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    Oxime derivatives and the use thereof as latent acids
    11.
    发明授权
    Oxime derivatives and the use thereof as latent acids 有权
    肟衍生物及其作为潜伏酸的用途

    公开(公告)号：US06512020B1

    公开(公告)日：2003-01-28

    申请号：US09820115

    申请日：2001-03-28

    申请人： Toshikage Asakura ,  Hitoshi Yamato ,  Masaki Ohwa ,  Jean-Luc Birbaum ,  Kurt Dietliker ,  Junichi Tanabe

    发明人： Toshikage Asakura ,  Hitoshi Yamato ,  Masaki Ohwa ,  Jean-Luc Birbaum ,  Kurt Dietliker ,  Junichi Tanabe

    IPC分类号： C08J328

    CPC分类号： G03F7/0045 ,  B33Y70/00 ,  C07C251/62 ,  C07C309/00 ,  C07C309/65 ,  C07C317/32 ,  C07C323/47 ,  C07C381/00 ,  C07C2602/42 ,  C07D319/18 ,  C07D333/22

    摘要： Compounds of formula I, II and III, wherein wherein R1 is for example hydrogen, C1-C12alkyl, C3-C30cycloalkyl, C2-C12alkenyl, C4-C8cycloalkenyl, phenyl, which is unsubstituted or substituted, naphthyl, anthracyl or phenanthryl, unsubstituted or substituted, heteroaryl radical which is unsubstituted or substituted; wherein all radicals R1 with the exception of hydrogen can additionally be substituted by a group having a —O—C-bond or a —O—Si-bond which cleaves upon the action of an acid; R′1 is for example phenylene, naphthylene, diphenylene or oxydiphenylene, wherein these radicals are unsubstituted or substituted; R2 is halogen or C1-C10haloalkyl; R3 is for example C1-C18alkylsulfonyl, phenylsulfonyl, naphthylsulfonyl, anthracylsulfonyl or phenanthrylsulfonyl, wherein the groups are unsubstituted or substituted, or R3 is e.g. C2-C6haloalkanoyl, or halobenzoyl, R′3 is for example phenylenedisulfonyl, naphthylenedisulfonyl, diphenylenedisulfonyl, or oxydiphenylenedisulfonyl, wherein these radicals are unsubstituted or substituted, X is halogen; are especially suitable as photosensitive acid-donors in chemically amplified resist formulations.

    摘要翻译： 式I，II和III的化合物，其中R1是例如氢，C1-C12烷基，C3-C30环烷基，C2-C12链烯基，C4-C8环烯基，苯基，未取代或取代的萘基，蒽基或菲基，未取代或取代的， 未取代或取代的杂芳基; 其中除氢之外的所有基团R1可以另外被具有在酸作用下切割的-O-C键或-O-Si键的基团取代; R'1是例如亚苯基，亚萘基，亚二苯基或氧联二苯基，其中这些基团是未取代的或被取代的; R2是卤素或C1-C10卤代烷基; R3是例如C1-C18烷基磺酰基，苯基磺酰基，萘基磺酰基，蒽磺酰基或菲基磺酰基，其中基团是未取代的或被取代的，或者R3是例如。 C 2 -C 6卤代烷酰基或卤代苯甲酰基，R'3是例如亚苯基二磺酰基，萘基二磺酰基，二苯基二磺酰基或氧基二苯基二磺酰基，其中这些基团是未取代的或被取代的，X是卤素; 在化学放大抗蚀剂配方中特别适合用作光敏酸供体。

    Oxime derivatives and the use thereof as latent acids
    12.
    发明授权
    Oxime derivatives and the use thereof as latent acids 失效
    肟衍生物及其作为潜伏酸的用途

