公开(公告)号：US06305618B1

公开(公告)日：2001-10-23

申请号：US09742541

申请日：2000-12-22

Applicant: Yung-Fa Lin

Inventor： Yung-Fa Lin

IPC: B05B110

CPC classification number: B60Q1/2684 ,  B60S1/52

Abstract: An Illuminated Windshield Wiper Nozzle is designed with a nozzle installed at the outlet of a channel inside the base. The channel is connected with the auto's pump and water tank. Water is pumped into the channel and sprays out of the nozzle. The creation features a transparent base equipped with an illuminator at front end. The above construction enables the illuminator to give light at the same time when the pump is started to spray water, thus producing a wonderful effect.

Abstract translation: 照明的挡风玻璃刮水器喷嘴设计有一个安装在基座内通道出口处的喷嘴。 通道与汽车的水泵和水箱连接。 水被泵入通道并从喷嘴喷出。 创作的特点是在前端装有照明器的透明底座。 上述结构使得照明器在泵开始喷水的同时发光，从而产生奇妙的效果。

公开(公告)号：US5663108A

公开(公告)日：1997-09-02

申请号：US663572

申请日：1996-06-13

Applicant: Yung-Fa Lin

Inventor： Yung-Fa Lin

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/469

CPC classification number: H01L21/76885 ,  H01L23/5226 ,  H01L23/53257 ,  H01L2924/0002

Abstract: A new approach for creating metal pillar via structures, for multilevel metallization structures, used in the fabrication of MOSFET devices, has been developed. Consecutive metal depositions are performed, followed by a RIE procedure, used to create the desired first level metallization shape in the metallizations. Another RIE procedure than selectively forms the metal pillar via structure on the underlying first level metallization structure. Composite dielectric material, including a spin on glass layer, is used to fill the spaces between metal structures. Chemical mechanical polishing is used to create the desired planarity, followed by the construction of a second level metallization structure, contacting the underlying first level metallization structure by use of the metal pillar via structure.

Abstract translation: 已经开发了用于制造MOSFET器件的用于多层金属化结构的金属柱通孔结构的新方法。 执行连续的金属沉积，然后进行RIE程序，用于在金属化中产生所需的一级金属化形状。 另一个RIE程序比在底层的一级金属化结构上选择性地形成金属柱通孔结构。 包括玻璃层上的复合介电材料用于填充金属结构之间的空间。 使用化学机械抛光来产生所需的平面度，随后构建第二级金属化结构，通过使用金属柱通孔结构使下层的第一级金属化结构接触。

公开(公告)号：US5642567A

公开(公告)日：1997-07-01

申请号：US553899

申请日：1995-11-06

Applicant: Yung-Fa Lin

Inventor： Yung-Fa Lin

IPC: A62B3/00 ,  B25D1/00 ,  B25F1/00

CPC classification number: B25D1/00 ,  A62B3/005 ,  B25D2250/271 ,  B25D2250/295

Abstract: An emergency escape apparatus for use in a car includes an elongated body and a mounting seat for receiving the elongated body. The elongated body has a head portion and a handle portion which is connected integrally to the head portion. The elongated body further has a channel which extends toward and which is communicated with the exterior of the elongated body. A rigid striking member is fixed to the head portion and has a tapered end which extends out of the head portion. A needle member is received slidably in the channel of the elongated body and has a sharp end which is extendible from and retractable into the elongated body.

Abstract translation: 用于汽车的紧急逃生装置包括细长体和用于容纳细长体的安装座。 细长体具有与头部一体地连接的头部和手柄部。 细长主体还具有朝向并且与细长主体的外部连通的通道。 刚性撞击构件固定到头部，并且具有从头部延伸出的锥形端。 针构件被可滑动地容纳在细长主体的通道中，并且具有尖端，该尖端可延伸并伸缩到细长主体中。

公开(公告)号：US08541278B2

公开(公告)日：2013-09-24

申请号：US13234132

申请日：2011-09-15

Applicant: Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Yi-Chun Shih

Inventor： Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Yi-Chun Shih

IPC: H01L21/336

CPC classification number: H01L29/66666 ,  H01L21/2255 ,  H01L21/2256 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0886 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/456 ,  H01L29/7811 ,  H01L29/7813

Abstract: A method for fabricating a super-junction semiconductor power device with reduced Miller capacitance includes the following steps. An N-type substrate is provided and a P-type epitaxial layer is formed on the N-type substrate. At least a trench is formed in the P-type epitaxial layer followed by forming a buffer layer on interior surface in the trench. An N-type dopant layer is filled into the trench and then the N-type dopant layer is etched to form a recessed structure at an upper portion of the trench. A gate oxide layer is formed, and simultaneously, dopants in the N-type dopant layer diffuse into the P-type epitaxial layer, forming an N-type diffusion layer. Finally, a gate conductor is filled into the recessed structure and an N-type source doped region is formed around the gate conductor in the P-type epitaxial layer.

