公开(公告)号：US20090298214A1

公开(公告)日：2009-12-03

申请号：US12263873

申请日：2008-11-03

Applicant: Ho Sun Paek ,  Sung Nam Lee ,  Jeong Wook Lee ,  Il Hyung Jung ,  Youn Joon Sung

Inventor： Ho Sun Paek ,  Sung Nam Lee ,  Jeong Wook Lee ,  Il Hyung Jung ,  Youn Joon Sung

IPC: H01L33/00 ,  H01L21/205

CPC classification number: H01L33/007 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02639 ,  H01L33/08 ,  H01L33/12

Abstract: There is provided a method of growing a nitride single crystal. A method of growing a nitride single crystal according to an aspect of the invention may include: growing a first nitride single crystal layer on a substrate; forming a dielectric pattern having an open area on the first nitride single crystal layer, the open area exposing a part of an upper surface of the first nitride single crystal layer; and growing a second nitride single crystal layer on the first nitride single crystal layer through the open area while the second nitride single crystal layer grows to be equal to or larger than a height of the dielectric pattern, wherein the height of the dielectric pattern is greater than a width of the open area so that dislocations in the second nitride single crystal layer move laterally, collide with side walls of the dielectric pattern, and are terminated.

Abstract translation: 提供了生长氮化物单晶的方法。 根据本发明的一个方面的生长氮化物单晶的方法可以包括：在衬底上生长第一氮化物单晶层; 在所述第一氮化物单晶层上形成具有开放区域的电介质图案，所述开放区域露出所述第一氮化物单晶层的上表面的一部分; 以及通过所述开放区域在所述第一氮化物单晶层上生长第二氮化物单晶层，而所述第二氮化物单晶层生长至等于或大于所述电介质图案的高度，其中所述电介质图案的高度较大 比第二氮化物单晶层的位错横向移动，与介质图案的侧壁碰撞而终止。

公开(公告)号：US20090181484A1

公开(公告)日：2009-07-16

申请号：US12407361

申请日：2009-03-19

Applicant: Jeong-wook LEE ,  Youn-joon SUNG ,  Ho-sun PAEK ,  Hyun-soo KIM ,  Joo-sung KIM ,  Suk-ho YOON

Inventor： Jeong-wook LEE ,  Youn-joon SUNG ,  Ho-sun PAEK ,  Hyun-soo KIM ,  Joo-sung KIM ,  Suk-ho YOON

IPC: H01L21/28

CPC classification number: H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/22

Abstract: Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.

Abstract translation: 提供了具有纳米图案的半导体发光器件和制造半导体发光器件的方法。 半导体发光器件包括：包含多个纳米图案的半导体层，其中所述多个纳米图案形成在所述半导体层的内部; 以及形成在半导体层上的有源层。 光输出效率增加，半导体发光器件的内部缺陷减小。

公开(公告)号：US07470938B2

公开(公告)日：2008-12-30

申请号：US10983637

申请日：2004-11-09

Applicant: Jae Hoon Lee ,  Jeong Wook Lee ,  Hyun Kyung Kim ,  Yong Chun Kim

Inventor： Jae Hoon Lee ,  Jeong Wook Lee ,  Hyun Kyung Kim ,  Yong Chun Kim

IPC: H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/24 ,  H01L33/00 ,  H01L29/22 ,  H01L21/00

CPC classification number: H01L33/32 ,  H01L33/007 ,  H01L33/22 ,  Y10S257/918

Abstract: In a nitride semiconductor light emitting device having patterns formed on the upper and lower surfaces of a substrate from which light is emitted in a flip chip bonding structure, the patterns are capable of changing light inclination at the upper and lower surfaces of the substrate to decrease total reflection at the interfaces, thereby improving light emitting efficiency. The device includes a substrate having upper and lower surfaces on which predetermined patterns are formed such that light can be incident within a critical angle, the substrate allowing a gallium nitride-based semiconductor material to be grown thereon, an n-type nitride semiconductor layer formed on the upper surface of the substrate, an active layer formed on the upper surface of the n-type nitride semiconductor layer such that the n-type nitride semiconductor layer is partially exposed, a p-type nitride semiconductor layer formed on the upper surface of the active layer, a p-electrode formed on the upper surface of the p-type nitride semiconductor layer, and an n-side electrode formed on the partially exposed n-type nitride semiconductor layer.

