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    Semiconductor laser structure including quantum dot
    13.
    发明授权
    Semiconductor laser structure including quantum dot 有权
    半导体激光器结构包括量子点

    公开(公告)号：US07606284B2

    公开(公告)日：2009-10-20

    申请号：US11595470

    申请日：2006-11-09

    Applicant: Dae Kon Oh ,  Jin Hong Lee ,  Jin Soo Kim ,  Sung Ui Hong ,  Ho Sang Kwack

    Inventor： Dae Kon Oh ,  Jin Hong Lee ,  Jin Soo Kim ,  Sung Ui Hong ,  Ho Sang Kwack

    IPC: H01S3/08

    CPC classification number: H01S5/12 ,  H01S5/1231 ,  H01S5/1243 ,  H01S5/22

    Abstract: Provided is a distributed feedback semiconductor laser structure including: a first clad layer; a first ridge waveguide formed on the first clad layer; an active layer formed on the first ridge waveguide; a second ridge waveguide formed on the active layer; a second clad layer formed on the second ridge waveguide; an ohmic contact layer formed on the second clad layer; and a plurality of gratings formed in at least one of the first and second clad layers, making a predetermined angle with the first ridge waveguide or the second ridge waveguide, and periodically arranged in a longitudinal direction of the first or second ridge waveguide. As a result, a general hologram lithography process capable of mass production is applied to the present invention so that process time can be reduced. Also, a distributed feedback semiconductor laser structure using a quantum-dot active layer that does not require an additional process for obtaining a pure single-wavelength is provided.

    Abstract translation: 提供一种分布式反馈半导体激光器结构，包括：第一覆层; 形成在第一覆盖层上的第一脊状波导; 形成在第一脊波导上的有源层; 形成在有源层上的第二脊状波导; 形成在第二脊波导上的第二覆层; 形成在所述第二覆盖层上的欧姆接触层; 以及形成在所述第一和第二包层中的至少一个中的多个光栅，与所述第一脊波导或所述第二脊波导成预定的角度，并且沿所述第一或第二脊波导的纵向方向周期性地布置。 结果，能够大量生产的一般的全息图光刻工艺被应用于本发明，从而可以减少处理时间。 此外，提供了使用量子点有源层的分布式反馈半导体激光器结构，其不需要用于获得纯单波长的附加工艺。

    SELF-OSCILLATION COMMUNICATION MODULE
    14.
    发明申请
    SELF-OSCILLATION COMMUNICATION MODULE 有权
    自振振荡通信模块

    公开(公告)号：US20090223565A1

    公开(公告)日：2009-09-10

    申请号：US11720933

    申请日：2005-12-07

    Applicant: Dae-Kon Oh ,  Jin-Hong Lee ,  Jin-Soo Kim ,  Sung-Ui Hong ,  Byung-Seok Choi

    Inventor： Dae-Kon Oh ,  Jin-Hong Lee ,  Jin-Soo Kim ,  Sung-Ui Hong ,  Byung-Seok Choi

    IPC: H01L31/0264 ,  H01S5/343

    CPC classification number: H04B10/40

    Abstract: Provided is a self-oscillation communication module in which an optical device, a solar battery, and a radio frequency (RF) device are monolithic-integrated. When an active layer of the optical device contains In(Ga)As quantum dots, the optical device can emit light ranging from 800 to 1600 nm and transmit signals at a high speed of 20 Gbps or higher. Since a light absorption layer of the solar battery is formed of InGa(Al)P which has a higher bandgap than silicon and high visible light absorptivity, the solar battery can generate a large current even with a very small light reception area. Therefore, the self-oscillation communication module can always operate using the solar battery without an external power source even in polar regions and deserts and can perform optical communication or high-frequency wireless communication with a wide frequency range.

