公开(公告)号：US07884345B2

公开(公告)日：2011-02-08

申请号：US12182644

申请日：2008-07-30

Applicant: Lung-Han Peng ,  Sung-Li Wang ,  Meng-Kuei Hsieh ,  Chien-Yu Chen

Inventor： Lung-Han Peng ,  Sung-Li Wang ,  Meng-Kuei Hsieh ,  Chien-Yu Chen

IPC: H01L29/04

CPC classification number: C23C14/0676 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/145 ,  H01L45/1625 ,  Y10S438/90

Abstract: A phase-change material and a memory unit using the phase-change material are provided. The phase-change material is in a single crystalline state and includes a compound of a metal oxide or nitroxide, wherein the metal is at least one selected from a group consisting of indium, gallium and germanium. The memory unit includes a substrate; at least a first contact electrode formed on the substrate; a dielectric layer disposed on the substrate and formed with an opening for a layer of the phase-change material to be formed therein; and at least a second contact electrode disposed on the dielectric layer. As the phase-change material is in a single crystalline state and of a great discrepancy between high and low resistance states, the memory unit using the phase-changed material can achieve a phase-change characteristic rapidly by pulse voltage and avert any incomplete reset while with a low critical power.

Abstract translation: 提供了相变材料和使用该相变材料的存储单元。 相变材料为单晶状态，包括金属氧化物或氮氧化物的化合物，其中金属为选自铟，镓和锗的至少一种。 存储单元包括基板; 至少形成在所述基板上的第一接触电极; 介电层，其设置在所述基板上，并且形成有用于要形成在其中的所述相变材料层的开口; 以及设置在电介质层上的至少第二接触电极。 由于相变材料处于单晶状态，在高电阻状态和低电阻状态之间存在很大的差异，所以使用相变材料的存储器单元可以通过脉冲电压快速获得相变特性，并避免任何不完全复位 具有低临界功率。

公开(公告)号：US20120228655A1

公开(公告)日：2012-09-13

申请号：US13351648

申请日：2012-01-17

Applicant: Chen-Yen Lin ,  Yung-Ming Lin ,  Po-Chun Yeh ,  Jeng-Wei Yu ,  Chih-Ming Lai ,  Lung-Han Peng

Inventor： Chen-Yen Lin ,  Yung-Ming Lin ,  Po-Chun Yeh ,  Jeng-Wei Yu ,  Chih-Ming Lai ,  Lung-Han Peng

IPC: H01L33/58 ,  H01L33/42

CPC classification number: H01L33/20 ,  H01L33/0012 ,  H01L33/0062 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.

Abstract translation: 发光二极管包括基板，多个柱结构，填充结构，透明导电层，第一电极和第二电极。 这些柱结构形成在基板上。 每个柱结构包括第一类型半导体层，有源层和第二类型半导体层。 在基板上形成第一类型的半导体层。 柱结构通过第一类型半导体层彼此电连接。 填料结构形成在柱结构之间。 柱结构的填充结构和第二类型半导体层被透明导电层覆盖。 第一电极与透明导电层接触。 第二电极与第一类型半导体层接触。

公开(公告)号：US20110124203A1

公开(公告)日：2011-05-26

申请号：US12931361

申请日：2007-06-27

Applicant: Lung-Han Peng ,  Han-Ming Wu ,  Jing-Yi Lin

Inventor： Lung-Han Peng ,  Han-Ming Wu ,  Jing-Yi Lin

IPC: H01L21/31

CPC classification number: H01L21/02241 ,  H01L21/02258 ,  H01L21/02337 ,  H01L21/3143 ,  H01L21/31679 ,  H01L29/78681

Abstract: A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

公开(公告)号：US07022597B2

公开(公告)日：2006-04-04

申请号：US10892180

申请日：2004-07-16

Applicant: Lung-Han Peng ,  Han-Ming Wu ,  Sung-Li Wang ,  Chia-Wei Chang ,  Chin-Yi Lin

Inventor： Lung-Han Peng ,  Han-Ming Wu ,  Sung-Li Wang ,  Chia-Wei Chang ,  Chin-Yi Lin

IPC: H01L21/44

CPC classification number: H01L33/42 ,  H01L33/32

Abstract: A method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes includes forming a transparent conductive film on a GaN layer, forming a transparent conductive hetero-junction of opposing electrical characteristics on a transparent conductive film on the surface of the GaN layer through an ion diffusion process, and laying a metallic thick film on the surface of the transparent conductive hetero-junction for wiring process in the later fabrication operation. Thus through the electron and hole tunneling effect in the ion diffusion process the Fermi level of the hetero-junction may be improved to form an ohmic contact electrode.

