公开(公告)号：US07655569B2

公开(公告)日：2010-02-02

申请号：US12020761

申请日：2008-01-28

申请人： Yuichi Inaba ,  Yutaka Yamada ,  Shigehiro Morikawa

发明人： Yuichi Inaba ,  Yutaka Yamada ,  Shigehiro Morikawa

IPC分类号： H01L21/311

CPC分类号： H01L27/115 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7881

摘要： The invention prevents a wiring layer in a memory region from being exposed to prevent a change in wire resistance and degradation of reliability. A SiO2 film as an etching stopper film which transmits ultraviolet light is formed on pad electrodes and an interlayer insulation film. Then, the SiO2 film on the pad electrodes is etched selectively and the SiO2 film in an EPROM region is left. A silicon nitride film and a polyimide film are then formed on the SiO2 film and on the pad electrodes where the SiO2 film is removed, as a protection film which does not transmit ultraviolet light. The silicon nitride film and the polyimide film on the pad electrodes and in the EPROM region are then selectively removed by etching. Since the SiO2 film functions as an etching stopper at this time, the interlayer insulation film under the SiO2 film is prevented from being etched and a control gate line metal layer is prevented from being exposed.

摘要翻译： 本发明防止存储区域中的布线层暴露，以防止电线电阻的变化和可靠性的劣化。 在焊盘电极和层间绝缘膜上形成作为透射紫外光的蚀刻停止膜的SiO 2膜。 然后，选择性地蚀刻焊盘电极上的SiO 2膜，并且留下EPROM区域中的SiO 2膜。 然后在SiO 2膜上除去SiO 2膜的焊盘电极上形成氮化硅膜和聚酰亚胺膜作为不透射紫外线的保护膜。 然后通过蚀刻选择性地去除焊盘电极和EPROM区域中的氮化硅膜和聚酰亚胺膜。 由于SiO 2膜此时用作蚀刻阻挡层，因此可以防止SiO 2膜下的层间绝缘膜被蚀刻，防止控制栅线金属层露出。

公开(公告)号：US20090011603A1

公开(公告)日：2009-01-08

申请号：US12020761

申请日：2008-01-28

申请人： Yuichi Inaba ,  Yutaka Yamada ,  Shigehiro Morikawa

发明人： Yuichi Inaba ,  Yutaka Yamada ,  Shigehiro Morikawa

IPC分类号： H01L21/311

CPC分类号： H01L27/115 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7881

摘要： The invention prevents a wiring layer in a memory region from being exposed to prevent a change in wire resistance and degradation of reliability. A SiO2 film as an etching stopper film which transmits ultraviolet light is formed on pad electrodes and an interlayer insulation film. Then, the SiO2 film on the pad electrodes is etched selectively and the SiO2 film in an EPROM region is left. A silicon nitride film and a polyimide film are then formed on the SiO2 film and on the pad electrodes where the SiO2 film is removed, as a protection film which does not transmit ultraviolet light. The silicon nitride film and the polyimide film on the pad electrodes and in the EPROM region are then selectively removed by etching. Since the SiO2 film functions as an etching stopper at this time, the interlayer insulation film under the SiO2 film is prevented from being etched and a control gate line metal layer is prevented from being exposed.

摘要翻译： 本发明防止存储区域中的布线层暴露，以防止电线电阻的变化和可靠性的劣化。 在焊盘电极和层间绝缘膜上形成作为透射紫外光的蚀刻停止膜的SiO 2膜。 然后，选择性地蚀刻焊盘电极上的SiO 2膜，并且留下EPROM区域中的SiO 2膜。 然后在SiO 2膜上除去SiO 2膜的焊盘电极上形成氮化硅膜和聚酰亚胺膜作为不透射紫外线的保护膜。 然后通过蚀刻选择性地去除焊盘电极和EPROM区域中的氮化硅膜和聚酰亚胺膜。 由于SiO 2膜此时用作蚀刻阻挡层，因此可以防止SiO 2膜下的层间绝缘膜被蚀刻，防止控制栅线金属层露出。