    Abstract translation: 提供了一种自振荡通信模块，其中光学装置，太阳能电池和射频（RF）装置是单片集成的。 当光学器件的有源层包含In（Ga）As量子点时，光学器件可以发射800至1600nm的光并以20Gbps或更高的高速传输信号。 由于太阳能电池的光吸收层由具有比硅更高的带隙和高可见光吸收率的InGa（Al）P形成，所以即使具有非常小的光接收面积，太阳能电池也可以产生大电流。 因此，即使在极地区域和沙漠中，自振荡通信模块也可以始终使用没有外部电源的太阳能电池进行操作，并且可以在宽频率范围内进行光通信或高频无线通信。

    Semiconductor laser structure including quantum dot
    15.
    发明申请
    Semiconductor laser structure including quantum dot 有权
    半导体激光器结构包括量子点

    公开(公告)号：US20070133639A1

    公开(公告)日：2007-06-14

    申请号：US11595470

    申请日：2006-11-09

    Applicant: Dae Kon Oh ,  Jin Hong Lee ,  Jin Soo Kim ,  Sung Ui Hong ,  Ho Sang Kwack

    Inventor： Dae Kon Oh ,  Jin Hong Lee ,  Jin Soo Kim ,  Sung Ui Hong ,  Ho Sang Kwack

    IPC: H01S5/00

    CPC classification number: H01S5/12 ,  H01S5/1231 ,  H01S5/1243 ,  H01S5/22

    Abstract: Provided is a distributed feedback semiconductor laser structure including: a first clad layer; a first ridge waveguide formed on the first clad layer; an active layer formed on the first ridge waveguide; a second ridge waveguide formed on the active layer; a second clad layer formed on the second ridge waveguide; an ohmic contact layer formed on the second clad layer; and a plurality of gratings formed in at least one of the first and second clad layers, making a predetermined angle with the first ridge waveguide or the second ridge waveguide, and periodically arranged in a longitudinal direction of the first or second ridge waveguide. As a result, a general hologram lithography process capable of mass production is applied to the present invention so that process time can be reduced. Also, a distributed feedback semiconductor laser structure using a quantum-dot active layer that does not require an additional process for obtaining a pure single-wavelength is provided.

    Abstract translation: 提供一种分布式反馈半导体激光器结构，包括：第一覆层; 形成在第一覆盖层上的第一脊状波导; 形成在第一脊波导上的有源层; 形成在有源层上的第二脊形波导; 形成在第二脊波导上的第二覆层; 形成在所述第二覆盖层上的欧姆接触层; 以及形成在所述第一和第二包层中的至少一个中的多个光栅，与所述第一脊波导或所述第二脊波导成预定的角度，并且沿所述第一或第二脊波导的纵向方向周期性地布置。 结果，能够大量生产的一般的全息图光刻工艺被应用于本发明，从而可以减少处理时间。 此外，提供了使用量子点有源层的分布式反馈半导体激光器结构，其不需要用于获得纯单波长的附加工艺。

    Method for forming poly metal gate
    16.
    发明授权
    Method for forming poly metal gate 有权
    多金属浇口形成方法

    公开(公告)号：US06277722B1

    公开(公告)日：2001-08-21

    申请号：US09594896

    申请日：2000-06-15

    Applicant: Sang Moo Lee ,  Jin Hong Lee

    Inventor： Sang Moo Lee ,  Jin Hong Lee

    IPC: H01L21336

    CPC classification number: H01L21/28061 ,  H01L21/28247

    Abstract: A method for forming a poly metal gate, comprising the steps of: providing a substrate where a gate oxide is formed; forming a polysilicon film, a barrier metal, a refractory metal film and a hard mask over the gate oxide; patterning the hard mask, the refractory metal film, the barrier metal and the polysilicon film to form a gate metal gate; forming a capping layer for oxidation prevention over the gate oxide to cover the poly metal gate; etching the capping layer for oxidation prevention to remain in sidewalls of the poly metal gate; carrying out a heat treatment using a H2 gas to cover a damage of the capping layer for oxidation prevention in the capping layer etching step; and carrying out a reoxidation process to recover a damage caused in the etching step for the formation of the poly metal gate and improve reliability of the gate oxide.

