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11.发明申请公开(公告)号：US20230062585A1
公开(公告)日：2023-03-02
申请号：US17856213
申请日：2022-07-01
Applicant: ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus TINNEMANS , Arie Jeffrey DEN BOEF , Armand Eugene Albert KOOLEN , Nitesh PANDEY , Vasco Tomas TENNER , Willem Marie Julia Marcel COENE , Patrick WARNAAR
Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.
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公开(公告)号：US20130100427A1
公开(公告)日：2013-04-25
申请号：US13628697
申请日：2012-09-27
Applicant: ASML Netherlands B.V.
Inventor： Armand Eugene Albert KOOLEN , Henricus Petrus Maria Pellemans , Maurits Van Der Schaar , Peter Clement Paul Vanoppen , Michael Kubis
CPC classification number: G03F1/42 , G01B9/04 , G01N21/47 , G03F7/70616 , G03F7/70633 , G03F9/70 , G03F9/7069 , G03F9/7088
Abstract: An approach is used to estimate and correct the overlay variation as function of offset for each measurement. A target formed on a substrate includes periodic gratings. The substrate is illuminated with a circular spot on the substrate with a size larger than each grating. Radiation scattered by each grating is detected in a dark-field scatterometer to obtain measurement signals. The measurement signals are used to calculate overlay. The dependence (slope) of the overlay as a function of position in the illumination spot is determined. An estimated value of the overlay at a nominal position such as the illumination spot's center can be calculated, correcting for variation in the overlay as a function of the target's position in the illumination spot. This compensates for the effect of the position error in the wafer stage movement, and the resulting non-centered position of the target in the illumination spot.
Abstract translation: 一种方法用于估计和校正覆盖变化作为每个测量的偏移函数。 形成在衬底上的靶包括周期性光栅。 在衬底上用圆形点照射衬底，其尺寸大于每个光栅。 在暗场散射仪中检测由每个光栅散射的辐射，以获得测量信号。 测量信号用于计算叠加。 确定覆盖层与照明点中位置的函数关系（斜率）。 可以计算在诸如照明点中心的标称位置处的覆盖物的估计值，以根据目标在照明点中的位置的函数来校正覆盖物的变化。 这补偿了晶片台移动中的位置误差的影响，以及目标在照明点中产生的非居中位置。
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公开(公告)号：US20240036484A1
公开(公告)日：2024-02-01
申请号：US18265606
申请日：2021-12-02
Applicant: ASML Netherlands B.V.
Inventor： Timothy Dugan DAVIS , Simon Gijsbert Josephus MATHIJSSEN , Kaustuve BHATTACHARYYA , Sebastianus Adrianus GOORDEN , Armand Eugene Albert KOOLEN , Sera JEON , Shuo-Chun LIN
CPC classification number: G03F9/7019 , G03F9/7092 , G03F7/70633 , G03F7/70641
Abstract: Disclosed is a method of metrology. The method comprises measuring at least one surrounding observable parameter relating to a surrounding signal contribution to a metrology signal which comprises a contribution to said metrology signal which is not attributable to at least one target being measured and determining a correction from said surrounding signal observable parameter. The correction is used to correct first measurement data relating to measurement of one or more targets using measurement radiation forming a measurement spot on one or more of said one or more targets which is larger than one of said targets.
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Patent Agency Ranking
14.发明公开公开(公告)号：US20240036480A1
公开(公告)日：2024-02-01
申请号：US18258521
申请日：2021-12-09
Applicant: ASML Netherlands B.V.
Inventor： Armand Eugene Albert KOOLEN , Simon Gijsbert Josephus MATHIJSSEN , Hui Quan LIM , Amanda Elizabeth ANDERSON
CPC classification number: G03F7/70683 , G03F7/70633 , G03F9/7088 , G03F9/7076
Abstract: Disclosed is a method of measuring a target on a substrate comprising: illuminating a target with measurement radiation comprising at least a first wavelength, collecting the resultant scattered radiation within a collection numerical aperture; and determining a parameter of interest from said scattered radiation. The target comprises a mediator periodic structure and at least a first target periodic structure each in a respective different layer on the substrate, wherein a pitch of at least the mediator periodic structure is below a single diffraction limit defined by the collection numerical aperture and a wavelength of said measurement radiation, such that said scattered radiation comprises double diffracted radiation, said double diffracted radiation comprising radiation having undergone two sequential same-order diffractions of opposite sign.
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15.发明公开公开(公告)号：US20230176491A1
公开(公告)日：2023-06-08
申请号：US17923913
申请日：2021-04-21
Applicant: ASML Netherlands B.V.
Inventor： Olger Victor ZWIER , Maurits VAN DER SCHAAR , Hilko Dirk BOS , Hans VAN DER LAAN , S.M. Masudur Rahman AL ARIF , Henricus Wilhelmus Maria Van Buel , Armand Eugene Albert KOOLEN , Victor CALADO , Kaustuve BHATTACHARYYA , Jin LIAN , Sebastianus Adrianus GOORDEN , Hui Quan LIM
IPC: G03F7/20
CPC classification number: G03F7/70641 , G03F7/70558 , G03F7/70633 , G03F7/70625
Abstract: Disclosed is a substrate and associated patterning device. The substrate comprises at least one target arrangement suitable for metrology of a lithographic process, the target arrangement comprising at least one pair of similar target regions which are arranged such that the target arrangement is, or at least the target regions for measurement in a single direction together are, centrosymmetric. A metrology method is also disclosed for measuring the substrate. A metrology method is also disclosed comprising which comprises measuring such a target arrangement and determining a value for a parameter of interest from the scattered radiation, while correcting for distortion of the metrology apparatus used.
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16.发明申请公开(公告)号：US20210003924A1
公开(公告)日：2021-01-07
申请号：US17022910
申请日：2020-09-16
Applicant: ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus TINNEMANS , Arie Jeffrey DEN BOEF , Armand Eugene Albert KOOLEN , Nitesh PANDEY , Vasco Tomas TENNER , Willem Marie Julia Marcel COENE , Patrick WARNAAR
Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.
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公开(公告)号：US20180173113A1
公开(公告)日：2018-06-21
申请号：US15842958
申请日：2017-12-15
Applicant: ASML Netherlands B.V.
Inventor： Jolanda Theodora Josephina SCHMETZ-SCHAGEN , Hugo Augustinus Joseph CRAMER , Armand Eugene Albert KOOLEN , Bastiaan Onne FAGGINGER AUER
CPC classification number: G03F7/70641 , G01B11/028 , G01M11/0264 , G01N21/956 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F9/7026
Abstract: A method for monitoring a characteristic of illumination from a metrology apparatus, the method comprising: using the metrology apparatus to acquire a pupil image at different focus settings of the metrology apparatus; and calculating an asymmetry value for each acquired pupil image; wherein each pupil image is acquired on at least one edge of a target of a substrate.
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公开(公告)号：US20170176328A1
公开(公告)日：2017-06-22
申请号：US15378962
申请日：2016-12-14
Applicant: ASML Netherlands B.V.
Inventor： Martin Jacobus Johan JAK , Armand Eugene Albert KOOLEN , Gerbrand VAN DER ZOUW , Dirk Karel Margaretha BRODDIN
Abstract: An inspection apparatus includes an optical system, which has a radiation beam delivery system for delivering radiation to a target, and a radiation beam collection system for collecting radiation after scattering from the target. Both the delivery system and the collection system comprise optical components that control the characteristics of the radiation and the collected radiation. By controlling the characteristics of one or both of the radiation and collected radiation, the depth of focus of the optical system may be increased.
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