公开(公告)号：US20100041179A1

公开(公告)日：2010-02-18

申请号：US12539289

申请日：2009-08-11

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H01L21/20 ,  H01L21/31 ,  H01L21/3205

CPC classification number: H01L21/76224 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/0262 ,  H01L21/3141 ,  H01L21/31604

Abstract: A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.

Abstract translation: 通过在具有凹部的基板上形成第一材料层来制造基板结构，使用与第一材料反应的第二材料从基板的除了凹部的部分除去第一材料层，并从 所述第一材料层使用与所述第一材料反应的第三材料。 制造器件的方法可以包括形成衬底结构的方法。

公开(公告)号：US20100006145A1

公开(公告)日：2010-01-14

申请号：US12498298

申请日：2009-07-06

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H01L31/00 ,  H01L31/18

CPC classification number: H01L31/02168 ,  H01L31/02165 ,  H01L31/022466 ,  Y02E10/50

Abstract: Example embodiments relate to a solar cell and a method for fabricating the same, and more particularly, to a solar cell in which a substrate capable of functioning as electrode is used and a method for fabricating the same. The solar cell may include a substrate and a semiconductor layer laminated on the substrate. The solar cell may include a conductive substrate. The substrate may be a flexible substrate having a coefficient of thermal expansion comparable to that of the semiconductor layer. The semiconductor layer may be formed on the substrate. The solar cell may include a front electrode formed on the semiconductor layer.

Abstract translation: 示例性实施例涉及一种太阳能电池及其制造方法，更具体地说，涉及一种使用能够起电极作用的基板的太阳能电池及其制造方法。 太阳能电池可以包括层叠在基板上的基板和半导体层。 太阳能电池可以包括导电基板。 衬底可以是具有与半导体层的热膨胀系数相当的热膨胀系数的柔性衬底。 半导体层可以形成在基板上。 太阳能电池可以包括形成在半导体层上的前电极。

公开(公告)号：US07430751B2

公开(公告)日：2008-09-30

申请号：US11185876

申请日：2005-07-21

Applicant: Sang-in Lee

Inventor： Sang-in Lee

IPC: G11B33/12

CPC classification number: G06F1/184 ,  G06F1/187 ,  G11B25/10 ,  G11B33/022 ,  G11B33/027

Abstract: A data recording/reproducing apparatus that includes an open front housing having a base frame and a cover frame, a recording/reproducing unit installed in the housing to record and/or reproduce data from a predetermined recording medium, a circuit board installed parallel to the recording/reproducing unit in the housing, a front unit connected to the open front of the housing to support operation buttons, a first locking unit which locks the front unit and the recording/reproducing unit, and a second locking unit which locks the front unit and the housing at a position corresponding to the circuit board.

Abstract translation: 一种数据记录/再现装置，包括具有基架和盖框架的开放前壳体，安装在壳体中以从预定记录介质记录和/或再现数据的记录/再现单元，与 记录/再现单元，连接到壳体的开口前部以支撑操作按钮的前单元，锁定前单元和记录/再现单元的第一锁定单元，以及锁定前单元的第二锁定单元 并且在与电路板相对应的位置处的壳体。

公开(公告)号：US20060228888A1

公开(公告)日：2006-10-12

申请号：US10525122

申请日：2003-08-18

Applicant: Sang-In Lee ,  Yoshihide Senzaki ,  Sang-Kyoo Lee

Inventor： Sang-In Lee ,  Yoshihide Senzaki ,  Sang-Kyoo Lee

IPC: H01L21/44 ,  H01L51/40

CPC classification number: H01L21/02205 ,  C23C16/401 ,  C23C16/45531 ,  H01L21/02148 ,  H01L21/02153 ,  H01L21/02159 ,  H01L21/02216 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31612 ,  H01L21/31645

Abstract: The present invention relates to the atomic layer deposition (“ALD”) of high k dielectric layers of metal silicates, including hafnium silicate. More particularly, the present invention relates to the ALD formation of metal silicates using metal organic precursors, silicon organic precursors and ozone. Preferably, the metal organic precursor is a metal alkyl amide and the silicon organic precursor is a silicon alkyl amide.

