公开(公告)号：US09704733B2

公开(公告)日：2017-07-11

申请号：US14434864

申请日：2013-11-15

Applicant: TOYO TANSO CO., LTD.

Inventor： Satoshi Torimi ,  Norihito Yabuki ,  Satoru Nogami

IPC: H01L21/02 ,  H01L21/673 ,  C30B29/36 ,  C30B33/12 ,  H01L21/3065 ,  H01L29/16 ,  H01L21/67 ,  C30B35/00 ,  H01L21/04 ,  H01L21/306 ,  H01L21/302 ,  C23C10/22 ,  F27B17/00 ,  C23C10/02

CPC classification number: H01L21/673 ,  C23C10/02 ,  C23C10/22 ,  C30B29/36 ,  C30B33/12 ,  C30B35/002 ,  F27B17/0025 ,  H01L21/046 ,  H01L21/302 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/6719 ,  H01L29/1608

Abstract: The present invention is to provide a storing container wherein Si does not drop onto a single crystal SiC substrate, and Si pressure distribution in an internal space can be made uniform. This storing container stores therein a single crystal SiC substrate to be etched by means of a heat treatment under Si vapor pressure. The storing container is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The tantalum silicide layer supplies Si to the internal space. Furthermore, the tantalum silicide layer is different from adhered Si, and does not melt and drop.

公开(公告)号：US20170110378A1

公开(公告)日：2017-04-20

申请号：US15300653

申请日：2015-10-03

Applicant: Toyo Tanso Co., Ltd.

Inventor： Satoshi Torimi ,  Norihito Yabuki ,  Satoru Nogami

IPC: H01L21/66 ,  H01L21/02

CPC classification number: H01L22/12 ,  H01L21/0201 ,  H01L21/02019 ,  H01L21/02024 ,  H01L21/0475 ,  H01L21/3065 ,  H01L29/1608

Abstract: This method for estimating the depth of latent scratches in SiC substrates includes an etching step, a measurement step, and an estimation step. In the etching step, a SiC substrate in which at least the surface is formed from single crystal SiC, and which has been subjected to machining, is subjected to heat treatment under Si atmosphere to etch the surface of the SiC substrate. In the measurement step, the surface roughness or the residual stress of the SiC substrate which has been subjected to the etching step is measured. In the estimation step, the depth of latent scratches or the presence or absence of latent scratches in the SiC substrate before the etching step are estimated on the basis of the results obtained in the measurement step.

公开(公告)号：US20130335883A1

公开(公告)日：2013-12-19

申请号：US13852494

申请日：2013-03-28

Applicant: TOYO TANSO CO., LTD.

Inventor： Yasushi SONEDA ,  Masaya KODAMA ,  Takahiro MORISHITA

IPC: H01G11/38 ,  H01G11/32

CPC classification number: H01G11/38 ,  C01B32/00 ,  C01P2006/16 ,  H01G11/24 ,  H01G11/34 ,  Y02E60/13

Abstract: A porous carbon material, in which a total pore volume is 1 mL/g or more, and in which a ratio of a mesopore volume to the total pore volume is 50% or more; a method of producing the same; and an electric double-layer capacitor containing the same.

Abstract translation: 总孔体积为1mL / g以上，多孔碳材料，其中中孔体积与总孔体积的比率为50％以上; 其制造方法; 和含有该双电层电容器的双电层电容器。

公开(公告)号：US20130309501A1

公开(公告)日：2013-11-21

申请号：US13675430

申请日：2012-11-13

Applicant: TOYO TANSO CO., LTD.

