公开(公告)号：US20080105889A1

公开(公告)日：2008-05-08

申请号：US11976791

申请日：2007-10-29

Applicant: Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

Inventor： Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

IPC: H01L33/00

CPC classification number: H01L33/0079 ,  H01L33/22 ,  H01L33/32

Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

Abstract translation: 提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构 在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

公开(公告)号：US20080048206A1

公开(公告)日：2008-02-28

申请号：US11742818

申请日：2007-05-01

Applicant: Su Yeol LEE ,  Bang Won OH ,  Doo Go BAIK ,  Tae Sung JANG ,  Jong Gun WOO ,  Seok Beom CHOI ,  Sang Ho YOON ,  Dong Woo KIM ,  In Tae YEO

Inventor： Su Yeol LEE ,  Bang Won OH ,  Doo Go BAIK ,  Tae Sung JANG ,  Jong Gun WOO ,  Seok Beom CHOI ,  Sang Ho YOON ,  Dong Woo KIM ,  In Tae YEO

IPC: H01L33/00 ,  H01L21/20

CPC classification number: H01L33/387 ,  H01L33/20 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light emission structures.

Abstract translation: 制造垂直GaN基LED的方法包括：形成其中n型GaN基半导体层，有源层和p型GaN基半导体层依次层压在基板上的发光结构; 蚀刻发光结构，使得发光结构被分为LED单元; 在每个划分的发光结构上形成p电极; 在分开的发光结构之间填充非导电材料; 在所得结构上形成金属种子层; 在所述金属种子层上形成除了所述发光结构之间的区域的第一镀层; 在所述第一镀层之间的所述金属种子层上形成第二镀层; 将衬底与发光结构分离; 去除通过分离衬底而暴露的发光结构之间的非导电材料; 在n型GaN基半导体层上形成n电极; 以及去除所述发光结构之间的所述金属种子层和所述第二镀层的部分。

公开(公告)号：US20080012028A1

公开(公告)日：2008-01-17

申请号：US11822186

申请日：2007-07-03

Applicant: Sang Ho Yoon ,  Su Yeol Lee ,  Dae Yeon Kim

Inventor： Sang Ho Yoon ,  Su Yeol Lee ,  Dae Yeon Kim

IPC: H01L33/00

CPC classification number: H01L33/10 ,  G02F1/13362 ,  H01L33/08 ,  H01L33/20

Abstract: A polarized semiconductor light emitting device includes a semiconductor structure having a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer sequentially stacked. Also, the semiconductor structure further includes a plurality of light guide parts defined by a plurality of grooves arranged along a predetermined direction. The grooves extend from the second conductivity semiconductor layer with a depth reaching at least the active layer, and the light guide parts have a length greater than a width thereof to selectively emit a polarized component in a length direction thereof.

Abstract translation: 偏振半导体发光器件包括具有依次堆叠的第一导电半导体层，有源层和第二导电半导体层的半导体结构。 此外，半导体结构还包括由沿着预定方向布置的多个槽限定的多个导光部。 凹槽从第二导电半导体层延伸到至少达到有源层的深度，并且导光部分的长度大于其宽度，以在其长度方向上选择性地发射偏振分量。

公开(公告)号：US20070267640A1

公开(公告)日：2007-11-22

申请号：US11436651

申请日：2006-05-19

Applicant: Jae Hoon Lee ,  Hee Seok Choi ,  Seok Beom Choi ,  Jeong Tak Oh ,  Su Yeol Lee

Inventor： Jae Hoon Lee ,  Hee Seok Choi ,  Seok Beom Choi ,  Jeong Tak Oh ,  Su Yeol Lee

IPC: H01L33/00

CPC classification number: H01L33/14 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0083

Abstract: The present invention relates to a semiconductor light emitting diode. The semiconductor light emitting diode includes a substrate; an n-type nitride semiconductor layer that is formed on the substrate; an active layer that is formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer that is formed on the active layer; a first undoped GaN layer that is formed on the p-type nitride semiconductor layer; an AlGaN layer that is formed on the first undoped GaN layer so as to provide a two-dimensional electron gas layer to the interface with the first undoped GaN layer; a second undoped GaN layer that is formed on the AlGaN layer and has irregularities such that the light generated in the active layer is not internally reflected toward the active layer; a p-type transparent electrode that is formed on the second undoped GaN layer; and an n-type electrode and p-type electrode that are formed to be respectively connected onto the n-type nitride semiconductor layer and the p-type transparent electrode.