Abstract translation: 本发明涉及包含硅酸铪的金属硅酸盐的高k电介质层的原子层沉积（“ALD”）。 更具体地，本发明涉及使用金属有机前体，硅有机前体和臭氧的金属硅酸盐的ALD形成。 优选地，金属有机前体是金属烷基酰胺，硅有机前体是硅烷基酰胺。

公开(公告)号：US20060178019A1

公开(公告)日：2006-08-10

申请号：US10524980

申请日：2003-08-18

Applicant: Yoshihide Senzaki ,  Sang-In Lee ,  Sang-Kyoo Lee

Inventor： Yoshihide Senzaki ,  Sang-In Lee ,  Sang-Kyoo Lee

IPC: H01L21/31

CPC classification number: C23C16/45525 ,  C23C16/308 ,  C23C16/401 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/31612

Abstract: The present invention relates to low temperature (i.e., less than about 450° C.) chemical vapor deposition (CVD) and low temperature atomic layer deposition (ALD) processes for forming silicon oxide and/or silicon oxynitride derived from silicon organic precursors and ozone. The processes of the invention provide good step coverage. The invention can be utilized to deposit both high-k and low-k dielectrics.

Abstract translation: 本发明涉及用于形成由硅有机前体和臭氧衍生的氧化硅和/或氧氮化硅的低温（即小于约450℃）的化学气相沉积（CVD）和低温原子层沉积（ALD）工艺 。 本发明的方法提供良好的步骤覆盖。 本发明可用于沉积高k和低k电介质。

公开(公告)号：US20060016671A1

公开(公告)日：2006-01-26

申请号：US10983590

申请日：2004-11-09

Applicant: Sang-in Lee

Inventor： Sang-in Lee

IPC: H01H13/70

CPC classification number: H01H25/041

Abstract: A switching device of an image recording and replaying apparatus, having: a frame with a button sheet having a guide boss opening positioned in a center of the button sheet and operation boss openings positioned around the guide boss opening, pairs of the operation boss openings being oppositely disposed with respect to the guide boss opening; a switchboard placed on a first side of the frame and having tact switches facing respective operation boss openings; an integrated button disposed to be elastically biased toward a second side of the frame opposite the first side, and having a guide boss inserted into the guide boss opening and operation bosses inserted into respective operation boss openings; and a fixation holder disposed on the guide boss to fix the integrated button to the frame, such that the operation bosses continuously contact with corresponding tact switches.

Abstract translation: 一种图像记录和重放装置的切换装置，具有：具有按钮片的框架，其具有位于按钮片的中心的引导凸起开口和位于引导凸起开口周围的操作凸起开口，成对的操作凸起开口为 相对于导向凸起开口相对设置; 布置在所述框架的第一侧上并且具有面向相应的操作凸起开口的触觉开关的开关板; 集成按钮，被设置为朝向与第一侧相对的框架的第二侧弹性偏置，并且具有插入到引导凸台开口中的引导凸起和插入到相应的操作凸起开口中的操作凸起; 以及设置在所述引导凸台上以将所述集成按钮固定到所述框架的固定架，使得所述操作凸台与相应的轻触开关持续接触。

公开(公告)号：US20050175789A1

公开(公告)日：2005-08-11

申请号：US10519331

申请日：2003-06-23

Applicant: Aubrey Helms Jr ,  Kerem Kapkin ,  Sang-In Lee ,  Yoshihide Senzaki

Inventor： Aubrey Helms Jr ,  Kerem Kapkin ,  Sang-In Lee ,  Yoshihide Senzaki

IPC: H01L21/302 ,  C23C16/44 ,  C23C16/455 ,  C23C16/48 ,  H01L21/314 ,  H01L21/316 ,  G21H1/00 ,  H01F41/00

CPC classification number: H01L21/0228 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/482 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/02277 ,  H01L21/02301 ,  H01L21/3141 ,  H01L21/31645

Abstract: A method for energy-assisted atomic layer deposition and removal of a dielectric film are provided. In one embodiment a substrate is placed into a reaction chamber and a gaseous precursor is introduced into the reaction chamber. Energy is provide by a pulse of electromagnetic radiation which forms radical species of the gaseous precursor. The radical species react with the surface of the substrate to form a radical terminated surface on the substrate. The reaction chamber is purged and a second gaseous precursor is introduced. A second electromagnetic radiation pulse is initiated and forms second radical species. The second radical species of the second gas react with the surface to form a film on the substrate. Alternately, the gaseous species can be chosen to produce radicals that result in the removal of material from the surface of the substrate.

