公开(公告)号：US10734223B2

公开(公告)日：2020-08-04

申请号：US16417938

申请日：2019-05-21

Applicant: ASM IP Holding B.V.

Inventor： Miika Mattinen ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/56 ,  H01L29/786 ,  H01L29/24 ,  C23C16/30 ,  H01L29/74 ,  H01L29/778 ,  H01L29/66 ,  C23C16/52

Abstract: A method for depositing a metal chalcogenide on a substrate by cyclical deposition is disclosed. The method may include, contacting the substrate with at least one metal containing vapor phase reactant and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a metal chalcogenide deposited by the methods of the disclosure are also provided.

公开(公告)号：US10731249B2

公开(公告)日：2020-08-04

申请号：US15897578

申请日：2018-02-15

Applicant: ASM IP Holding B.V.

Inventor： Timo Hatanpää ,  Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  H01L21/285 ,  C23C16/40 ,  H01L23/532 ,  H01L21/768

Abstract: A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.

公开(公告)号：US20190272993A1

公开(公告)日：2019-09-05

申请号：US16417938

申请日：2019-05-21

Applicant: ASM IP Holding B.V.

Inventor： Miika Mattinen ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/02 ,  C23C16/30 ,  H01L29/24 ,  C23C16/56 ,  C23C16/455 ,  H01L29/786

Abstract: A method for depositing a metal chalcogenide on a substrate by cyclical deposition is disclosed. The method may include, contacting the substrate with at least one metal containing vapor phase reactant and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a metal chalcogenide deposited by the methods of the disclosure are also provided.

公开(公告)号：US09828674B2

公开(公告)日：2017-11-28

申请号：US15096511

申请日：2016-04-12

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/302 ,  C23C16/455 ,  C23C16/30 ,  H01L45/00 ,  C23C16/18 ,  C23C16/44 ,  H01L21/02

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/305 ,  C23C16/4408 ,  C23C16/45555 ,  H01L21/02521 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02551 ,  H01L21/0262 ,  H01L45/06 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1616

Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

公开(公告)号：US20160265110A1

公开(公告)日：2016-09-15

申请号：US15073275

申请日：2016-03-17

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Jani Holopainen ,  Timo Hatanpaa ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/50

CPC classification number: C23C16/45527 ,  C23C16/08 ,  C23C16/18 ,  C23C16/30 ,  C23C16/401 ,  C23C16/50

Abstract: The present application relates to atomic layer deposition (ALD) processes for producing metal phosphates such as titanium phosphate, aluminum phosphate and lithium phosphate, as well as to ALD processes for depositing lithium silicates.

Abstract translation: 本申请涉及用于生产金属磷酸盐如磷酸钛，磷酸铝和磷酸锂的原子层沉积（ALD）方法，以及用于沉积硅酸锂的ALD工艺。

公开(公告)号：US09394609B2

公开(公告)日：2016-07-19

申请号：US14621218

申请日：2015-02-12

Applicant: ASM IP HOLDING B.V.

Inventor： Miia Mäntymäki ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/22 ,  C23C16/30 ,  C23C16/455

CPC classification number: C23C16/45553 ,  C23C16/30 ,  C23C16/45527

Abstract: Methods are provided for depositing thin films by vapor deposition using two different metal halide reactants. In some embodiments aluminum fluoride thin films are deposited by atomic layer deposition methods in which a substrate is alternately and sequentially contacted with a first metal halide reactant comprising aluminum, such as AlCl3, and a second metal halide reactant comprising fluorine, such as TiF4.

Abstract translation: 提供了通过使用两种不同的金属卤化物反应物的气相沉积来沉积薄膜的方法。 在一些实施例中，通过原子层沉积方法沉积氟化铝薄膜，其中基底与包含诸如AlCl 3的铝的第一金属卤化物反应物和包含氟的第二金属卤化物反应物如TiF 4交替并顺序地接触。

公开(公告)号：US12173402B2

公开(公告)日：2024-12-24

申请号：US16927509

申请日：2020-07-13

Applicant: ASM IP Holding B.V.

Inventor： Timo Hatanpää ,  Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/00 ,  C23C16/40 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532

Abstract: A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.

公开(公告)号：US11959171B2

公开(公告)日：2024-04-16

申请号：US17866706

申请日：2022-07-18

Applicant: ASM IP Holding B.V.

Inventor： Timo Hatanpää ,  Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/14 ,  C23C16/455

CPC classification number: C23C16/45553 ,  C23C16/14

Abstract: Methods of forming a transition metal containing film on a substrate by a cyclical deposition process are disclosed. The methods may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. The deposition methods may also include forming a transition metal containing film with an electrical resistivity of less than 50 μΩ-cm at a film thickness of less than 50 nanometers.

公开(公告)号：US11821084B2

公开(公告)日：2023-11-21

申请号：US17448586

申请日：2021-09-23

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/30 ,  C23C16/06 ,  C23C16/34

CPC classification number: C23C16/45534 ,  C23C16/06 ,  C23C16/08 ,  C23C16/305 ,  C23C16/34 ,  C23C16/45553

Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.

公开(公告)号：US11667595B2

公开(公告)日：2023-06-06

申请号：US17302276

申请日：2021-04-29

Applicant: ASM IP Holding B.V.

Inventor： Timo Hatanpää ,  Miika Mattinen ,  Mikko Ritala ,  Markku Leskelä

IPC: C07C49/92 ,  C07C45/77 ,  C23C16/30 ,  C23C16/455

CPC classification number: C07C49/92 ,  C07C45/77 ,  C23C16/305 ,  C23C16/45553 ,  C07C45/77 ,  C07C49/92

Abstract: Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS2, WNx, WO3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.