Abstract translation: 在具有形成在基板的上表面和下表面上的图案的氮化物半导体发光器件中，以倒装芯片接合结构发射光，该图案能够改变在基板的上表面和下表面处的光倾斜度 在界面处的全反射，从而提高发光效率。 该装置包括具有上表面和下表面的基板，预定图案形成在其上，使得光可以临界角入射，所述基板允许在其上生长氮化镓基半导体材料，形成n型氮化物半导体层 在所述基板的上表面上形成有在n型氮化物半导体层的上表面上形成的n型氮化物半导体层被部分露出的有源层，形成在所述n型氮化物半导体层的上表面上的p型氮化物半导体层 有源层，形成在p型氮化物半导体层的上表面上的p电极和形成在部分暴露的n型氮化物半导体层上的n侧电极。

公开(公告)号：US20070183466A1

公开(公告)日：2007-08-09

申请号：US11513224

申请日：2006-08-31

Applicant: Joong-kon Son ,  Jeong-wook Lee ,  Ho-sun Paek ,  Sung-nam Lee ,  Tan Sakong

Inventor： Joong-kon Son ,  Jeong-wook Lee ,  Ho-sun Paek ,  Sung-nam Lee ,  Tan Sakong

IPC: H01S3/10 ,  H01S3/00

CPC classification number: H04N9/3129

Abstract: A laser display device is provided which includes: a light source emitting at least one laser beam; a light modulation unit for modulating the laser beam emitted from the light source according to an image signal; a scanning unit scanning the laser beam modulated in the light modulation unit in a main scanning direction and in a sub-scanning direction; and an image unit in which an image is formed having a phosphor layer in which excitation light is generated by a laser beam scanned by the scanning unit.

Abstract translation: 提供了一种激光显示装置，其包括：发射至少一个激光束的光源; 光调制单元，用于根据图像信号调制从光源发射的激光束; 扫描单元沿主扫描方向和副扫描方向扫描在调光单元中调制的激光束; 以及其中形成有图像的图像单元，其具有通过由扫描单元扫描的激光束产生激发光的荧光体层。

公开(公告)号：US20070145386A1

公开(公告)日：2007-06-28

申请号：US11705736

申请日：2007-02-14

Applicant: Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

Inventor： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

IPC: H01L33/00

CPC classification number: H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/22

Abstract: Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.

Abstract translation: 提供了具有纳米图案的半导体发光器件和制造半导体发光器件的方法。 半导体发光器件包括：包含多个纳米图案的半导体层，其中所述多个纳米图案形成在所述半导体层的内部; 以及形成在半导体层上的有源层。 光输出效率增加，半导体发光器件的内部缺陷减小。

公开(公告)号：US20060157719A1

公开(公告)日：2006-07-20

申请号：US11320811

申请日：2005-12-30

Applicant: Joon-seop Kwak ,  Jeong-wook Lee

Inventor： Joon-seop Kwak ,  Jeong-wook Lee

IPC: H01L33/00

CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/12

Abstract: A semiconductor light emitting diode having a textured structure and a method of manufacturing the semiconductor light emitting diode are provided. The method includes forming a first semiconductor layer on a substrate; forming a textured structured first semiconductor layer by penetrating a material of a material layer into the first semiconductor layer after the material layer is formed on the first semiconductor layer and is annealed; and forming a second semiconductor layer on the first semiconductor layer.

公开(公告)号：US08840265B2

公开(公告)日：2014-09-23

申请号：US13099972

申请日：2011-05-03

Applicant: Kyung-mi Moon ,  Young-hee Song ,  Ill-heung Choi ,  Jeong-wook Lee ,  Young-jin Lee

Inventor： Kyung-mi Moon ,  Young-hee Song ,  Ill-heung Choi ,  Jeong-wook Lee ,  Young-jin Lee

IPC: F21S4/00 ,  F21K99/00 ,  F21V29/00 ,  F21V23/06

CPC classification number: F21V23/06 ,  F21K9/275 ,  F21V29/507 ,  F21V29/83 ,  F21Y2103/10 ,  F21Y2115/10 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An illumination apparatus includes a light source unit comprising at least one light source module comprising a plurality of light-emitting device chips and a lead frame on which the light-emitting device chips are mounted and which connects the mounted light-emitting device chips; a diffusion cover having an interior space in which the light source module is accommodated and diffusing light emitted from the light source module; and an installation portion formed adjacent to the diffusion cover to install the light source module.

Abstract translation: 一种照明装置，包括：光源单元，包括至少一个光源模块，所述至少一个光源模块包括多个发光器件芯片和引导框架，所述引线框架安装有所述发光器件芯片，并且连接所安装的发光器件芯片; 扩散盖，其具有容纳光源模块的内部空间和从光源模块发射的光; 以及与扩散罩相邻形成的安装部，以安装光源模块。

公开(公告)号：US20140160728A1

公开(公告)日：2014-06-12

申请号：US14236775

申请日：2011-08-17

Applicant: Hyung Kun Kim ,  Suk Ho Chung ,  Ho Sun Paek ,  Jeong Wook Lee

Inventor： Hyung Kun Kim ,  Suk Ho Chung ,  Ho Sun Paek ,  Jeong Wook Lee

IPC: F21K99/00

CPC classification number: F21V9/30 ,  F21K9/64 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/507 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to a light emitting apparatus. According to one aspect of the present invention, the light emitting device comprises: a plurality of light emitting devices including a blue light emitting device emitting blue light and a UV light emitting device emitting ultraviolet light; and a wavelength conversion part arranged in the path of the light emitted from the plurality of light emitting devices, and provided with fluorescent substances to convert the wavelengths of the light emitted from the plurality of light emitting devices, wherein a fluorescent substance excited by and mixed with the blue light to obtain white light is arranged on a first area corresponding to the blue light emitting device, and at least a blue fluorescent substance is arranged on a second area corresponding to the UV light emitting device. When the light emitting apparatus according to the present invention is used, a combination of the light sources and the fluorescent substances within one module may be appropriately adopted to obtain both improved luminous efficacy and white light having a high color rendering index.

