公开(公告)号：US5793788A

公开(公告)日：1998-08-11

申请号：US693806

申请日：1996-08-01

Applicant: Yuichi Inaba ,  Kiyoshi Fujihara ,  Masato Ishino ,  Takeshi Shimazaki ,  Isao Kidoguchi

Inventor： Yuichi Inaba ,  Kiyoshi Fujihara ,  Masato Ishino ,  Takeshi Shimazaki ,  Isao Kidoguchi

IPC: H01L33/30 ,  H01L33/32 ,  H01L33/40 ,  H01S5/042 ,  H01S5/223 ,  H01S5/227 ,  H01S5/30 ,  H01S3/19 ,  H01L23/48 ,  H01L33/00

CPC classification number: H01L33/40 ,  H01S5/0425 ,  H01L33/30 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/2231 ,  H01S5/2275 ,  H01S5/2277 ,  H01S5/3054

Abstract: A semiconductor light emitting element includes a p-type electrode which in turn includes a contact electrode layer including at least a Pt layer. Particularly, the semiconductor light emitting element further includes a layered structure including at least an n-type cladding layer, an active layer, and a p-type cladding layer; and a p-type contact layer formed above the layered structure, and the contact electrode layer is formed on the p-type contact layer.

Abstract translation: 半导体发光元件包括p型电极，该p型电极又包括至少包括Pt层的接触电极层。 特别地，半导体发光元件还包括至少包括n型包覆层，有源层和p型覆层的层状结构; 以及形成在层状结构上方的p型接触层，并且在p型接触层上形成接触电极层。

公开(公告)号：US4980829A

公开(公告)日：1990-12-25

申请号：US166519

申请日：1988-03-10

Applicant: Atsushi Okajima ,  Fumiyuki Yamano ,  Eri Katagiri ,  Noriyuki Yamasaki ,  Yuichi Inaba

Inventor： Atsushi Okajima ,  Fumiyuki Yamano ,  Eri Katagiri ,  Noriyuki Yamasaki ,  Yuichi Inaba

IPC: G06F17/28

CPC classification number: G06F17/2872

Abstract: A machine translation system capable of performing translation at a high processing speed with improved disambiguation rate in the parsing by applying grammar rules in dependence on the domains to which texts to be translated belong, objects of the texts and rules of sentences in the same text. The machine-translation system for translating a first language to a second language uses a grammer memory for storing grammar rules of the first or second language and a main memory for storing a variety of information, wherein the grammar rules stored in the grammar memory are prepared in groups at least on the basis of the domains to which texts to be translated belong and individual parts in the text. The system includes apparatus for deciding which of the grammar rules stored in the grammar memory should be applied to a given input text, and apparatus for translating the individual parts of the input text by applying the grammar rules determined on the basis of the result of decision made by the deciding apparatus.

Abstract translation: 一种机器翻译系统，能够以高处理速度执行翻译，通过应用语法规则，通过应用文本规则来翻译文本属于对象，文本的对象和相同文本中的句子规则，可以改善解析中的歧义率。 用于将第一语言翻译成第二语言的机器翻译系统使用用于存储第一或第二语言的语法规则的语法存储器和用于存储各种信息的主存储器，其中准备存储在语法存储器中的语法规则 至少基于要翻译的文本所属的领域和文本中的各个部分的组合。 该系统包括用于确定将语法存储器中存储的语法规则中的哪一个应用于给定输入文本的装置，以及用于通过应用基于决策结果确定的语法规则来翻译输入文本的各个部分的装置 由决定装置制造。

公开(公告)号：US20120298867A1

公开(公告)日：2012-11-29

申请号：US13514631

申请日：2010-12-06

Applicant: Takayuki Nishikawa ,  Yoshifumi Watabe ,  Yuichi Inaba ,  Takahiko Hirai

Inventor： Takayuki Nishikawa ,  Yoshifumi Watabe ,  Yuichi Inaba ,  Takahiko Hirai

IPC: G01J5/08 ,  G01J5/20

CPC classification number: G01J5/34 ,  G01J1/0488 ,  G01J5/0014 ,  G01J5/0018 ,  G01J5/04 ,  G01J5/045 ,  G01J5/08 ,  G01J5/0862 ,  G01J5/0875 ,  G01J5/602 ,  G08B17/125

