公开(公告)号：US08013344B2

公开(公告)日：2011-09-06

申请号：US12186168

申请日：2008-08-05

申请人： Yasuto Miyake ,  Ryoji Hiroyama ,  Masayuki Hata

发明人： Yasuto Miyake ,  Ryoji Hiroyama ,  Masayuki Hata

IPC分类号： H01L27/15

CPC分类号： H01L33/025 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0206 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/173

摘要： A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在包括上表面，下表面和位错集中区域的基板的上表面上形成半导体器件层，以便将第一侧部分靠近上表面部分，以及 第二侧更靠近下表面，通过沿着位错集中区域的至少一部分去除第二侧的基板，在下表面上方露出位错集中区域不存在的部分，并且在第二侧上形成电极 一部分。

公开(公告)号：US07978744B2

公开(公告)日：2011-07-12

申请号：US12236616

申请日：2008-09-24

申请人： Shingo Kameyama ,  Yasuhiko Nomura ,  Ryoji Hiroyama ,  Masayuki Hata

发明人： Shingo Kameyama ,  Yasuhiko Nomura ,  Ryoji Hiroyama ,  Masayuki Hata

IPC分类号： H01S5/028

CPC分类号： H01S5/32341 ,  H01S5/028 ,  H01S5/0282

摘要： One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.

摘要翻译： 氮化物基半导体激光器件的一个面由（0001）的解理面构成，另一个面由（000 1）的解理面构成。 因此，一个面和另一个面分别是Ga极平面和N极平面。 位于光波导中的一个面和另一个面的一部分的一部分构成一对腔面。 在一个面上形成包括氮作为构成元素的第一保护膜。 在另一方面形成包括氧作为构成元素的第二保护膜。

公开(公告)号：US07961768B2

公开(公告)日：2011-06-14

申请号：US12256854

申请日：2008-10-23

申请人： Hiroaki Izu ,  Tsutomu Yamaguchi ,  Hiroki Ohbo ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

发明人： Hiroaki Izu ,  Tsutomu Yamaguchi ,  Hiroki Ohbo ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

IPC分类号： H01S5/00

CPC分类号： H01S5/4025 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48464 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.

摘要翻译： 提供了能够提高激光束的特性并降低光轴调整成本的集成半导体激光装置。 该集成半导体激光器件包括包括第一发射区域并且具有突出部分或凹部的第一半导体激光器元件和包括第二发射区域并且具有凹部或突出部分的第二半导体激光元件。 第一半导体激光元件的突出部或凹部都嵌入第二半导体激光元件的凹部或凸部。

公开(公告)号：US07924898B2

公开(公告)日：2011-04-12

申请号：US12236627

申请日：2008-09-24

申请人： Shingo Kameyama ,  Yasuhiko Nomura ,  Ryoji Hiroyama ,  Masayuki Hata

发明人： Shingo Kameyama ,  Yasuhiko Nomura ,  Ryoji Hiroyama ,  Masayuki Hata

IPC分类号： H01S5/028

CPC分类号： H01S5/32341 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/1082 ,  H01S5/227 ,  H01S5/3202 ,  H01S2301/176

摘要： One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.

摘要翻译： 氮化物基半导体激光器件的一个面和另一个面分别由（0001）的解理面和（000 1）的解理面构成。 因此，一个面和另一个面分别是Ga极平面和N极平面。 位于光波导中的一个面和另一个面的一部分的一部分构成一对腔面。 在一个面上形成包括氧作为构成元素的第一保护膜。 在另一方面形成包括氮作为构成元素的第二保护膜。

公开(公告)号：US07903709B2

公开(公告)日：2011-03-08

申请号：US12357282

申请日：2009-01-21

申请人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

发明人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2201

摘要： A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.