    Abstract translation: 一种形成多金属栅极的方法，包括以下步骤：提供形成栅极氧化物的衬底; 在栅极氧化物上形成多晶硅膜，阻挡金属，难熔金属膜和硬掩模; 图案化硬掩模，难熔金属膜，阻挡金属和多晶硅膜以形成栅极金属栅极; 在所述栅极氧化物上形成用于氧化防止的覆盖层以覆盖所述多晶金属栅极; 蚀刻封盖层以防止氧化以保留在多金属栅极的侧壁中; 在覆盖层蚀刻工序中，使用H 2气体进行热处理，以覆盖覆盖层的氧化防止损伤; 并进行再氧化处理，以回收在用于形成多金属栅极的蚀刻步骤中引起的损伤并提高栅极氧化物的可靠性。

    Method of measuring doping characteristic of compound semiconductor in real time
    17.
    发明授权
    Method of measuring doping characteristic of compound semiconductor in real time 失效
    实时测量化合物半导体掺杂特性的方法

    公开(公告)号：US5705403A

    公开(公告)日：1998-01-06

    申请号：US696092

    申请日：1996-08-13

    Applicant: Jong-Hyeob Baek ,  Bun Lee ,  Jin-Hong Lee ,  Sung-Woo Choi

    Inventor： Jong-Hyeob Baek ,  Bun Lee ,  Jin-Hong Lee ,  Sung-Woo Choi

    IPC: G01N21/17 ,  G01N21/31 ,  H01L21/205 ,  H01L21/66 ,  H01L33/30 ,  H01L21/00

    CPC classification number: H01L21/02579 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/0262

    Abstract: A method of sensing the concentration of a doped impurity on a semiconductor in real time and a method of sensing the change of its growth rate dependent on time among the changes of the growing conditions due to doping by using a real time analysis apparatus in growing a heterostructured semiconductor by a MOCVD method. A reflecting signal during the growth by means of a real time analysis apparatus has a periodic property, an amplitude change of a reflecting signal is dependent on an absorption coefficient when an absorption exists on an epitaxial layer, an impurity concentration can be obtained by using the relation of an absorption coefficient and an impurity concentration. In addition, if each peak is independently analyzed, the respective growth rate dependent on time are measured individually, so that the reduced growth rate dependent on time of the growth rate is sensed in a carbon doped AlAs layer.

    Abstract translation: 一种实时检测半导体掺杂杂质的浓度的方法，以及在生长中使用实时分析装置时由于掺杂而引起的生长条件变化之间的随时间的变化而检测其生长速度变化的方法 通过MOCVD方法的异质结构半导体。 通过实时分析装置生长期间的反射信号具有周期性质，当在外延层上存在吸收时，反射信号的振幅变化取决于吸收系数，可以通过使用 吸收系数与杂质浓度的关系。 另外，如果独立地分析每个峰，则分别测量相应于时间的生长速率，从而在碳掺杂的AlAs层中感测到依赖于生长速率的时间的降低的生长速率。

    Quantum dot laser diode and method of fabricating the same
    19.
    发明申请
    Quantum dot laser diode and method of fabricating the same 审中-公开
    量子点激光二极管及其制造方法

    公开(公告)号：US20100260223A1

    公开(公告)日：2010-10-14

    申请号：US11633201

    申请日：2006-12-04

    Applicant: Jin Soo Kim ,  Jin Hong Lee ,  Sung Ui Hong ,  Ho Sang Kwack ,  Byung Seok Choi ,  Dae Kon Oh

    Inventor： Jin Soo Kim ,  Jin Hong Lee ,  Sung Ui Hong ,  Ho Sang Kwack ,  Byung Seok Choi ,  Dae Kon Oh

    IPC: H01S5/343 ,  H01L33/02

    CPC classification number: H01S5/341 ,  B82Y20/00 ,  H01S5/3403 ,  H01S5/3412 ,  H01S5/34306 ,  H01S2304/00

    Abstract: A quantum dot laser diode and a method of fabricating the same are provided. The quantum dot laser diode includes: a first clad layer formed on an InP substrate; a first lattice-matched layer formed on the first clad layer; an active layer formed on the first lattice-matched layer, and including at least one quantum dot layer formed of an InAlAs quantum dot or an InGaPAs quantum dot which is grown by an alternate growth method; a second lattice-matched layer formed on the active layer; a second clad layer formed on the second lattice-matched layer, and an ohmic contact layer formed on the second clad layer.