Abstract: An infrared flame detector of the present invention has an infrared radiation receiving element accommodated in a package. In the infrared radiation receiving element, a set of two pyroelectric elements are arranged side by side and connected in anti-series on a pyroelectric element forming substrate. An infrared optical filter includes a filter forming substrate made of an infrared radiation transmitting material, a set of two narrowband transmission filter sections formed at positions respectively corresponding to positions of the pyroelectric elements on a first surface of the filter forming substrate and configured to transmit infrared radiation of a first selective wavelength and infrared radiation of a second selective wavelength, and a broadband blocking filter section formed on a second surface of the filter forming substrate and configured to absorb infrared radiation of a wavelength longer than an upper limit of an infrared reflection band.

Abstract translation: 本发明的红外线火焰探测器具有容纳在封装中的红外辐射接收元件。 在红外线辐射接收元件中，并排设置两组热电元件，并且在热电元件形成基板上以反串联方式连接。 红外光滤波器包括由红外辐射透射材料制成的滤光器形成基板，一组两个窄带透射滤光器部分，形成在分别对应于过滤器形成基板的第一表面上的热电元件的位置的位置处，并且被配置为透射红外线 第二选择波长的第一选择波长和红外辐射的辐射以及形成在过滤器形成基板的第二表面上并被配置为吸收长于红外反射带的上限的波长的红外辐射的宽带阻挡滤波器部分 。

公开(公告)号：US20090273046A1

公开(公告)日：2009-11-05

申请号：US11887732

申请日：2006-05-10

Applicant: Yuichi Inaba ,  Masahiro Kasano

Inventor： Yuichi Inaba ,  Masahiro Kasano

IPC: H01L31/0232 ,  H01L21/18

CPC classification number: H01L27/14621 ,  G02B5/201 ,  G02B5/286 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14685 ,  H01L31/02165

Abstract: In the formation of a multilayer interference filter that is included in a solid-state imaging device, at the outset, a titanium dioxide layer (401), a silicon dioxide layer (402), a titanium dioxide layer (403), and a spacer layer are successively laminated on an interlayer insulation film (304) to form a lower films. Next, the reflectance characteristics of the lower films are measured to specify the thickness of the lower films. When the thickness is deviated from the design value, the thickness of the spacer layer (404), and the thickness of upper films that include titanium dioxide layers (407, 409) and silicon dioxide layers (408, 410) are changed. Then, according to the changes, the spacer layer (404) is etched to regulate the thickness, and the upper films are formed thereon.

Abstract translation: 在固态成像装置中包含的多层干涉滤光片的形成中，首先，二氧化钛层（401），二氧化硅层（402），二氧化钛层（403）和间隔物 层连续地层压在层间绝缘膜（304）上以形成下膜。 接下来，测量下部膜的反射率特性以指定下部膜的厚度。 当厚度偏离设计值时，间隔层（404）的厚度和包括二氧化钛层（407,409）和二氧化硅层（408,410）的上部膜的厚度改变。 然后，根据变化，蚀刻间隔层（404）以调节厚度，并且在其上形成上部膜。

公开(公告)号：US20090011603A1

公开(公告)日：2009-01-08

申请号：US12020761

申请日：2008-01-28

Applicant: Yuichi Inaba ,  Yutaka Yamada ,  Shigehiro Morikawa

Inventor： Yuichi Inaba ,  Yutaka Yamada ,  Shigehiro Morikawa

IPC: H01L21/311

CPC classification number: H01L27/115 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7881

Abstract: The invention prevents a wiring layer in a memory region from being exposed to prevent a change in wire resistance and degradation of reliability. A SiO2 film as an etching stopper film which transmits ultraviolet light is formed on pad electrodes and an interlayer insulation film. Then, the SiO2 film on the pad electrodes is etched selectively and the SiO2 film in an EPROM region is left. A silicon nitride film and a polyimide film are then formed on the SiO2 film and on the pad electrodes where the SiO2 film is removed, as a protection film which does not transmit ultraviolet light. The silicon nitride film and the polyimide film on the pad electrodes and in the EPROM region are then selectively removed by etching. Since the SiO2 film functions as an etching stopper at this time, the interlayer insulation film under the SiO2 film is prevented from being etched and a control gate line metal layer is prevented from being exposed.

