公开(公告)号：US20060268954A1

公开(公告)日：2006-11-30

申请号：US11461353

申请日：2006-07-31

申请人： Ralph Johnson ,  James Biard ,  James Guenter

发明人： Ralph Johnson ,  James Biard ,  James Guenter

IPC分类号： H01S5/00

CPC分类号： H01S5/18358 ,  B82Y20/00 ,  H01L33/105 ,  H01S5/18311 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/3432

摘要： Light emitting semiconductor devices such as VCSELs, SELs, and LEDs are manufactured to have a thin electrical confinement barrier in a confining layer near the active region of the device. The thin confinement barrier comprises a III-V semiconductor material having a high aluminum content (e.g. 80%-100% of the type III material). The aluminum content of the adjacent spacer layer is lower than that of the confinement barrier. In one embodiment the spacer layer has an aluminum content of less than 40% and a direct bandgap. The aluminum profile reduces series resistance and improves the efficiency of the semiconductor device.

摘要翻译： 制造诸如VCSEL，SEL和LED的发光半导体器件在靠近器件的有源区域的约束层中具有薄的电限制屏障。 薄限制屏障包括具有高铝含量（例如III型材料的80％-100％）的III-V半导体材料。 相邻间隔层的铝含量低于限制屏障的铝含量。 在一个实施方案中，间隔层具有小于40％的铝含量和直接的带隙。 铝型材降低了串联电阻并提高了半导体器件的效率。

公开(公告)号：US20050286586A1

公开(公告)日：2005-12-29

申请号：US11027383

申请日：2004-12-30

申请人： James Guenter ,  Jimmy Tatum ,  James Biard

发明人： James Guenter ,  Jimmy Tatum ,  James Biard

IPC分类号： H01S5/00 ,  H01S5/026 ,  H01S5/183

CPC分类号： H01S5/0264 ,  H01S5/0422 ,  H01S5/18308 ,  H01S5/18313 ,  H01S5/1835 ,  H01S5/18358 ,  H01S5/3095 ,  H01S2301/02

摘要： An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

摘要翻译： 一种降低激光器有源区自发发射效应的光学结构。 光学结构包括优化以减少自发辐射的影响。 光学结构包括具有顶部和底部DBR反射镜的VCSEL和连接到反射镜的有源区域。 光学结构还包括连接到VCSEL的光电二极管。 可以在光学结构中包括一个或多个优化，包括光学吸收材料，改变结构的几何形状以改变反射角度，使用光学孔径，改变一个或多个反射镜的反射率，将光电二极管改变为对自发辐射更为不透明 ，并使用离子注入来降低光致发光效率。

公开(公告)号：US20050230769A1

公开(公告)日：2005-10-20

申请号：US10826746

申请日：2004-04-16

申请人： Wayne Lilian ,  James Biard

发明人： Wayne Lilian ,  James Biard

IPC分类号： G01R33/07 ,  G01N27/72 ,  G01R33/12 ,  H01L29/82

CPC分类号： G01R33/07

摘要： A Hall element is provided with a segmented field plate. Dynamic bias control is applied to the segments of the field plate. In one embodiment, a feedback signal is derived from an amplified output of the Hall element. The feedback signal is applied to the segments of the field plate in order to control sheet conductivity in specific localized areas. In one embodiment, a metal field plate is split into four segments along lines between bias and sense contacts of the Hall element. Opposing diagonal segments are electrically connected.

摘要翻译： 霍尔元件设有分段场板。 动态偏置控制应用于场板的段。 在一个实施例中，从霍尔元件的放大输出导出反馈信号。 反馈信号被施加到场板的段以便控制特定局部区域中的片材导电性。 在一个实施例中，金属场板沿着霍尔元件的偏置和感测触点之间的线分成四个段。 相对的对角线段电连接。

公开(公告)号：US20050018729A1

公开(公告)日：2005-01-27

申请号：US10922028

申请日：2004-08-19

申请人： James Biard ,  James Guenter

发明人： James Biard ,  James Guenter

IPC分类号： H01S5/183 ,  H01S5/20 ,  H01S5/00

CPC分类号： H01S5/18308 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/18358 ,  H01S5/2063

摘要： Optical transmitters are disclosed, one example of which includes a vertical cavity surface emitting laser that includes a substrate upon which a lower mirror is disposed. In this example, a spacer is disposed between the lower mirror and an active region. Another spacer separates the active region and an upper mirror. The upper mirror includes an oxide insulating region that is damaged by ion implantation so that desirable effects are achieved with respect to lateral sheet resistance, and quantum well recombination centers in the active region.