Inventor： Tomoyuki OHKUNI ,  Weiwu CHEN ,  Yoshinari MIYAMOTO

IPC: C04B35/64 ,  B05D3/02

CPC classification number: C04B35/64 ,  B05D3/0254 ,  B32B18/00 ,  C04B35/575 ,  C04B35/581 ,  C04B35/6263 ,  C04B2235/3203 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3244 ,  C04B2235/3409 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/3865 ,  C04B2235/5409 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/666 ,  C04B2235/77 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/363 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/385 ,  C04B2237/60 ,  Y10T428/30

Abstract: Provided is a method for producing a novel carbon member-inorganic member joined body. A carbon member-inorganic member joined body including a carbon member and an inorganic member joined together is produced. The carbon member-inorganic member joined body is obtained by forming on the carbon member a layer containing an inorganic material and a sintering aid, and heating the layer.

Abstract translation: 提供一种制造新颖的碳构件 - 无机构件接合体的方法。 制造包括碳构件和连接在一起的无机构件的碳构件 - 无机构件接合体。 碳构件 - 无机构件接合体通过在碳构件上形成含有无机材料和烧结助剂的层并加热层而获得。

公开(公告)号：US20220127147A1

公开(公告)日：2022-04-28

申请号：US17551365

申请日：2021-12-15

Applicant: TOYO TANSO CO., LTD.

Inventor： Mizuho ANZAI ,  Takahiro MORISHITA ,  Yoshio SHODAI

IPC: C01B32/318 ,  C01B32/354 ,  B01J20/20 ,  B01J35/10 ,  H01M4/583

Abstract: A method of producing a porous carbon is provided that can change type of functional groups, amount of functional groups, or ratio of functional groups while inhibiting its pore structure from changing. A method of producing a porous carbon includes: a first step of carbonizing a material containing a carbon source and a template source, to prepare a carbonized product; and a second step of immersing the carbonized product into a template removing solution, to remove a template from the carbonized product, and the method is characterized by changing at least two or more of the following conditions: type of the material, ratio of the carbon source and the template source, size of the template, and type of the template removal solution, to thereby control type, amount, or ratio of functional groups that are present in the porous carbon.

公开(公告)号：US10665465B2

公开(公告)日：2020-05-26

申请号：US15527526

申请日：2015-11-17

Applicant: KWANSEI GAKUIN EDUCATIONAL FOUNDATION ,  TOYO TANSO CO., LTD.

Inventor： Tadaaki Kaneko ,  Koji Ashida ,  Yasunori Kutsuma ,  Satoshi Torimi ,  Masato Shinohara ,  Youji Teramoto ,  Norihito Yabuki ,  Satoru Nogami

IPC: H01L21/306 ,  C30B29/36 ,  C30B33/12 ,  H01L21/302 ,  H01L21/04 ,  H01L21/304

Abstract: Provided is a surface treatment method for a SiC substrate (40), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate (40) is etched by heating the SiC substrate (40) under Si vapor pressure, an etching mode and an etching depth which are determined at least on the basis of an etching rate, are controlled to etch the SiC substrate (40), so that a surface pattern of the SiC substrate (40) after etching treatment is controlled.

公开(公告)号：US09902839B2

公开(公告)日：2018-02-27

申请号：US14781337

申请日：2014-03-25

Applicant: TOYO TANSO CO., LTD.

Inventor： Yasuhisa Ogita ,  Motoaki Akiyama

IPC: C04B35/52 ,  B60C1/00 ,  C08K3/04 ,  C08K7/24 ,  F16C33/16 ,  C04B35/532 ,  C04B41/00 ,  C04B41/83 ,  C04B41/48 ,  C04B41/51 ,  C10M103/02 ,  C04B41/88 ,  F16C17/02 ,  F16C17/04 ,  C04B111/00

CPC classification number: C08K7/24 ,  C04B35/532 ,  C04B41/009 ,  C04B41/48 ,  C04B41/51 ,  C04B41/83 ,  C04B41/88 ,  C04B2111/00353 ,  C04B2235/616 ,  C10M103/02 ,  F16C17/02 ,  F16C17/04 ,  F16C33/16 ,  C04B35/52 ,  C04B38/00 ,  C04B41/4523

Abstract: A carbon material for bearings includes a porous carbon base material and an impregnation material. The impregnation material is made of resin or metal, and with which the carbon base material is impregnated. The carbon material for bearings includes a plurality of pores. When a pore distribution in the carbon material for bearings is measured by a mercury penetration method using a mercury porosity meter, a cumulative pore volume of pores having a diameter larger than 0.1 μm is not more than 8 mm3/g.

