公开(公告)号：US07767472B2

公开(公告)日：2010-08-03

申请号：US11882398

申请日：2007-08-01

申请人： Atsushi Shigeta ,  Gen Toyota ,  Hiroyuki Yano ,  Kunio Oishi ,  Kenya Ito ,  Masayuki Nakanishi ,  Kenji Yamaguchi

发明人： Atsushi Shigeta ,  Gen Toyota ,  Hiroyuki Yano ,  Kunio Oishi ,  Kenya Ito ,  Masayuki Nakanishi ,  Kenji Yamaguchi

IPC分类号： H01L21/00

CPC分类号： B24B37/013 ,  B24B9/065

摘要： A substrate processing method is used to polish a substrate. The substrate processing method includes rotating a substrate 13 by a motor 12, polishing a first surface of a peripheral portion of the substrate 13 by pressing a polishing surface of a polishing mechanism 20 against the first surface, determining a polishing end point of the first surface by monitoring a polished state of the first surface, stopping the polishing according to the determining the polishing end point, determining a polishing time spent for the polishing, determining a polishing time for a second surface of the peripheral portion based on the polishing time of the first surface, and polishing the second surface for the determined polishing time.

摘要翻译： 基板处理方法用于抛光基板。 基板处理方法包括通过马达12旋转基板13，通过将研磨机构20的研磨面压在第一面上来研磨基板13的周边部的第一面，确定第一面的研磨终点 通过监测第一表面的抛光状态，根据确定抛光终点停止抛光，确定抛光所用的抛光时间，基于抛光时间确定周边部分的第二表面的抛光时间 第一表面，并抛光第二表面以确定抛光时间。

公开(公告)号：US20100076118A1

公开(公告)日：2010-03-25

申请号：US12516474

申请日：2008-09-04

申请人： Hiroyuki Yano ,  Yukio Isobe ,  Naoya Ichikawa ,  Takayuki Hattori

发明人： Hiroyuki Yano ,  Yukio Isobe ,  Naoya Ichikawa ,  Takayuki Hattori

IPC分类号： C08J3/22 ,  C08C1/00

CPC分类号： B60C11/14 ,  B60C1/00 ,  C08G2380/00 ,  C08K3/06 ,  C08K5/0025 ,  C08K7/02 ,  C08L1/02 ,  C08L1/08 ,  C08L1/12 ,  C08L7/00 ,  C08L9/00 ,  C08L21/00 ,  C08L97/02 ,  C08L2205/16 ,  Y02T10/862 ,  C08L2666/26

摘要： By using a vulcanized rubber composition containing a rubber component composed of at least any one of a natural rubber, a modified natural rubber and a synthetic rubber, and chemically modified microfibril cellulose, it is possible to provide a vulcanized rubber composition that is environmentally conscious and that exhibits excellent rupture characteristics and a low energy loss, and a pneumatic tire that is excellent in rolling resistance property, steering stability and durability.

摘要翻译： 通过使用含有由天然橡胶，改性天然橡胶和合成橡胶中的至少任一种构成的橡胶成分的硫化橡胶组合物和化学改性的微原纤维素，可以提供一种环保的硫化橡胶组合物， 表现出优异的破裂特性和低能量损失，以及滚动阻力特性，操纵稳定性和耐久性优异的充气轮胎。

公开(公告)号：US07682975B2

公开(公告)日：2010-03-23

申请号：US11472462

申请日：2006-06-22

申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： H01L21/461 ,  H01L21/4763

CPC分类号： H01L21/76829 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/7684

摘要： A semiconductor device fabricating method includes forming a thin film at a top surface of a substrate; polishing a back surface of said substrate; and after the polishing of the back surface, polishing said thin film as formed at the top surface of said substrate.

摘要翻译： 一种半导体器件制造方法，包括在衬底的顶表面上形成薄膜; 抛光所述衬底的背面; 并且在后表面的抛光之后，在所述基板的顶表面处形成所述薄膜。

公开(公告)号：US20090068840A1

公开(公告)日：2009-03-12

申请号：US12200388

申请日：2008-08-28

申请人： Gaku MINAMIHABA ,  Shunsuke Doi ,  Nobuyuki Kurashima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

发明人： Gaku MINAMIHABA ,  Shunsuke Doi ,  Nobuyuki Kurashima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

IPC分类号： H01L21/304 ,  C09K3/14

CPC分类号： H01L21/3212 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/7682 ,  H01L21/76834

