公开(公告)号：US07501293B2

公开(公告)日：2009-03-10

申请号：US10518945

申请日：2003-06-04

Applicant: Yoshihiro Ito ,  Michio Kadota

Inventor： Yoshihiro Ito ,  Michio Kadota

IPC: H01L29/24 ,  H01L21/00

CPC classification number: H01L29/7869 ,  H01L21/02403 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02507 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/02631 ,  H01L33/28 ,  H01S5/327

Abstract: A semiconductor device having excellent crystallinity and excellent electric characteristics includes a ZnO thin film having excellent surface smoothness. ZnO-based thin films (an n-type contact layer, an n-type clad layer, an active layer, a p-type clad layer, and a p-type contact layer) primarily including ZnO are formed sequentially by an ECR sputtering method or other suitable method on a zinc-polar surface of a ZnO substrate. A transparent electrode and a p-side electrode are formed by an evaporation method or other suitable method on a surface of the p-type contact layer, and an n-side electrode is formed on an oxygen-polar surface of the ZnO substrate.

Abstract translation: 具有优异的结晶性和优异的电特性的半导体器件包括具有优异表面平滑度的ZnO薄膜。 主要包括ZnO的ZnO基薄膜（n型接触层，n型覆盖层，有源层，p型覆盖层和p型接触层）依次通过ECR溅射法 或其他合适的方法在ZnO基底的锌极性表面上。 在p型接触层的表面上通过蒸发法或其它合适的方法形成透明电极和p侧电极，在ZnO基板的氧极性面上形成n侧电极。

公开(公告)号：US20090058225A1

公开(公告)日：2009-03-05

申请号：US12272841

申请日：2008-11-18

Applicant: Michio KADOTA

Inventor： Michio KADOTA

IPC: H01L41/04

CPC classification number: H03H9/02834 ,  H03H9/0222

Abstract: An acoustic wave device includes a piezoelectric substrate, IDT electrodes, temperature characteristic-improving layer, and frequency-adjusting layer arranged on the piezoelectric substrate in that order. The piezoelectric substrate has a negative temperature coefficient of frequency TCF. The temperature characteristic-improving layer is made of a material having a positive temperature coefficient of frequency TCF. The frequency-adjusting layer includes a glass thin-film having a velocity of transverse wave less than a velocity of transverse wave of the temperature characteristic-improving layer.

Abstract translation: 声波器件按照该顺序包括压电基片，IDT电极，温度特性改善层和调压层。 压电基板具有频率TCF的负温度系数。 温度特性提高层由具有正的温度系数TCF的材料制成。 频率调节层包括具有小于温度特性提高层的横波速度的横波速度的玻璃薄膜。

公开(公告)号：US07327071B2

公开(公告)日：2008-02-05

申请号：US11469505

申请日：2006-09-01

Applicant: Kenji Nishiyama ,  Eiichi Takata ,  Takeshi Nakao ,  Michio Kadota

Inventor： Kenji Nishiyama ,  Eiichi Takata ,  Takeshi Nakao ,  Michio Kadota

IPC: H01L41/08

CPC classification number: H03H3/08 ,  H03H9/02984 ,  H03H9/14538 ,  H03H9/25

Abstract: A surface acoustic wave device includes a piezoelectric substrate made of LiTaO3 or LiNbO3 having an electromechanical coefficient of about 15% or more, at least one electrode which is disposed on the piezoelectric substrate and which is a laminate film having a metal layer defining a primary metal layer primarily composed of a metal having a density higher than that of Al or an alloy of the metal and a metal layer which is laminated on the primary metal layer and which is composed of another metal, and a first SiO2 layer which is disposed in a remaining area other than that at which the at least one electrode is located and which has a thickness approximately equivalent to that of the electrode. In the surface acoustic wave device described above, the density of the electrode is at least about 1.5 times that of the first SiO2 layer. In addition, a second SiO2 layer disposed so as to cover the electrode and the first SiO2 layer and a silicon nitride compound layer disposed on the second SiO2 layer are further provided.

