公开(公告)号：US07026651B2

公开(公告)日：2006-04-11

申请号：US10629737

申请日：2003-07-30

申请人： Masato Yamada ,  Masanobu Takahashi

发明人： Masato Yamada ,  Masanobu Takahashi

IPC分类号： H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L25/0753 ,  F21K9/232 ,  F21S6/001 ,  F21S8/04 ,  F21S10/04 ,  F21W2121/00 ,  F21W2131/109 ,  F21Y2115/10 ,  H01L33/06 ,  H01L33/08 ,  H01L33/483 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/09701 ,  H01L2933/0091 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

摘要： A light emitting device capable of readily produce a pseudo-continuous spectrum covering a wide wavelength regions at low costs, and of totally solving various problems which have resided in the conventional light sources, and a lighting apparatus using this device is provided. The light emitting device 10 is configured so that an active layer in a double hetero light emitting layer portion composed of compound semiconductors comprises a plurality of emission unit layers differing from each other in band gap energy, and so as to emit a simulatively synthesized light having a pseudo-continuous spectrum ensuring an emission intensity of 5% or more of a peak intensity over a wavelength region of 50 nm or more.

摘要翻译： 提供一种能够以低成本容易地产生覆盖宽波长区域的伪连续光谱并且完全解决常规光源中存在的各种问题的发光器件以及使用该器件的照明装置。 发光器件10被配置为使得由化合物半导体构成的双异质发光层部分中的有源层包括在带隙能量上彼此不同的多个发射单元层，并且发射模拟合成的光，其具有 确保在50nm以上的波长区域的峰值强度的发光强度为5％以上的伪连续光谱。

公开(公告)号：US20050285127A1

公开(公告)日：2005-12-29

申请号：US10523636

申请日：2003-08-06

申请人： Nobuhiko Noto ,  Masato Yamada ,  Shinji Nozaki ,  Kazuo Uchida ,  Hiroshi Morisaki

发明人： Nobuhiko Noto ,  Masato Yamada ,  Shinji Nozaki ,  Kazuo Uchida ,  Hiroshi Morisaki

IPC分类号： H01L33/10 ,  H01L33/30 ,  H01L33/36 ,  H01L29/20 ,  H01L21/00

CPC分类号： H01L33/42 ,  H01L33/30

摘要： A light-emitting device 100 has ITO transparent electrode layers 8, 10 used for applying drive voltage for light-emission to a light-emitting layer section 24, and is designed so as to extract light from the light-emitting layer section 24 through the ITO transparent electrode layers 8, 10. The light-emitting device 100 also has contact layers composed of In-containing GaAs, formed between the light-emitting layer section 24 and the ITO transparent electrode layers 8, 10, so as to contact with the ITO transparent electrode layers respectively. The contact layers 7, 9 are formed by annealing a stack 13 obtained by forming GaAs layers 7′, 9′ on the light-emitting layer section, and by forming the ITO transparent electrode layers 8, 10 so as to contact with the GaAs layers 7′, 9′, to thereby allow In to diffuse from the ITO transparent electrode layers 8, 10 into the GaAs layers 7′, 9′. This provides a method of fabricating a light-emitting device, in which the ITO transparent electrode layers as the light-emission drive electrodes are bonded as being underlain by the contact layers, to thereby reduce contact resistance of these electrodes, and to thereby make the contact layers less susceptible to difference in the lattice constants with those of the light-emitting layer section during the formation thereof.

摘要翻译： 发光装置100具有用于向发光层部分24施加用于发光的驱动电压的ITO透明电极层8,10，并且被设计成从发光层部分24通过 ITO透明电极层8,10。 发光装置100还具有形成在发光层部24和ITO透明电极层8,10之间的含有In的GaAs的接触层，以分别与ITO透明电极层接触。 接触层7,9通过在发光层部分上形成GaAs层7'，9'而获得的叠层13退火并通过形成ITO透明电极层8,10而与GaAs层接触而形成 7'，9'，从而允许In从ITO透明电极层8,10扩散到GaAs层7'，9'中。 这提供了一种制造发光器件的方法，其中作为发光驱动电极的ITO透明电极层被接触层接合，从而降低这些电极的接触电阻，从而使 接触层在其形成期间不太容易发生与发光层部分的晶格常数的差异。