摘要翻译： 公开了光发射器，其一个示例包括垂直腔表面发射激光器，其包括其上设置有下反射镜的衬底。 在该示例中，间隔件设置在下反射镜和有源区域之间。 另一个隔离物分离有源区域和上反射镜。 上反射镜包括通过离子注入而损坏的氧化物绝缘区域，从而在有源区域中获得关于侧向薄层电阻和量子阱复合中心的期望效果。

公开(公告)号：US20060146904A1

公开(公告)日：2006-07-06

申请号：US11026699

申请日：2004-12-30

申请人： James Guenter ,  James Biard

发明人： James Guenter ,  James Biard

IPC分类号： H01S5/00

CPC分类号： H01S5/0425 ,  H01L27/15 ,  H01S5/0264 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18358

摘要： Optoelectronic device including integrated light emitting device and photodiode. The optoelectronic device includes a light emitting, device such as a vertical cavity surface emitting laser (VCSEL) or resonant cavity light emitting diode (RCLED). A photodiode is also included in the optoelectronic device. Between the light emitting device and the photodiode is a transition region. At least part of the transition region is shorted. A metal contact provides a contact to both the light emitting device and the photodiode.

摘要翻译： 光电器件包括集成发光器件和光电二极管。 光电子器件包括诸如垂直腔表面发射激光器（VCSEL）或谐振腔发光二极管（RCLED）的发光器件。 光电二极管也包括在光电器件中。 在发光器件和光电二极管之间是过渡区域。 至少部分过渡区域短路。 金属触点提供与发光器件和光电二极管的接触。

公开(公告)号：US20060097337A1

公开(公告)日：2006-05-11

申请号：US10486661

申请日：2002-08-12

申请人： Michael Haji-Sheikh ,  James Biard ,  Simon Rabinovich ,  James Guenter ,  Bobby Hawkins

发明人： Michael Haji-Sheikh ,  James Biard ,  Simon Rabinovich ,  James Guenter ,  Bobby Hawkins

IPC分类号： H01L31/06

CPC分类号： G01R31/2874 ,  H01S5/0021 ,  H01S5/02461 ,  H01S5/183

摘要： Methods of conducting wafer level burn-in (WLBI) of semiconductor devices are presented wherein systems are provided having at least two electrodes (210, 215). Electrical bias (920) and/or thermal power (925) is applied on each side of a wafer (100) having back and front electrical contacts for semiconductor devices borne by the wafer. A pliable conductive layer (910) is described for supplying pins on the device side of a wafer with electrical contact and/or also for providing protection to the wafer from mechanical pressure being applied to its surfaces. Use of a cooling system (950) is also described for enabling the application of a uniform temperature to a wafer undergoing burn-in. Wafer level burn-in is performed by applying electrical and physical contact (915) using an upper contact plate to individual contacts for the semiconductor devices; applying electrical and physical contact using a lower contact plate (910) to a substrate surface of said semiconductor wafer; providing electrical power (920) to said semiconductor devices through said upper and lower second contact plates from a power source coupled to said upper and lower contacts plates; monitoring and controlling electrical power (935) to said semiconductor devices for a period in accordance with a specified burn-in criteria; removing electrical power at completion of said period (955); and removing electrical and physical contact to said semiconductor wafer (965).

摘要翻译： 提供了进行半导体器件的晶片级老化（WLBI）的方法，其中提供具有至少两个电极（210,215）的系统。 电晶体（920）和/或热功率（925）施加在具有由晶片承载的半导体器件的背面和前部电触头的晶片（100）的每一侧上。 描述了一种柔性导电层（910），用于在具有电接触的晶片的器件侧上提供引脚和/或用于为施加到其表面的机械压力提供对晶片的保护。 还描述了使用冷却系统（950），以使得能够对经历老化的晶片施加均匀的温度。 通过使用上接触板向半导体器件的单个触点施加电和物理接触（915）来执行晶片级老化; 使用下接触板（910）将电和物理接触施加到所述半导体晶片的衬底表面; 通过所述上和下第二接触板从耦合到所述上和下接触板的电源向所述半导体器件提供电力（920）; 根据指定的老化标准对所述半导体器件监控和控制电力（935）一段时间; 在所述期间完成时移除电力（955）; 以及去除与所述半导体晶片（965）的电和物理接触。

公开(公告)号：US20060072640A1

公开(公告)日：2006-04-06

申请号：US11224615

申请日：2005-09-12

申请人： Ralph Johnson ,  R. Penner ,  James Biard ,  Colby Fitzgerald

发明人： Ralph Johnson ,  R. Penner ,  James Biard ,  Colby Fitzgerald

IPC分类号： H01S5/00

CPC分类号： H01S5/18308 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/305

摘要： A VCSEL with undoped mirrors. An essentially undoped bottom DBR mirror is formed on a substrate. A periodically doped first conduction layer region is formed on the bottom DBR mirror. The first conduction layer region is heavily doped at a location where the optical electric field is at about a minimum. An active layer, including quantum wells, is on the first conduction layer region. A periodically doped second conduction layer region is connected to the active layer. The second conduction layer region is heavily doped where the optical electric field is at a minimum. An aperture is formed in the epitaxial structure above the quantum wells. A top mirror coupled to the periodically doped second conduction layer region. The top mirror is essentially undoped and formed in a mesa structure. An oxide is formed around the mesa structure to protect the top mirror during wet oxidation processes.