Abstract translation: 表面声波装置包括由机电系数为约15％以上的由LiT 3 O 3或LiNbO 3 3制成的压电基板，至少一个电极设置在 压电基板，其是具有金属层的层压膜，该金属层限定主要由密度高于Al的金属或金属和金属层的合金的主金属层构成的金属层，所述金属层与层叠在所述主金属层上的金属层的合金， 由另一种金属和第一SiO 2层构成，第一SiO 2层设置在除了至少一个电极所位于的其余区域之外的其余区域中，并且具有与电极的厚度大致相等的厚度 。 在上述表面声波装置中，电极的密度为第一SiO 2层的密度的至少约1.5倍。 此外，设置成覆盖电极和第一SiO 2层的第二SiO 2层和设置在第二SiO 2层上的氮化硅化合物层 进一步提供层。

公开(公告)号：US20070284966A1

公开(公告)日：2007-12-13

申请号：US11843527

申请日：2007-08-22

Applicant: Michio KADOTA ,  Koji FUJIMOTO

Inventor： Michio KADOTA ,  Koji FUJIMOTO

IPC: H01L41/00

CPC classification number: G01N29/022 ,  G01N29/2462 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0423

Abstract: A surface wave sensor apparatus has a structure such that, on a first principal surface of a base substrate having first through-hole conductors, surface acoustic wave devices are bonded via thermo-compression anisotropic conductive sheets, on first principal surfaces of piezoelectric substrates of the surface acoustic wave devices, electrodes, such as IDTs, are provided, respectively. These electrodes extend toward second principal surfaces via second through-hole conductors and are provided in the piezoelectric substrates. The first through-hole conductors overlap with the second through-hole conductors with the thermo-compression anisotropic conductive sheets being disposed therebetween, respectively.

Abstract translation: 表面波传感器装置具有如下结构：在具有第一通孔导体的基底基板的第一主表面上，通过热压缩各向异性导电片将表面声波装置接合在第一通孔导体的压电基板的第一主表面上 分别提供表面声波装置，诸如IDT的电极。 这些电极经由第二通孔导体朝向第二主表面延伸，并设置在压电基板中。 第一通孔导体与第二通孔导体重叠，热压各向异性导电片分别设置在它们之间。

公开(公告)号：US20070252475A1

公开(公告)日：2007-11-01

申请号：US10595317

申请日：2004-09-08

Applicant: Kenjiro Okaguchi ,  Koji Fujimoto ,  Michio Kadota

Inventor： Kenjiro Okaguchi ,  Koji Fujimoto ,  Michio Kadota

IPC: G01N29/02

CPC classification number: G01N29/36 ,  G01N29/022 ,  G01N29/2462 ,  G01N2291/014 ,  G01N2291/0256 ,  G01N2291/0423 ,  H03B5/326 ,  H03B5/362

Abstract: A surface-acoustic-wave-sensor-included oscillator circuit does not cause separation of an electrode film due to application of a bias voltage and can reliably accurate operate even if liquid is adhered thereto. The surface-acoustic-wave-sensor-included oscillator circuit includes interdigital electrode disposed on a piezoelectric substrate and a reaction film that is arranged so as to cover the interdigital electrodes and bound to a target substance or a binding material to be bound to the target substance. A surface acoustic wave sensor that is capable of detecting a bit of mass loading on the basis of a variation in frequency is connected as a resonator in the surface-acoustic-wave-sensor-included oscillator circuit. Direct-current cutting capacitors are connected in series to the surface acoustic wave sensor, and the direct-current cutting capacitors respectively define impedance matching circuits in the surface-acoustic-wave-sensor-included oscillator circuit.

