Formation of low K material utilizing process having readily cleaned by-products
    18.
    发明授权
    Formation of low K material utilizing process having readily cleaned by-products 失效
    形成具有容易清洗的副产物的低K材料利用方法

    公开(公告)号:US07501354B2

    公开(公告)日:2009-03-10

    申请号:US11233988

    申请日:2005-09-09

    Abstract: Nano-porous low dielectric constant films are deposited utilizing materials having reactive by-products readily removed from a processing chamber by plasma cleaning. In accordance with one embodiment, an oxidizable silicon containing compound is reacted with an oxidizable non-silicon component having thermally labile groups, in a reactive oxygen ambient and in the presence of a plasma. The deposited silicon oxide film is annealed to form dispersed microscopic voids or pores that remain in the nano-porous silicon. Oxidizable non-silicon components with thermally labile groups that leave by-products readily removed from the chamber, include but are not limited to, limonene, carene, cymene, fenchone, vinyl acetate, methyl methacrylate, ethyl vinyl ether, tetrahydrofuran, furan, 2,5 Norbornadiene, cyclopentene, cyclopentene oxide, methyl cyclopentene, 2-cyclopentene-1-one, and 1-butene.

    Abstract translation: 使用具有通过等离子体清洗容易从处理室除去的反应性副产物的材料沉积纳米多孔低介电常数膜。 根据一个实施方案,可氧化的含硅化合物与具有热不稳定基团的可氧化非硅组分在活性氧环境中和在等离子体存在下反应。 将沉积的氧化硅膜退火以形成留在纳米多孔硅中的分散的微观空隙或孔隙。 包括但不限于:柠檬烯,护甲,伞花烃,氟酮,乙酸乙烯酯,甲基丙烯酸甲酯,乙基乙烯基醚,四氢呋喃,呋喃,2 ,5降冰片二烯,环戊烯,环戊烯氧化物,甲基环戊烯,2-环戊烯-1-酮和1-丁烯。

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