Abstract translation: 本发明防止存储区域中的布线层暴露，以防止电线电阻的变化和可靠性的劣化。 在焊盘电极和层间绝缘膜上形成作为透射紫外光的蚀刻停止膜的SiO 2膜。 然后，选择性地蚀刻焊盘电极上的SiO 2膜，并且留下EPROM区域中的SiO 2膜。 然后在SiO 2膜上除去SiO 2膜的焊盘电极上形成氮化硅膜和聚酰亚胺膜作为不透射紫外线的保护膜。 然后通过蚀刻选择性地去除焊盘电极和EPROM区域中的氮化硅膜和聚酰亚胺膜。 由于SiO 2膜此时用作蚀刻阻挡层，因此可以防止SiO 2膜下的层间绝缘膜被蚀刻，防止控制栅线金属层露出。

公开(公告)号：US20080303108A1

公开(公告)日：2008-12-11

申请号：US12187720

申请日：2008-08-07

Applicant: Masahiro Kasano ,  Yuichi Inaba ,  Takumi Yamaguchi

Inventor： Masahiro Kasano ,  Yuichi Inaba ,  Takumi Yamaguchi

IPC: H01L31/0232

CPC classification number: G02B5/201 ,  G01J3/513 ,  G02B5/285 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14685 ,  H01L31/02162 ,  H01L31/02164 ,  H01L31/02165

Abstract: Photoelectric converters are arranged two-dimensionally in a semiconductor substrate. A planarizing layer, a light shielding film, a further planarizing layer and condenser lenses are formed sequentially on the semiconductor substrate and the photoelectric converters. The light shielding film has apertures at positions corresponding to the photoelectric conversion devices. Multilayer interference filters that transmit either a red, green or blue wavelength component of light are disposed in the apertures.

Abstract translation: 光电转换器被二维布置在半导体衬底中。 在半导体基板和光电转换器上依次形成平坦化层，遮光膜，进一步的平坦化层和聚光透镜。 遮光膜在对应于光电转换装置的位置处具有孔。 透射光的红色，绿色或蓝色波长分量的多层干涉滤光片设置在孔中。

公开(公告)号：US20080272449A1

公开(公告)日：2008-11-06

申请号：US11665601

申请日：2005-10-14

Applicant: Yuichi Inaba ,  Masahiro Kasano

Inventor： Yuichi Inaba ,  Masahiro Kasano

IPC: H01L31/00 ,  H01L21/00

CPC classification number: H04N5/2254 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H04N5/335

Abstract: A solid-state image pickup device 1 has a construction in which a P-type semiconductor layer 102, an insulating layer 104, a color filter 106, a light transmitting layer 107, and a light focusing layer 108 are sequentially laminated on an N-type semiconductor layer 101. A plurality of photodiodes 103 are formed in the P-type semiconductor layer 102 on the insulating layer 104 side. A light shielding film 105 is formed in the insulating layer 104. The plurality of photodiodes 103 are densely mounted by being unequally arranged two-dimensionally. The light-focusing efficiency can be improved because the plurality of photodiodes 103 closely arranged to each other share the light transmitting layer 107 and the light focusing layer 108.

Abstract translation: 固体摄像装置1具有如下结构：P型半导体层102，绝缘层104，滤色器106，透光层107和光聚焦层108依次层叠在N- 在绝缘层104侧的P型半导体层102中形成多个光电二极管103。 在绝缘层104中形成有遮光膜105.多个光电二极管103通过不均匀地二维排列而密集地安装。 可以提高光聚焦效率，因为彼此紧密排列的多个光电二极管103共享透光层107和光聚焦层108。

公开(公告)号：US20070122935A1

公开(公告)日：2007-05-31

申请号：US11602179

申请日：2006-11-21

Applicant: Masahiro Kasano ,  Yuichi Inaba ,  Keisuke Tanaka ,  Takumi Yamaguchi

Inventor： Masahiro Kasano ,  Yuichi Inaba ,  Keisuke Tanaka ,  Takumi Yamaguchi

IPC: H01L21/00

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14687

Abstract: A manufacturing method of a solid-state imaging device prevents generation of a space due to insufficient filling of a conductive material. Materials constituting a multilayer film 41 are sequentially deposited on a semiconductor substrate, and portions respectively included in a plug formation intended region and a surrounding region that surrounds the plug formation intended region are removed from the deposited multilayer film 41. Next, the plug formation intended region and the surrounding region from which the portions have been removed is refilled with a single insulating material, and a hole is formed on the plug formation intended region by etching. Then, the formed hole is filled with a conductive material to therefore form a plug.

