公开(公告)号：US20060191478A1

公开(公告)日：2006-08-31

申请号：US11414049

申请日：2006-04-27

Applicant: Sudhir Gondhalekar ,  Tom Cho ,  Rolf Guenther ,  Shigeru Takehiro ,  Masayoshi Nohira ,  Tetsuya Ishikawa ,  Ndanka Mukuti

Inventor： Sudhir Gondhalekar ,  Tom Cho ,  Rolf Guenther ,  Shigeru Takehiro ,  Masayoshi Nohira ,  Tetsuya Ishikawa ,  Ndanka Mukuti

IPC: C23C16/00

CPC classification number: H01J37/32522 ,  C23C16/4401 ,  C23C16/507 ,  H01J37/321

Abstract: The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a dome top and having a side portion defining a chamber diameter. A top RF coil is disposed above the dome top. A side RF coil is disposed adjacent the side portion of the dome. The side RF coil is spaced from the top RF coil by a coil separation. A ratio of the coil separation to the chamber diameter is typically at least about 0.15, more desirably about 0.2-0.25.

Abstract translation: 本发明涉及等离子体化学气相沉积室的设计，其提供了在基底上形成薄的CVD膜的更均匀的条件。 在一个实施例中，用于处理半导体衬底的设备包括限定其中的等离子体处理区域的室。 该室包括底部，侧壁和设置在侧壁顶部的圆顶。 圆顶具有圆顶，并具有限定腔直径的侧部。 顶部RF线圈设置在圆顶顶部上方。 侧面RF线圈邻近圆顶的侧部设置。 侧RF线圈通过线圈分离与顶部RF线圈间隔开。 线圈分离与室直径的比率通常为至少约0.15，更期望为约0.2-0.25。

公开(公告)号：US07074298B2

公开(公告)日：2006-07-11

申请号：US10150581

申请日：2002-05-17

Applicant: Sudhir Gondhalekar ,  Tom K. Cho ,  Rolf Guenther ,  Shigeru Takehiro ,  Masayoshi Nohira ,  Tetsuya Ishikawa ,  Ndanka O. Mukuti

Inventor： Sudhir Gondhalekar ,  Tom K. Cho ,  Rolf Guenther ,  Shigeru Takehiro ,  Masayoshi Nohira ,  Tetsuya Ishikawa ,  Ndanka O. Mukuti

IPC: H01L21/306 ,  C23C16/00

CPC classification number: H01J37/32522 ,  C23C16/4401 ,  C23C16/507 ,  H01J37/321

Abstract: The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a dome top and having a side portion defining a chamber diameter. A top RF coil is disposed above the dome top. A side RF coil is disposed adjacent the side portion of the dome. The side RF coil is spaced from the top RF coil by a coil separation. A ratio of the coil separation to the chamber diameter is at least about 0.15, more desirably about 0.2–0.25.

Abstract translation: 本发明涉及等离子体化学气相沉积室的设计，其提供了在基底上形成薄的CVD膜的更均匀的条件。 在一个实施例中，用于处理半导体衬底的设备包括限定其中的等离子体处理区域的室。 该室包括底部，侧壁和设置在侧壁顶部的圆顶。 圆顶具有圆顶，并具有限定腔直径的侧部。 顶部RF线圈设置在圆顶顶部上方。 侧面RF线圈邻近圆顶的侧部设置。 侧RF线圈通过线圈分离与顶部RF线圈间隔开。 线圈分离与室直径的比率至少为约0.15，更优选为约0.2-0.25。

公开(公告)号：US08409355B2

公开(公告)日：2013-04-02

申请号：US12109187

申请日：2008-04-24

Applicant: Muhammad M. Rasheed ,  Teruki Iwashita ,  Hiroshi Otake ,  Yuki Koga ,  Kazutoshi Maehara ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Dmitry Lubomirsky

Inventor： Muhammad M. Rasheed ,  Teruki Iwashita ,  Hiroshi Otake ,  Yuki Koga ,  Kazutoshi Maehara ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Dmitry Lubomirsky

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: C23C16/4585 ,  C23C16/4581 ,  H01J37/32082 ,  H01J37/32642 ,  H01L21/68735

Abstract: Embodiments of process kits for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, a process kit for a semiconductor process chamber may include an annular body being substantially horizontal and having an inner and an outer edge, and an upper and a lower surface; an inner lip disposed proximate the inner edge and extending vertically from the upper surface; and an outer lip disposed proximate the outer edge and on the lower surface, and having a shape conforming to a surface of the substrate support pedestal. In some embodiments, a process kit for a semiconductor process chamber my include an annular body having an inner and an outer edge, and having an upper and lower surface, the upper surface disposed at a downward angle of between about 5-65 degrees in an radially outward direction from the inner edge toward the outer edge.