公开(公告)号：US08536003B2

公开(公告)日：2013-09-17

申请号：US13211304

申请日：2011-08-17

Applicant: Yung-Fa Lin ,  Shou-Yi Hsu ,  Yi-Lin Sun

Inventor： Yung-Fa Lin ,  Shou-Yi Hsu ,  Yi-Lin Sun

IPC: H01L21/8238

CPC classification number: H01L21/2257 ,  H01L29/04 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66712 ,  H01L29/7811

Abstract: A method for fabricating a semiconductor power device includes the following steps. First, a substrate having thereon at least a semiconductor layer and a pad layer is provided. Then, at least a trench is etched into the pad layer and the semiconductor layer followed by depositing a dopant source layer in the trench and on the pad layer. A process is carried out thermally driving in dopants of the dopant source layer into the semiconductor layer. A rapid thermal process is performed to mend defects in the dopant source layer and defects between the dopant source layer and the semiconductor layer. Finally, a polishing process is performed to remove the dopant source layer from a surface of the pad layer.

Abstract translation: 一种制造半导体功率器件的方法包括以下步骤。 首先，提供其上具有至少半导体层和衬垫层的衬底。 然后，将至少一个沟槽蚀刻到衬垫层和半导体层中，随后在沟槽和衬垫层中沉积掺杂剂源层。 对掺杂剂源层的掺杂剂进行半导体层的热驱动。 进行快速热处理以修补掺杂剂源层中的缺陷和掺杂剂源层和半导体层之间的缺陷。 最后，进行抛光处理以从衬垫层的表面去除掺杂剂源层。

公开(公告)号：US20130203229A1

公开(公告)日：2013-08-08

申请号：US13537080

申请日：2012-06-29

Applicant: Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Chia-Hao Chang

Inventor： Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Chia-Hao Chang

IPC: H01L21/336 ,  H01L21/322

CPC classification number: H01L29/7802 ,  H01L21/02238 ,  H01L21/2255 ,  H01L21/30604 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/66727

Abstract: The present invention provides a method of reducing a surface doping concentration of a doped diffusion region. First, a semiconductor substrate is provided. The semiconductor substrate has the doped diffusion region disposed therein, and the doped diffusion region is in contact with a surface of the semiconductor substrate. A doping concentration of the doped diffusion region close to the surface is larger than a doping concentration of the doped diffusion region away from the surface. Then, a thermal oxidation process is performed to form an oxide layer on the surface of the semiconductor substrate. A part of the doped diffusion region in contact with the surface reacts with oxygen to form a part of the oxide layer. Then, the oxide layer is removed.

Abstract translation: 本发明提供了降低掺杂扩散区域的表面掺杂浓度的方法。 首先，提供半导体基板。 半导体衬底具有设置在其中的掺杂扩散区，并且掺杂扩散区与半导体衬底的表面接触。 接近表面的掺杂扩散区域的掺杂浓度大于掺杂扩散区域远离表面的掺杂浓度。 然后，进行热氧化处理，以在半导体衬底的表面上形成氧化物层。 与表面接触的掺杂扩散区的一部分与氧反应形成氧化物层的一部分。 然后，除去氧化物层。

公开(公告)号：US20130153994A1

公开(公告)日：2013-06-20

申请号：US13556166

申请日：2012-07-23

Applicant: Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Chia-Hao Chang

Inventor： Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Chia-Hao Chang

IPC: H01L21/336 ,  H01L29/78

CPC classification number: H01L29/66734 ,  H01L21/26586 ,  H01L27/088 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0886 ,  H01L29/1095 ,  H01L29/6653 ,  H01L29/7813

Abstract: The present invention provides a manufacturing method of a trench type power transistor device with a super junction. First, a substrate of a first conductivity type is provided, and then an epitaxial layer of a second conductive type is formed on the substrate. Next, a through hole is formed in the epitaxial layer, and the through hole penetrates through the epitaxial layer. Two doped drain regions of the first conductivity type are then formed in the epitaxial layer respectively at two sides of the through hole, and the doped drain regions extend from a top surface of the epitaxial layer to be in contact with the substrate.