公开(公告)号：US07741724B2

公开(公告)日：2010-06-22

申请号：US12060673

申请日：2008-04-01

申请人： Shigehiro Morikawa ,  Yuichi Inaba ,  Yuji Goto

发明人： Shigehiro Morikawa ,  Yuichi Inaba ,  Yuji Goto

IPC分类号： H01L23/48

CPC分类号： H01L24/05 ,  H01L2224/02166 ,  H01L2224/05093 ,  H01L2224/05095 ,  H01L2224/05096 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00

摘要： This invention is directed to offer a semiconductor device having a structure capable of relaxing a mechanical stress applied to a bonding pad. A third interlayer insulation film having via holes is formed on a second interlayer insulation film to cover a third wiring layer. A third conductive layer is formed in the via hole. The third interlayer insulation film is composed of an array of a plurality of hexagonal column-shaped interlayer insulation films. And the via hole and the third conductive layer are formed to surround each hexagonal column-shaped interlayer insulation film. A fourth wiring layer connected with the third wiring layer through the third conductive layer is formed. The fourth wiring layer makes an uppermost wiring layer in an embodiment of this invention and serves as the bonding pad.

摘要翻译： 本发明旨在提供一种具有能够缓和施加到接合垫的机械应力的结构的半导体器件。 具有通孔的第三层间绝缘膜形成在第二层间绝缘膜上以覆盖第三布线层。 在通孔中形成第三导电层。 第三层间绝缘膜由多个六边形柱状层间绝缘膜的阵列构成。 并且通孔和第三导电层形成为围绕每个六边形柱状层间绝缘膜。 形成通过第三导电层与第三布线层连接的第四布线层。 第四布线层在本发明的实施例中形成最上层的布线层，并且用作接合焊盘。

公开(公告)号：US20080237877A1

公开(公告)日：2008-10-02

申请号：US12060673

申请日：2008-04-01

申请人： Shigehiro Morikawa ,  Yuichi Inaba ,  Yuji Goto

发明人： Shigehiro Morikawa ,  Yuichi Inaba ,  Yuji Goto

IPC分类号： H01L23/538

CPC分类号： H01L24/05 ,  H01L2224/02166 ,  H01L2224/05093 ,  H01L2224/05095 ,  H01L2224/05096 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00

摘要： This invention is directed to offer a semiconductor device having a structure capable of relaxing a mechanical stress applied to a bonding pad. A third interlayer insulation film having via holes is formed on a second interlayer insulation film to cover a third wiring layer. A third conductive layer is formed in the via hole. The third interlayer insulation film is composed of an array of a plurality of hexagonal column-shaped interlayer insulation films. And the via hole and the third conductive layer are formed to surround each hexagonal column-shaped interlayer insulation film. A fourth wiring layer connected with the third wiring layer through the third conductive layer is formed. The fourth wiring layer makes an uppermost wiring layer in an embodiment of this invention and serves as the bonding pad.

摘要翻译： 本发明旨在提供一种具有能够缓和施加到接合垫的机械应力的结构的半导体器件。 具有通孔的第三层间绝缘膜形成在第二层间绝缘膜上以覆盖第三布线层。 在通孔中形成第三导电层。 第三层间绝缘膜由多个六边形柱状层间绝缘膜的阵列构成。 并且通孔和第三导电层形成为围绕每个六边形柱状层间绝缘膜。 形成通过第三导电层与第三布线层连接的第四布线层。 第四布线层在本发明的实施例中形成最上层的布线层，并且用作接合焊盘。

公开(公告)号：US20060164720A1

公开(公告)日：2006-07-27

申请号：US11337599

申请日：2006-01-24

申请人： Shinji Yoshida ,  Yuichi Inaba ,  Masahiro Kasano

发明人： Shinji Yoshida ,  Yuichi Inaba ,  Masahiro Kasano

IPC分类号： F21V9/04

CPC分类号： G02B5/284 ,  G02B5/285 ,  H04N5/2254

摘要： A color filter is made from a silicon nitride, and has a multilayer structure including a silicon nitride layer and an airlayer. A multilayer film that selectively transmits green light has a seven-layer structure, in which two silicon nitride layers and one air layer is formed both above and below a spacer layer which is the air layer. On the other hand, each of a multilayer film that selectively transmits red light and a multilayer film that selectively transmits blue light has a silicon nitride layer as the spacer layer, and two silicon nitride layers and two air layers are formed both above and below the spacer layer. The silicon nitride layer is held by a holding part at a periphery thereof. Also, a hole is formed between multilayers for a manufacturing reason.