    公开(公告)号：US06485886B1

    公开(公告)日：2002-11-26

    申请号：US09830248

    申请日：2001-04-24

    申请人： Hitoshi Yamato ,  Toshikage Asakura ,  Jean-Luc Birbaum ,  Kurt Dietliker

    发明人： Hitoshi Yamato ,  Toshikage Asakura ,  Jean-Luc Birbaum ,  Kurt Dietliker

    IPC分类号： G03C173

    CPC分类号： C07C255/64 ,  B33Y70/00 ,  C07D333/36 ,  Y10S430/114 ,  Y10S430/117 ,  Y10S430/12

    摘要： New oxime derivatives of formula (I) or. (II), wherein m is 0 or 1; R1 inter alia is phenyl, naphthyl, anthracyl, phenanthryl or a heteroaryl radical; R′1 is for example C2-C12alkylene, phenylene, naphthylene; R2 is CN; R3 is C2-C6haloalkanoyl, halobenzoyl, a phosphoryl or an organosilyl group; R4, R5, R10 and R11 inter alia are hydrogen, C1-C6alkyl, C1-C6alkoxy; R6 inter alia is hydrogen phenyl, C1-C12alkyl; R7 and R8 inter alia are hydrogen, C1-C12alkyl; or R7 and R8, together with the nitrogen atom to which they are bonded, form a 5-, 6 or 7-membered ring; R9 is for example C1-C12alkyl; and A inter alia is S, O, NR7a; are useful as latent acids, especially in photoresist applications.

    摘要翻译： 式（I）的新肟衍生物或。 （II），其中m为0或1; R1特别是苯基，萘基，蒽基，菲基或杂芳基; R'1例如为C 2 -C 12亚烷基，亚苯基，亚萘基; R2为CN; R3是C2-C6卤代烷酰基，卤代苯甲酰基，磷酰基或有机甲硅烷基; R4，R5，R10和R11尤其是氢，C1-C6烷基，C1-C6烷氧基; R6尤其是氢苯基，C1-C12烷基; R 7和R 8尤其是氢，C 1 -C 12烷基; 或R 7和R 8与它们所键合的氮原子一起形成5-，6-或7-元环; R 9为例如C 1 -C 12烷基; A特别是S，O，NR7a; 可用作潜酸，特别是在光致抗蚀剂中。

    Oxime Derivatives And Use Thereof As Latent Acids
    14.
    发明申请
    Oxime Derivatives And Use Thereof As Latent Acids 有权
    肟衍生物及其用作潜伏酸

    公开(公告)号：US20080085458A1

    公开(公告)日：2008-04-10

    申请号：US11632687

    申请日：2005-07-11

    申请人： Hitoshi Yamato ,  Toshikage Asakura ,  Tobias Hintermann

    发明人： Hitoshi Yamato ,  Toshikage Asakura ,  Tobias Hintermann

    IPC分类号： C07C291/06 ,  C07D209/56 ,  G03F1/00

    CPC分类号： C07C309/67 ,  B33Y70/00 ,  C07C309/65 ,  C07C309/73 ,  C07C309/74 ,  C07C309/75 ,  C07C381/00 ,  C07C2603/18 ,  C07C2603/20 ,  C07C2603/66 ,  C07D209/86 ,  C07F9/097 ,  G03F7/0007 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/12

    摘要： The invention pertain to novel photoacid generator compounds of the formula I, II or III wherein R1 is for example C1-C18alkylsulfonyl or phenylsulfonyl, phenyl-C1-C3alkylsulfonyl, naphthylsulfonyl, anthracylsulfonyl or phenanthrylsulfonyl, all optionally substituted, or R1 is a group X1, X2 and X3 independently of each other are O or S; R′1, is e.g. phenylenedisulfonyl, naphthylenedisulfonyl, diphenylenedisulfonyl, or oxydiphenylenedisulfonyl, all optionally substituted; R2 is halogen or C1-C10haloalkyl; X is halogen; Ar1 is for example biphenylyl or fluorenyl, or is substituted naphthyl; Ar′1 is heteroarylene, optionally substituted; R8, R9, R10 and R11 for example are C1-C6alkyl which is unsubstituted or substituted by halogen; or R8, R9 and R10 are phenyl which is unsubstituted or substituted by C1-C4alkyl or halogen; or R10 and R11 together are 1,2-phenylene or C2-C6alkylene which is unsubstituted or substituted by C1-C4alkyl or halogen.