摘要： A polishing liquid is provided, which includes abrasive grains and a surfactant. The abrasive grains contain a first colloidal silica having an average primary particle diameter of 45-80 nm and a second colloidal silica having an average primary particle diameter of 10-25 nm. The weight w1 of the first colloidal silica and the weight w2 of the second colloidal silica satisfy the relationship represented by the following expression 1. 0.63≦w1/(w1+w2)≦0.83  Expression 1

摘要翻译： 提供了包括磨粒和表面活性剂的抛光液。 磨粒含有平均一次粒径为45-80nm的第一胶体二氧化硅和平均一次粒径为10-25nm的第二胶体二氧化硅。 第一胶体二氧化硅的重量w1和第二胶态二氧化硅的重量w2满足下述式1所示的关系。<？在线式描述=“在线式”末端=“铅”≥0.63 <= w1 /（w1 + w2）<= 0.83表达式1 <？in-line-formula description =“In-line Formulas”end =“tail”？>

公开(公告)号：US07402521B2

公开(公告)日：2008-07-22

申请号：US11418070

申请日：2006-05-05

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano

IPC分类号： H01L21/302

CPC分类号： H01L21/31058 ,  B24B37/044 ,  C09G1/00 ,  C09G1/02 ,  H01L27/10867

摘要： There is proposed a polishing method. The method includes feeding a slurry onto a polishing pad, press-contacting a semiconductor substrate held on a polishing head with the polishing pad, the semiconductor substrate having an organic film thereon, and chemically mechanically polishing the organic film by repeating a sequence of rotation and halt of rotation of the polishing pad and the polishing head.

摘要翻译： 提出了抛光方法。 该方法包括将浆料进料到抛光垫上，将保持在抛光头上的半导体衬底与抛光垫压接，半导体衬底上具有有机膜，并通过重复旋转顺序化学机械抛光有机膜， 停止抛光垫和抛光头的旋转。

公开(公告)号：US20080124927A1

公开(公告)日：2008-05-29

申请号：US11980496

申请日：2007-10-31

申请人： Gaku Minamihaba ,  Hiroyuki Yano ,  Nobuyuki Kurashima ,  Susumu Yamamoto

发明人： Gaku Minamihaba ,  Hiroyuki Yano ,  Nobuyuki Kurashima ,  Susumu Yamamoto

IPC分类号： H01L21/44

CPC分类号： H01L21/76834 ,  H01L21/76823 ,  H01L21/76825 ,  H01L21/76849 ,  H01L21/76868 ,  H01L21/76877 ,  H01L21/76886 ,  H01L23/5258 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a first insulating film formed above the semiconductor substrate, Cu wiring buried in the first insulating film, a second insulating film formed above the Cu wiring, and a discontinuous film made of at least one metal selected from the group consisting of Ti, Al, W, Pd, Sn, Ni, Mg and Zn, or a metal oxide thereof and interposed at an interface between the Cu wiring and the second insulating film.

摘要翻译： 公开了一种半导体器件，包括半导体衬底，形成在半导体衬底上的第一绝缘膜，埋在第一绝缘膜中的Cu布线，在Cu布线上方形成的第二绝缘膜，以及由至少一种选择的金属制成的不连续膜 来自由Ti，Al，W，Pd，Sn，Ni，Mg和Zn组成的组或其金属氧化物，并且介于Cu配线和第二绝缘膜之间的界面处。

公开(公告)号：US20070128873A1

公开(公告)日：2007-06-07

申请号：US11561071

申请日：2006-11-17

申请人： Gaku MINAMIHABA ,  Nobuyuki Kurashima ,  Dai Fukushima ,  Yukiteru Matsui ,  Susumu Yamamoto ,  Hiroyuki Yano

发明人： Gaku MINAMIHABA ,  Nobuyuki Kurashima ,  Dai Fukushima ,  Yukiteru Matsui ,  Susumu Yamamoto ,  Hiroyuki Yano

IPC分类号： C09K13/00 ,  H01L21/461 ,  C03C15/00 ,  H01L21/302 ,  B44C1/22

CPC分类号： H01L21/3212 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/7684

摘要： An aqueous dispersion for chemical mechanical polishing is provided, which includes water and a resin particle. The resin particles accompany with a projection having a curvature radius ranging from 10 nm to 1.65 μm on a surface. The maximum length of the resin particles is not more than 5 μm and is 2.5 to 25 times as large as the curvature radius.