摘要翻译： 滤色器由氮化硅制成，并且具有包括氮化硅层和空气层的多层结构。 选择性地透过绿光的多层膜具有七层结构，其中在作为空气层的间隔层的上方和下方形成两个氮化硅层和一个空气层。 另一方面，选择性地透过红光的多层膜和选择性透射蓝色光的多层膜中的每一层均具有氮化硅层作为间隔层，并且在上下形成两个氮化硅层和两个空气层 间隔层。 氮化硅层由其周围的保持部保持。 此外，由于制造原因，在多层之间形成孔。

公开(公告)号：US06678299B1

公开(公告)日：2004-01-13

申请号：US09587588

申请日：2000-06-02

申请人： Yuichi Inaba ,  Masahiro Kito

发明人： Yuichi Inaba ,  Masahiro Kito

IPC分类号： H01S522

CPC分类号： H01S5/227 ,  H01S5/06226 ,  H01S5/1064 ,  H01S5/12 ,  H01S5/1228 ,  H01S5/2022 ,  H01S5/2224 ,  H01S5/2275 ,  H01S5/3072

摘要： The semiconductor laser device according to the present invention includes: a semiconductor substrate; an active layer having a stripe structure formed on the semiconductor substrate; and a buried layer formed on the semiconductor substrate and in a vicinity of the active layer, the buried layer including Fe and Ti.

摘要翻译： 根据本发明的半导体激光器件包括：半导体衬底; 具有形成在半导体衬底上的条纹结构的有源层; 以及形成在所述半导体衬底上并且在所述有源层附近的掩埋层，所述掩埋层包括Fe和Ti。

公开(公告)号：US07750354B2

公开(公告)日：2010-07-06

申请号：US12187720

申请日：2008-08-07

申请人： Masahiro Kasano ,  Yuichi Inaba ,  Takumi Yamaguchi

发明人： Masahiro Kasano ,  Yuichi Inaba ,  Takumi Yamaguchi

IPC分类号： H01L29/20

CPC分类号： G02B5/201 ,  G01J3/513 ,  G02B5/285 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14685 ,  H01L31/02162 ,  H01L31/02164 ,  H01L31/02165

摘要： Photoelectric converters are arranged two-dimensionally in a semiconductor substrate. A planarizing layer, a light shielding film, a further planarizing layer and condenser lenses are formed sequentially on the semiconductor substrate and the photoelectric converters. The light shielding film has apertures at positions corresponding to the photoelectric conversion devices. Multilayer interference filters that transmit either a red, green or blue wavelength component of light are disposed in the apertures.

摘要翻译： 光电转换器被二维布置在半导体衬底中。 在半导体基板和光电转换器上依次形成平坦化层，遮光膜，进一步的平坦化层和聚光透镜。 遮光膜在对应于光电转换装置的位置处具有孔。 透射光的红色，绿色或蓝色波长分量的多层干涉滤光片设置在孔中。

公开(公告)号：US20070188635A1

公开(公告)日：2007-08-16

申请号：US11633583

申请日：2006-12-05

申请人： Takumi Yamaguchi ,  Yuichi Inaba ,  Daisuke Ueda

发明人： Takumi Yamaguchi ,  Yuichi Inaba ,  Daisuke Ueda

IPC分类号： H04N9/04

CPC分类号： H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643

摘要： A solid-state imaging device 101 is composed of a transparent film 204, a color filter 205, a planarizing film 207, and a plurality of microlenses 208 that are sequentially formed on a semiconductor substrate 201. A photodiode 202 is formed in a surface of the semiconductor substrate 201 that is closer to the transparent film 204. A light shielding film 203 is formed in a surface of the transparent film 204 that is closer to the semiconductor substrate 201. Color filters 205 respectively corresponding to two adjacent pixels are partitioned by a light shielding wall 206. The light shielding wall 206 is a λ/4 multilayer film that reflects visible light.