Abstract translation: 一种制造氮化镓基透明导电氧化膜欧姆电极的方法包括在GaN层上形成透明导电膜，通过离子在GaN层的表面上的透明导电膜上形成具有相反电特性的透明导电异质结 扩散工艺，并在后续制造操作中在布线工艺的透明导电异质结表面上铺设金属厚膜。 因此，通过离子扩散过程中的电子和空穴隧穿效应，可以改善异质结的费米能级以形成欧姆接触电极。

公开(公告)号：US08981373B1

公开(公告)日：2015-03-17

申请号：US14146097

申请日：2014-01-02

Applicant: Lung-Han Peng ,  Yao-Te Wang ,  Po-Chun Yeh ,  Po-Ting Lee

Inventor： Lung-Han Peng ,  Yao-Te Wang ,  Po-Chun Yeh ,  Po-Ting Lee

IPC: H01L21/02 ,  H01L33/08 ,  H01L33/28 ,  H01L33/32 ,  H01L33/34

CPC classification number: H01L33/08 ,  H01L33/26 ,  H01L33/32

Abstract: A white LED is provided. The white LED includes a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure is disposed over the P-type layer. The tunneling structure includes a first barrier layer, an active layer and a second barrier layer. The first barrier layer includes a first metal oxide layer. The active layer includes a second metal oxide layer. The second barrier layer includes a third metal oxide layer. The N-type layer is disposed over the tunneling structure. The N-type electrode and the P-type electrode are respectively contacted with the N-type layer and the P-type layer. An energy gap of the second metal oxide layer is lower than an energy gap of the first metal oxide layer and is lower than an energy gap of the third metal oxide layer.

Abstract translation: 提供白色LED。 白色LED包括P型层，隧道结构，N型层，N型电极和P型电极。 隧道结构设置在P型层上。 隧道结构包括第一阻挡层，有源层和第二阻挡层。 第一阻挡层包括第一金属氧化物层。 有源层包括第二金属氧化物层。 第二阻挡层包括第三金属氧化物层。 N型层设置在隧道结构之上。 N型电极和P型电极分别与N型层和P型层接触。 第二金属氧化物层的能隙低于第一金属氧化物层的能隙，并且低于第三金属氧化物层的能隙。

公开(公告)号：US08487325B2

公开(公告)日：2013-07-16

申请号：US13351648

申请日：2012-01-17

Applicant: Chen-Yen Lin ,  Yung-Ming Lin ,  Po-Chun Yeh ,  Jeng-Wei Yu ,  Chih-Ming Lai ,  Lung-Han Peng

Inventor： Chen-Yen Lin ,  Yung-Ming Lin ,  Po-Chun Yeh ,  Jeng-Wei Yu ,  Chih-Ming Lai ,  Lung-Han Peng

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/20 ,  H01L33/0012 ,  H01L33/0062 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.

Abstract translation: 发光二极管包括基板，多个柱结构，填充结构，透明导电层，第一电极和第二电极。 这些柱结构形成在基板上。 每个柱结构包括第一类型半导体层，有源层和第二类型半导体层。 在基板上形成第一类型的半导体层。 柱结构通过第一类型半导体层彼此电连接。 填料结构形成在柱结构之间。 柱结构的填充结构和第二类型半导体层被透明导电层覆盖。 第一电极与透明导电层接触。 第二电极与第一类型半导体层接触。

公开(公告)号：US07253061B2

公开(公告)日：2007-08-07

申请号：US11005193

申请日：2004-12-06

Applicant: Lung-Han Peng ,  Han-Ming Wu ,  Jing-Yi Lin

Inventor： Lung-Han Peng ,  Han-Ming Wu ,  Jing-Yi Lin

IPC: H01L21/336

CPC classification number: H01L21/02241 ,  H01L21/02258 ,  H01L21/02337 ,  H01L21/3143 ,  H01L21/31679 ,  H01L29/78681

Abstract: A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

Abstract translation: 在制造半导体器件中形成栅极绝缘体的方法包括进行光辅助电化学处理以在半导体器件的氮化镓层上形成栅极绝缘层，其中栅极绝缘层包括氮氧化镓和镓 并进行快速热退火处理。 光辅助电化学方法在约5.5和7.5之间的pH下使用包括缓冲CH 3 COOH的电解质浴。 快速热退火工艺在O 2 O 2环境中在约500℃至800℃的温度下进行。