Abstract translation: 本发明涉及一种半导体发光二极管。 半导体发光二极管包括基板; 形成在所述基板上的n型氮化物半导体层; 形成在n型氮化物半导体层上的有源层; 形成在有源层上的p型氮化物半导体层; 在p型氮化物半导体层上形成的第一未掺杂GaN层; AlGaN层，形成在第一未掺杂的GaN层上，以便向与第一未掺杂GaN层的界面提供二维电子气层; 第二未掺杂的GaN层，其形成在AlGaN层上并且具有凹凸，使得在有源层中产生的光不向有源层内部反射; 形成在第二未掺杂GaN层上的p型透明电极; 以及形成为分别连接在n型氮化物半导体层和p型透明电极上的n型电极和p型电极。

公开(公告)号：US08664020B2

公开(公告)日：2014-03-04

申请号：US12620928

申请日：2009-11-18

Applicant: Tae Sung Jang ,  Su Yeol Lee ,  Jong Gun Woo

Inventor： Tae Sung Jang ,  Su Yeol Lee ,  Jong Gun Woo

IPC: H01L21/00

CPC classification number: H01L33/20 ,  H01L33/22

Abstract: Disclosed is a semiconductor light emitting device, and a method of manufacturing the same. The semiconductor light emitting device includes a first conductivity type semiconductor layer, an active layer disposed on the top of the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the top of the active layer and comprising light extraction patterns in the top thereof, the light extraction patterns each having a columnar portion and a hemispherical top portion.

Abstract translation: 公开了一种半导体发光器件及其制造方法。 半导体发光器件包括第一导电类型半导体层，设置在第一导电类型半导体层的顶部上的有源层和设置在有源层的顶部上的第二导电类型半导体层，并且包括在第 其顶部具有各自具有柱状部分和半球形顶部部分的光提取图案。

公开(公告)号：US08124997B2

公开(公告)日：2012-02-28

申请号：US12756528

申请日：2010-04-08

Applicant: Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

Inventor： Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

IPC: H01L31/0232

CPC classification number: H01L33/0079 ,  H01L33/22 ,  H01L33/32

Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

Abstract translation: 提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构 在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

公开(公告)号：US20100133570A1

公开(公告)日：2010-06-03

申请号：US12620928

申请日：2009-11-18

Applicant: Tae Sung JANG ,  Su Yeol Lee ,  Jong Gun Woo

Inventor： Tae Sung JANG ,  Su Yeol Lee ,  Jong Gun Woo

IPC: H01L33/00 ,  H01L21/30

CPC classification number: H01L33/20 ,  H01L33/22

Abstract: Disclosed is a semiconductor light emitting device, and a method of manufacturing the same. The semiconductor light emitting device includes a first conductivity type semiconductor layer, an active layer disposed on the top of the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the top of the active layer and comprising light extraction patterns in the top thereof, the light extraction patterns each having a columnar portion and a hemispherical top portion.