Abstract translation: 包含表面声波传感器的振荡电路不会由于施加偏压而引起电极膜的分离，即使液体粘附在其上也能够可靠地进行精确的动作。 包含表面声波传感器的振荡电路包括布置在压电基片上的叉指式电极和反射膜，该反射膜布置成覆盖指状电极并结合到靶物质或结合材料上以与目标物结合 物质。 能够在基于频率变化的基础上检测质量负载量的表面声波传感器作为共振器连接在包含表面声波传感器的振荡电路中。 直流切割电容器与表面声波传感器串联连接，直流切断电容器分别在包含表面声波传感器的振荡电路中形成阻抗匹配电路。

公开(公告)号：US20070214622A1

公开(公告)日：2007-09-20

申请号：US11743793

申请日：2007-05-03

Applicant: Kenji NISHIYAMA ,  Takeshi NAKAO ,  Michio KADOTA

Inventor： Kenji NISHIYAMA ,  Takeshi NAKAO ,  Michio KADOTA

IPC: H01L41/00 ,  H05K3/10

CPC classification number: H03H9/02929 ,  H03H3/10 ,  H03H9/02559 ,  H03H9/14538 ,  Y10T29/42 ,  Y10T29/49016 ,  Y10T29/4913 ,  Y10T29/49135 ,  Y10T29/49155

Abstract: In a manufacturing method for a SAW apparatus a first insulating layer is formed on the entire surface of a piezoelectric LiTaO3 substrate. By using a resist pattern used for forming an IDT electrode, the first insulating layer in which the IDT electrode is to be formed is removed. An electrode film made of a metal having a density higher than Al or an alloy primarily including such a metal is disposed in the area in which the first insulating layer is removed so as to form the IDT electrode. The resist pattern remaining on the first insulating layer is removed. A second insulating layer is formed to cover the first insulating layer and the IDT electrode.

Abstract translation: 在SAW器件的制造方法中，在压电LiTaO 3衬底的整个表面上形成第一绝缘层。 通过使用用于形成IDT电极的抗蚀剂图案，去除其中将形成IDT电极的第一绝缘层。 在除去第一绝缘层的区域中设置由密度高于Al的金属或主要包含金属的合金制成的电极膜，以形成IDT电极。 去除残留在第一绝缘层上的抗蚀剂图案。 形成第二绝缘层以覆盖第一绝缘层和IDT电极。

公开(公告)号：US20070096592A1

公开(公告)日：2007-05-03

申请号：US10595237

申请日：2004-08-06

Applicant: Michio Kadota ,  Takeshi Nakao

Inventor： Michio Kadota ,  Takeshi Nakao

IPC: H03H9/25

CPC classification number: H03H9/02559 ,  H03H3/08

Abstract: A surface acoustic wave device includes a piezoelectric substrate made of LiNbO3 having an electromechanical coupling coefficient k whose square is at least about 0.025, at least one electrode that is made of a metal whose density is greater than that of Al or an alloy primarily including the metal or that is composed of laminated films made of a metal whose density is greater than that of Al or an alloy primarily including the metal and another metal, the electrode being disposed on the piezoelectric substrate, a first insulating layer disposed in a region other than a region where the at least one electrode is disposed, the thickness of the first insulating layer being substantially equal to that of the electrode, and a second insulating layer covering the electrode and the first insulating layer. The density of the electrode is at least about 1.5 times greater than that of the first insulating layer.

Abstract translation: 表面声波装置包括由LiNbO 3 3制成的压电基片，其具有至少约0.025的方形的机电耦合系数k，至少一个由密度高于其的金属制成的电极。 的Al或主要包含金属的合金，或由密度大于Al的金属或主要包含金属的合金的金属和其它金属构成的层压膜构成，所述电极设置在压电基板上，第一 绝缘层，其设置在除设置所述至少一个电极的区域以外的区域中，所述第一绝缘层的厚度与所述电极的厚度基本相等;以及覆盖所述电极和所述第一绝缘层的第二绝缘层。 电极的密度比第一绝缘层的密度高至少约1.5倍。

公开(公告)号：US20070018536A1

公开(公告)日：2007-01-25

申请号：US11535560

申请日：2006-09-27

Applicant: Michio Kadota ,  Hajime Kando

Inventor： Michio Kadota ,  Hajime Kando

IPC: H01L41/00

CPC classification number: H03H9/0222 ,  H03H3/04 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908

Abstract: In a method for producing a boundary acoustic wave device that includes a first medium, a second medium, and a third medium laminated in that order, and electrodes disposed at the interface between the first medium and the second medium, the method includes the steps of preparing a laminate including the first medium, the second medium, and the electrodes disposed at the interface between the first medium and the second medium, adjusting the thickness of the second medium after the step of preparing the laminate to regulate a frequency or the acoustic velocity of a surface acoustic wave, a pseudo-boundary acoustic wave, or a boundary acoustic wave, after the adjusting step, forming the third medium different from the second medium in terms of the acoustic velocity with which the boundary acoustic wave propagates therethrough and/or in terms of material.

