公开(公告)号：US10934619B2

公开(公告)日：2021-03-02

申请号：US15802154

申请日：2017-11-02

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon Kim ,  Yong Gyu Han ,  Dae Youn Kim ,  Hyun Soo Jang ,  Jeong Ho Lee

IPC: C23C16/455 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32 ,  H01L21/02 ,  H01L21/687

Abstract: A substrate processing apparatus having an improved film processing uniformity is provided. The substrate processing apparatus includes a partition configured to provide a gas supply channel and a gas supply unit connected to the gas supply channel. A gas flow channel communicating with the gas supply channel is formed in the gas supply unit. A first through-hole is formed to penetrate through at least a part of the partition. A second through-hole is formed to penetrate through at least a part of the gas supply unit. The first through-hole communicates with the gas flow channel via the second through-hole. The second through-hole is arranged between a center and an edge of the gas flow channel, and is arranged spaced apart from the edge.

公开(公告)号：US20190066978A1

公开(公告)日：2019-02-28

申请号：US16116708

申请日：2018-08-29

Applicant: ASM IP Holding B.V.

Inventor： Ki Chul Um ,  Hyun Soo Jang ,  Jeong Ho Lee ,  Yong Gyu Han

IPC: H01J37/32 ,  C23C16/509

Abstract: A plasma supply unit includes a first conductive portion, a second conductive portion having at least a part extending to overlap the first conductive portion, and a ground shield located between the first conductive portion and the second conductive portion, and a substrate processing apparatus including the plasma supply unit.

公开(公告)号：US20180166258A1

公开(公告)日：2018-06-14

申请号：US15835328

申请日：2017-12-07

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon Kim ,  Yong Gyu Han ,  Dae Youn Kim ,  Hyun Soo Jang ,  Jeong Ho Lee

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01J37/32495 ,  C23C16/402 ,  C23C16/4404 ,  C23C16/4412 ,  C23C16/45502 ,  C23C16/45542 ,  C23C16/45548 ,  C23C16/45565 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32477

Abstract: A substrate processing apparatus includes a partition comprising at least one through-hole, a conduit arranged in the partition through the through-hole, a gas supply unit connected to the conduit, and a low dielectric material provided between a side wall of the through-hole and the conduit.

公开(公告)号：US20180135173A1

公开(公告)日：2018-05-17

申请号：US15802154

申请日：2017-11-02

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon Kim ,  Yong Gyu Han ,  Dae Youn Kim ,  Hyun Soo Jang ,  Jeong Ho Lee

IPC: C23C16/455 ,  C23C16/52 ,  H01L21/02 ,  C23C16/509 ,  H01L21/687 ,  H01J37/32

CPC classification number: C23C16/45538 ,  C23C16/45542 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32532 ,  H01L21/0262 ,  H01L21/68764

Abstract: A substrate processing apparatus having an improved film processing uniformity is provided. The substrate processing apparatus includes a partition configured to provide a gas supply channel and a gas supply unit connected to the gas supply channel. A gas flow channel communicating with the gas supply channel is formed in the gas supply unit. A first through-hole is formed to penetrate through at least a part of the partition. A second through-hole is formed to penetrate through at least a part of the gas supply unit. The first through-hole communicates with the gas flow channel via the second through-hole. The second through-hole is arranged between a center and an edge of the gas flow channel, and is arranged spaced apart from the edge.

公开(公告)号：USD802546S1

公开(公告)日：2017-11-14

申请号：US29558834

申请日：2016-03-22

Applicant: ASM IP Holding B.V.

Designer： Hyun Soo Jang ,  Jeong Ho Lee ,  Young Hoon Kim

公开(公告)号：USD789888S1

公开(公告)日：2017-06-20

申请号：US29558825

申请日：2016-03-22

Applicant: ASM IP Holding B.V.