Abstract translation: 本发明涉及一种发光装置。 根据本发明的一个方面，发光器件包括：多个发光器件，包括发射蓝光的蓝色发光器件和发射紫外光的UV发光器件; 以及布置在从所述多个发光器件发射的光的路径中的波长转换部分，并且设置有用于转换从所述多个发光器件发射的光的波长的荧光物质，其中由所述多个发光器件激发和混合的荧光物质 在对应于蓝色发光器件的第一区域上布置有获得白光的蓝色光，并且至少一个蓝色荧光物质被布置在与UV发光器件对应的第二区域上。 当使用根据本发明的发光装置时，可以适当地采用一个模块内的光源和荧光物质的组合以获得改进的发光效率和具有高显色指数的白光。

公开(公告)号：US20130217087A1

公开(公告)日：2013-08-22

申请号：US13819339

申请日：2011-08-30

Applicant: Sang Yup Lee ,  Jeong Wook Lee ,  Sol Choi ,  Jongho Yi

Inventor： Sang Yup Lee ,  Jeong Wook Lee ,  Sol Choi ,  Jongho Yi

IPC: C12P7/46

CPC classification number: C12P7/46 ,  C12N1/20 ,  C12N15/52 ,  C12R1/01

Abstract: The present invention relates to a succinic acid-producing mutant microorganism that is able to utilize sucrose and glycerol simultaneously as carbon sources. More particularly, the present invention relates to a succinic acid-producing mutant microorganism that is able to utilize sucrose and glycerol simultaneously for succinic acid production, the mutant organism being obtained by relieving the mechanism of sucrose-mediated catabolite repression of glycerol in a succinic acid-producing microorganism.As described above, when the succinic acid-producing mutant microorganism is cultured, it utilizes sucrose and glycerol simultaneously so that succinic acid can be produced with high productivity in a maximum yield approaching the theoretical yield while the production of byproducts is minimized. In addition, according to the present invention, various reduced chemicals which have been produced in low yields in conventional methods can be more effectively produced.

Abstract translation: 本发明涉及能够同时使用蔗糖和甘油作为碳源的产琥珀酸突变体微生物。 更具体地，本发明涉及能够同时使用蔗糖和甘油进行琥珀酸生产的产琥珀酸的突变体微生物，其通过减轻甘油在琥珀酸中的蔗糖介导的分解代谢物抑制的机制而获得 生产微生物。 如上所述，当培养产琥珀酸的突变体微生物时，它同时使用蔗糖和甘油，使得以最大产率接近理论产率的高生产率生产琥珀酸，同时副产物的产生最小化。 此外，根据本发明，可以更有效地制造在常规方法中以低收率生产的各种还原化学品。

公开(公告)号：US20120231499A1

公开(公告)日：2012-09-13

申请号：US13124818

申请日：2011-03-11

Applicant: Sang Yup Lee ,  Xiaoxia Xia ,  Zhi Gang Qian ,  Jeong Wook Lee ,  Young Hwan Park

Inventor： Sang Yup Lee ,  Xiaoxia Xia ,  Zhi Gang Qian ,  Jeong Wook Lee ,  Young Hwan Park

IPC: C12P21/02 ,  D01D5/06 ,  C07K14/00

CPC classification number: C07K14/43518 ,  D01D5/0007 ,  D01D5/06 ,  D01F4/02

Abstract: A high-molecular-weight recombinant silk or silk-like protein having a molecular weight which is substantially similar to that of native silk protein, and a micro- or nano-sized spider silk or silk-like fiber having improved physical properties, produced therefrom. The recombinant silk or silk-like protein according to the invention has high molecular weight, like dragline silk proteins from spiders, while a fiber produced therefrom has excellent physical properties compared to a fiber produced from native silk protein. Thus, the recombinant silk or silk-like protein and the spider silk or silk-like fiber produced therefrom will be highly useful in various industrial applications, including bioengineering applications and medical applications.

Abstract translation: 具有与天然丝蛋白基本相似的分子量的高分子量重组丝或丝状蛋白质，以及由其制备的具有改善的物理性质的微米或纳米尺寸的蜘蛛丝或丝状纤维 。 根据本发明的重组丝或丝状蛋白具有高分子量，如来自蜘蛛的拉丝丝蛋白，而由其制备的纤维与由天然丝蛋白产生的纤维相比具有优异的物理性能。 因此，重组丝或丝状蛋白质以及由其生产的蜘蛛丝或丝状纤维在各种工业应用中非常有用，包括生物工程应用和医疗应用。