Abstract translation: 提供了一种用于能量辅助原子层沉积和去除电介质膜的方法。 在一个实施方案中，将基底置于反应室中，并将气态前体引入反应室。 通过电磁辐射的脉冲提供能量，其形成气态前体的自由基物质。 自由基物质与基底的表面反应以在基底上形成基团封端的表面。 吹扫反应室，并引入第二气态前体。 启动第二电磁辐射脉冲并形成第二自由基物质。 第二气体的第二种类物质与表面反应以在基材上形成膜。 或者，可以选择气态物质以产生导致从衬底表面去除材料的自由基。

公开(公告)号：US06576053B1

公开(公告)日：2003-06-10

申请号：US09679559

申请日：2000-10-06

Applicant: Yeong-kwan Kim ,  Young-wook Park ,  Jae-soon Lim ,  Sung-je Choi ,  Sang-in Lee

Inventor： Yeong-kwan Kim ,  Young-wook Park ,  Jae-soon Lim ,  Sung-je Choi ,  Sang-in Lee

IPC: C30B2504

CPC classification number: H01L21/31691 ,  C30B25/02 ,  C30B29/20 ,  H01L21/316

Abstract: In a method of forming a thin film using an atomic layer deposition (ALD) method, a thin film is formed on a substrate in cycles. Each cycle includes injecting a first reactant including an atom that forms the thin film and a ligand into a reaction chamber that includes the substrate, purging the first reactant, injecting a second reactant into the reaction chamber, and purging the second reactant. The thin film is formed by a chemical reaction between the atom that forms the thin film and a second reactant whose binding energy with respect to the atom that forms the thin film is larger than the binding energy of the ligand with respect to the atom that forms the thin film and the generation of by-products is prevented. The generation of a hydroxide by-product in the thin film is suppressed by using a material that does not include a hydroxide as the second reactant, purging the second reactant, and reacting the second reactant with a third reactant that includes hydroxide. After purging the second reactant, the third reactant for removing impurities and improving the stoichiometry of the thin film is injected and purged. In this way, it is possible to obtain a thin film that does not include impurities and whose stoichiometry is excellent.

Abstract translation: 在使用原子层沉积（ALD）法形成薄膜的方法中，在基板上循环形成薄膜。 每个循环包括将包括形成薄膜的原子和配体的第一反应物注入到包括基板的反应室中，清洗第一反应物，将第二反应物注入反应室，以及清除第二反应物。 薄膜由形成薄膜的原子与第二反应物之间的化学反应形成，第二反应物的结合能相对于形成薄膜的原子的结合能大于配体相对于形成的原子的结合能 防止了薄膜和副产物的产生。 通过使用不包含氢氧化物作为第二反应物的材料，吹扫第二反应物，并使第二反应物与包含氢氧化物的第三反应物反应，可以抑制薄膜中氢氧化物副产物的产生。 在清洗第二反应物之后，注入和清除用于除去杂质的第三反应物和改善薄膜的化学计量。 以这种方式，可以获得不含杂质的化学计量优异的薄膜。

公开(公告)号：US06570253B1

公开(公告)日：2003-05-27

申请号：US09686623

申请日：2000-10-12

Applicant: Jae-soon Lim ,  Yeong-kwan Kim ,  Heung-soo Park ,  Sang-in Lee

Inventor： Jae-soon Lim ,  Yeong-kwan Kim ,  Heung-soo Park ,  Sang-in Lee

IPC: H01G904

CPC classification number: H01L28/40 ,  H01L21/3142 ,  H01L21/31604 ,  H01L21/31616