    摘要翻译： 本发明涉及式I，II或III的新型光酸产生剂化合物，其中R 1是例如C 1 -C 18烷基磺酰基或 苯基磺酰基，苯基-C 1 -C 3烷基磺酰基，萘基磺酰基，蒽基磺酰基或菲基磺酰基，全部任意取代，或R 1是基团X， X 1，X 2和X 3 3彼此独立地为O或S; R'1，例如， 亚苯基二磺酰基，亚苯基二磺酰基，二苯基二磺酰基或氧基二苯基二磺酰基，全部任选被取代; R 2是卤素或C 1 -C 10卤代烷基; X是卤素; Ar 1是例如联苯基或芴基，或者是取代的萘基; Ar'1'是亚杂芳基，任选被取代; R 8，R 9，R 10和R 11是例如C 1〜N 未取代或被卤素取代的C 1 -C 6烷基; 或R 8，R 9和R 10是未被取代或被C 1 -C 3烷基取代的苯基， 烷基或卤素; 或R 10和R 11一起是1,2-亚苯基或C 2 -C 6 -C 6亚烷基，其是 未取代或被C 1 -C 4烷基或卤素取代。

    Oxime derivatives and the use thereof as latent acids
    15.
    发明申请
    Oxime derivatives and the use thereof as latent acids 有权
    肟衍生物及其作为潜伏酸的用途

    公开(公告)号：US20060068325A1

    公开(公告)日：2006-03-30

    申请号：US11262104

    申请日：2005-10-27

    申请人： Hitoshi Yamato ,  Toshikage Asakura ,  Akira Matsumoto ,  Masaki Ohwa

    发明人： Hitoshi Yamato ,  Toshikage Asakura ,  Akira Matsumoto ,  Masaki Ohwa

    IPC分类号： G03C1/76

    CPC分类号： G03F7/0392 ,  B33Y70/00 ,  G03F7/0045 ,  G03F7/0382

    摘要： New oxime sulfonate compounds of the formula I, II, III, IV, V, VI and VII R1 is for example C1-C18alkylsulfonyl, R2 is halogen or C1-C10haloalkyl; R3 is for example unsubstitude or substituted phenylenedisulfonyl, diphenylenedisulfonyl, or oxydiphenylenedisulfonyl; Ar1 is for example a direct bond, C1-C12alkylene; —O—C-bond or a —O—Si—bond which cleaves upon the action of an acid; A1, A2, A3, A4, A5, A6, A7, A8, A9, A10, A11 and A12 are for example a direct bond, —O—, or —S—, or are C1-C12alkylene or phenylene unsubstituted or substituted; Y0 is C1-C12alkylene which is for example substituted by OR4, or SR7; Y2 is e.g. a trivalent radical of C1-C12alkylene; Y3 is e.g. a tetravalent radical of C1-C12alkylene; X is halogen; Ar′1 is for example C1-C12alkyl which is unsubstituted or substituted; Ar″1 is for example phenylene; provided that at least one of the radicals Ar′1, Ar″11 is substituted by 1 to 3 groups of example halogen; R15, R16, R17 and R18 e.g. hydrogen or phenyl; R19, R20, R21, R22 and R23 are e.g. phenyl; are especially suitable for the preparation of photoresists.

    摘要翻译： 式I，II，III，IV，V，VI和VII的新的肟磺酸酯化合物

    Oxime derivatives and the use thereof as latent acids
    17.
    发明授权
    Oxime derivatives and the use thereof as latent acids 有权
    肟衍生物及其作为潜伏酸的用途

    公开(公告)号：US06261738B1

    公开(公告)日：2001-07-17

    申请号：US09533952

    申请日：2000-03-23

    申请人： Toshikage Asakura ,  Hitoshi Yamato ,  Masaki Ohwa ,  Jean-Luc Birbaum ,  Kurt Dietliker ,  Junichi Tanabe

    发明人： Toshikage Asakura ,  Hitoshi Yamato ,  Masaki Ohwa ,  Jean-Luc Birbaum ,  Kurt Dietliker ,  Junichi Tanabe

    IPC分类号： G03G7004

    CPC分类号： G03F7/039 ,  C07C251/62 ,  C07C309/00 ,  C07C309/65 ,  C07C317/32 ,  C07C323/47 ,  C07C381/00 ,  C07C2602/42 ,  C07D319/18 ,  C07D333/22 ,  G03F7/0045 ,  Y10S430/12