公开(公告)号：US06618424B1

公开(公告)日：2003-09-09

申请号：US09533975

申请日：2000-03-23

申请人： Masato Yamada ,  Yoichi Tsuchiya

发明人： Masato Yamada ,  Yoichi Tsuchiya

IPC分类号： H01S308

CPC分类号： G11B7/1378 ,  G11B7/1353 ,  G11B7/1398 ,  H01S5/005

摘要： An optical pickup device includes a semiconductor laser, a collimater lens, an optical member, a halfmirror, an objective lens, a collecting lens and a photodetector. The collimator lens collimates a laser beam from the semiconductor laser. The optical member diffracts the laser beam which has been collimated by the collimator lens outward along the direction of the shorter diameter of the laser beam, and emits a laser beam having a prescribed aspect ratio. The halfmirror passes the laser beam from optical member and reflects one half the light reflected from a signal recording surface of an optical disk to the photodetector. The objective lens focuses the laser beam on the signal recording surface. The collective lens collects the laser beam from the halfmirror. The photodetector detects the laser beam. Therefore, the optical pickup device is capable of converting the aspect ratio of the laser beam emitted from the semiconductor laser, and hence it becomes possible to irradiate the optical disk with the laser beam having sufficient power for recording a signal.

摘要翻译： 光拾取装置包括半导体激光器，准直透镜，光学部件，半透镜，物镜，聚光透镜和光电检测器。 准直透镜准直来自半导体激光器的激光束。 光学构件沿着激光束的较短直径的方向将准直透镜向前准直的激光束衍射，并发射具有规定的纵横比的激光束。 半透镜从光学构件通过激光束并将从光盘的信号记录表面反射的光的一半反射到光电检测器。 物镜将激光束聚焦在信号记录表面上。 集体透镜从半透镜收集激光束。 光电检测器检测激光束。 因此，光学拾取装置能够转换从半导体激光器发射的激光束的纵横比，因此可以用具有足够的用于记录信号的电力的激光束照射光盘。

公开(公告)号：US06552990B1

公开(公告)日：2003-04-22

申请号：US09180301

申请日：1998-11-05

申请人： Seiji Kajiyama ,  Yoichi Tsuchiya ,  Masato Yamada ,  Yasuyuki Kanou ,  Shuichi Ichiura

发明人： Seiji Kajiyama ,  Yoichi Tsuchiya ,  Masato Yamada ,  Yasuyuki Kanou ,  Shuichi Ichiura

IPC分类号： G11B700

CPC分类号： G11B7/1353 ,  G11B7/08582 ,  G11B7/123 ,  G11B7/127 ,  G11B7/1362 ,  G11B7/1367 ,  G11B7/139 ,  G11B2007/0006 ,  G11B2007/13727

摘要： An optical pickup device which includes a semiconductor laser selectively generating a laser beam with a wavelength of 635 nm, a laser beam with a wavelength of 780 nm, and an optical device having a central region in which a hologram is formed and a peripheral region in which a diffraction grating is formed. In particular, the optical device is arranged immediately below an objective lens, and the central region allows transmission of the laser beam with the wavelength of 635 nm without any diffraction but increases the diameter of the teaser beam to the wavelength of 780 nm by diffraction. On the other hand, peripheral region allows transmission of the laser beam with the wavelength of 635 nm without any diffraction, but substantially shields the laser beam with the wavelength of 780 nm by diffraction. Thus, each laser beam with the wavelength 635 nm is transmitted through objective lens and focused on a signal recording surface of a DVD. The periphery of the laser beam with the wavelength of 780 nm is significantly diffracted by peripheral region of optical device and only the central portion of the laser beam enters objective lens while increasing its diameter. Thus, the laser beam with the wavelength of 780 nm is focused on a signal recording surface of a CD-R or a CD-ROM. Therefore, the optical pickup device is capable of compatibly reproducing the DVD, CD-R and CD-ROM.

摘要翻译： 一种光拾取装置，包括选择性地产生波长为635nm的激光束的半导体激光器，波长为780nm的激光束，以及具有形成全息图的中心区域的光学元件和周边区域 形成衍射光栅。 特别地，光学装置被布置在物镜的正下方，并且中心区域允许透射具有635nm波长的激光束而没有任何衍射，但是通过衍射将前导光束的直径增加到780nm的波长。 另一方面，外围区域允许透射波长为635nm的激光束而没有衍射，但是通过衍射基本上屏蔽了波长为780nm的激光束。 因此，波长为635nm的每个激光束通过物镜透射并聚焦在DVD的信号记录表面上。 波长为780nm的激光束的周围被光学器件的周边区域显着地衍射，并且只有激光束的中心部分在增加其直径的同时进入物镜。 因此，将波长为780nm的激光束聚焦在CD-R或CD-ROM的信号记录面上。 因此，光学拾取装置能够兼容地再现DVD，CD-R和CD-ROM。

