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    Formation of low resistance via contacts in interconnect structures
    12.
    发明申请
    Formation of low resistance via contacts in interconnect structures 审中-公开
    通过互连结构中的触点形成低电阻

    公开(公告)号：US20050064701A1

    公开(公告)日：2005-03-24

    申请号：US10665584

    申请日：2003-09-19

    Applicant: Timothy Dalton ,  Stephen Gates

    Inventor： Timothy Dalton ,  Stephen Gates

    IPC: H01L21/306 ,  H01L21/311 ,  H01L21/768 ,  H01L21/4763

    CPC classification number: H01L21/02063 ,  H01L21/76814

    Abstract: A method of fabricating an interconnect structure including the steps of: forming a porous or dense low k dielectric layer on a substrate; forming single or dual damascene etched openings in the low k dielectric; placing the substrate in a process chamber on a cold chuck at a temperature about −200° C. to about 25° C.; adding to the process chamber a condensable cleaning agent (CCA) to condense a layer of CCA within the etched openings on the substrate; and activating at a temperature about −200° C. to about 25° C. Also provided is an interconnect structure having a substrate, a conductive material disposed on the substrate, a porous or dense low k dielectric layer disposed on the conductive material, wherein the low k dielectric layer has a single or dual damascene etched openings that expose a surface of the conductive material, and metallic lines and vias etched onto the low k dielectric layer; wherein the exposed conductive material has been treated with a CCA and activated in the cold to remove oxide, oxygen and carbon containing residues from the surface of the conductive material.

    Abstract translation: 一种制造互连结构的方法，包括以下步骤：在衬底上形成多孔或致密的低k电介质层; 在低k电介质中形成单或双镶嵌蚀刻孔; 将基板放置在温度约-200℃至约25℃的冷卡盘上的处理室中; 向处理室中加入可冷凝清洁剂（CCA），以在衬底上的蚀刻开口内冷凝CCA层; 并且在约-200℃至约25℃的温度下活化。还提供了具有基底，设置在基底上的导电材料，设置在导电材料上的多孔或致密的低k电介质层的互连结构，其中 低k电介质层具有暴露导电材料的表面的单个或双镶嵌蚀刻开口以及蚀刻到低k电介质层上的金属线和通孔; 其中所述暴露的导电材料已经用CCA处理并且在冷中被活化以从所述导电材料的表面去除氧化物，含氧和碳的残余物。

    Regulation of immune response
    14.
    发明授权
    Regulation of immune response 失效
    调节免疫反应

    公开(公告)号：US5559107A

    公开(公告)日：1996-09-24

    申请号：US325151

    申请日：1994-10-20

    Applicant: Stephen Gates ,  Roger M. Loria

    Inventor： Stephen Gates ,  Roger M. Loria

    IPC: A61K31/59 ,  A61K31/56

    CPC classification number: A61K31/568 ,  A61K31/59

    Abstract: Androsta-5,7-diene-3.beta.,17.beta.-diol, its esters and ethers and related compounds wherein ring opening of the steroid ring system between carbons 9 and 10 has occurred are active as regulators of immune response and cell proliferation and differentiation.

    Abstract translation: 雄激素-5,7-二烯-3β，17β-二醇，其酯和醚及其相关化合物，其中已经发生碳9和10之间的类固醇环体系的开环作为免疫应答和细胞增殖和分化的调节剂是有活性的 。

    Creating Taxonomies And Training Data For Document Categorization
    16.
    发明申请
    Creating Taxonomies And Training Data For Document Categorization 有权
    为文档分类创建分类和培训数据

    公开(公告)号：US20070185901A1

    公开(公告)日：2007-08-09

    申请号：US11734528

    申请日：2007-04-12

    Applicant: Stephen Gates

    Inventor： Stephen Gates

    IPC: G06F7/00

    CPC classification number: G06F17/3071 ,  Y10S707/99935 ,  Y10S707/99943

    Abstract: Methods, apparatus and systems are provided to generate from a set of training documents a set of training data and a set of features for a taxonomy of categories. In this generated taxonomy the degree of feature overlap among categories is minimized in order to optimize use with a machine-based categorizer. However, the categories still make sense to a human because a human makes the decisions regarding category definitions. In an example embodiment, for each category, a plurality of training documents selected using Web search engines is generated, the documents winnowed to produce a more refined set of training documents, and a set of features highly differentiating for that category within a set of categories (a supercategory) extracted. This set of training documents or differentiating features is used as input to a categorizer, which determines for a plurality of test documents the plurality of categories to which they best belong.

