公开(公告)号：US20060220204A1

公开(公告)日：2006-10-05

申请号：US11431074

申请日：2006-05-10

申请人： Tamaki Wada ,  Hirotaka Nishizawa ,  Masachika Masuda ,  Kenji Osawa ,  Junichiro Osako ,  Satoshi Hatakeyama ,  Haruji Ishihara ,  Kazuo Yoshizaki ,  Kazunori Furusawa

发明人： Tamaki Wada ,  Hirotaka Nishizawa ,  Masachika Masuda ,  Kenji Osawa ,  Junichiro Osako ,  Satoshi Hatakeyama ,  Haruji Ishihara ,  Kazuo Yoshizaki ,  Kazunori Furusawa

IPC分类号： H01L23/02

CPC分类号： G06K19/077 ,  G06K19/07732 ,  G06K19/07737 ,  G06K19/07739 ,  G06K19/07743 ,  G11C5/04 ,  H01L23/5388 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L25/18 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10161 ,  H01L2924/14 ,  H01L2924/181 ,  H05K5/026 ,  H05K5/0282 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012

摘要： On an adapter mounting portion 3a having a projecting cross section which is formed on a cap 3 of a small-sized memory card 1, a recessed portion of an adapter 2 side is fitted so that both parts are formed as an integral unit in a replaceable manner. Accordingly, the small-sized memory card 1 can maintain the dimensional compatibility with respect to existing memory cards whereby the small-sized memory card 1 can be used also in equipment which is designed to cope with the existing memory cards.

摘要翻译： 在具有形成在小型存储卡1的盖3上的突出横截面的适配器安装部分3a上，适配器2侧的凹部装配成两个部分作为整体单元形成在 可更换的方式。 因此，小型存储卡1可以保持与现有存储卡的尺寸兼容性，由此小尺寸存储卡1也可以用于被设计为处理现有存储卡的设备中。

公开(公告)号：US20060220203A1

公开(公告)日：2006-10-05

申请号：US11431072

申请日：2006-05-10

申请人： Tamaki Wada ,  Hirotaka Nishizawa ,  Masachika Masuda ,  Kenji Osawa ,  Junichiro Osako ,  Satoshi Hatakeyama ,  Haruji Ishihara ,  Kazuo Yoshizaki ,  Kazunori Furusawa

发明人： Tamaki Wada ,  Hirotaka Nishizawa ,  Masachika Masuda ,  Kenji Osawa ,  Junichiro Osako ,  Satoshi Hatakeyama ,  Haruji Ishihara ,  Kazuo Yoshizaki ,  Kazunori Furusawa

IPC分类号： H01L23/02

CPC分类号： G06K19/077 ,  G06K19/07732 ,  G06K19/07737 ,  G06K19/07739 ,  G06K19/07743 ,  G11C5/04 ,  H01L23/5388 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L25/18 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10161 ,  H01L2924/14 ,  H01L2924/181 ,  H05K5/026 ,  H05K5/0282 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012

摘要： On an adapter mounting portion 3a having a projecting cross section which is formed on a cap 3 of a small-sized memory card 1, a recessed portion of an adapter 2 side is fitted so that both parts are formed as an integral unit in a replaceable manner. Accordingly, the small-sized memory card 1 can maintain the dimensional compatibility with respect to existing memory cards whereby the small-sized memory card 1 can be used also in equipment which is designed to cope with the existing memory cards.

公开(公告)号：US06858925B2

公开(公告)日：2005-02-22

申请号：US10240187

申请日：2001-12-28

申请人： Tamaki Wada ,  Hirotaka Nishizawa ,  Masachika Masuda ,  Kenji Osawa ,  Junichiro Osako ,  Satoshi Hatakeyama ,  Haruji Ishihara ,  Kazuo Yoshizaki ,  Kazunori Furusawa

发明人： Tamaki Wada ,  Hirotaka Nishizawa ,  Masachika Masuda ,  Kenji Osawa ,  Junichiro Osako ,  Satoshi Hatakeyama ,  Haruji Ishihara ,  Kazuo Yoshizaki ,  Kazunori Furusawa

IPC分类号： G06K19/077 ,  G11C5/00 ,  H01L23/02 ,  H05K5/02 ,  H05K7/02 ,  H05K7/06 ,  H05K7/08 ,  H05K7/10 ,  H05K7/12

CPC分类号： G06K19/077 ,  G06K19/07732 ,  G06K19/07737 ,  G06K19/07739 ,  G06K19/07743 ,  G11C5/04 ,  H01L23/5388 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L25/18 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10161 ,  H01L2924/14 ,  H01L2924/181 ,  H05K5/026 ,  H05K5/0282 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012

摘要： On an adapter mounting portion 3a having a projecting cross section which is formed on a cap 3 of a small-sized memory card 1, a recessed portion of an adapter 2 side is fitted so that both parts are formed as an integral unit in a replaceable manner. Accordingly, the small-sized memory card 1 can maintain the dimensional compatibility with respect to existing memory cards whereby the small-sized memory card 1 can be used also in equipment which is designed to cope with the existing memory cards.