Designer： Hyun Soo Jang ,  Jeong Ho Lee ,  Young Hoon Kim ,  Jong Su Kim

公开(公告)号：US20220033968A1

公开(公告)日：2022-02-03

申请号：US17145333

申请日：2021-01-09

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon Kim ,  Yong Gyu Han ,  Dae Youn Kim ,  Hyun Soo Jang ,  Jeong Ho Lee

IPC: C23C16/455 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32 ,  H01L21/02 ,  H01L21/687

Abstract: A substrate processing apparatus having an improved film processing uniformity is provided. The substrate processing apparatus includes a partition configured to provide a gas supply channel and a gas supply unit connected to the gas supply channel. A gas flow channel communicating with the gas supply channel is formed in the gas supply unit. A first through-hole is formed to penetrate through at least a part of the partition. A second through-hole is formed to penetrate through at least a part of the gas supply unit. The first through-hole communicates with the gas flow channel via the second through-hole. The second through-hole is arranged between a center and an edge of the gas flow channel, and is arranged spaced apart from the edge.

公开(公告)号：US10822695B2

公开(公告)日：2020-11-03

申请号：US16834283

申请日：2020-03-30

Applicant: ASM IP Holding B.V.

Inventor： Hyun Soo Jang ,  Dae Youn Kim ,  Jeong Ho Lee ,  Young Hoon Kim ,  Seung Seob Lee ,  Woo Chan Kim

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H01L21/67

Abstract: A reaction chamber includes a reactor wall, a susceptor contacting the reactor wall to define a reaction space and a gas flow control device and a showerhead member stacked between the reactor wall and the susceptor. The showerhead member includes a gas channel and a showerhead. Penetration holes are formed through a protruding lateral portion of the gas flow control device, and the reactor wall and a lateral portion of the showerhead member are spaced apart from each other to form a gas discharge path. Gas remaining in the gas discharge path is discharged through the penetration holes and a gas outlet formed in an upper portion of the reactor wall. Because of the reaction space and the gas discharge path, unnecessary regions are removed to rapidly change gases from one to another, and thus atomic layer deposition may be performed with high efficiency and productivity.

公开(公告)号：US10662525B2

公开(公告)日：2020-05-26

申请号：US15202468

申请日：2016-07-05

Applicant: ASM IP Holding B.V.

Inventor： Hyun Soo Jang ,  Dae Youn Kim ,  Jeong Ho Lee ,  Young Hoon Kim ,  Seung Seob Lee ,  Woo Chan Kim

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/509 ,  H01L21/67

Abstract: A reaction chamber includes a reactor wall, a susceptor contacting the reactor wall to define a reaction space and a gas flow control device and a showerhead member stacked between the reactor wall and the susceptor. The showerhead member includes a gas channel and a showerhead. Penetration holes are formed through a protruding lateral portion of the gas flow control device, and the reactor wall and a lateral portion of the showerhead member are spaced apart from each other to form a gas discharge path. Gas remaining in the gas discharge path is discharged through the penetration holes and a gas outlet formed in an upper portion of the reactor wall. The reaction chamber provides a reaction space and the gas discharge path from which unnecessary regions are removed to rapidly change gases from one to another, and thus atomic layer deposition may be performed with high efficiency and productivity.

公开(公告)号：US20180171477A1

公开(公告)日：2018-06-21

申请号：US15835352

申请日：2017-12-07

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon Kim ,  Yong Gyu Han ,  Dae Youn Kim ,  Hyun Soo Jang ,  Jeong Ho Lee

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC classification number: C23C16/45527 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/458 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32834

Abstract: A substrate processing apparatus having improved uniformity and speed of reaction is provided. A substrate processing apparatus includes a body portion comprising a discharge path, a gas supply unit connected to the body portion, a first partition extending from the body portion, a second partition extending from the body portion and arranged between the gas supply unit and the first partition, and a substrate support unit configured to have surface-sealing with the first partition, wherein a first region between the first partition and the second partition and a second region between the gas supply unit and the second partition are connected to the discharge path.