    Abstract translation: 提供了一种量子点激光二极管及其制造方法。 量子点激光二极管包括：形成在InP衬底上的第一覆层; 形成在第一覆盖层上的第一晶格匹配层; 形成在第一晶格匹配层上的活性层，并且包括由交替生长法生长的InAlAs量子点或InGaPAs量子点形成的至少一个量子点层; 形成在所述有源层上的第二晶格匹配层; 形成在第二晶格匹配层上的第二覆盖层和形成在第二覆盖层上的欧姆接触层。

    Surface-emitting laser device
    20.
    发明授权
    Surface-emitting laser device 失效
    表面发射激光器件

    公开(公告)号：US5883911A

    公开(公告)日：1999-03-16

    申请号：US742160

    申请日：1996-11-01

    Applicant: Bun Lee ,  Jong-Hyeob Baek ,  Sung-Woo Choi ,  Jin-Hong Lee

    Inventor： Bun Lee ,  Jong-Hyeob Baek ,  Sung-Woo Choi ,  Jin-Hong Lee

    IPC: H01S3/00 ,  H01S5/183 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

    CPC classification number: B82Y20/00 ,  H01S5/183 ,  H01S2301/173 ,  H01S5/1053 ,  H01S5/18319 ,  H01S5/3205 ,  H01S5/3215 ,  H01S5/3406 ,  H01S5/34313

    Abstract: An improved surface-emitting laser device by which the light emitting wave length can be easily varied since the electric potential grown using the thin film material having a desired lattice rate uses a very small portion of activation layers, and by which the continuous oscillation is made at room temperature by using the reflector having high reflective index. Thus, optical characteristics are increased, which includes a GaAs substrate; a lower reflector is formed of multiple layers of AlAs/GaAs heterogenous thin films having a reflective index of 1 on the GaAs substrate; a tooth-shaped grading layer is formed of a lower reflector on the lower reflector and an In.sub.x Ga.sub.1-x As thin film having a large lattice rate in a compositional grading method; a tooth-shaped InGaAs grading well is formed on the In.sub.x Ga.sub.1-x As grading layer as an In composition of which reduced rather than the grading layer; a buffer layer is formed on the In.sub.x Ga.sub.1-x As thin film and formed of a lattice-bonded InP; and an upper semiconductor reflector is formed on a multilayer of an InAlAs/InAlGaAs heterogenous thin film on the buffer layer, which has a reflective index of 1, in which a laser beam is emitted from the surface of the same.

    Abstract translation: 由于使用具有期望晶格率的薄膜材料生长的电位使用非常小部分的活化层，并且由此产生连续振荡，因此改进的表面发射激光器件可以容易地改变发光波长 通过使用具有高反射率的反射器在室温下进行。 因此，增加了包括GaAs衬底的光学特性; 在GaAs衬底上由反射率为1的多层AlAs / GaAs异质薄膜形成下反射体; 在下反射器上由下反射器形成的齿形分级层和在组成分级方法中具有大晶格率的In x Ga 1-x As薄膜; 在In x Ga 1-x As分级层上形成一个齿形的InGaAs分级阱，作为In组成减少而不是分级层; 在In x Ga 1-x As薄膜上形成缓冲层，由晶格键合的InP形成; 并且在缓冲层上的反射率为1的InAlAs / InAlGaAs异质薄膜的多层上形成上半导体反射器，其中从其表面发射激光束。

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