公开(公告)号：US06190508B1

公开(公告)日：2001-02-20

申请号：US09287326

申请日：1999-04-07

Applicant: Lung-Han Peng ,  Yi-Chien Hsu ,  Chin-Yuan Chen ,  Jin-Kuo Ho ,  Chao-Nien Huang

Inventor： Lung-Han Peng ,  Yi-Chien Hsu ,  Chin-Yuan Chen ,  Jin-Kuo Ho ,  Chao-Nien Huang

IPC: C01B2100

CPC classification number: C01G1/02 ,  C01B13/324 ,  C01P2002/72

Abstract: A method of forming oxide from nitride, in which the oxidation is enhanced by illuminating the nitride material with UV light. This method produces a rapid growth of oxide and allows for the monitoring of the oxide thickness in situ. The method comprises the steps of (i) placing the nitride material on an illuminating holder; (ii) dipping the nitride material and the illuminating holder in an electrolyte; and (iii) illuminating the nitride material with a light having an energy larger than the energy gap of the nitride material. The nitride material can be connected to a conductive electrode located in the electrolyte via a galvanometer to monitor a photo current generated by the oxidation of the nitride material so as to monitor the thickness of the oxide formed on the nitride material in situ. A metal coating can be coated on the nitride material to define the oxide forming region. The pH value of the electrolyte is in a range of approximately 3 to 10, and is preferably about 3.5.

Abstract translation: 从氮化物形成氧化物的方法，其中通过用UV光照射氮化物材料来增强氧化。 该方法产生氧化物的快速生长，并允许原位监测氧化物厚度。 该方法包括以下步骤：（i）将氮化物材料放置在照明保持器上; （ii）将氮化物材料和照明保持器浸入电解质中; 和（iii）用能量大于氮化物材料的能隙的光来照射氮化物材料。 氮化物材料可以经由电流计连接到位于电解质中的导电电极，以监测由氮化物材料的氧化产生的光电流，以便现场监测在氮化物材料上形成的氧化物的厚度。 可以在氮化物材料上涂覆金属涂层以限定氧化物形成区域。 电解液的pH值在约3〜10的范围内，优选为3.5左右。

公开(公告)号：US08587862B2

公开(公告)日：2013-11-19

申请号：US13218462

申请日：2011-08-26

Applicant: Jiun-Wei Liou ,  Jun-Ying Li ,  Chih-Ming Lai ,  Chern-Lin Chen ,  Way-Seen Wang ,  Lung-Han Peng

Inventor： Jiun-Wei Liou ,  Jun-Ying Li ,  Chih-Ming Lai ,  Chern-Lin Chen ,  Way-Seen Wang ,  Lung-Han Peng

IPC: G02F1/37 ,  G02F1/35

CPC classification number: G02F1/37 ,  G02F1/3558 ,  G02F1/3775

Abstract: A second-harmonic generation nonlinear frequency converter includes a nonlinear optical crystal. The nonlinear optical crystal includes a plurality of sections. The sections connect to each other in sequence, and each section has a phase different from others. Each of the phases includes a positive domain and a negative domain. Each of the sections includes a plurality of quasi-phase-matching structures. The quasi-phase-matching structures connect to each other in sequence and have the same phase in one section.

Abstract translation: 二次谐波发生非线性频率转换器包括非线性光学晶体。 非线性光学晶体包括多个部分。 这些部分依次相互连接，每个部分的阶段与其他部分不同。 每个相包括正域和负域。 每个部分包括多个准相位匹配结构。 准相位匹配结构依次相互连接，在一个部分中具有相同的相位。

公开(公告)号：US08409892B2

公开(公告)日：2013-04-02

申请号：US13086663

申请日：2011-04-14

Applicant: Lung-Han Peng ,  Jeng-Wei Yu ,  Po-Chun Yeh

Inventor： Lung-Han Peng ,  Jeng-Wei Yu ,  Po-Chun Yeh

IPC: H01L21/00

CPC classification number: H01L33/32 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/02639 ,  H01L33/007 ,  H01L33/06

Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

Abstract translation: 本公开的各种实施方案涉及对衬底上的氮化物层再生长的选择性光增强湿氧化。 一方面，一种方法可以包括：在衬底的第一表面上形成具有第一低带隙能的第一III族氮化物层; 在所述第一III族氮化物层上形成具有第一高带隙能的第二III族氮化物层; 通过光增强湿氧化将第一III-氮化物层的部分转变成多个III-氧化物条; 在所述III氧化物条之间的所述第二III族氮化物层上形成具有第二低带隙能量的多个III族氮化物纳米线; 并且通过选择性光增强氧化将至少一些III族氮化物纳米线选择性地转化为III族氧化物纳米线。