摘要翻译： 在具有形成在小型存储卡1的盖3上的具有突出横截面的适配器安装部分3a上，适配器2侧的凹部装配成两个部分作为整体单元形成为可更换的 方式。 因此，小型存储卡1可以保持与现有存储卡的尺寸兼容性，由此小尺寸存储卡1也可以用于被设计为处理现有存储卡的设备中。

公开(公告)号：US5880497A

公开(公告)日：1999-03-09

申请号：US592235

申请日：1996-01-26

申请人： Shuji Ikeda ,  Koichi Imato ,  Kazuo Yoshizaki ,  Kohji Yamasaki ,  Soichiro Hashiba ,  Keiichi Yoshizumi ,  Yasuko Yoshida ,  Kousuke Okuyama ,  Mitsugu Oshima ,  Kazushi Tomita ,  Tsuyoshi Tabata ,  Kazushi Fukuda ,  Junichi Takano ,  Toshiaki Yamanaka ,  Chiemi Hashimoto ,  Motoko Kawashima ,  Fumiyuki Kanai ,  Takashi Hashimoto

发明人： Shuji Ikeda ,  Koichi Imato ,  Kazuo Yoshizaki ,  Kohji Yamasaki ,  Soichiro Hashiba ,  Keiichi Yoshizumi ,  Yasuko Yoshida ,  Kousuke Okuyama ,  Mitsugu Oshima ,  Kazushi Tomita ,  Tsuyoshi Tabata ,  Kazushi Fukuda ,  Junichi Takano ,  Toshiaki Yamanaka ,  Chiemi Hashimoto ,  Motoko Kawashima ,  Fumiyuki Kanai ,  Takashi Hashimoto

IPC分类号： H01L27/11

CPC分类号： H01L27/1108 ,  Y10S257/903 ,  Y10S257/904

摘要： A SRAM having its memory cell constructed to include transfer MISFETs to be controlled by word lines and a flip-flop circuit having driver MISFETs and load MISFETs. Plate electrodes of large area fixed on predetermined power source lines are arranged over the load MISFETs such that the plate electrodes over the offset region of the load MISFETs are formed with an opening. A silicon nitride film having a thickness permeable to hydrogen but not to humidity is formed over the transfer MISFETs and the driver MISFETs formed over the main surface of a semiconductor substrate and the load MISFETs formed of a polycrystalline silicon film deposited on the driver MISFETs.

摘要翻译： 其存储单元被构造成包括由字线控制的转移MISFET和具有驱动器MISFET和负载MISFET的触发器电路的SRAM。 固定在预定电源线上的大面积平板电极布置在负载MISFET上，使得负载MISFET的偏移区域上的平板电极形成开口。 在半导体衬底的主表面上形成的转移MISFET和驱动器MISFET上形成具有可渗透氢而不湿度的氮化硅膜，以及沉积在驱动器MISFET上的多晶硅膜形成的负载MISFET。

公开(公告)号：US5508540A

公开(公告)日：1996-04-16

申请号：US190596

申请日：1994-02-02

申请人： Shuji Ikeda ,  Koichi Imato ,  Kazuo Yoshizaki ,  Kohji Yamasaki ,  Soichiro Hashiba ,  Keiichi Yoshizumi ,  Yasuko Yoshida ,  Kousuke Okuyama ,  Mitsugu Oshima ,  Kazushi Tomita ,  Tsuyoshi Tabata ,  Kazushi Fukuda ,  Junichi Takano ,  Toshiaki Yamanaka ,  Chiemi Hashimoto ,  Motoko Kawashima ,  Fumiyuki Kanai ,  Takashi Hashimoto

发明人： Shuji Ikeda ,  Koichi Imato ,  Kazuo Yoshizaki ,  Kohji Yamasaki ,  Soichiro Hashiba ,  Keiichi Yoshizumi ,  Yasuko Yoshida ,  Kousuke Okuyama ,  Mitsugu Oshima ,  Kazushi Tomita ,  Tsuyoshi Tabata ,  Kazushi Fukuda ,  Junichi Takano ,  Toshiaki Yamanaka ,  Chiemi Hashimoto ,  Motoko Kawashima ,  Fumiyuki Kanai ,  Takashi Hashimoto

IPC分类号： H01L27/11 ,  H01L27/108 ,  H01L29/04 ,  H01L29/76

CPC分类号： H01L27/1108 ,  Y10S257/903 ,  Y10S257/904

摘要： A SRAM having its memory cell constructed to include transfer MISFETs to be controlled by word lines and a flip-flop circuit having driver MISFETs and load MISFETs. Plate electrodes of large area fixed on predetermined power source lines are arranged over the load MISFETs such that the plate electrodes over the offset region of the load MISFETs are formed with an opening. A silicon nitride film having a thickness permeable to hydrogen but not to humidity is formed over the transfer MISFETs and the driver MISFETs formed over the main surface of a semiconductor substrate and the load MISFETs formed of a polycrystalline silicon film deposited on the driver MISFETs.

摘要翻译： 其存储单元被构造成包括由字线控制的转移MISFET和具有驱动器MISFET和负载MISFET的触发器电路的SRAM。 固定在预定电源线上的大面积平板电极布置在负载MISFET上，使得负载MISFET的偏移区域上的平板电极形成开口。 在半导体衬底的主表面上形成的转移MISFET和驱动器MISFET上形成具有可渗透氢而不湿度的氮化硅膜，以及沉积在驱动器MISFET上的多晶硅膜形成的负载MISFET。