Abstract: A multi-layer film for a thin film structure, a capacitor using the multi-layer film and methods for fabricating the multi-layer film and the capacitor, the multi-layer film including a composition transition layer between a lower material layer and an upper material layer respectively formed of different elements whose interaction parameters are different from each other, the composition transition layer containing both elements of the lower and upper material layers, the concentration of the composition transition layer gradually varying from the portion of the composition transition layer contacting with the lower material layer to the portion of the composition transition layer contacting with the upper material layer such that the concentration of the element of the upper material layer is relatively large in its portion adjacent to the upper material layer, each of the lower and upper material layers being formed of an oxide or nitride material of aluminum, silicon, zirconium, cerium, titanium, yttrium, tantalum or niobium.

Abstract translation: 用于薄膜结构的多层膜，使用该多层膜的电容器以及制造多层膜和电容器的方法，所述多层膜包括在下层材料层和上层之间的组成过渡层 分别由相互作用参数彼此不同的不同元素形成的材料层，组成过渡层包含下部和上部材料层的两个元素，组成过渡层的浓度从组成过渡层的部分逐渐变化， 下部材料层到组合物过渡层的与上部材料层接触的部分，使得上部材料层的元素的浓度在与上部材料层相邻的部分中相对较大，每个下部和上部材料 层由铝，硅，锆，铈的氧化物或氮化物材料形成 钛，钛，钇，钽或铌。

公开(公告)号：US06013576A

公开(公告)日：2000-01-11

申请号：US902880

申请日：1997-07-30

Applicant: Jae-eung Oh ,  Sang-in Lee ,  Chang-soo Park

Inventor： Jae-eung Oh ,  Sang-in Lee ,  Chang-soo Park

IPC: C23C16/02 ,  C23C16/34 ,  C23C16/50 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  H01L21/205

CPC classification number: H01L21/76864 ,  C23C16/0227 ,  C23C16/34 ,  H01L21/76841

Abstract: A metal nitride layer is formed on a substrate by exposing the substrate to a mixture including a nitrogen-containing organometallic gas and a hydrogen plasma to form a metal nitride layer on the substrate. The nitrogen-containing organometallic gas may comprise penta dimethyl amido tantalum (Ta(N(CH.sub.3).sub.2).sub.5, and the metal nitride layer may be formed by exposing comprises the step of exposing the substrate to a mixture including penta dimethyl amido tantalum gas (Ta(N(CH.sub.3).sub.2).sub.5 and a hydrogen plasma at a temperature greater than 300.degree. C., more preferably, at a temperature of 300.degree. C. to 750.degree. C. and a pressure of 0.5 torr to 1.5 torr. The penta dimethyl amido tantalum gas (Ta(N(CH.sub.3).sub.2).sub.5 is preferably provided to a chamber in which the substrate is placed at a mass flow rate of 50 sccm to 150 sccm, and the hydrogen plasma referably provided to the chamber at a mass flow rate of 30 sccm to 100 sccm. The hydrogen plasma may be produced external to the chamber in an atmosphere comprising hydrogen and an inert gas such as argon. A tantalum nitride (Ta.sub.3 N.sub.5 layer having a resistivity less than 1.times.10.sup.4 .mu..OMEGA.-cm may thereby be formed.

Abstract translation: 通过将衬底暴露于包含含氮有机金属气体和氢等离子体的混合物在衬底上形成金属氮化物层，以在衬底上形成金属氮化物层。 含氮有机金属气体可以包含五聚二甲基氨基钽（Ta（N（CH 3）2）5，并且金属氮化物层可以通过曝光形成包括将基底暴露于包括五聚二甲基氨基钽气体 Ta（N（CH 3）2）5和氢等离子体，温度高于300℃，更优选在300℃至750℃的温度下，压力为0.5托至1.5托。 五元二甲基氨基钽气体（Ta（N（CH 3）2）5优选设置在其中以50sccm至150sccm的质量流速放置基板的室中，并且氢气等离子体可以在 质量流量为30sccm至100sccm，氢气等离子体可以在包含氢气和惰性气体如氩气的气氛中在室外产生，氮化钽（具有小于1×10 4μM欧姆/ cm的电阻率的Ta 3 N 5层可以 从而形成。