Abstract translation: 本文提供了半导体衬底处理室的衬底支撑件的工艺组件的实施例。 在一些实施例中，用于半导体处理室的处理套件可以包括基本上水平的并具有内部和外部边缘以及上部和下部表面的环形体; 靠近所述内边缘并从所述上表面垂直延伸的内唇缘; 以及设置在所述外边缘和所述下表面附近并且具有与所述基板支撑基座的表面相符的形状的外唇缘。 在一些实施例中，用于半导体处理腔室的处理套件包括具有内边缘和外边缘的环形体，并具有上表面和下表面，上表面以约5-65度的向下角度设置在 从内缘朝向外缘的径向向外方向。

公开(公告)号：US20090034148A1

公开(公告)日：2009-02-05

申请号：US11888327

申请日：2007-07-31

Applicant: Dmitry Lubomirsky ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Kadthala Ramaya Narendrnath ,  Muhammad Rasheed ,  Tony Kaushal

Inventor： Dmitry Lubomirsky ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Kadthala Ramaya Narendrnath ,  Muhammad Rasheed ,  Tony Kaushal

IPC: H02N13/00

CPC classification number: H02N13/00 ,  H01L21/6833 ,  Y10T29/49117 ,  Y10T29/49885

Abstract: A method of making an electrostatic chuck comprising positioning a plate into a channel in a body to form a plenum and inserting a dielectric component into an opening in the plate, where the dielectric component defines a portion of a passage from the plenum. Thereafter, depositing a dielectric layer covering at least a portion of the body and at least a portion of the plate to form a support surface. The dielectric layer is polished to a specified thickness. In one embodiment, the polishing process forms an opening through the dielectric layer to enable the dielectric component to define a passage between the support surface and the plenum. In another embodiment, at least a portion of the dielectric layer is porous proximate the dielectric component such that the porous dielectric layer and the dielectric component form a passage between the support surface and the plenum. In a further embodiment, a hole is formed through the dielectric layer and the hole in the dielectric layer and the dielectric component form a passage between the support surface and the plenum.

Abstract translation: 一种制造静电卡盘的方法，包括将板定位在主体中的通道中以形成气室，并将电介质部件插入板中的开口中，其中介电部件限定了来自气室的通道的一部分。 此后，沉积覆盖主体的至少一部分和板的至少一部分以形成支撑表面的电介质层。 将电介质层抛光至规定的厚度。 在一个实施例中，抛光工艺形成通过介电层的开口，以使得介质部件能够在支撑表面和集气室之间限定通道。 在另一个实施例中，电介质层的至少一部分在绝缘元件附近是多孔的，使得多孔介电层和电介质元件在支撑表面和增压室之间形成通道。 在另一实施例中，穿过电介质层形成孔，并且电介质层中的孔和电介质元件在支撑表面和气室之间形成通道。

公开(公告)号：US20090034147A1

公开(公告)日：2009-02-05

申请号：US11888311

申请日：2007-07-31

Applicant: Kadthala Ramaya Narendrnath ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Dmitry Lubomirsky ,  Muhammad Rasheed ,  Tony Kaushal

Inventor： Kadthala Ramaya Narendrnath ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Dmitry Lubomirsky ,  Muhammad Rasheed ,  Tony Kaushal

IPC: H01L21/683 ,  H01L21/67

CPC classification number: H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

Abstract: A method and apparatus for providing a fluid distribution element for an electrostatic chuck that reduces plasma formation and arcing within heat transfer fluid passages. One embodiment comprises a plate and a dielectric component, where the dielectric component is inserted into the plate. The plate is adapted to be positioned within a channel to define a plenum, wherein the dielectric component provides at least a portion of a fluid passage coupled to the plenum. A porous dielectric layer, formed upon the dielectric component, provides at least another portion of a fluid passage coupled to the plenum. In other embodiments, the fluid distribution element comprises various arrangements of components to define a fluid passage that does not provide a line-of-sight path from the support surface for a substrate to a plenum.

Abstract translation: 一种用于提供用于静电卡盘的流体分配元件的方法和装置，其减少了传热流体通道内的等离子体形成和电弧。 一个实施例包括板和电介质部件，其中介电部件插入板中。 板适于被定位在通道内以限定通风室，其中介电部件提供耦合到集气室的流体通道的至少一部分。 形成在电介质部件上的多孔介电层提供至少另一部分与气室相连的流体通道。 在其他实施例中，流体分配元件包括各种组件的布置，以限定流体通道，该流体通道不提供从用于基底的支撑表面到气室的视线路径。

公开(公告)号：US20060158240A1

公开(公告)日：2006-07-20

申请号：US11316329

申请日：2005-12-21

Applicant: Sudhir Gondhalekar ,  Tetsuya Ishikawa

Inventor： Sudhir Gondhalekar ,  Tetsuya Ishikawa

IPC: G06G7/24

CPC classification number: H01L21/67225 ,  G03B27/32 ,  G03D13/006 ,  G03F7/40 ,  G05B19/41825 ,  G05B2219/40476 ,  G05B2219/45031 ,  G05B2219/49137 ,  H01L21/67109 ,  H01L21/6715 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/67754 ,  H01L21/6831 ,  H01L21/6838 ,  H01L21/68707 ,  H01L22/26 ,  Y02P90/087 ,  Y10S414/135 ,  Y10S414/136 ,  Y10T29/53187 ,  Y10T29/5323