    摘要： Compounds of formula I, II and III, wherein wherein R1 is for example hydrogen, C1-C12alkyl, C3-C30cycloalkyl, C2-C12alkenyl, C4-C8cycloalkenyl, phenyl, which is unsubstituted or substituted, naphthyl, anthracyl or phenanthryl, unsubstituted or substituted, heteroaryl radical which is unsubstituted or substituted; wherein all radicals R1 with the exception of hydrogen can additionally be substituted by a group having a —O—C-bond or a —O—Si-bond which cleaves upon the action of an acid; R′1 is for example phenylene, naphthylene, diphenylene or oxydiphenylene, wherein these radicals are unsubstituted or substituted; R2 is halogen or C1-C10haloalkyl; R3 is for example C1-C18alkylsulfonyl, phenylsulfonyl, naphthylsulfonyl, anthracylsulfonyl or phenanthrylsulfonyl, wherein the groups are unsubstituted or substituted, or R3 is e.g. C2-C6haloalkanoyl, or halobenzoyl, R′3 is for example phenylenedisulfonyl, naphthylenedisulfonyl, diphenylenedisulfonyl, or oxydiphenylenedisulfonyl, wherein these radicals are unsubstituted or substituted, X is halogen; are especially suitable as phototsensitive acid-donors in chemically amplified resist formulations.

    摘要翻译： 式I，II和III的化合物，其中R1是例如氢，C1-C12烷基，C3-C30环烷基，C2-C12链烯基，C4-C8环烯基，苯基，未取代或取代的萘基，蒽基或菲基，未取代或取代的， 未取代或取代的杂芳基; 其中除氢之外的所有基团R1可以另外被具有在酸作用下切割的-O-C键或-O-Si键的基团取代; R'1是例如亚苯基，亚萘基，亚二苯基或氧联二苯基，其中这些基团是未取代的或被取代的; R2是卤素或C1-C10卤代烷基; R3是例如C1-C18烷基磺酰基，苯基磺酰基，萘基磺酰基，蒽磺酰基或菲基磺酰基，其中基团是未取代的或被取代的，或者R3是例如。 C 2 -C 6卤代烷酰基或卤代苯甲酰基，R'3是例如亚苯基二磺酰基，萘基二磺酰基，二苯基二磺酰基或氧基二苯基二磺酰基，其中这些基团是未取代的或被取代的，X是卤素; 在化学放大抗蚀剂配方中特别适合作为光敏酸供体。

    Sulphonium salt initiators
    18.
    发明授权
    Sulphonium salt initiators 有权
    锍盐引发剂

    公开(公告)号：US08652752B2

    公开(公告)日：2014-02-18

    申请号：US12681785

    申请日：2008-09-22

    申请人： Pascal Hayoz ,  Hitoshi Yamato ,  Toshikage Asakura

    发明人： Pascal Hayoz ,  Hitoshi Yamato ,  Toshikage Asakura

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/029 ,  C07D333/00 ,  C07D495/00

    CPC分类号： C07D307/83 ,  B33Y70/00 ,  C07D307/82 ,  C07D333/22 ,  C07D333/32 ,  C07D333/34 ,  C07D333/64

    摘要： Compounds of the Formula (I), wherein L1, L′1, L″1, L2, L′2, L″2, L3, L′3, L″3, L4, L′4 and L″4 for example are hydrogen or COT; R, R′ and R″ for example are hydrogen, C6-C12aryl or C3-C20heteroaryl; X, X′ and X″ for example are O, S, single bond, NRa or NCORa, T is for example hydrogen, C1-C20alkyl, C3-C12cycloalkyl, C2-C20alkenyl, C5-C12cycloalkenyl, C7-C18cycloalkylenaryl, C5-C18cycloalkylenheteroaryl, C6-C14aryl, providedthat at least one of R, R′ or R″ is unsubstituted or substituted C3-C20heteroaryl; and Y is an inorganic or organic anion; are suitable as photolatent acid generators.

