公开(公告)号：US20090050869A1

公开(公告)日：2009-02-26

申请号：US12073499

申请日：2008-03-06

Applicant: Cheol-kyu Kim ,  Yoon-ho Khang ,  Tae-yon Lee

Inventor： Cheol-kyu Kim ,  Yoon-ho Khang ,  Tae-yon Lee

IPC: H01L45/00

CPC classification number: H01L27/2436 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1616 ,  H01L45/1625

Abstract: Provided is a phase-change random access memory (PRAM). The PRAM includes a bottom electrode, a bottom electrode contact layer, which is formed on one area of the bottom electrode, and an insulating layer, which is formed on a side of the bottom electrode contact layer, a phase-change layer, which is formed on the bottom electrode contact layer and the insulating layer and is formed of a phase-change material having a crystallization temperature between 100° C. and 150° C., and a top electrode, which is formed on the phase-change layer.

Abstract translation: 提供了相变随机存取存储器（PRAM）。 PRAM包括底电极，底电极接触层，其形成在底电极的一个区域上，绝缘层形成在底电极接触层的一侧，相变层 形成在底部电极接触层和绝缘层上，并且由结晶温度在100℃至150℃之间的相变材料和形成在相变层上的顶部电极形成。

公开(公告)号：US20160028977A1

公开(公告)日：2016-01-28

申请号：US14877539

申请日：2015-10-07

Applicant: Young Gu JIN ,  Min Ho Kim ,  Tae Chan Kim ,  Dong Ki Min ,  Sang Chul Sul ,  Tae Seok Oh ,  Kwang Hyun Lee ,  Tae Yon Lee ,  Ju Hwan Jung

Inventor： Young Gu JIN ,  Min Ho Kim ,  Tae Chan Kim ,  Dong Ki Min ,  Sang Chul Sul ,  Tae Seok Oh ,  Kwang Hyun Lee ,  Tae Yon Lee ,  Ju Hwan Jung

IPC: H04N5/363 ,  H04N5/378 ,  H04N5/374 ,  H01L27/146

CPC classification number: H04N5/363 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14643 ,  H04N5/374 ,  H04N5/3742 ,  H04N5/3745 ,  H04N5/378

Abstract: ACMOS image sensor includes a pixel array having a plurality of pixels. Each of the plurality of pixels includes: a photogate structure configured to be controlled based on a first gate voltage; and a sensing transistor including a charge pocket region formed in a substrate region, the sensing transistor being configured to be controlled based on a second gate voltage. Based on the first gate voltage, the photogate structure is configured to integrate charges generated in response to light incident on the substrate region. The sensing transistor is configured to adjust at least one of a threshold voltage of the sensing transistor and a current flow in the sensing transistor according to charges transferred from the photogate structure to the charge pocket region based on a difference between the first gate voltage and the second gate voltage.

Abstract translation: ACMOS图像传感器包括具有多个像素的像素阵列。 所述多个像素中的每一个包括：被配置为基于第一栅极电压来控制的光栅结构; 以及感测晶体管，其包括形成在衬底区域中的电荷袋区域，所述感测晶体管被配置为基于第二栅极电压来控制。 基于第一栅极电压，光栅结构被配置为集成响应于入射在衬底区域上的光而产生的电荷。 感测晶体管被配置为根据第一栅极电压和第二栅极电压之间的差异，根据从光栅结构传输到电荷袋区域的电荷来调节感测晶体管的阈值电压和感测晶体管中的电流的至少一个 第二栅极电压。

公开(公告)号：US09225922B2

公开(公告)日：2015-12-29

申请号：US13550838

申请日：2012-07-17

Applicant: Tae-Yon Lee ,  Yoon-Dong Park ,  Yong-Jei Lee ,  Seoung-Hyun Kim ,  Joo-Yeong Gong ,  Sung-Kwon Hong

Inventor： Tae-Yon Lee ,  Yoon-Dong Park ,  Yong-Jei Lee ,  Seoung-Hyun Kim ,  Joo-Yeong Gong ,  Sung-Kwon Hong

IPC: H04N5/357 ,  H04N5/378 ,  H04N5/369 ,  H04N5/3745

CPC classification number: H04N5/357 ,  H04N5/3696 ,  H04N5/3745 ,  H04N5/378

Abstract: In a method of operating an image sensor, a noise voltage of a floating diffusion region is sampled after a reset voltage is applied to the floating diffusion region. A storage region, in which a photo-charge is stored, is electrically connected to the floating diffusion region after sampling the noise voltage, and a demodulation voltage of the floating diffusion region is sampled after the storage region and the floating diffusion region are electrically-connected. A voltage is determined based on the noise voltage and the demodulation voltage.

