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    Methods and Structures for Using Diamond in the Production of MEMS
    11.
    发明申请
    Methods and Structures for Using Diamond in the Production of MEMS 有权
    使用钻石生产MEMS的方法和结构

    公开(公告)号：US20140220723A1

    公开(公告)日：2014-08-07

    申请号：US13718859

    申请日：2012-12-18

    Applicant: ANALOG DEVICES, INC.

    Inventor： Fang Liu ,  Kuang L. Yang

    IPC: B81C1/00

    CPC classification number: B81C1/00801 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2203/0118 ,  H04R19/005

    Abstract: A MEMS device with movable MEMS structure and electrodes is produced by fabricating electrodes and shielding the electrodes with diamond buttons during subsequent fabrication steps, such as the etching of sacrificial oxide using vapor HF. In some embodiments, the diamond buttons are removed after the movable MEMS structure is released.

    Abstract translation: 具有可移动MEMS结构和电极的MEMS器件通过在后续制造步骤中制造电极并用金刚石按钮屏蔽电极而产生，例如使用蒸气HF蚀刻牺牲氧化物。 在一些实施例中，在可移动的MEMS结构被释放之后去除金刚石按钮。

    Microchip with Blocking Apparatus and Method of Fabricating Microchip
    12.
    发明申请
    Microchip with Blocking Apparatus and Method of Fabricating Microchip 有权
    Microchip具有封装装置和制造Microchip的方法

    公开(公告)号：US20140203422A1

    公开(公告)日：2014-07-24

    申请号：US14224107

    申请日：2014-03-25

    Applicant: Analog Devices, Inc.

    Inventor： Li Chen ,  Thomas Kieran Nunan ,  Kuang L. Yang

    IPC: B81B7/00

    CPC classification number: B81C3/001 ,  B81B7/007 ,  B81C1/00269 ,  B81C2203/0109 ,  B81C2203/019 ,  B81C2203/035

    Abstract: A microchip has a base die with a conductive interconnect and an isolation trench around at least a portion of the conductive interconnect, and a cap die secured to the base die. A seal, formed from a metal material, is positioned between the base die and the cap die to secure them together. The microchip also has a blocking apparatus, between the isolation trench and the metal seal, that at least in part prevents the metal material from contacting the interconnect.

    Abstract translation: 微芯片具有基底裸片，其具有导电互连和围绕导电互连的至少一部分的隔离沟槽，以及固定到基模的帽模。 由金属材料形成的密封件位于基模和盖模之间，以将它们固定在一起。 微芯片还具有在隔离沟槽和金属密封件之间的阻挡装置，至少部分地防止金属材料与互连件接触。

    SELF-CALIBRATED HEAVY METAL DETECTOR
    15.
    发明申请
    SELF-CALIBRATED HEAVY METAL DETECTOR 审中-公开

    公开(公告)号：US20180172631A1

    公开(公告)日：2018-06-21

    申请号：US15383415

    申请日：2016-12-19

    Applicant: Analog Devices, Inc.

    Inventor： Chen Yang ,  Yumeng Liu ,  Li Chen ,  Kuang L. Yang

    IPC: G01N27/447

    Abstract: A microfluidic ion detector for detecting heavy metal ions in liquid and particulate matter from gas samples is described. The microfluidic ion detector includes a sample extraction structure for extracting sample ions from a sample liquid or extracting sample ions from the particulate matter of a gas sample, a separation structure for separating sample ions of different types once extracted, and a detection structure for detecting the sample ions. The microfluidic ion detector also includes a reference reservoir providing a reference ion against which the sample may be calibrated based on the operation of the separation structure. A portable, self-calibrating ion detector may be realized by including the described components on a single substrate.

    Apparatus and Method for Shielding and Biasing in MEMS Devices Encapsulated by Active Circuitry
    19.
    发明申请
    Apparatus and Method for Shielding and Biasing in MEMS Devices Encapsulated by Active Circuitry 审中-公开
    用于主动电路封装的MEMS器件中的屏蔽和偏置的装置和方法

    公开(公告)号：US20140374850A1

    公开(公告)日：2014-12-25

    申请号：US13926384

    申请日：2013-06-25

    Applicant: Analog Devices, Inc.

    Inventor： Li Chen ,  Thomas Kieran Nunan ,  Kuang L. Yang ,  Jeffrey Gregory

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/0029 ,  B81C1/00238 ,  B81C1/00349 ,  H01L21/02126 ,  H01L25/0657 ,  H01L2224/81801 ,  H01L2924/10253 ,  H01L2924/1461

    Abstract: One or more conductive shielding plates are formed in a standard ASIC wafer top metal layer, e.g., for blocking cross-talk from MEMS device structure(s) on the MEMS wafer to circuitry on the ASIC wafer when the MEMS device is capped directly by the ASIC wafer in a wafer-level chip scale package. Generally speaking, a shielding plate should be at least slightly larger than the MEMS device structure it is shielding (e.g., a movable MEMS structure such as an accelerometer proof mass or a gyroscope resonator), and the shielding plate cannot be in contact with the MEMS device structure during or after wafer bonding. Thus, a recess is formed to ensure that there is sufficient cavity space away from the top surface of the MEMS device structure. The shielding plate is electrically conductive and can be biased, e.g., to the same voltage as the opposing MEMS device structure in order to maintain zero electrostatic attraction force between the MEMS device structure and the shielding plate.

    Abstract translation: 在标准ASIC晶片顶部金属层中形成一个或多个导电屏蔽板，例如，当MEMS器件直接由该芯片封装时，用于阻止从MEMS晶片上的MEMS器件结构到ASIC晶片上的电路的串扰 ASIC晶圆采用晶圆级芯片级封装。 一般来说，屏蔽板应至少稍微大于被屏蔽的MEMS器件结构（例如，可移动MEMS结构，例如加速度计质量块或陀螺仪谐振器），并且屏蔽板不能与MEMS接触 晶片接合期间或之后的器件结构。 因此，形成凹部以确保离开MEMS器件结构的顶表面有足够的空腔。 屏蔽板是导电的，并且可以被偏置，例如与相对的MEMS器件结构相同的电压，以便在MEMS器件结构和屏蔽板之间维持零静电吸引力。

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