摘要翻译： 具有未掺杂镜像的VCSEL。 在基板上形成基本上未掺杂的底部DBR反射镜。 在底部DBR反射镜上形成周期性掺杂的第一导电层区域。 第一导电层区域在光电场处于最小值的位置处被重掺杂。 包括量子阱的有源层在第一导电层区域上。 周期性掺杂的第二导电层区域连接到有源层。 第二导电层区域是重掺杂的，其中光电场处于最小。 在量子阱上方的外延结构中形成孔径。 耦合到周期性掺杂的第二导电层区域的上反射镜。 顶部镜子基本上是未掺杂的并且形成在台面结构中。 在台面结构周围形成氧化物，以在湿式氧化过程中保护顶镜。

公开(公告)号：US20060072639A1

公开(公告)日：2006-04-06

申请号：US11222433

申请日：2005-09-08

申请人： Ralph Johnson ,  R. Penner ,  James Biard

发明人： Ralph Johnson ,  R. Penner ,  James Biard

IPC分类号： H01S5/00

CPC分类号： H01S5/18308 ,  H01S5/18313 ,  H01S5/1833 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/2086 ,  H01S5/3095 ,  H01S5/3211

摘要： A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate. A doped bottom mirror is formed on the substrate. An active layer that includes quantum wells is formed on the bottom mirror. A periodically doped conduction layer is formed on the active layer. The periodically doped conduction layer is heavily doped at locations where the optical energy is at a minimum when the VCSEL is in operation. A current aperture is used between the conduction layer and the active region. An undoped top mirror is formed on the heavily doped conduction layer.

摘要翻译： 具有未掺杂顶镜的VCSEL。 VCSEL由沉积在衬底上的外延结构形成。 在衬底上形成掺杂的底镜。 在底部反射镜上形成包括量子阱的有源层。 在有源层上形成周期性掺杂的导电层。 周期性掺杂的导电层在VCSEL工作时光能量最小的位置被重掺杂。 在导电层和有源区之间使用电流孔。 在重掺杂导电层上形成未掺杂的顶部反射镜。

公开(公告)号：US20070264805A1

公开(公告)日：2007-11-15

申请号：US11778603

申请日：2007-07-16

申请人： James Guenter ,  James Biard

发明人： James Guenter ,  James Biard

IPC分类号： H01L21/20

CPC分类号： H01S5/0425 ,  H01L27/15 ,  H01S5/0264 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18358

摘要： Optoelectronic device including integrated light emitting device and photodiode. The optoelectronic device includes a light emitting device such as a vertical cavity surface emitting laser (VCSEL) or resonant cavity light emitting diode (RCLED). A photodiode is also included in the optoelectronic device. Between the light emitting device and the photodiode is a transition region. At least part of the transition region is shorted. A metal contact provides a contact to both the light emitting device and the photodiode.

摘要翻译： 光电器件包括集成发光器件和光电二极管。 光电子器件包括诸如垂直腔表面发射激光器（VCSEL）或谐振腔发光二极管（RCLED）的发光器件。 光电二极管也包括在光电器件中。 在发光器件和光电二极管之间是过渡区域。 至少部分过渡区域短路。 金属触点提供与发光器件和光电二极管的接触。

公开(公告)号：US20060157809A1

公开(公告)日：2006-07-20

申请号：US11038881

申请日：2005-01-20

申请人： Yousef Alimi ,  James Biard ,  Gilberto Morales

发明人： Yousef Alimi ,  James Biard ,  Gilberto Morales

IPC分类号： H01L43/00 ,  H01L29/82

CPC分类号： H01L43/065 ,  G01R33/077

摘要： A vertical Hall effect apparatus, including methods thereof. A substrate layer can be provided upon which an epitaxial layer is formed. The epitaxial layer is surrounded vertically by one or more isolation layers. Additionally, an oxide layer can be formed above the epitaxial layer. A plurality of Hall effect elements can be formed within the epitaxial layer(s) and below the oxide layer, wherein the Hall effect elements sense the components of an arbitrary magnetic field in the plane of the wafer and perpendicular to the current flow in the hall element. A plurality of field plates can be formed above the oxide layer to control the inherited offset due to geometry control and processing of the vertical Hall effect apparatus, while preventing the formation of an output voltage of the vertical Hall effect apparatus at zero magnetic fields thereof.

摘要翻译： 一种垂直霍尔效应装置，包括其方法。 可以提供形成外延层的衬底层。 外延层被一个或多个隔离层垂直包围。 另外，可以在外延层的上方形成氧化物层。 多个霍尔效应元件可以形成在外延层内并在氧化物层的下面，其中霍尔效应元件感测晶片平面中任意磁场的分量，并垂直于霍尔电流中的电流 元件。 可以在氧化物层上方形成多个场板，以控制由于垂直霍尔效应装置的几何形状控制和处理而导致的遗传偏移，同时防止垂直霍尔效应装置的输出电压在其零磁场下形成。