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公开(公告)号:US20180081280A1
公开(公告)日:2018-03-22
申请号:US15270072
申请日:2016-09-20
Applicant: ASML Netherlands B.V.
Inventor: Alexander Anthony Schafgans , Igor Vladimirovich Fomenkov , Yezheng Tao , Rostislav Rokitski , Robert Jay Rafac , Daniel John William Brown , Cory Alan Stinson
Abstract: An optical source for an extreme ultraviolet (EUV) photolithography tool includes a light-generation system including a light-generation module; an optical amplifier including a gain medium associated with a gain band, the gain medium configured to amplify light having a wavelength in the gain band; and a wavelength-based optical filter system on a beam path between the light-generation module and the optical amplifier, the wavelength-based optical filter system including at least one optical element configured to allow light having a wavelength in a first set of wavelengths to propagate on the beam path and to remove light having a wavelength in a second set of wavelengths from the beam path, the first set of wavelengths and the second set of wavelengths including different wavelengths in the gain band of the optical amplifier.
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公开(公告)号:US09462668B2
公开(公告)日:2016-10-04
申请号:US14874164
申请日:2015-10-02
Applicant: ASML Netherlands B.V.
Inventor: Yezheng Tao , Robert Jay Rafac , Igor Vladimirovich Fomenkov , Daniel John William Brown , Daniel James Golich
Abstract: Techniques for forming a target and for producing extreme ultraviolet light include releasing an initial target material toward a target location, the target material including a material that emits extreme ultraviolet (EUV) light when converted to plasma; directing a first amplified light beam toward the initial target material, the first amplified light beam having an energy sufficient to form a collection of pieces of target material from the initial target material, each of the pieces being smaller than the initial target material and being spatially distributed throughout a hemisphere shaped volume; and directing a second amplified light beam toward the collection of pieces to convert the pieces of target material to plasma that emits EUV light.
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公开(公告)号:US20240160109A1
公开(公告)日:2024-05-16
申请号:US18508987
申请日:2023-11-14
Applicant: ASML Netherlands B.V.
Inventor: Yue Ma , Antonius Theodorus Wilhelmus Kempen , Klaus Martin Hummler , Johannes Hubertus Josephina Moors , Jeroen Hubert Rommers , Hubertus Johannes Van De Wiel , Andrew David Laforge , Fernando Brizuela , Rob Carlo Wieggers , Umesh Prasad Gomes , Elena Nedanovska , Celal Korkmaz , Alexander Downn Kim , Rui Miguel Duarte Rodrigues Nunes , Hendrikus Alphonsus Ludovicus Van Dijck , William Peter Van Drent , Peter Gerardus Jonkers , Qiushi Zhu , Parham Yaghoobi , Jan Steven Christiaan Westerlaken , Martinus Hendrikus Antonius Leenders , Alexander Igorevich Ershov , Igor Vladimirovich Fomenkov , Fei Liu , Johannes Henricus Wilhelmus Jacobs , Alexey Sergeevich Kuznetsov
IPC: G03F7/00
CPC classification number: G03F7/70166 , G03F7/70033 , G03F7/70883 , G03F7/70916 , G03F7/70925
Abstract: Degradation of the reflectivity of one or more reflective optical elements in a system for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.
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公开(公告)号:US20220260756A1
公开(公告)日:2022-08-18
申请号:US17625426
申请日:2020-06-26
Applicant: ASML Netherlands B.V.
Inventor: Yue Ma , Marcus Adrianus Van De Kerkhof , Qiushi Zhu , Klaus Martin Hummler , Peter Matthew Mayer , Kay Hoffmann , Andrew David LaForge , Igor Vladimirovich Fomenkov , Daniel John William Brown
Abstract: Provided is an optical element for a lithographic apparatus. The optical element includes a capping layer that includes oxygen vacancies therein. The oxygen vacancies prevent attack of the capping layer by preventing hydrogen and other species from penetrating the capping layer and underlying layers. The capping layer provides a low hydrogen recombination rate enabling hydrogen to clean the surface of the optical element. The capping layer may include an alloyed metal, a mixed metal oxide or a doped metal oxide and it may be a ruthenium capping layer that includes one or more dopants therein.
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公开(公告)号:US10663866B2
公开(公告)日:2020-05-26
申请号:US15270072
申请日:2016-09-20
Applicant: ASML Netherlands B.V.
Inventor: Alexander Anthony Schafgans , Igor Vladimirovich Fomenkov , Yezheng Tao , Rostislav Rokitski , Robert Jay Rafac , Daniel John William Brown , Cory Alan Stinson
Abstract: An optical source for an extreme ultraviolet (EUV) photolithography tool includes a light-generation system including a light-generation module; an optical amplifier including a gain medium associated with a gain band, the gain medium configured to amplify light having a wavelength in the gain band; and a wavelength-based optical filter system on a beam path between the light-generation module and the optical amplifier, the wavelength-based optical filter system including at least one optical element configured to allow light having a wavelength in a first set of wavelengths to propagate on the beam path and to remove light having a wavelength in a second set of wavelengths from the beam path, the first set of wavelengths and the second set of wavelengths including different wavelengths in the gain band of the optical amplifier.
