公开(公告)号：US20240201596A1

公开(公告)日：2024-06-20

申请号：US18528314

申请日：2023-12-04

Applicant: ASM IP Holding B.V.

Inventor： Kishan Ashokbhai Patel ,  Yoann Tomczak ,  Charles Dezelah ,  Ivan Zyulkov ,  David Kurt De Roest ,  Michael Givens ,  Daniele Piumi

IPC: G03F7/16 ,  G03F7/004

CPC classification number: G03F7/167 ,  G03F7/0045 ,  G03F7/165

Abstract: Methods and related systems for forming an EUV sensitive film on a substrate. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a first deposition pulse and a second deposition pulse. The first precursor pulse comprises exposing the substrate to a first precursor. The first precursor comprises a metal precursor. The second precursor pulse comprises exposing the substrate to a second precursor. The second precursor comprises a heterocyclic organic compound.

公开(公告)号：US20230268179A1

公开(公告)日：2023-08-24

申请号：US18166879

申请日：2023-02-09

Applicant: ASM IP Holding, B.V.

Inventor： Yoann Tomczak ,  Kishan Ashokbhai Patel

IPC: H01L21/033

CPC classification number: H01L21/0337

Abstract: Methods for patterning and forming structures, as well as related structures and systems are disclosed. The methods comprise forming a liner on sidewalls of a patterned resist. The patterned resist comprises a first metal, and the liner comprises a second metal.

公开(公告)号：US11735422B2

公开(公告)日：2023-08-22

申请号：US17065925

申请日：2020-10-08

Applicant: ASM IP Holding B.V.

Inventor： Ivan Zyulkov ,  David Kurt de Roest ,  Yoann Tomczak ,  Michael Eugene Givens ,  Perttu Sippola ,  Tatiana Ivanova ,  Zecheng Liu ,  Bokheon Kim ,  Daniele Piumi

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/02 ,  H01L21/3105

CPC classification number: H01L21/0337 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/0273 ,  H01L21/02172 ,  H01L21/02186 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/3105

Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

公开(公告)号：US20230054940A1

公开(公告)日：2023-02-23

申请号：US17815499

申请日：2022-07-27

Applicant: ASM IP Holding, B.V.

Inventor： Yoann Tomczak

IPC: H01L21/027

Abstract: Methods of forming patterned features and structures including the patterned features are disclosed. Exemplary methods include selectively forming a surface energy modified surface on a sidewall of structures and/or forming a surface-energy tunable layer on a surface of the substrate. The surface energy modified surface can be formed by depositing material and/or by treating the sidewall surface and/or by treating a surface adjacent the sidewall surface.

公开(公告)号：US20210013037A1

公开(公告)日：2021-01-14

申请号：US16922520

申请日：2020-07-07

Applicant: ASM IP Holding B.V.

Inventor： Yiting Sun ,  David de Roest ,  Daniele Piumi ,  Ivo Johannes Raaijmakers ,  BokHeon Kim ,  Timothee Blanquart ,  Yoann Tomczak

IPC: H01L21/033 ,  H01L21/311 ,  G03F7/20 ,  G03F7/38

Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition. Surface properties of the photoresist underlayer can be manipulated using a treatment process.