Abstract translation: 固态成像装置的制造方法防止由于导电材料的填充不充分而产生空间。 构成多层膜41的材料依次沉积在半导体衬底上，并且从沉积的多层膜41中去除分别包含在插塞形成预期区域中的部分和围绕插塞形成区域的周围区域。 接下来，使用单个绝缘材料重新填充已经去除了部分的插塞形成预期区域和周围区域，并且通过蚀刻在插塞形成预期区域上形成孔。 然后，形成的孔填充有导电材料，从而形成插头。

公开(公告)号：US07655569B2

公开(公告)日：2010-02-02

申请号：US12020761

申请日：2008-01-28

Applicant: Yuichi Inaba ,  Yutaka Yamada ,  Shigehiro Morikawa

Inventor： Yuichi Inaba ,  Yutaka Yamada ,  Shigehiro Morikawa

IPC: H01L21/311

CPC classification number: H01L27/115 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7881

Abstract: The invention prevents a wiring layer in a memory region from being exposed to prevent a change in wire resistance and degradation of reliability. A SiO2 film as an etching stopper film which transmits ultraviolet light is formed on pad electrodes and an interlayer insulation film. Then, the SiO2 film on the pad electrodes is etched selectively and the SiO2 film in an EPROM region is left. A silicon nitride film and a polyimide film are then formed on the SiO2 film and on the pad electrodes where the SiO2 film is removed, as a protection film which does not transmit ultraviolet light. The silicon nitride film and the polyimide film on the pad electrodes and in the EPROM region are then selectively removed by etching. Since the SiO2 film functions as an etching stopper at this time, the interlayer insulation film under the SiO2 film is prevented from being etched and a control gate line metal layer is prevented from being exposed.

Abstract translation: 本发明防止存储区域中的布线层暴露，以防止电线电阻的变化和可靠性的劣化。 在焊盘电极和层间绝缘膜上形成作为透射紫外光的蚀刻停止膜的SiO 2膜。 然后，选择性地蚀刻焊盘电极上的SiO 2膜，并且留下EPROM区域中的SiO 2膜。 然后在SiO 2膜上除去SiO 2膜的焊盘电极上形成氮化硅膜和聚酰亚胺膜作为不透射紫外线的保护膜。 然后通过蚀刻选择性地去除焊盘电极和EPROM区域中的氮化硅膜和聚酰亚胺膜。 由于SiO 2膜此时用作蚀刻阻挡层，因此可以防止SiO 2膜下的层间绝缘膜被蚀刻，防止控制栅线金属层露出。

公开(公告)号：US20060164720A1

公开(公告)日：2006-07-27

申请号：US11337599

申请日：2006-01-24

Applicant: Shinji Yoshida ,  Yuichi Inaba ,  Masahiro Kasano

Inventor： Shinji Yoshida ,  Yuichi Inaba ,  Masahiro Kasano

IPC: F21V9/04

CPC classification number: G02B5/284 ,  G02B5/285 ,  H04N5/2254

Abstract: A color filter is made from a silicon nitride, and has a multilayer structure including a silicon nitride layer and an airlayer. A multilayer film that selectively transmits green light has a seven-layer structure, in which two silicon nitride layers and one air layer is formed both above and below a spacer layer which is the air layer. On the other hand, each of a multilayer film that selectively transmits red light and a multilayer film that selectively transmits blue light has a silicon nitride layer as the spacer layer, and two silicon nitride layers and two air layers are formed both above and below the spacer layer. The silicon nitride layer is held by a holding part at a periphery thereof. Also, a hole is formed between multilayers for a manufacturing reason.

Abstract translation: 滤色器由氮化硅制成，并且具有包括氮化硅层和空气层的多层结构。 选择性地透过绿光的多层膜具有七层结构，其中在作为空气层的间隔层的上方和下方形成两个氮化硅层和一个空气层。 另一方面，选择性地透过红光的多层膜和选择性透射蓝色光的多层膜中的每一层均具有氮化硅层作为间隔层，并且在上下形成两个氮化硅层和两个空气层 间隔层。 氮化硅层由其周围的保持部保持。 此外，由于制造原因，在多层之间形成孔。