    摘要翻译： 式（I）的化合物，其中L 1，L 1，L'1，L 2，L 2，L'2，L3，L'3，L'3， '4例如是氢或COT; R，R'和R“例如是氢，C 6 -C 12芳基或C 3 -C 20杂芳基; 例如，X，X'和X“是O，S，单键，NR a或NCOR a，T是例如氢，C 1 -C 20烷基，C 3 -C 12环烷基，C 2 -C 20链烯基，C 5 -C 12环烯基，C 7 -C 18环烷基芳基， C 18 -C 14芳基，其中R，R'或R“中的至少一个是未取代的或取代的C 3 -C 20杂芳基; Y为无机或有机阴离子; 适合作为光潜酸产生剂。

    Latent acids and their use
    19.
    发明授权
    Latent acids and their use 有权
    潜在酸及其用途

    公开(公告)号：US08580478B2

    公开(公告)日：2013-11-12

    申请号：US13028323

    申请日：2011-02-16

    申请人： Hitoshi Yamato ,  Toshikage Asakura ,  Akira Matsumoto ,  Keita Tanaka ,  Yuichi Nishimae

    发明人： Hitoshi Yamato ,  Toshikage Asakura ,  Akira Matsumoto ,  Keita Tanaka ,  Yuichi Nishimae

    IPC分类号： G03F7/004 ,  G03F7/20 ,  C07C69/753 ,  C07C69/63 ,  C07D311/74

    CPC分类号： C07C69/63 ,  B33Y70/00 ,  B33Y80/00 ,  C07C69/753 ,  C07C69/96 ,  C07C271/24 ,  C07C309/82 ,  C07D207/277 ,  C07D233/38 ,  C07D265/30 ,  C07D307/77 ,  C07D311/74 ,  C08F28/02 ,  G03F7/004 ,  G03F7/20

    摘要： The invention pertains to a compound generating an acid of the formula I or II, for instance corresponding sulfonium and iodonium salts, as well as corresponding sulfonyloximes wherein X is CH2 or CO; Y is O, NR4, S, O(CO), O(CO)O, O(CO)NR4, OSO2, O(CS), or O(CS)NR4; R1 is for example C1-C18alkyl, C1-C10haloalkyl, C2-C12alkenyl, C4-C30cycloalkenyl, phenyl-C1-C3-alkyl, C3-C30cycloalkyl, C3-C30cycloalkyl-C1-C18alkyl, interrupted C2-C18alkyl, interrupted C3-C30cycloalkyl, interrupted C3-C30cycloalkyl-C1-C18alkyl, interrupted C4-C30cycloalkenyl, phenyl, naphthyl, anthracyl, phenanthryl, biphenylyl, fluorenyl or heteroaryl, all unsubstituted or are substituted; or R1 is NR12R13; R2 and R3 are for example C3-C30cycloalkylene, C3-C30cycloalkyl-C1-C18alkylene, C1-C18alkylene, C1-C10haloalkylene, C2-C12alkenylene, C4-C30cycloalkenylene, phenylene, naphthylene, anthracylene, phenanthrylene, biphenylene or heteroarylene; all unsubstituted or substituted; R4 is for example C3-C30cycloalkyl, C3-C30cycloalkyl-C1-C18alkyl, C1-C18alkyl, C1-C10haloalkyl, C2-C12alkenyl, C4-C30cycloalkenyl, phenyl-C1-C3-alkyl; R12 and R13 are for example C3-C30cycloalkyl, C3-C30cycloalkyl-C1-C18alkyl, C1-C18alkyl, C1-C10haloalkyl, C2-C12alkenyl, C4-C30cycloalkenyl, phenyl-C1-C3-alkyl, Ar, (CO)R15, (CO)OR15 or SO2R15; and Ar is phenyl, biphenylyl, fluorenyl, naphthyl, anthracyl, phenanthryl or heteroaryl, all unsubstituted or substituted.