Abstract translation: 公开了一种半导体发光器件及其制造方法。 半导体发光器件包括第一导电类型半导体层，设置在第一导电类型半导体层的顶部上的有源层和设置在有源层的顶部上的第二导电类型半导体层，并且包括在第 其顶部具有各自具有柱状部分和半球形顶部部分的光提取图案。

公开(公告)号：US07479661B2

公开(公告)日：2009-01-20

申请号：US11435751

申请日：2006-05-18

Applicant: Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

Inventor： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

IPC: H01L33/00

CPC classification number: H01L33/14 ,  H01L33/32

Abstract: The invention provides a nitride semiconductor device and a manufacturing method thereof. In the invention, n-type and p-type nitride semiconductor layers are formed on a substrate, and an active layer is formed therebetween. The n-type nitride semiconductor layers include first and second n-type GaN layers disposed in the order of distance from the active layer. In addition, in the nitride semiconductor device of the invention, an AlxGal-xN layer, where 0

Abstract translation: 本发明提供一种氮化物半导体器件及其制造方法。 在本发明中，在衬底上形成n型和p型氮化物半导体层，并且在它们之间形成有源层。 n型氮化物半导体层包括以距离有源层的距离的顺序设置的第一和第二n型GaN层。 此外，在本发明的氮化物半导体器件中，在第一和第二n型GaN层之间插入有0

公开(公告)号：US07372078B2

公开(公告)日：2008-05-13

申请号：US11581003

申请日：2006-10-16

Applicant: Tae Sung Jang ,  Su Yeol Lee ,  Seok Beom Choi

Inventor： Tae Sung Jang ,  Su Yeol Lee ,  Seok Beom Choi

IPC: H01L33/00

CPC classification number: H01L33/46 ,  H01L33/0079 ,  H01L33/385

Abstract: A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a p-electrode formed under the light-emitting structure; a passivation layer formed to cover the side and bottom surfaces of the light-emitting structure and expose a predetermined portion of the p-electrode, the passivation layer being formed of a distributed Bragg reflector (DBR); a plating seed layer formed under the passivation layer and the p-electrode; and a support layer formed under the plating seed layer.

Abstract translation: 垂直GaN基LED包括：n电极; 在n电极下依次形成n型GaN层，有源层和p型GaN层的发光结构; 形成在发光结构下的p电极; 钝化层，其形成为覆盖所述发光结构的侧表面和底表面并暴露所述p电极的预定部分，所述钝化层由分布式布拉格反射器（DBR）形成; 形成在钝化层下面的电镀种子层和p电极; 以及形成在电镀种子层下的支撑层。

公开(公告)号：US20140367720A1

公开(公告)日：2014-12-18

申请号：US14300642

申请日：2014-06-10

Applicant: Ki Seok KIM ,  Sang Seok LEE ,  Su Yeol LEE ,  Chan Mook LIM

Inventor： Ki Seok KIM ,  Sang Seok LEE ,  Su Yeol LEE ,  Chan Mook LIM

IPC: H01L33/42 ,  H01L33/40

CPC classification number: H01L33/42 ,  H01L33/38 ,  H01L33/405 ,  H01L33/46

Abstract: A semiconductor light emitting device and method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The device may also includes a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer and having a pad region and a finger region extended from the pad region in one direction. The second electrode may include a transparent electrode part positioned on the second conductivity type semiconductor layer and including at least one opening therein, at least one reflective part spaced apart from the transparent electrode part within the opening and disposed in the pad region and the finger region, and a bonding part positioned on at least one portion of the reflective part and including a plurality of bonding finger parts spaced apart from each other in the finger region and a bonding pad part disposed in the pad region.

Abstract translation: 提供半导体发光器件和制造半导体发光器件的方法。 半导体发光器件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 该器件还可以包括连接到第一导电类型半导体层的第一电极和连接到第二导电类型半导体层的第二电极，并且具有在一个方向上从焊盘区域延伸的焊盘区域和手指区域。 第二电极可以包括位于第二导电类型半导体层上并且包括其中的至少一个开口的透明电极部分，至少一个反射部分与开口内的透明电极部分间隔开并且设置在焊盘区域中，并且指状区域 以及位于所述反射部分的至少一部分上并且包括在所述手指区域中彼此间隔开的多个接合指状部分的接合部分和设置在所述焊盘区域中的接合焊盘部分。