    Abstract translation: 提供方法，装置和系统以从一组训练文件中产生一组训练数据和用于分类分类的一组特征。 在这个生成的分类法中，最小化类别之间的特征重叠程度，以优化与基于机器的分类器的使用。 然而，类别对人类来说仍然是有意义的，因为人类对类别定义做出决定。 在一个示例性实施例中，对于每个类别，生成使用Web搜索引擎选择的多个训练文档，该文档被确定为产生更精细的一组训练文档，以及一组在一组类别内对该类别进行高度区分的特征 （超级类别）提取。 该组训练文档或区分特征被用作分类器的输入，分类器确定多个测试文档最佳属性的多个类别。

    Ultra low K (ULK) SiCOH film and method
    18.
    发明申请
    Ultra low K (ULK) SiCOH film and method 有权
    超低K（ULK）SiCOH膜及方法

    公开(公告)号：US20050276930A1

    公开(公告)日：2005-12-15

    申请号：US10390801

    申请日：2003-03-18

    Applicant: Stephen Gates ,  Alfred Grill

    Inventor： Stephen Gates ,  Alfred Grill

    IPC: C09C1/00 ,  H01L21/312 ,  H01L21/316 ,  C23C16/24

    CPC classification number: H01L21/31695 ,  H01L21/02126 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/249953 ,  Y10T428/249978 ,  H01L2924/00

    Abstract: The present invention provides a multiphase, ultra low k film which exhibits improved elastic modulus and hardness as well as various methods for forming the same. The multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constant of about 2.4 or less, nanosized pores or voids, an elastic modulus of about 5 or greater and a hardness of about 0.7 or greater. A preferred multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, has a dielectric constant of about 2.2 or less, nanosized pores or voids, an elastic modulus of about 3 or greater and a hardness of about 0.3 or greater. The multiphase, ultra low k film is prepared by plasma enhanced chemical vapor deposition in which one of the following alternatives is utilized: at least one precursor gas comprising siloxane molecules containing at least three Si—O bonds; or at least one precursor gas comprising molecules containing reactive groups that are sensitive to e-beam radiation. Electronic structures including the multiphase, ultra low k film are also disclosed.

    Abstract translation: 本发明提供了一种多相超低k膜，其具有改进的弹性模量和硬度以及其形成方法。 多相超低k电介质膜包括Si，C，O和H的原子，介电常数约为2.4或更小，纳米孔或空隙，弹性模量约5或更大，硬度约为0.7或更大 。 优选的多相超低k电介质膜包括Si，C，O和H的原子，具有约2.2或更小的介电常数，纳米孔或空隙，约3或更大的弹性模量和约0.3的硬度或 更大 多相超低k膜通过等离子体增强化学气相沉积制备，其中使用以下替代物之一：至少一种包含含有至少三个Si-O键的硅氧烷分子的前体气体; 或包含对电子束辐射敏感的含有反应性基团的分子的至少一种前体气体。 还公开了包括多相超低k膜的电子结构。

    Formation of low resistance via contacts in interconnect structures
    19.
    发明申请
    Formation of low resistance via contacts in interconnect structures 有权
    通过互连结构中的触点形成低电阻

    公开(公告)号：US20050266681A1

    公开(公告)日：2005-12-01

    申请号：US11182445

    申请日：2005-07-15

    Applicant: Timothy Dalton ,  Stephen Gates

    Inventor： Timothy Dalton ,  Stephen Gates

    IPC: H01L21/306 ,  H01L21/311 ,  H01L21/768 ,  H01L21/4763

    CPC classification number: H01L21/02063 ,  H01L21/76814

    Abstract: A method of fabricating BEOL interconnect structures on a semiconductor device having a plurality of via contacts with low via contact resistance is provided. The method includes the steps of: a) forming a porous or dense low k dielectric layer on a substrate; b) forming single or dual damascene etched openings in the low k dielectric; c) placing the substrate in a process chamber on a cold chuck at a temperature about −200° C. to about 25° C.; d) adding to the process chamber a condensable cleaning agent (CCA) to condense a layer of CCA within the etched openings on the substrate; and e) performing an activation step while the wafer remains cold at a temperature of about −200° C. to about 25° C. The via contacts are very stable during thermal cycles and during operation of the semiconductor device.

    Abstract translation: 提供了在具有多个通孔接触电阻低的半导体器件上制造BEOL互连结构的方法。 该方法包括以下步骤：a）在衬底上形成多孔或致密的低k电介质层; b）在低k电介质中形成单个或双镶嵌蚀刻开口; c）将基板放置在约-200℃至约25℃的温度下的冷卡盘上的处理室中; d）向处理室中加入可冷凝清洁剂（CCA），以在衬底上的蚀刻开口内冷凝CCA层; 以及e）当晶片在约-200℃至约25℃的温度下保持冷时，执行激活步骤。在热循环期间和在半导体器件的操作期间，通孔触点是非常稳定的。

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