    摘要翻译： 本发明涉及产生式I或II的酸的化合物，例如相应的锍盐和碘鎓盐，以及其中X是CH 2或CO的相应的磺酰肟; Y是O，NR4，S，O（CO），O（CO）O，O（CO）NR4，OSO2，O（CS）或O（CS）NR4; R 1是例如C 1 -C 18烷基，C 1 -C 10卤代烷基，C 2 -C 12烯基，C 4 -C 30环烯基，苯基-C 1 -C 3烷基，C 3 -C 30环烷基，C 3 -C 30环烷基-C 1 -C 18烷基，间断的C 2 -C 18烷基，间断的C 3 -C 30环烷基， 间断的C 3 -C 30环烷基-C 1 -C 18烷基，间断的C 4 -C 30环烯基，苯基，萘基，蒽基，菲基，联苯基，芴基或杂芳基，全部未取代或被取代; 或R1是NR12R13; R2和R3是例如C 3 -C 30亚环烷基，C 3 -C 30环烷基-C 1 -C 18亚烷基，C 1 -C 18亚烷基，C 1 -C 10卤代亚烷基，C 2 -C 12亚烯基，C 4 -C 30亚环烯基，亚苯基，亚萘基，亚蒽基，亚菲基，亚联苯基或亚杂芳基。 全部未取代或取代; R4是例如C 3 -C 30环烷基，C 3 -C 30环烷基-C 1 -C 18烷基，C 1 -C 18烷基，C 1 -C 10卤代烷基，C 2 -C 12链烯基，C 4 -C 30环烯基，苯基-C 1 -C 3烷基; R 12和R 13例如为C 3 -C 30环烷基，C 3 -C 30环烷基-C 1 -C 18烷基，C 1 -C 18烷基，C 1 -C 10卤代烷基，C 2 -C 12烯基，C 4 -C 30环烯基，苯基-C 1 -C 3烷基，Ar，（CO）R 15 CO）OR15或SO2R15; 并且Ar是苯基，联苯基，芴基，萘基，蒽基，菲基或杂芳基，全部是未取代或取代的。

    Halogenated oxime derivatives and the use therof as latent acids
    20.
    发明授权
    Halogenated oxime derivatives and the use therof as latent acids 有权
    卤代肟衍生物和作为潜伏酸使用

    公开(公告)号：US08241822B2

    公开(公告)日：2012-08-14

    申请号：US12154333

    申请日：2008-05-22

    申请人： Hitoshi Yamato ,  Toshikage Asakura ,  Akira Matsumoto ,  Peter Murer ,  Tobias Hintermann

    发明人： Hitoshi Yamato ,  Toshikage Asakura ,  Akira Matsumoto ,  Peter Murer ,  Tobias Hintermann

    IPC分类号： C07C317/12 ,  G03F7/004

    CPC分类号： C07C251/48 ,  B33Y70/00 ,  C07C381/00 ,  C07C2603/18 ,  C07C2603/20 ,  C07C2603/40 ,  C07D209/86 ,  C07D307/91 ,  C07D333/76 ,  G03F7/0007 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0392

    摘要： Compounds of the formula I or II wherein R1 is C1-C10haloalkylsulfonyl, halobenzenesulfonyl, C2-C10haloalkanoyl, halobenzoyl; R2 is halogen or C1-C10haloalkyl; Ar1 is phenyl, biphenylyl, fluorenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl, all of which are optionally substituted; Ar′1 is for example phenylene, naphthylene, diphenylene, heteroarylene, oxydiphenylene, phenylene-D-D1-D-phenylene or —Ar″1-A1-Y1-A1-Ar″1—; wherein these radicals optionally are substituted; Ar″1 is phenylene, naphthylene, anthracylene, phenanthrylene, or heteroarylene, all optionally substituted; A1 is for example a direct bond, —O—, —S—, or —NR6—; Y1 inter alia is C1-C18alkylene; X is halogen; D is for example —O—, —S— or —NR6—; D1 inter alia is C1-C18alkylene; are particularly suitable as photolatent acids in ArF resist technology.

    摘要翻译： 式I或II的化合物，其中R 1是C 1 -C 10卤代烷基磺酰基，卤代苯磺酰基，C 2 -C 10卤代烷酰基，卤代苯甲酰基; R2是卤素或C1-C10卤代烷基; Ar1是苯基，联苯基，芴基，萘基，蒽基，菲基或杂芳基，它们都是任选被取代的; Ar'1例如为亚苯基，亚萘基，亚二苯基，亚杂芳基，氧联二苯基，亚苯基-D-D1-D-亚苯基或-Ar“1-A1-Y1-A1-Ar” 其中这些基团任选被取代; Ar 1是亚苯基，亚萘基，亚蒽基，亚菲基或亚杂芳基，全部被取代; A1是例如直接键，-O - ， - S - 或-NR 6 - ; Y1特别是C 1 -C 18亚烷基; X是卤素; D是例如-O - ， - S-或-NR 6 - ; D1特别是C 1 -C 18亚烷基; 在ArF抗蚀剂技术中特​​别适合作为光潜酸。