摘要翻译： 固态成像装置101由依次形成在半导体基板201上的透明膜204，滤色器205，平坦化膜207和多个微透镜208构成。光电二极管202形成在 更靠近透明膜204的半导体衬底201.在透明膜204的更靠近半导体衬底201的表面中形成遮光膜203.分别对应于两个相邻像素的滤色器205被分隔开 遮光壁206.遮光壁206是反射可见光的λ/ 4多层膜。

公开(公告)号：US20060285005A1

公开(公告)日：2006-12-21

申请号：US11452952

申请日：2006-06-15

申请人： Yuichi Inaba ,  Masahiro Kasano

发明人： Yuichi Inaba ,  Masahiro Kasano

IPC分类号： H04N5/225

CPC分类号： H04N5/335 ,  H01L27/14621 ,  H01L27/14625 ,  H04N9/045

摘要： A solid-state imaging device is composed of a P-type semiconductor layer, an interlayer insulation film, a multilayer interference filter and condenser lenses which have been successively laminated on an N-type semiconductor layer. A photodiode, in which N-type impurities have been ion-implanted, is formed per pixel in the P-type semiconductor layer on the interlayer insulation film side. The multilayer interference filter has a composition including λ/4 multilayer films and a plurality of spacer layers sandwiched therebetween. The λ/4 multilayer films are composed of alternately laminated monotitanium dioxide layers and monosilicon dioxide layers that have the same optical thickness. The spacer layers have optical thicknesses corresponding to colors of light they are to transmit. A spacer layer is not included in a green region. Instead, two monotitanium dioxide layers, each of which constitutes a λ/4 multilayer film, are adjoined to make a monotitanium dioxide layer with an optical thickness of λ/2.

摘要翻译： 固态成像装置由已连续层叠在N型半导体层上的P型半导体层，层间绝缘膜，多层干涉滤光片和聚光透镜构成。 在层间绝缘膜侧的P型半导体层中，每像素形​​成已经离子注入了N型杂质的光电二极管。 多层干涉滤光器具有包括λ/ 4多层膜和夹在其间的多个间隔层的组成。 λ/ 4多层膜由具有相同光学厚度的交替层叠的单二氧化钛层和单二氧化硅层构成。 间隔层具有对应于它们要发射的光的颜色的光学厚度。 间隔层不包括在绿色区域中。 相反，两个单一二氧化钛层（其各自构成λ/ 4多层膜）被邻接以制造光学厚度为λ/ 2的单二氧化钛层。

公开(公告)号：US20120298867A1

公开(公告)日：2012-11-29

申请号：US13514631

申请日：2010-12-06

申请人： Takayuki Nishikawa ,  Yoshifumi Watabe ,  Yuichi Inaba ,  Takahiko Hirai

发明人： Takayuki Nishikawa ,  Yoshifumi Watabe ,  Yuichi Inaba ,  Takahiko Hirai

IPC分类号： G01J5/08 ,  G01J5/20

CPC分类号： G01J5/34 ,  G01J1/0488 ,  G01J5/0014 ,  G01J5/0018 ,  G01J5/04 ,  G01J5/045 ,  G01J5/08 ,  G01J5/0862 ,  G01J5/0875 ,  G01J5/602 ,  G08B17/125

摘要： An infrared flame detector of the present invention has an infrared radiation receiving element accommodated in a package. In the infrared radiation receiving element, a set of two pyroelectric elements are arranged side by side and connected in anti-series on a pyroelectric element forming substrate. An infrared optical filter includes a filter forming substrate made of an infrared radiation transmitting material, a set of two narrowband transmission filter sections formed at positions respectively corresponding to positions of the pyroelectric elements on a first surface of the filter forming substrate and configured to transmit infrared radiation of a first selective wavelength and infrared radiation of a second selective wavelength, and a broadband blocking filter section formed on a second surface of the filter forming substrate and configured to absorb infrared radiation of a wavelength longer than an upper limit of an infrared reflection band.

摘要翻译： 本发明的红外线火焰探测器具有容纳在封装中的红外辐射接收元件。 在红外线辐射接收元件中，并排设置两组热电元件，并且在热电元件形成基板上以反串联方式连接。 红外光滤波器包括由红外辐射透射材料制成的滤光器形成基板，一组两个窄带透射滤光器部分，形成在分别对应于过滤器形成基板的第一表面上的热电元件的位置的位置处，并且被配置为透射红外线 第二选择波长的第一选择波长和红外辐射的辐射以及形成在过滤器形成基板的第二表面上并被配置为吸收长于红外反射带的上限的波长的红外辐射的宽带阻挡滤波器部分 。