绝缘图案的顶表面的高度的顶表面，在光吸收层上的第二导电图案，以及分别电连接到第一和第二导电图案的连接端子。

公开(公告)号：US08180184B2

公开(公告)日：2012-05-15

申请号：US12504607

申请日：2009-07-16

Applicant: Jeong Woo Park ,  Jongbum You ,  Gyungock Kim

Inventor： Jeong Woo Park ,  Jongbum You ,  Gyungock Kim

IPC: G02F1/035

CPC classification number: G02F1/025 ,  G02F2001/0156 ,  G02F2201/063 ,  G02F2201/12 ,  G02F2202/105 ,  G02F2202/32

Abstract: An absorption modulator is provided. The absorption modulator includes a substrate, an insulation layer disposed on the substrate, and a waveguide having a P-I-N diode structure on the insulation layer. Absorptance of an intrinsic region in the P-I-N diode structure is varied when modulating light inputted to the waveguide. The absorption modulator obtains the improved characteristics, such as high speed, low power consumption, and small size, because it greatly reduces the cross-sectional area of the P-I-N diode structure.

Abstract translation: 提供吸收调制器。 吸收调制器包括衬底，设置在衬底上的绝缘层和在绝缘层上具有P-I-N二极管结构的波导。 当调制输入到波导的光时，P-I-N二极管结构中的本征区域的吸收变化。 吸收调制器由于大大降低了P-I-N二极管结构的截面面积而获得了高速，低功耗，小尺寸等改进的特性。

公开(公告)号：US20120063714A1

公开(公告)日：2012-03-15

申请号：US13013012

申请日：2011-01-25

Applicant: Jeong Woo PARK ,  Gyungock KIM

Inventor： Jeong Woo PARK ,  Gyungock KIM

IPC: G02F1/295

CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2201/063

Abstract: Provided are an electro-optic device with a high modulation rate and a mach-zehnder optical modulator having the same. The electro-optic device includes a slap, a rip waveguide, a first impurity region, a second impurity region, and a third impurity region. The slap is disposed on a substrate. The rip waveguide includes a mesa extending in one direction on the slap and the slap disposed under the mesa. The first impurity region is disposed in the slap of one side of the mesa. The third impurity region is disposed in the slap of the other side of the mesa to oppose the first impurity region. The second impurity region is disposed in the rip waveguide between the first impurity region and the third impurity region.

Abstract translation: 提供具有高调制率的电光装置和具有该电光装置的马赫 - 泽德光调制器。 电光装置包括拍打，裂口波导，第一杂质区，第二杂质区和第三杂质区。 拍击被设置在基板上。 裂口波导包括在拍击上沿一个方向延伸的台面和设置在台面下方的拍子。 第一杂质区设置在台面的一侧的一旁。 第三杂质区域设置在台面的另一侧的拍击中以与第一杂质区域相对。 第二杂质区设置在第一杂质区和第三杂质区之间的裂缝波导中。