Abstract: A point of dispense temperature control apparatus for a track lithography system. The apparatus includes a first liquid source characterized by a first temperature and a first flow controller coupled to the first liquid source. The apparatus also includes a second liquid source characterized by a second temperature and a second flow controller coupled to the second liquid source. The apparatus further includes a mixing element coupled to the first flow controller and the second flow controller. The mixing element is adapted to provide a mixed stream characterized by a total flow volume and a temperature intermediate to the first temperature and the second temperature. The apparatus additionally includes a sensor coupled to the mixed stream, a point of dispense heat exchanger coupled to the mixed stream, and a control loop coupled to the sensor and at least one of the first flow controller or the second flow controller. The control loop is adapted to provide a consistent total flow volume at the intermediate temperature.

Abstract translation: 用于轨道光刻系统的点火温度控制装置。 该装置包括第一液体源，其特征在于第一温度和耦合到第一液体源的第一流量控制器。 该装置还包括第二液体源，其特征在于第二温度和耦合到第二液体源的第二流量控制器。 该装置还包括耦合到第一流量控制器和第二流量控制器的混合元件。 混合元件适于提供一种混合流，其特征在于总流量和中间到第一温度和第二温度的温度。 该装置还包括耦合到混合流的传感器，耦合到混合流的分配热交换器的点，以及耦合到传感器和第一流量控制器或第二流量控制器中的至少一个的控制回路。 控制回路适于在中间温度下提供一致的总流量。

公开(公告)号：US07354501B2

公开(公告)日：2008-04-08

申请号：US10150458

申请日：2002-05-17

Applicant: Sudhir Gondhalekar ,  Tom K. Cho ,  Rolf Guenther ,  Steve H. Kim ,  Mehrdad Moshfegh ,  Shigeru Takehiro ,  Thomas Kring ,  Tetsuya Ishikawa

Inventor： Sudhir Gondhalekar ,  Tom K. Cho ,  Rolf Guenther ,  Steve H. Kim ,  Mehrdad Moshfegh ,  Shigeru Takehiro ,  Thomas Kring ,  Tetsuya Ishikawa

IPC: C23C16/00 ,  H01L21/306

CPC classification number: H01J37/32522 ,  C23C16/507 ,  H01J37/321

Abstract: The present invention is directed to an upper chamber design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. Embodiments of the invention improve temperature control of the upper chamber and improve particle performance by reducing or minimizing the temperature fluctuations on the dome between the deposition and non-deposition cycles. In accordance with an aspect of the present invention, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a substantially flat dome top. A top RF coil is disposed above the dome top, and has an outer loop which is larger in size than the substrates to be processed in the chamber. A cold plate is disposed above the top RF coil, and is larger in size than the substrates to be processed in the chamber.

Abstract translation: 本发明涉及一种等离子体CVD室的上室设计，其提供在衬底上形成薄CVD膜的更均匀的条件。 本发明的实施例通过减少或最小化沉积和非沉积循环之间的圆顶上的温度波动来改善上室的温度控制并提高颗粒性能。 根据本发明的一个方面，用于处理半导体衬底的设备包括限定其中的等离子体处理区域的室。 该室包括底部，侧壁和设置在侧壁顶部的圆顶。 圆顶具有基本平坦的圆顶。 顶部RF线圈设置在圆顶顶部上方，并且具有比在腔室中要处理的基板尺寸更大的外环。 冷板设置在顶部RF线圈上方，并且尺寸大于在腔室中要处理的基板。

公开(公告)号：US20070048446A1

公开(公告)日：2007-03-01

申请号：US11552129

申请日：2006-10-23

Applicant: Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh Pham ,  Zhong Hua

Inventor： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh Pham ,  Zhong Hua

IPC: C23C16/00 ,  B05D3/00

CPC classification number: H01L21/67017 ,  H01L21/67109

Abstract: The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

Abstract translation: 本发明旨在改善半导体处理系统中的缺陷性能。 在具体实施例中，用于处理半导体衬底的设备包括限定其中的处理区域的腔室和设置在腔室中以支撑半导体衬底的衬底支撑件。 至少一个喷嘴延伸到室中以通过喷嘴开口将工艺气体引入室中。 该装置包括至少一个隔热罩，每个隔热罩设置在至少一个喷嘴之一的至少一部分周围。 隔热罩具有向喷嘴的喷嘴开口向远侧突出的延伸部分，其包括用于工艺气体从喷嘴开口流过的隔热开口。 隔热罩降低了处理室中的喷嘴的温度，用于将工艺气体引入其中以减少颗粒。