公开(公告)号：US20060290233A1

公开(公告)日：2006-12-28

申请号：US11469505

申请日：2006-09-01

Applicant: Kenji NISHIYAMA ,  Eiichi TAKATA ,  Takeshi NAKAO ,  Michio KADOTA

Inventor： Kenji NISHIYAMA ,  Eiichi TAKATA ,  Takeshi NAKAO ,  Michio KADOTA

IPC: H03H9/25

CPC classification number: H03H3/08 ,  H03H9/02984 ,  H03H9/14538 ,  H03H9/25

Abstract: A surface acoustic wave device includes a piezoelectric substrate made of LiTaO3 or LiNbO3 having an electromechanical coefficient of about 15% or more, at least one electrode which is disposed on the piezoelectric substrate and which is a laminate film having a metal layer defining a primary metal layer primarily composed of a metal having a density higher than that of Al or an alloy of the metal and a metal layer which is laminated on the primary metal layer and which is composed of another metal, and a first SiO2 layer which is disposed in a remaining area other than that at which the at least one electrode is located and which has a thickness approximately equivalent to that of the electrode. In the surface acoustic wave device described above, the density of the electrode is at least about 1.5 times that of the first SiO2 layer. In addition, a second SiO2 layer disposed so as to cover the electrode and the first SiO2 layer and a silicon nitride compound layer disposed on the second SiO2 layer are further provided.

Abstract translation: 表面声波装置包括由机电系数为约15％以上的由LiT 3 O 3或LiNbO 3 3制成的压电基板，至少一个电极设置在 压电基板，其是具有金属层的层压膜，该金属层限定主要由密度高于Al的金属或金属和金属层的合金的主金属层构成的金属层，所述金属层与层叠在所述主金属层上的金属层的合金， 由另一种金属和第一SiO 2层构成，第一SiO 2层设置在除了至少一个电极所位于的其余区域之外的其余区域中，并且具有与电极的厚度大致相等的厚度 。 在上述表面声波装置中，电极的密度为第一SiO 2层的密度的至少约1.5倍。 此外，设置成覆盖电极和第一SiO 2层的第二SiO 2层和设置在第二SiO 2层上的氮化硅化合物层 进一步提供层。

公开(公告)号：US20060054888A1

公开(公告)日：2006-03-16

申请号：US10518945

申请日：2003-06-04

Applicant: Yoshihiro Ito ,  Michio Kadota

Inventor： Yoshihiro Ito ,  Michio Kadota

IPC: H01L29/12 ,  H01L21/00

CPC classification number: H01L29/7869 ,  H01L21/02403 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02507 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/02631 ,  H01L33/28 ,  H01S5/327

Abstract: A semiconductor device having excellent crystallinity and excellent electric characteristics includes a ZnO thin film having excellent surface smoothness. ZnO-based thin films (an n-type contact layer, an n-type clad layer, an active layer, a p-type clad layer, and a p-type contact layer primarily including ZnO are formed sequentially by an ECR sputtering method or other suitable method on a zinc-polar surface of a ZnO substrates. A transparent electrode and a p-side electrode are formed by an evaporation method or other suitable method on a surface of the p-type contact layer, and an n-side electrode is formed on an oxygen-polar surface of the ZnO substrate.

Abstract translation: 具有优异的结晶性和优异的电特性的半导体器件包括具有优异表面平滑度的ZnO薄膜。 通过ECR溅射法依次形成ZnO类薄膜（n型接触层，n型覆盖层，有源层，p型覆盖层和主要包含ZnO的p型接触层） 在ZnO基板的锌极性表面上的其他合适的方法，在p型接触层的表面上通过蒸发法或其它合适的方法形成透明电极和p侧电极，以及n侧电极 形成在ZnO基板的氧极性表面上。