公开(公告)号：US5585305A

公开(公告)日：1996-12-17

申请号：US249197

申请日：1994-05-26

申请人： Masato Yamada ,  Takao Takenaka

发明人： Masato Yamada ,  Takao Takenaka

IPC分类号： H01L21/22 ,  H01L21/223 ,  H01L33/00 ,  H01L33/30

CPC分类号： H01L33/305 ,  H01L21/2205 ,  H01L21/2233 ,  H01L33/0062 ,  Y10S148/099

摘要： A method for fabricating a semiconductor device includes the steps of growing a second semiconductor layer on a first semiconductor layer which is highly doped with an impurity such as Zn and diffusing the impurity concurrently with the growing step of the second semiconductor layer from the first semiconductor layer as an impurity source to the second semiconductor layer to have a predetermined carrier concentration profile, by controlling both the diffusing speed of said impurity and the growing speed of said second semiconductor layer by changing the temperature in accordance with a predetermined sequence to have a predetermined carrier concentration profile in the second semiconductor layer.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在第一半导体层上生长第二半导体层，该第一半导体层高度掺杂有诸如Zn的杂质，并且与第二半导体层的生长步骤同时从第一半导体层扩散杂质 作为第二半导体层的杂质源以通过根据预定的顺序改变温度来控制所述杂质的扩散速度和所述第二半导体层的生长速度，以具有预定的载流子浓度分布，以具有预定的载流子 第二半导体层中的浓度分布。

公开(公告)号：US5459106A

公开(公告)日：1995-10-17

申请号：US310088

申请日：1994-09-22

申请人： Masato Yamada ,  Tadashi Sakurai

发明人： Masato Yamada ,  Tadashi Sakurai

IPC分类号： H01L33/30 ,  H01L33/56 ,  H01L33/62 ,  H01L21/02

CPC分类号： H01L33/44 ,  H01L33/0095 ,  Y10S148/099 ,  Y10S148/163 ,  Y10S438/958

摘要： An AlGaAs chip which has an n-type layer and a p-type layer is immersed in an aqueous solution containing 0.2-0.6 wt. % of ammonia and 25-35 wt. % of hydrogen peroxide to form a primary protective layer, and after drying the AlGaAs chip, the AlGaAs chip is for a second time immersed in an aqueous solution containing 0.2-0.6 wt. % of ammonia and 25-35 wt. % of hydrogen peroxide to form a secondary protective layer.

摘要翻译： 将具有n型层和p型层的AlGaAs芯片浸渍在含有0.2-0.6重量％ 氨的百分比和25-35重量％ ％的过氧化氢以形成主保护层，并且在干燥AlGaAs芯片之后，将AlGaAs芯片第二次浸入含有0.2-0.6wt。 氨的百分比和25-35重量％ ％的过氧化氢以形成二级保护层。

公开(公告)号：US5440384A

公开(公告)日：1995-08-08

申请号：US113189

申请日：1993-08-30

申请人： Masato Yamada ,  Makoto Kawasaki ,  Yutaka Tamura

发明人： Masato Yamada ,  Makoto Kawasaki ,  Yutaka Tamura

IPC分类号： G01R31/26 ,  G01R31/265 ,  H01L21/66 ,  H01L33/30 ,  G01N21/88

CPC分类号： H01L22/24 ,  G01R31/2656 ,  H01L33/0025

摘要： An irradiation light containing a light which wave length is not absorbed by the n-type clad layer, but is absorbed by the p-type active layer, is applied on the wafer for manufacturing light emitting elements with a double-hetero structure of a p-type clad layer, a p-type active layer and an n-type clad layer formed one after another on a semiconductor substrate. Defects are found by detecting the increased photoluminescent light due to generation of a conductivity-type inverted layer such as the n-type inverted layer. When the double-hetero structure is composed of a GaAlAs mixed crystal compound semiconductor, the irradiation light which contains a wavelength range of 600-650 nm is applied. When the defective area is an active layer deficient area, detection is conducted by using the reflection light from the surface of the semiconductor substrate.