摘要翻译： 提供了用于化学机械抛光的水分散体，其包括水和树脂颗粒。 树脂颗粒伴随着表面上具有10nm至1.65μm的曲率半径的突起。 树脂粒子的最大长度为5μm以下，为曲率半径的2.5〜25倍。

公开(公告)号：US20060293191A1

公开(公告)日：2006-12-28

申请号：US11472462

申请日：2006-06-22

申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： H01L39/24

CPC分类号： H01L21/76829 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/7684

摘要： A semiconductor device fabricating method includes forming a thin film at a top surface of a substrate; polishing a back surface of said substrate; and after the polishing of the back surface, polishing said thin film as formed at the top surface of said substrate.

摘要翻译： 一种半导体器件制造方法，包括在衬底的顶表面上形成薄膜; 抛光所述衬底的背面; 并且在后表面的抛光之后，在所述基板的顶表面处形成所述薄膜。

公开(公告)号：US07138073B2

公开(公告)日：2006-11-21

申请号：US10762514

申请日：2004-01-23

申请人： Gaku Minamihaba ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C23F3/00

摘要： A method of manufacturing a semiconductor device using a polishing slurry for CMP of Cu, which includes a first complexing agent containing a heterocyclic compound which is capable of forming a water-insoluble complex with Cu, and a second complexing agent containing a heterocyclic compound which is capable of forming a slightly water-soluble or water-soluble complex with Cu to thereby provide at least one extra ligand subsequent to formation of the complex.

摘要翻译： 使用Cu的CMP研磨用浆料的半导体装置的制造方法，其包括含有能够与Cu形成水不溶性络合物的杂环化合物的第一配位剂和含有杂环化合物的第二络合剂，所述杂环化合物为 能够与Cu形成轻微的水溶性或水溶性络合物，从而在形成络合物后提供至少一种额外的配体。

公开(公告)号：US20060205323A1

公开(公告)日：2006-09-14

申请号：US10539245

申请日：2003-12-26

申请人： Tetsuji Togawa ,  Toshio Watanabe ,  Hiroyuki Yano ,  Gen Toyota ,  Kenji Iwade ,  Yoshikuni Tateyama

发明人： Tetsuji Togawa ,  Toshio Watanabe ,  Hiroyuki Yano ,  Gen Toyota ,  Kenji Iwade ,  Yoshikuni Tateyama

IPC分类号： B24B51/00 ,  B24B29/00 ,  B24B47/02

CPC分类号： B24B37/015 ,  B24B41/061 ,  B24B55/02

摘要： A substrate holding mechanism, a substrate polishing apparatus and a substrate polishing method have functions capable of minimizing the amount of heat generated during polishing of a substrate to be polished and of effectively cooling the substrate holding part of the substrate holding mechanism and also capable of effectively preventing the polishing solution and polishing dust from adhering to the outer peripheral portion of the substrate holding part and drying out thereon. The substrate holding mechanism (top ring 1) has a mounting flange 2, a support member 6, and a retainer ring 3. A substrate W to be polished is held on the lower side of the support member 6 surrounded by the retainer ring 3, and the substrate W is pressed against a polishing surface. The mounting flange 2 is provided with a flow passage 26 contiguous with at least the retainer ring 3. A temperature-controlled gas supplied through the flow passage 26 to cool the mounting flange 2, the support member 6 and the retainer ring 3. The retainer ring 3 is provided with a plurality of through-holes 3a communicating with the flow passage 26 to spray the gas flowing through the flow passage 26 onto the polishing surface of a polishing table.

摘要翻译： 基板保持机构，基板研磨装置和基板研磨方法具有能够使待研磨基板的抛光时产生的热量最小化的功能，并有效地冷却基板保持机构的基板保持部，并且还能够有效地 防止研磨液和研磨粉尘附着在基板保持部的外周部并在其上干燥。 基板保持机构（顶环1）具有安装凸缘2，支撑构件6和保持环3.待被抛光的基板W被保持在由保持环3包围的支撑构件6的下侧， 将基板W压在研磨面上。 安装凸缘2设置有与至少保持环3相邻的流动通道26。 通过流路26提供的温度控制气体，以冷却安装凸缘2，支撑构件6和保持环3。 保持环3设置有与流路26连通的多个通孔3a，以将流过流路26的气体喷射到研磨台的研磨面上。