Abstract translation: 在操作图像传感器的方法中，在对浮动扩散区域施加复位电压之后，对浮动扩散区域的噪声电压进行采样。 在对噪声电压进行采样之后，存储光电荷的存储区域与浮动扩散区域电连接，并且在存储区域和浮动扩散区域电气化之后对浮动扩散区域的解调电压进行采样， 连接的。 基于噪声电压和解调电压确定电压。

公开(公告)号：US09046358B2

公开(公告)日：2015-06-02

申请号：US12942581

申请日：2010-11-09

Applicant: Tae Yon Lee ,  Young Gu Jin ,  Dong Ki Min ,  Dong Seok Suh ,  Jae Pil Kim

Inventor： Tae Yon Lee ,  Young Gu Jin ,  Dong Ki Min ,  Dong Seok Suh ,  Jae Pil Kim

IPC: G01C3/08 ,  H01J40/14

CPC classification number: G01C3/08 ,  H01J40/14

Abstract: A method includes providing packets to demodulate a modulated photon signal output from a light source, wherein each packet includes a first interval and a second interval, and providing oscillation signals respectively having different phases from one another to photogates during the first interval of each of the packets. The light source is disabled and a direct current (DC) voltage is provided to the photogates during the second interval of each of the packets.

Abstract translation: 一种方法包括提供分组以解调从光源输出的调制的光子信号，其中每个分组包括第一间隔和第二间隔，并且在每个分组的第一间隔期间提供分别具有彼此不同相位的相位的振荡信号 数据包 光源被禁用，并且在每个分组的第二间隔期间向照相门提供直流（DC）电压。

公开(公告)号：US08149608B2

公开(公告)日：2012-04-03

申请号：US12459155

申请日：2009-06-26

Applicant: Tae-Yon Lee

Inventor： Tae-Yon Lee

IPC: G11C11/00

CPC classification number: H01L45/00 ,  G11C11/56 ,  G11C11/5678 ,  G11C13/0004

Abstract: A multi-level phase change random access memory device includes a first electrode, a second electrode, and a phase change material disposed between the first electrode and the second electrode. The multi-level phase change random access memory device also includes a variable bias source coupled to the first electrode. The variable bias source provides a respective bias applied at the first electrode to form a portion of the phase change material to have one of an amorphous state and different crystal states for storing multi-bits data.

Abstract translation: 多级相变随机存取存储器件包括第一电极，第二电极和设置在第一电极和第二电极之间的相变材料。 多电平相变随机存取存储器件还包括耦合到第一电极的可变偏置源。 可变偏置源提供施加在第一电极处的相应偏置，以形成相变材料的一部分以具有用于存储多位数据的非晶状态和不同晶体状态之一。

公开(公告)号：US20110188026A1

公开(公告)日：2011-08-04

申请号：US12942581

申请日：2010-11-09

Applicant: Tae Yon LEE ,  Young Gu JIN ,  Dong Ki MIN ,  Dong Seok SUH ,  Jae Pil KIM

Inventor： Tae Yon LEE ,  Young Gu JIN ,  Dong Ki MIN ,  Dong Seok SUH ,  Jae Pil KIM

IPC: G01C3/08 ,  H01J40/14

CPC classification number: G01C3/08 ,  H01J40/14

Abstract: A method includes providing packets to demodulate a modulated photon signal output from a light source, wherein each packet includes a first interval and a second interval, and providing oscillation signals respectively having different phases from one another to photogates during the first interval of each of the packets. The light source is disabled and a direct current (DC) voltage is provided to the photogates during the second interval of each of the packets.

Abstract translation: 一种方法包括提供分组以解调从光源输出的调制的光子信号，其中每个分组包括第一间隔和第二间隔，并且在每个分组的第一间隔期间提供分别具有彼此不同相位的相位的振荡信号 数据包 光源被禁用，并且在每个分组的第二间隔期间向照相门提供直流（DC）电压。

公开(公告)号：US07807989B2

公开(公告)日：2010-10-05

申请号：US12213234

申请日：2008-06-17

Applicant: Tae-yon Lee ,  Ki-joon Kim ,  Jun-ho Lee ,  Cheol-kyu Kim

Inventor： Tae-yon Lee ,  Ki-joon Kim ,  Jun-ho Lee ,  Cheol-kyu Kim

IPC: H01L29/02 ,  H01L21/336

CPC classification number: H01L45/1233 ,  H01L45/06 ,  H01L45/148

Abstract: Provided is a phase-change memory using a single-element semimetallic thin film. The device includes a storage node having a phase-change material layer and a switching element connected to the storage node, wherein the storage node includes a single-element semimetallic thin film which is formed between an upper electrode and a lower electrode. Thus, the write speed of the phase-change memory can be increased compared with the case of a Ge—Sb—Te (GST) based material.