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公开(公告)号:US20240419083A1
公开(公告)日:2024-12-19
申请号:US18818079
申请日:2024-08-28
Applicant: ASML Netherlands B.V.
Inventor: Robert Jay Rafac , Igor Vladimirovich Fomenkov
Abstract: Disclosed is a system and method for generating EUV radiation in which a laser is used in a multistage process to illuminate without altering a target material and then irradiate the target material to alter a target material with the illumination stage being used to determine the timing for firing during the irradiation stage or stages.
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公开(公告)号:US12171053B2
公开(公告)日:2024-12-17
申请号:US17583799
申请日:2022-01-25
Applicant: ASML Netherlands B.V.
Inventor: Michael Anthony Purvis , Klaus Martin Hummler , Chengyuan Ding , Robert Jay Rafac , Igor Vladimirovich Fomenkov
Abstract: An amplified optical beam is provided to a region that receives a target including target material, an interaction between the amplified optical beam and the target converting at least some of the target material from a first form to a second form to form a light-emitting plasma; first data comprising information related to the amplified optical beam is accessed; second data comprising information related to the light-emitting plasma is accessed; and an amount of the target material converted from the first form to the second form is determined. The determination is based on at least the first data and the second data, and the second form of the target material is less dense than the first form of the target material.
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公开(公告)号:US11846887B2
公开(公告)日:2023-12-19
申请号:US17715641
申请日:2022-04-07
Applicant: ASML Netherlands B.V.
Inventor: Yue Ma , Antonius Theodorus Wilhelmus Kempen , Klaus Martin Hummler , Johannes Hubertus Josephina Moors , Jeroen Hubert Rommers , Hubertus Johannes Van De Wiel , Andrew David Laforge , Fernando Brizuela , Rob Carlo Wieggers , Umesh Prasad Gomes , Elena Nedanovska , Celal Korkmaz , Alexander Downn Kim , Rui Miguel Duarte Rodrigues Nunes , Hendrikus Alphonsus Ludovicus Van Dijck , William Peter Van Drent , Peter Gerardus Jonkers , Qiushi Zhu , Parham Yaghoobi , Jan Steven Christiaan Westerlaken , Martinus Hendrikus Antonius Leenders , Alexander Igorevich Ershov , Igor Vladimirovich Fomenkov , Fei Liu , Johannes Henricus Wilhelmus Jacobs , Alexey Sergeevich Kuznetsov
IPC: G03F7/00
CPC classification number: G03F7/70166 , G03F7/70033 , G03F7/70883 , G03F7/70916 , G03F7/70925
Abstract: Degradation of the reflectivity of one or more reflective optical elements in a system for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.
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公开(公告)号:US10955749B2
公开(公告)日:2021-03-23
申请号:US16469689
申请日:2018-01-05
Applicant: ASML NETHERLANDS B.V.
Inventor: Dzmitry Labetski , Christianus Wilhelmus Johannes Berendsen , Rui Miguel Duarte Rodriges Nunes , Alexander Igorevich Ershov , Kornelis Frits Feenstra , Igor Vladimirovich Fomenkov , Klaus Martin Hummler , Arun Johnkadaksham , Matthias Kraushaar , Andrew David Laforge , Marc Guy Langlois , Maksim Loginov , Yue Ma , Seyedmohammad Mojab , Kerim Nadir , Alexander Shatalov , John Tom Stewart, IV , Henricus Gerardus Tegenbosch , Chunguang Xia
Abstract: An extreme ultraviolet radiation (EUV) source, including: a vessel having an inner vessel wall and an intermediate focus (IF) region; an EUV collector disposed inside the vessel, the EUV collector including a reflective surface configured to reflect EUV radiation toward the intermediate focus region, the reflective surface configured to directionally face the IF region of the vessel; a showerhead disposed along at least a portion of the inner vessel wall, the showerhead including a plurality of nozzles configured to introduce gas into the vessel; and one or more exhausts configured to remove gas introduced into the vessel, the one or more exhausts being oriented along at least a portion of the inner vessel wall so that the gas is caused to flow away from the EUV collector.
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公开(公告)号:US20200344868A1
公开(公告)日:2020-10-29
申请号:US16756185
申请日:2018-10-19
Applicant: ASML Netherlands B.V.
Inventor: Michael Anthony Purvis , Klaus Martin Hummler , Chengyuan Ding , Robert Jay Rafac , Igor Vladimirovich Fomenkov
Abstract: An amplified optical beam is provided to a region that receives a target including target material, an interaction between the amplified optical beam and the target converting at least some of the target material from a first form to a second form to form a light-emitting plasma; first data comprising information related to the amplified optical beam is accessed; second data comprising information related to the light-emitting plasma is accessed; and an amount of the target material converted from the first form to the second form is determined. The determination is based on at least the first data and the second data, and the second form of the target material is less dense than the first form of the target material.
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