公开(公告)号：US20180019461A1

公开(公告)日：2018-01-18

申请号：US15527115

申请日：2015-12-04

Applicant: NATIONAL INSTITUTE OF TECHNOLOGY ,  TOYO TANSO CO., LTD.

Inventor： Hiroshi Okano ,  Tomofumi Kurosaki ,  Takurou Tsuruoka ,  Toshihiro Hosokawa ,  Nobuya Misaki ,  Tetsuya Yuki

IPC: H01M4/133 ,  H01M4/1393 ,  H01M4/88 ,  H01M4/86 ,  H01M4/02

CPC classification number: H01M4/133 ,  H01M4/1393 ,  H01M4/86 ,  H01M4/8647 ,  H01M4/88 ,  H01M4/8875 ,  H01M4/90 ,  H01M4/96 ,  H01M12/06 ,  H01M12/08 ,  H01M2004/028 ,  H01M2004/8689 ,  Y02E60/128

Abstract: A positive electrode for an air battery that can remarkably improve the battery performance is provided by uniformly dispersing fine Nb (Nb oxide) therein. An air battery using the positive electrode as well as a method of manufacturing the positive electrode is also provided.A positive electrode for an air battery includes an expanded graphite sheet containing expanded graphite and Nb dispersed within the sheet. It is desirable that the Nb be contained in a weight proportion of from 5 ppm to 50000 ppm with respect to the expanded graphite.

公开(公告)号：US20170323797A1

公开(公告)日：2017-11-09

申请号：US15527622

申请日：2015-11-17

Applicant: Toyo Tanso Co., Ltd. ,  KWANSEI GAKUIN EDUCATIONAL FOUNDATION

Inventor： Satoshi Torimi ,  Masato Shinohara ,  Youji Teramoto ,  Norihito Yabuki ,  Satoru Nogami ,  Tadaaki Kaneko ,  Koji Ashida ,  Yasunori Kutsuma

IPC: H01L21/306 ,  H01L21/67

CPC classification number: H01L21/30604 ,  C30B29/36 ,  C30B33/12 ,  C30B35/002 ,  H01L21/302 ,  H01L21/67063

Abstract: Provided is a method for controlling the rate of etching of a SiC substrate based on a composition of a storing container. The etching method of the present invention is for etching the SiC substrate by heating the SiC substrate under Si vapor pressure, in a state where the SiC substrate is stored in a crucible. The crucible is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The rate of etching of the SiC substrate is controlled based on difference in a composition of the tantalum silicide layer.

公开(公告)号：US20170323792A1

公开(公告)日：2017-11-09

申请号：US15527602

申请日：2015-11-17

Applicant: Toyo Tanso Co., Ltd.

Inventor： Norihito Yabuki ,  Satoshi Torimi ,  Satoru Nogami

IPC: H01L21/04 ,  H01L21/306

CPC classification number: H01L21/046 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3247 ,  H01L21/67115 ,  H01L21/67346 ,  H01L21/7602 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7813

Abstract: Provided is a SiC substrate treatment method for, with respect to a SiC substrate (40) that has, on its surface, grooves (41), activating ions while preventing roughening of the surface of the substrate. In the method, an ion activation treatment in which the SiC substrate (40) is heated under Si vapor pressure is performed to the SiC substrate (40) has, on its surface, an ion implantation region (46) in which ions have been implanted, and has the grooves (41) provided in a region including at least the ion implantation region (46), thereby ions that are implanted in the SiC substrate (40) is activated while etching the surface of the substrate.