Abstract:
A thermoelectric material including a composition according to Chemical Formula 1: (Bia-xSb1-a-yMb)2-i(TecSe1-c)3-j Chemical Formula 1 wherein M is an element of Group 13, 0≦a≦1, 0
Abstract:
A thermoelectric material having a high performance index and a thermoelectric module and a thermoelectric device including the thermoelectric material, and more particularly, to a thermoelectric material having a high Seebeck coefficient, high electrical conductivity, and low thermal conductivity and a thermoelectric module and a thermoelectric device including the thermoelectric material.
Abstract:
A conductive paste including a combination of: a conductive powder, a metallic glass, and a dispersing agent represented by the following Chemical Formula 1 R1-L1-(OR2)n—(OR3)m—O-L2-COOH. Chemical Formula 1 In Chemical Formula 1, R1 is a substituted or unsubstituted C5 to C30 branched alkyl group, R2 and R3 are each independently a substituted or unsubstituted C2 to C5 alkylene group, L1 is a substituted or unsubstituted C6 to C30 arylene group, L2 is a single bond or a C1 to C4 alkylene group, n and m are each independently integers ranging from 0 to about 30, and 3≦n+m≦30.
Abstract:
A thermoelectric material includes a compound represented by Formula 1: AaRbG3±n Formula 1 wherein component A includes at least one element selected from a Group 1 element, a Group 2 element, and a metal of Groups 3 to 12, component R is a rare-earth element, component G includes at least one element selected from sulfur (S), selenium (Se), tellurium (Te), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), carbon (C), silicon (Si), germanium (Ge), tin (Sn), boron (B), aluminum (Al), gallium (Ga), and indium (In), 0
Abstract translation:热电材料包括由式1表示的化合物:AaRbG3±n式1其中组分A包括选自第1族元素,第2族元素和第3〜12族金属中的至少一种元素,R为稀有金属 组分G包括选自硫(S),硒(Se),碲(Te),磷(P),砷(As),锑(Sb),铋(Bi) C),硅(Si),锗(Ge),锡(Sn),硼(B),铝(Al),镓(Ga)和铟(In),0 ,0&nlE; n <1。
Abstract:
A method of preparing a metal-doped oxide, the method including: preparing a precursor solution including a zirconium precursor or cerium precursor, a dopant metal precursor, a solvent, and a chloride salt; and heat-treating the precursor solution to prepare the metal-doped oxide.Also an oxide including: a metal-doped zirconia or metal-doped ceria; and
Abstract:
A solid oxide electrolyte including an oxygen ion conducting solid solution, wherein the solid solution is represented by Formula 1 below: Zr1-x-y-zMaxMbyMczO2-δ Formula 1 wherein x is greater than 0 and less than about 0.3, y is greater than 0 and less than about 0.1, z is greater than 0 and less than about 0.1, δ is selected to make the solid solution ionically neutral, Ma, Mb, and Mc are each independently a metal selected from the group consisting of elements of Groups 3, Groups 5 through 13, and Group 14, and an ionic radius of each of Ma+3, Mb+3, and Mc+3 are different from each other.
Abstract:
Disclosed is a rechargeable lithium polymer battery comprising a negative electrode including a negative active material layer deposited on a substrate, a positive electrode including a positive active material; and a polymer electrolyte including a lithium salt, an organic solvent, and a polymer.
Abstract:
Provided is a method of preparing a lithium metal anodeincluding forming a current collector on a substrate that includes a release component; depositing a lithium metal on the current collector; and releasing the current collector with the deposited lithium metal from the substrate. The method may produce a lithium metal anode with a clean lithium surface and a current collector with a small thickness. The lithium metal anode may be used to increase the energy density of a battery.
Abstract:
A photosensitive polyimide composition, a polyimide film, and a semiconductor device using the same are disclosed. The photosensitive polyimide composition can be cured by heating. A polyhydroxyimide is used as a base resin and can be mixed with a photoacid generator and a cross-linking agent having two or more vinylether groups. A film of the photosensitive polyimide composition can be developed by treatment with an alkaline aqueous solution. Embodiments of the invention enable improvement in production yield and reliability in a highly-integrated memory semiconductor packaging processes.