Abstract translation: 本发明提供一种具有超结的沟槽型功率晶体管器件的制造方法。 首先，提供第一导电类型的衬底，然后在衬底上形成第二导电类型的外延层。 接下来，在外延层中形成通孔，并且通孔穿过外延层。 然后分别在通孔的两侧在外延层中形成第一导电类型的两个掺杂漏极区，并且掺杂漏极区从外延层的顶表面延伸以与衬底接触。

公开(公告)号：US20130043528A1

公开(公告)日：2013-02-21

申请号：US13451557

申请日：2012-04-20

Applicant: Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Chia-Hao Chang ,  Chia-Wei Chen

Inventor： Yung-Fa Lin ,  Shou-Yi Hsu ,  Meng-Wei Wu ,  Main-Gwo Chen ,  Chia-Hao Chang ,  Chia-Wei Chen

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/7827 ,  H01L21/2255 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66666 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7813

Abstract: The present invention provides a power transistor device including a substrate, a first epitaxial layer, a doped diffusion region, a second epitaxial layer, a doped base region, and a doped source region. The substrate, the first epitaxial layer, the second epitaxial layer and the doped source region have a first conductive type, and the doped diffusion region and the doped base region have a second conductive type. The first epitaxial layer and the second epitaxial layer are sequentially disposed on the substrate, and the doped diffusion region is disposed in the first epitaxial layer. The doped base region is disposed in the second epitaxial layer and contacts the doped diffusion region, and the doped source region is disposed in the doped base region. A doping concentration of the second epitaxial layer is less than a doping concentration of the first epitaxial layer.

Abstract translation: 本发明提供一种功率晶体管器件，其包括衬底，第一外延层，掺杂扩散区，第二外延层，掺杂基极区和掺杂源极区。 衬底，第一外延层，第二外延层和掺杂源极区域具有第一导电类型，并且掺杂扩散区域和掺杂基极区域具有第二导电类型。 第一外延层和第二外延层依次设置在基板上，掺杂扩散区域设置在第一外延层中。 掺杂基区设置在第二外延层中并与掺杂扩散区接触，并且掺杂源区设置在掺杂基区中。 第二外延层的掺杂浓度小于第一外延层的掺杂浓度。

公开(公告)号：US20100284196A1

公开(公告)日：2010-11-11

申请号：US12436145

申请日：2009-05-06

Applicant: Yung-Fa Lin

Inventor： Yung-Fa Lin

IPC: B60Q1/26

CPC classification number: B60Q1/323

Abstract: A vehicle door safety warning lamp is provided. A light source is respectively disposed on each side of a light socket, and each light source is electrically connected to a power supply device of a vehicle. A white or transparent first shade body and a colored (for example, red or yellow) second shade body cover the two sides of the light socket. When a vehicle door is opened, the light sources disposed on the two sides of the light socket emit lights at the same time, light rays from the first shade body are used to irradiate a traveling path of passengers, and light rays from the second shade body are used to warn other vehicles at the back, thereby improving the safety of the passengers when getting on and off the passenger vehicles (for example, buses or touring vehicles).

Abstract translation: 提供车门安全警示灯。 光源分别设置在灯座的每一侧，并且每个光源电连接到车辆的电源装置。 白色或透明的第一个遮光罩和彩色（例如红色或黄色）第二个遮光罩遮盖灯座的两侧。 当车门打开时，设置在灯座两侧的光源同时发光，来自第一遮阳体的光线用于照射乘客的行进路径，并且来自第二帘子的光线 身体用于警告后方的其他车辆，从而提高乘客在乘客车辆（例如公共汽车或旅游车辆）上的安全性。

公开(公告)号：US20090294750A1

公开(公告)日：2009-12-03

申请号：US12325067

申请日：2008-11-28

Applicant: Jen-Chi Chuang ,  Yung-Fa Lin ,  Ming-Jeng Huang

Inventor： Jen-Chi Chuang ,  Yung-Fa Lin ,  Ming-Jeng Huang

IPC: H01L45/00

CPC classification number: H01L45/144 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/124 ,  H01L45/126 ,  H01L45/148 ,  H01L45/1691

Abstract: An exemplary phase change memory device is provided, including a substrate with a first electrode formed thereover. A first dielectric layer is formed over the first electrode and the substrate. A plurality of cup-shaped heating electrodes is respectively disposed in a portion of the first dielectric layer. A first insulating layer is formed over the first dielectric layer, partially covering the cup-shaped heating electrodes and the first dielectric layer therebetween. A second insulating layer is formed over the first dielectric layer, partially covering the cup-shaped heating electrodes and the first dielectric layer therebetween. A pair of phase change material layers is respectively disposed on opposing sidewalls of the second insulating layer and contacting with one of the cup-shaped heating electrodes. A pair of first conductive layers is formed on the second insulating layer along the second direction, respectively.

Abstract translation: 提供了一种示例性相变存储器件，包括其上形成有第一电极的衬底。 第一电介质层形成在第一电极和衬底之上。 多个杯形加热电极分别设置在第一电介质层的一部分中。 在第一电介质层上形成第一绝缘层，部分覆盖杯形加热电极和第一绝缘层之间的第一介电层。 在第一电介质层上形成第二绝缘层，部分覆盖杯形加热电极和第一绝缘层之间的第一介电层。 一对相变材料层分别设置在第二绝缘层的相对的侧壁上并与杯形加热电极之一接触。 一对第一导电层分别沿第二方向形成在第二绝缘层上。