摘要翻译： 包含波长不被n型覆盖层吸收但被p型有源层吸收的光的照射光被施加在用于制造具有p的双异质结构的发光元件的晶片上 型覆盖层，在半导体衬底上依次形成的p型有源层和n型覆盖层。 通过检测由于产生诸如n型反转层的导电类型反转层而增加的光致发光，可以发现缺陷。 当双异质结构由GaAlAs混合晶体化合物半导体组成时，应用包含600-650nm波长范围的照射光。 当缺陷区域是有源层缺陷区域时，通过使用来自半导体衬底的表面的反射光进行检测。

公开(公告)号：US5401684A

公开(公告)日：1995-03-28

申请号：US984920

申请日：1992-12-02

申请人： Masato Yamada ,  Takao Takenaka ,  Shinji Orimo

发明人： Masato Yamada ,  Takao Takenaka ,  Shinji Orimo

IPC分类号： H01L21/208 ,  H01L33/00 ,  H01L33/30 ,  H01L33/40

CPC分类号： H01L33/0025 ,  H01L33/0062 ,  Y10S148/101 ,  Y10S148/135 ,  Y10S438/955

摘要： Disclosed are a light-emitting semiconductor device substrate and a method of manufacturing the same. The substrate is prepared by causing a Ga.sub.1-x Al.sub.x As compound semiconductor single crystalline thick-film layer having a first AlAs mole fraction and a low Al containing and oxidation-delaying Ga.sub.1-y Al.sub.y As compound semiconductor single crystalline thin film serving as a surface protective layer and having a second AlAs mole fraction to be sequentially grown on a GaAs crystal substrate. The method comprises the step of causing the thick-film layer and the thin film to be sequentially grown on the GaAs crystal substrate. The GaAs crystal substrate is removed after sequential epitaxial growth of the thick-film layer and thin film on the GaAs crystal substrate.

摘要翻译： 公开了一种发光半导体器件基板及其制造方法。 通过使具有第一AlAs摩尔分数的Ga 1-x Al x As化合物半导体单晶厚膜层和作为表面保护层的低Al含量和氧化延迟Ga 1-y Al y As化合物半导体单晶薄膜制备基板，并具有 在GaAs晶体衬底上顺序生长的第二AlAs摩尔分数。 该方法包括使厚膜层和薄膜依次生长在GaAs晶体基板上的步骤。 在GaAs晶体衬底上的厚膜层和薄膜的顺序外延生长之后，去除GaAs晶体衬底。

公开(公告)号：US5254172A

公开(公告)日：1993-10-19

申请号：US854037

申请日：1992-03-19

申请人： Toshio Otaki ,  Hitoshi Ikeda ,  Masato Yamada ,  Takao Takenaka

发明人： Toshio Otaki ,  Hitoshi Ikeda ,  Masato Yamada ,  Takao Takenaka

IPC分类号： F27B7/20 ,  C30B19/06 ,  H01L21/00 ,  H01L21/208 ,  H01L21/22 ,  H01L21/31 ,  B08B3/04 ,  B05D7/24

CPC分类号： H01L21/67023 ,  C30B19/061

摘要： An semiconductor substrate processing apparatus of the type including a furnace tube associated with a fluid supply unit and a fluid discharge unit, wherein the furnace tube is rotatably supported by pairs of confronting rollers and rotated by a motor under the control of a controller in order to achieve various kinds of processing of semiconductor substrates within the furnace tube. With this rotatable furnace tube, the apparatus exhibits high radial temperature uniformity and is able to prevent deformation of the furnace tube.

公开(公告)号：US5232284A

公开(公告)日：1993-08-03

申请号：US884248

申请日：1992-05-11

申请人： Shunji Egawa ,  Masato Yamada

发明人： Shunji Egawa ,  Masato Yamada

IPC分类号： A61B5/01 ,  G01J1/44 ,  G01J5/00 ,  G01J5/04 ,  G01J5/06 ,  G01J5/08 ,  G01K13/00

CPC分类号： G01J5/04 ,  G01J5/02 ,  G01J5/026 ,  G01J5/049 ,  G01J5/14 ,  G01J2001/4433 ,  G01J2005/0048 ,  G01J2005/068

摘要： A radiation clinical thermometer has a probe with an optical guide and an infrared sensor, a detection signal processing section, a body temperature operating section, and a display unit. A filter correction system for setting a correction value based on the transmission wave length characteristics of a filter is also provided. The body temperature operating section receives infrared data, temperature sensitive data, which takes into account the temperature equilibrium between the optical guide and the infrared sensor, and a correction value from the filter correction section so as to calculate body temperature data.

摘要翻译： 辐射体温计具有带有光导和红外传感器的探头，检测信号处理部，体温操作部和显示部。 还提供了一种用于基于滤波器的传输波长特性设置校正值的滤波器校正系统。 体温操作部分接收考虑了光导和红外传感器之间的温度平衡的红外数据，温度敏感数据和来自滤波器校正部分的校正值，以便计算体温数据。