摘要翻译： 半导体激光器件包括衬底和形成在衬底的表面上的半导体层，并且具有沿平行于表面的第一方向延伸的波导，其中波导形成在从半导体的中心接近第一侧的区域 激光装置在与第一方向平行的第二方向上与第一方向相交的第一区域，与波导的与波导的第一侧相反的一侧并且平行于第一方向延伸的第一凹部， 在半导体激光器件的上表面上形成有与第一区域交叉且沿第二方向延伸的波导的小平面的延伸的波导，并且第一区域上的半导体层的厚度小于厚度 的第一区域以外的区域。

公开(公告)号：US07892874B2

公开(公告)日：2011-02-22

申请号：US12495122

申请日：2009-06-30

申请人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

发明人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

IPC分类号： H01L21/00 ,  H01L31/12

CPC分类号： H01L33/0079 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016

摘要： A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.

摘要翻译： 提供了能够抑制光输出特性的降低以及制造成品率的降低的氮化物系发光元件。 这种氮化物系发光器件包括至少含有单一类型金属的导电衬底和具有比金属低的线性膨胀系数的单一类型的无机材料和与导电衬底结合的氮化物基半导体元件层。

公开(公告)号：US20090185594A1

公开(公告)日：2009-07-23

申请号：US12357282

申请日：2009-01-21

申请人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

发明人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

IPC分类号： H01S5/026 ,  H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2201

摘要： A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.

摘要翻译： 半导体激光器件包括衬底和形成在衬底的表面上的半导体层，并且具有沿平行于表面的第一方向延伸的波导，其中波导形成在从半导体的中心接近第一侧的区域 激光装置在与第一方向平行的第二方向上与第一方向相交的第一区域，与波导的与波导的第一侧相反的一侧并且平行于第一方向延伸的第一凹部， 在半导体激光器件的上表面上形成有与第一区域交叉且沿第二方向延伸的波导的小平面的延伸的波导，并且第一区域上的半导体层的厚度小于厚度 的第一区域以外的区域。

公开(公告)号：US20090086783A1

公开(公告)日：2009-04-02

申请号：US12236616

申请日：2008-09-24

申请人： Shingo KAMEYAMA ,  Yasuhiko Nomura ,  Ryoji Hiroyama ,  Masayuki Hata

发明人： Shingo KAMEYAMA ,  Yasuhiko Nomura ,  Ryoji Hiroyama ,  Masayuki Hata

IPC分类号： H01S5/026

CPC分类号： H01S5/32341 ,  H01S5/028 ,  H01S5/0282

摘要： One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.

摘要翻译： 氮化物基半导体激光器件的一个面由（0001）的解理面构成，其另一个面由（000

公开(公告)号：US07488613B2

公开(公告)日：2009-02-10

申请号：US11907649

申请日：2007-10-16

申请人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

发明人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016

摘要： A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.

公开(公告)号：US20070069221A1

公开(公告)日：2007-03-29

申请号：US11525088

申请日：2006-09-22

申请人： Ryoji Hiroyama ,  Teruaki Miyake ,  Yuzuru Miyata

发明人： Ryoji Hiroyama ,  Teruaki Miyake ,  Yuzuru Miyata

IPC分类号： H01L33/00

CPC分类号： H01S5/162 ,  B82Y20/00 ,  H01S5/2009 ,  H01S5/2206 ,  H01S5/2231 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/4087

摘要： A semiconductor laser diode capable of further improving temperature characteristics while sufficiently preventing a laser beam emission end surface portion from thermal destruction through a window structure is obtained. This semiconductor laser diode comprises an active layer having a window structure on a laser beam emission end surface portion and a p-type layer, formed on the surface of the active layer, containing Mg and Zn as impurities. The impurity concentration of Zn contained in the p-type layer is larger than the impurity concentration of Mg contained in the p-type layer.

摘要翻译： 可以获得能够进一步提高温度特性的半导体激光二极管，同时充分防止激光束发射端面部分通过窗口结构的热破坏。 该半导体激光二极管包括在激光束发射端面部分具有窗口结构的有源层和形成在有源层的表面上的包含Mg和Zn作为杂质的p型层。 包含在p型层中的Zn的杂质浓度大于p型层中所含的Mg的杂质浓度。