Abstract translation: 提供了使用单元件半金属薄膜的相变存储器。 该装置包括具有相变材料层和连接到存储节点的开关元件的存储节点，其中存储节点包括形成在上电极和下电极之间的单元件半金属薄膜。 因此，与基于Ge-Sb-Te（GST）的材料的情况相比，可以提高相变存储器的写入速度。

公开(公告)号：US20090173927A1

公开(公告)日：2009-07-09

申请号：US12232961

申请日：2008-09-26

Applicant: Cheol-kyu Kim ,  Min-ho Kwon ,  Yoon-ho Khang ,  Youn-seon Kang ,  Tae-yon Lee ,  Sung Heo ,  Ki-bum Kim ,  Sung-wook Nam ,  Dong-bok Lee

Inventor： Cheol-kyu Kim ,  Min-ho Kwon ,  Yoon-ho Khang ,  Youn-seon Kang ,  Tae-yon Lee ,  Sung Heo ,  Ki-bum Kim ,  Sung-wook Nam ,  Dong-bok Lee

IPC: H01L29/02 ,  H01L21/44

CPC classification number: H01L45/126 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/16

Abstract: Provided are a storage node, phase change memory device and methods of manufacturing and operating the same. The storage node may include an electrode, a phase change layer, and an anti-diffusion layer between the electrode and the phase change layer and including a silicide compound. The phase change memory device may include the storage node and a switching device connected to the storage node.

Abstract translation: 提供了一种存储节点，相变存储器件及其制造和操作方法。 存储节点可以包括在电极和相变层之间的电极，相变层和抗扩散层，并且包括硅化物化合物。 相变存储器件可以包括存储节点和连接到存储节点的交换设备。

公开(公告)号：US20070120104A1

公开(公告)日：2007-05-31

申请号：US11290713

申请日：2005-11-29

Applicant: Dong Ho Ahn ,  Tae-Yon Lee ,  Ki Bum Kim ,  Byung-ki Cheong ,  Dae-Hwan Kang ,  Jeung-hyun Jeong ,  In Ho Kim ,  Taek Sung Lee ,  Won Mok Kim

Inventor： Dong Ho Ahn ,  Tae-Yon Lee ,  Ki Bum Kim ,  Byung-ki Cheong ,  Dae-Hwan Kang ,  Jeung-hyun Jeong ,  In Ho Kim ,  Taek Sung Lee ,  Won Mok Kim

IPC: H01L29/02

CPC classification number: H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

Abstract: The present invention provides a phase change memory cell comprising (GeASbBTeC)1−x(RaSbTeC)x solid solution, the solid solution being formed from a Ge—Sb—Te based alloy and a ternary metal alloy R—S—Te sharing same crystal structure as the Ge—Sb—Te based alloy. A nonvolatile phase change memory cell in accordance with the present invention provides many advantages such as high speed, high data retention, and multi-bit operation.

Abstract translation: 本发明提供了一种相变存储器单元，其包括（>> Sb> Te>>>>>（（（（（（（（（（（ R a固体溶液，固溶体由Ge-Sb-Te基合金和三元金属形成 合金RS-Te与Ge-Sb-Te基合金具有相同的晶体结构。 根据本发明的非易失性相变存储单元提供了许多优点，例如高速度，高数据保持和多位操作。

公开(公告)号：US09357142B2

公开(公告)日：2016-05-31

申请号：US14051802

申请日：2013-10-11

Applicant: Tae Chan Kim ,  Min Ho Kim ,  Dong Ki Min ,  Sang Chul Sul ,  Tae Seok Oh ,  Kwang Hyun Lee ,  Tae Yon Lee ,  Jung Hoon Jung ,  Young Gu Jin

Inventor： Tae Chan Kim ,  Min Ho Kim ,  Dong Ki Min ,  Sang Chul Sul ,  Tae Seok Oh ,  Kwang Hyun Lee ,  Tae Yon Lee ,  Jung Hoon Jung ,  Young Gu Jin

IPC: H04N5/335 ,  H04N5/378

CPC classification number: H04N5/335 ,  H04N5/378

Abstract: An image sensor includes a pixel array and a row driver block. The pixel array includes a plurality of subpixel groups, each including a plurality of subpixels. Each of the plurality of subpixels is configured to generate a subpixel signal corresponding to photocharge accumulated in response to a photon. The row driver block is configured to generate a first control signal to control the subpixels included in each of the plurality of subpixel groups to accumulate the photocharge in parallel from a first time point to a second time point.

Abstract translation: 图像传感器包括像素阵列和行驱动器块。 像素阵列包括多个子像素组，每个子像素组包括多个子像素。 多个子像素中的每一个被配置为产生对应于响应于光子累积的光电荷的子像素信号。 行驱动块被配置为生成第一控制信号，以控制包括在多个子像素组中的每个子像素组中的子像素，以从第一时间点到第二时间点并行地累积光电荷。