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    N-CHANNEL FLOW RATIO CONTROLLER CALIBRATION
    13.
    发明申请
    N-CHANNEL FLOW RATIO CONTROLLER CALIBRATION 有权
    N通道流量比控制器校准

    公开(公告)号：US20110178628A1

    公开(公告)日：2011-07-21

    申请号：US12986012

    申请日：2011-01-06

    Applicant: Mariusch Gregor ,  John W. Lane

    Inventor： Mariusch Gregor ,  John W. Lane

    IPC: G05D7/00

    CPC classification number: F17D3/00 ,  G01F25/003 ,  G01F25/0053 ,  Y10T137/0324 ,  Y10T137/0363 ,  Y10T137/0379 ,  Y10T137/0402 ,  Y10T137/2524 ,  Y10T137/2529

    Abstract: Embodiments of the present invention generally relate to methods of controlling gas flow in etching chambers. The methods generally include splitting a single process gas supply source into multiple inputs of separate process chambers, such that each chamber processes substrates under uniform processing conditions. The method generally includes using a mass flow controller as a reference for calibrating a flow ratio controller. A span correction factor may be determined to account for the difference between the actual flow and the measured flow through the flow ratio controller. The span correction factors may be used to determine corrected set points for each channel of the flow controller using equations provided herein. Furthermore, the set points of the flow ratio controller may be made gas-independent using additional equations provided herein.

    Abstract translation: 本发明的实施例一般涉及控制蚀刻室中的气流的方法。 这些方法通常包括将单个工艺气体供应源分离成单独的处理室的多个输入，使得每个室在均匀的处理条件下处理衬底。 该方法通常包括使用质量流量控制器作为校准流量比控制器的参考。 可以确定跨度校正因子以解决通过流量比控制器的实际流量和测量流量之间的差异。 跨度校正因子可以用于使用本文提供的等式来确定流量控制器的每个通道的校正设定点。 此外，可以使用本文提供的附加方程式将流量比控制器的设定点与气体无关。

    Method and apparatus for treating fluids
    17.
    发明授权
    Method and apparatus for treating fluids 失效
    用于处理流体的方法和装置

    公开(公告)号：US07524413B2

    公开(公告)日：2009-04-28

    申请号：US11304348

    申请日：2005-12-15

    Applicant: Kenneth E. Wittmer ,  Walter F. J. Crewson ,  John W. Lane

    Inventor： Kenneth E. Wittmer ,  Walter F. J. Crewson ,  John W. Lane

    IPC: B01D17/12 ,  C02F1/48

    CPC classification number: C02F1/484 ,  C02F2201/4613 ,  C02F2201/483 ,  C02F2209/005 ,  C02F2303/22 ,  H03K3/57 ,  H03K17/79

    Abstract: A method and apparatus for treating a fluid to destroy, remove, or reduce undesirable agents, such as microorganisms, particles or ions, contained in the fluid and/or to inhibit the formation of scale are disclosed.The invention includes an apparatus for treating a fluid to destroy, remove, or reduce undesirable agents, such as microorganisms, particles, or ions, contained in the fluid and/or to inhibit the formation of scale. The apparatus can include an open fluid directional means or conduit. The preferred open fluid directional means is a conduit manufactured of resilient, corrosion-resistant material. The apparatus is attached to a power source and has a controller means. The controller means is desirably a microprocessor and can include a switching means for regulating the current to the apparatus. However, simpler circuits and components can be used for the controller means. The apparatus includes a field generating means. The field generating means forms a treatment field. The treatment field is a magnetic field and/or an electrical field in an effective dose sufficient to treat the fluid. The effective dose is determined by the exposure time(s) and strength(s) of the treatment field(s) and the concentration of contaminants present in the fluid subjected to the treatment.

    Abstract translation: 公开了一种用于处理流体以破坏，去除或减少包含在流体中的不期望的试剂，例如微生物，颗粒或离子和/或抑制水垢形成的方法和装置。 本发明包括一种用于处理流体以破坏，去除或减少包含在流体中的不期望的物质，例如微生物，颗粒或离子和/或抑制水垢形成的装置。 该装置可以包括开放的流体定向装置或导管。 优选的开放流体定向装置是由弹性的耐腐蚀材料制成的导管。 该装置附接到电源并具有控制装置。 控制器装置理想地是微处理器，并且可以包括用于调节到设备的电流的开关装置。 然而，更简单的电路和组件可以用于控制器装置。 该装置包括场产生装置。 场产生装置形成治疗场。 治疗场是具有足以治疗流体的有效剂量的磁场和/或电场。 有效剂量由处理场的暴露时间和强度以及存在于经受处理的流体中的污染物的浓度决定。

    Methods and apparatus for processing substrates using model-based control
    20.
    发明授权
    Methods and apparatus for processing substrates using model-based control 有权
    使用基于模型的控制处理基板的方法和装置

    公开(公告)号：US08880210B2

    公开(公告)日：2014-11-04

    申请号：US13183520

    申请日：2011-07-15

    Applicant: Keith Brian Porthouse ,  John W. Lane ,  Mariusch Gregor ,  Nir Merry ,  Michael R. Rice ,  Alex Minkovich ,  Hongbin Li ,  Dmitry A. Dzilno

    Inventor： Keith Brian Porthouse ,  John W. Lane ,  Mariusch Gregor ,  Nir Merry ,  Michael R. Rice ,  Alex Minkovich ,  Hongbin Li ,  Dmitry A. Dzilno

    IPC: G06F19/00 ,  G05B17/02 ,  H01L21/67 ,  G05D16/20

    CPC classification number: G05D16/2046 ,  G05B17/02 ,  H01L21/67017 ,  H01L21/67253

    Abstract: Methods and apparatus are disclosed herein. In some embodiments, methods of controlling process chambers may include predetermining a relationship between pressure in a processing volume and a position of an exhaust valve as a function of a process parameter; setting the process chamber to a first state having a first pressure in the processing volume and a first value of the process parameter, wherein the exhaust valve is set to a first position based on the predetermined relationship to produce the first pressure at the first value; determining a pressure control profile to control the pressure as the process chamber is changed to a second state having a second pressure and a second process parameter value from the first state; and applying the pressure control profile to control the pressure by varying the position of the exhaust valve while changing the process chamber to the second state.

    Abstract translation: 本文公开了方法和装置。 在一些实施例中，控制处理室的方法可以包括根据处理参数预先确定处理容积中的压力与排气门的位置之间的关系; 将所述处理室设定为处理容积中具有第一压力的第一状态和所述处理参数的第一值，其中所述排气阀基于所述预定关系设定在第一位置以产生所述第一值的所述第一压力; 当所述处理室改变为具有来自所述第一状态的第二压力和第二过程参数值的第二状态时，确定压力控制曲线以控制所述压力; 以及通过在将处理室改变到第二状态的同时改变排气门的位置来施加压力控制曲线来控制压力。

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